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25 条记录 (耗时 0.034 秒)

    Indole derivatives as somatostatin agonists or antagonists
    1.
    发明申请
    Indole derivatives as somatostatin agonists or antagonists 审中-公开
    吲哚衍生物作为生长抑素激动剂或拮抗剂

    公开(公告)号：US20060223826A1

    公开(公告)日：2006-10-05

    申请号：US10534725

    申请日：2003-11-18

    申请人： Hidenori Abe ,  Shinichiro Matsunaga ,  Shiro Takekawa ,  Masanori Watanabe

    发明人： Hidenori Abe ,  Shinichiro Matsunaga ,  Shiro Takekawa ,  Masanori Watanabe

    IPC分类号： A61K31/496 ,  A61K31/454 ,  C07D403/02

    CPC分类号： C07D401/12 ,  C07D209/20 ,  C07D209/42 ,  C07D401/14 ,  C07D403/12 ,  C07D405/12 ,  C07D405/14 ,  C07D417/12 ,  C07D417/14 ,  C07D495/04

    摘要： The present invention provide a compound of the formula (I) wherein ring A represents an aromatic ring optionally having substituents; B, Y and Ya are the same or different and each represents a bond, etc.; R1 and R2 are the same or different and each represents a hydrogen atom, etc.; R3 represents a hydrogen atom, etc.; R4 and R5 are the same or different and each represents a hydrogen, etc.; R6 represents an indolyl group optionally having substituents; and Z and Za are the same or different and each represents a hydrogen atom, etc.; or a salt thereof or a prodrug thereof, having a somatostatin receptor binding inhibition activity and is useful for preventing and/or treating diseases associated with somatostatin.

    摘要翻译： 本发明提供式（I）的化合物，其中环A表示任选具有取代基的芳环; B，Y和Ya是相同或不同的，每个代表一个债券等; R 1和R 2相同或不同，各自表示氢原子等; R 3表示氢原子等; R 4和R 5相同或不同，各自表示氢等; R 6表示任选具有取代基的吲哚基; Z和Za相同或不同，各自表示氢原子等; 或其盐或其前药，具有生长抑素受体结合抑制活性，并且可用于预防和/或治疗与生长抑素相关的疾病。

    Amine derivative
    2.
    发明申请
    Amine derivative 审中-公开
    胺衍生物

    公开(公告)号：US20050245571A1

    公开(公告)日：2005-11-03

    申请号：US10492420

    申请日：2002-10-17

    申请人： Hidenori Abe ,  Shizuo Kasai ,  Shiro Takekawa ,  Masanori Watanabe

    发明人： Hidenori Abe ,  Shizuo Kasai ,  Shiro Takekawa ,  Masanori Watanabe

    IPC分类号： A61K31/4709 ,  A61K31/4725 ,  A61K31/496 ,  A61K31/5377 ,  A61K31/541 ,  A61K31/551 ,  A61P3/10 ,  A61P43/00 ,  C07D401/06 ,  C07D401/14 ,  C07D43/14

    CPC分类号： A61K31/496 ,  A61K31/4709 ,  A61K31/4725 ,  A61K31/5377 ,  A61K31/541 ,  A61K31/551 ,  C07D401/06 ,  C07D401/14

    摘要： The present invention provide a compound of the formula: wherein X and X′ are the same or different and each represents a hydrogen atom, etc.; R1 and R2 are the same or different and each represents a hydrogen atom, etc.; R3 represents a hydrocarbon group optionally having substituents, etc.; R4 represents a hydrogen atom, etc.; Y and Ya are the same or different and each represents a bond or a spacer having a main chain of 1 to 8 atoms; Z and Za are the same or different and each represents a hydrogen atom, etc.; or a salt thereof or a prodrug thereof, having a somatostatin receptor binding inhibitory activity and is useful for preventing and/or treating diseases associated with somatostatin.

    摘要翻译： 本发明提供下式的化合物：其中X和X'相同或不同，各自表示氢原子等; R 1和R 2相同或不同，各自表示氢原子等; R 3表示任选具有取代基的烃基等; R 4表示氢原子等; Y和Ya相同或不同，各自表示键或具有1至8个原子的主链的间隔基; Z和Za相同或不同，各自表示氢原子等; 或其盐或其前药，具有生长抑素受体结合抑制活性，并且可用于预防和/或治疗与生长抑素相关的疾病。

    Surface acoustic wave filter with optimally sized gaps between transducers
    5.
    发明授权
    Surface acoustic wave filter with optimally sized gaps between transducers 失效
    表面声波滤波器，在传感器之间具有最佳尺寸的间隙

    公开(公告)号：US5877661A

    公开(公告)日：1999-03-02

    申请号：US737372

    申请日：1997-06-17

    申请人： Masashi Ohmura ,  Hiroshi Honmo ,  Hidenori Abe

    发明人： Masashi Ohmura ,  Hiroshi Honmo ,  Hidenori Abe

    IPC分类号： H03H9/00 ,  H03H9/64

    CPC分类号： H03H9/0028 ,  H03H9/6433 ,  H03H9/6469

    摘要： A surface acoustic wave filter comprises a first electrode structure array which is formed on the piezoelectric substrate, and includes an input/output IDT, two receipt IDTs formed outside the input/output IDT and two reflectors formed outside the two receipt IDTs, and a second electrode structure array which is formed on the piezoelectric substrate and includes an input/output IDT, two receipt IDTs formed outside the input/output IDT and two reflectors formed outside the two receipt IDTs, which are concatenated with each other. In a case that the surface acoustic wave filter is represented by a symmetrical lattice-type circuit which is expressed by a serial arm impedance and a parallel arm impedance and is electrically equivalent to the same, at least two resonances of the serial arm impedance and at least three resonances of the parallel arm impedance are used to form a passband. The surface acoustic wave filter can have wide bands and low spurious signal.

    摘要翻译： PCT No.PCT / JP96 / 00691 Sec。 371日期：1997年6月17日 102（e）日期1997年6月17日PCT 1996年3月15日PCT公布。 公开号WO96 / 28886 日期1996年9月19日一种表面声波滤波器，包括形成在压电基板上的第一电极结构阵列，并且包括输入/​​输出IDT，形成在输入/输出IDT外部的两个接收IDT，以及形成在两个接收之外的两个反射器 IDT，以及形成在压电基板上并包括输入/​​输出IDT，形成在输入/输出IDT外部的两个接收IDT和形成在两个接收IDT之外的两个反射器的第二电极结构阵列，它们彼此并联。 在表面声波滤波器由以串联臂阻抗和并联臂阻抗表示的并且与之相当的对称晶格型电路表示的情况下，串联臂阻抗和串联臂阻抗的至少两个谐振 使用并联臂阻抗的至少三个谐振来形成通带。 表面声波滤波器可以具有宽带和低杂散信号。

    Piezoelectric bulk acoustic wave device
    9.
    发明授权
    Piezoelectric bulk acoustic wave device 有权
    压电体波器件

    公开(公告)号：US06259187B1

    公开(公告)日：2001-07-10

    申请号：US09472806

    申请日：1999-12-28

    申请人： Hidenori Abe ,  Hisatoshi Saitou

    发明人： Hidenori Abe ,  Hisatoshi Saitou

    IPC分类号： H03H925

    CPC分类号： H03H9/174 ,  H03H9/177

    摘要： An object of the invention is to provide a piezoelectric bulk acoustic wave device having a high effective electromechanical coupling constant and allowing a fractional bandwidth to be broadened when applied to a filter and a normalized frequency variable width to be broadened when applied to an oscillator. Another object of the invention is to provide a miniature piezoelectric bulk acoustic wave device capable of operating at a high frequency of several hundreds of megahertz while maintaining a high electromechanical coupling constant. The piezoelectric bulk acoustic wave device includes a piezoelectric substrate constructed of a single crystal or oriented crystal body of potassium niobate and having a pair of major surfaces, and at least one pair of opposed electrodes formed on the major surfaces of the piezoelectric substrate, respectively, wherein the device utilizes thickness vibration propagating along the major surfaces.

    摘要翻译： 本发明的目的是提供一种具有高有效机电耦合常数的压电体声波器件，并且当施加到滤波器时允许分数带宽变宽，并且当应用于振荡器时，可以使归一化的频率可变宽度变宽。 本发明的另一个目的是提供一种能够在保持高机电耦合常数的同时以几百兆赫兹的高频率工作的微型压电体声波器件。 压电体振子装置包括由铌酸钾的单晶或取向晶体构成并具有一对主表面的压电基片和分别形成在压电基板的主表面上的至少一对相对电极， 其中该装置利用沿主表面传播的厚度振动。

    Surface acoustic wave device
    10.
    发明授权
    Surface acoustic wave device 失效
    表面声波装置

    公开(公告)号：US5850167A

    公开(公告)日：1998-12-15

    申请号：US750501

    申请日：1997-03-20

    申请人： Hidenori Abe

    发明人： Hidenori Abe

    IPC分类号： H03H9/64 ,  H03M9/64

    CPC分类号： H03H9/6459

    摘要： A first electrode structure row formed on a piezoelectric substrate, and including N1 pairs of an input/output IDT, N2 pairs of a connection IDT, and reflectors is cascade-connected to a second electrode structure row formed on the piezoelectric substrate, and including N1 pairs of an input/output IDT, N2 pairs of a connection IDT, and reflectors, the connection IDT of the first electrode structure row, and the connection IDT of the second electrode structure row being arranged electrically symmetric with respect to the cascade-connected plane. The pair number N1 of the input/output IDT is different from the pair number N2 of the connection IDT. When a normalized electrode film thickness of the input/output IDT and the connection IDT is represented by h/L, the pair number N1 of the input/output IDT satisfies the following formula 43-11(h/L).ltoreq.N1.ltoreq.61-11(h/L). The surface acoustic wave device can realize good filter characteristics of low insertion losses, small amplitude ripples and group delay time ripples, relatively large specific bandwidths, good shape factors, large attenuation, and is useful as filters for use in mobile communications, etc., especially as intermediate frequency filters for use in digital communications.

    摘要翻译： PCT No.PCT / JP96 / 01002 Sec。 371日期1997年3月20日 102（e）1997年3月20日PCT PCT 1996年4月11日PCT公布。 出版物WO96 / 32777 日期：1996年10月17日在压电基板上形成的第一电极结构列，包括N1对输入/输出IDT，N2对连接IDT和反射器，级联连接到形成在压电 衬底，并且包括N1对输入/输出IDT，N2对连接IDT和反射器，第一电极结构行的连接IDT和第二电极结构行的连接IDT相对于 级联连接平面。 输入/输出IDT的对号N1不同于连接IDT的对号N2。 当输入/输出IDT和连接IDT的归一化电极膜厚由h / L表示时，输入/输出IDT的配对数N1满足下列公式43-11（h / L）