摘要:
An endless sliding guide apparatus including a track rail, a sliding table having an endless track comprising a load rolling path, a no-load rolling path and a change direction path and rolling bodies wherein at least one of the no-load rolling path, the inner peripheral portion of the change direction path and a rolling body retaining section of the load rolling path is formed by synthetic resin rolling body guide members formed by insert molding using a bearing race as a core. The rolling body guide members are molded by a synthetic resin composition satisfying the relational expression of (a.times.b).div.c.gtoreq.700 Mpa with respect to the tensile strength a (MPa), tensile elongation b (%) and shrinkage c (%). The endless sliding guide apparatus of the present invention has the advantages that since the endless track of the sliding table is accurately formed, the rolling of the rolling bodies along the endless track is quite smooth, the noise level is minimized and not only the manufacture of the sliding table can be automated but also the problem of "corner cracks" in the synthetic resin rolling body guide members can be eliminated thereby extending the working life of the apparatus.
摘要:
This invention relates to a dust preventing structure of a guide unit comprising a track shaft and a sliding member engaging the track shaft via a plurality of rolling bodies such that it is capable of reciprocating in a length direction thereof. Elastic members in firm contact with the track shaft are overlaid in the length direction of the track shaft. A lubricant pocket forming member having a concave groove portion for forming a lubricant pocket constituted of the elastic members and filled with lubricant by a help of the surface of the track shaft as well is provided so as to achieve a smooth reciprocating motion of the sliding member with respect to the track shaft with less sliding friction. Particularly, under even a severe use condition in which use of coolant is required or dust, dirt, wooden pieces, cutting powder or the like falls on the guide unit, a smooth reciprocating motion of the sliding member with respect to the track shaft can be maintained in a long period.
摘要:
A lubricant supplying unit preferable for a linear motion apparatus such as a linear guide unit and a ball screw unit, always capable of coating all rolling body rolling grooves formed on a track shaft with an equal amount of lubricant regardless of a difference in the mounting posture of the track shaft with respect to a fixing unit, is provided. A lubricant supplying system for achieving such an object comprises a casing fixed to the slide member, a plurality of coating pieces which are protruded from plural positions of the casing so that they are in contact with the track shaft for coating the track shaft with lubricant and a lubricant accommodating chamber provided in the casing for supplying lubricant to the coating piece, wherein the plurality of the coating pieces are divided to groups consisting of one or two or more adjacent coating pieces and the lubricant accommodating chambers is formed for each of the groups.
摘要:
The present invention relates to a linear movement device, for example, a linear guide device, a ball screw, a ball spline or the like in which a track shaft and a slide member is engaged movably relative to each other via a rolling element of a ball, a roller or the like, in details, to an improvement of a linear movement device having a lubricant supplying member coating a lubricant on a face of the track shaft. The linear movement device is constituted by a track shaft where a rolling face of a rolling element is formed, a slide member engaged with the track shaft via the rolling element and moved relative to the track shaft and a lubricant supplying member mounted to the slide member and coating a lubricant on a surface of the track shaft in accordance with the relative movement and further, the lubricant supplying member includes a lubricant coater brought into contact with the track shaft for coating the lubricant on the track shaft, a lubricant absorber installed contiguous to the lubricant coater for supplying the lubricant to the lubricant coater while absorbing the lubricant and holding the lubricant and oil amount controlling means for controlling an amount of the lubricant supplied from the lubricant absorber to the lubricant coater.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a controller. The controller is configured to perform a verify operation using a first verification voltage and a second verification voltage (first verification voltage
摘要:
A non-volatile semiconductor memory device comprises a memory cell array including a plurality of memory cells arrayed capable of storing information of N bits (N≧2) in accordance with variations in threshold voltage. A parity data adder circuit adds parity data for error correction to every certain data bits to be stored in the memory cell array. A frame converter circuit uniformly divides frame data containing the data bits and the parity data into N pieces of subframe data. A programming circuit stores the subframe data divided into N pieces in respective N sub-pages formed corresponding to the information of N bits.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes memory cells storing data in a nonvolatile manner, word lines connected to the memory cells and including a first word line and a second word line which is n-th (n is an integer of 1 or more) from the first word line, and a control circuit configured to control a voltage of a word line to write data to a memory cell so that data are written in order from the first word line to the second word line. In a write sequence of the first word line, the control circuit applies a writing voltage to the second word line before writing a memory cell connected to the first word line.
摘要:
A memory cell array has a plurality of memory cells arrayed in row and column directions. A plurality of sense amplifier units includes a plurality of sense amplifiers detecting write completion of each of the memory cells selected for each row. A plurality of detection units is arranged correspondingly to the sense amplifier units, and forms a transfer path for transferring potential in accordance with a detection output signal of each sense amplifier unit. The detection units detect a sense amplifier unit corresponding to a portion where the transfer path breaks off, as a sense amplifier unit including write incompletion bit.
摘要:
A semiconductor memory device comprises a first exclusive-OR circuit which compares mth N-bit first data with (m+1)th N-bit second data, a majority circuit which generates flag data to invert the second data if a comparison result of the first exclusive-OR circuit indicates that the number of mismatch bits between the first data and the second data is not less than N/2, and generates flag data to noninvert the second data if the number of mismatch bits between the first data and the second data is less than N/2, a second exclusive-OR circuit which inverts or noninverts the second data based on the flag data, a shift register which stores the flag data generated by the majority circuit, and a pad to serially output both the inverted or noninverted second data and the flag data.
摘要:
A nonvolatile semiconductor storage apparatus comprises a memory cell array having a plurality of memory cells which are connected to word lines and to bit lines and in each of which different information of x (x is an integer equal to or larger than 3) bits is stored in association with 2x threshold voltages, the x-bit information being able to be read from each memory cell by applying a read voltage to the corresponding word line; a row decoder connected to the word lines to supply voltages to the word lines to operate the memory cells; and a sense amplifier device connected to the bit lines to read data stored in the memory cells and to hold the read data and data written to the memory cells, wherein the x-bit information corresponding to a certain threshold voltage differs from that corresponding to the adjacent threshold voltage by only 1 bit, 2x−1 of the read voltages are each set for a pair of adjacent threshold voltages, and applying any of the read voltages to the word line determines the x-bit information stored in the memory cell, and at least two read voltages are set in order to determine information for each of the x bits.