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公开(公告)号：US5252553A
公开(公告)日：1993-10-12
申请号：US885848
申请日：1992-05-20
CPC分类号： H01L39/2461 , Y10S505/731 , Y10S505/732 , Y10S505/736
摘要： In order to prepare a good quality crystalline thin film of compound oxide superconductor on a silicon wafer, before the thin film of compound oxide superconductor is deposited on the silicon wafer, the silicon wafer is first heated at a temperature of higher than 900.degree. C. in a high vacuum of less than 10.sup.-6 Torr, then, a thin film of ZrO.sub.2 is deposited on the silicon wafer, and finally, the thin film of ZrO.sub.2 deposited on the silicon wafer is annealed in air at a temperature of 800.degree. to 850.degree. C.
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2.发明授权
公开(公告)号：US5428005A
公开(公告)日：1995-06-27
申请号：US259348
申请日：1994-06-14
CPC分类号： H01L39/2435 , H01L39/128 , Y10S428/93 , Y10S505/701
摘要： A superconducting thin film of compound oxide material deposited on a substrate, comprising a plurality of a-axis or b-axis oriented unit layers (2) and a plurality of c-axis oriented unit layers (1), each unit layer (1, 2) being made of the compound oxide material and being laminated alternately one over another on the substrate (3).
摘要翻译： 沉积在基板上的复合氧化物材料的超导薄膜包括多个a轴或b轴定向单元层（2）和多个c轴取向单元层（1），每个单位层（1， 2）由复合氧化物材料制成，并且在基板（3）上交替层叠。
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公开(公告)号：US5292718A
公开(公告)日：1994-03-08
申请号：US957639
申请日：1992-10-06
CPC分类号： H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/73 , Y10S505/731 , Y10S505/732
摘要： Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order.In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is preheated at 600.degree.-650.degree. C. for at least 5 minutes in the presence of O.sub.2, and is heated at a temperature between 200.degree. and 400.degree. C. during the non-superconducting intermediate thin film layer is deposited.
摘要翻译： 通过在衬底上依次沉积第一氧化物超导体薄层，非超导中间薄膜层和第二氧化物超导体薄膜层来制造超导结的工艺的改进。 在本发明中，非超导中间薄膜层由MgO构成，在O 2存在下将基板在600〜650℃预热至少5分钟，并在200度〜 在非超导中间薄膜层期间沉积400℃。
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公开(公告)号：US5258366A
公开(公告)日：1993-11-02
申请号：US921336
申请日：1992-07-29
IPC分类号： C23C14/34 , C23C14/28 , C30B29/22 , H01B12/06 , H01B13/00 , H01L21/203 , H01L39/24 , B05D3/06 , B05D5/12
CPC分类号： H01L39/2448 , C23C14/28 , Y10S505/73 , Y10S505/732
摘要： Improvement in a method for preparing a superconducting thin film of compound oxide on a substrate (6) by laser evaporation technique. A rear surface of a target (7) used is cooled forcedly by a cooling system (9) during film formation.
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5.发明授权
公开(公告)号：US5240904A
公开(公告)日：1993-08-31
申请号：US707798
申请日：1991-05-30
申请人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
发明人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S505/73 , Y10S505/731 , Y10S505/732
摘要： Improvement in a process for preparing a-axis oriented thin film of high-Tc oxide superconducting material by laser evaporation method. Before the a-axis oriented thin film of oxide superconducting material is deposited by laser evaporation method, an under-layer having an a-axis orientation of the crystal of the same oxide superconducting material is deposited on a substrate previously by sputtering.
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公开(公告)号：US5357059A
公开(公告)日：1994-10-18
申请号：US545618
申请日：1990-06-29
申请人： Saburo Tanaka , Hideo Itozaki , Hidenori Nakanishi
发明人： Saburo Tanaka , Hideo Itozaki , Hidenori Nakanishi
CPC分类号： H01L39/2474 , Y10S505/706 , Y10S505/925
摘要： An electrical connection between an electric conductor and an oxide superconductor is effected without the intermediary of a thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere. This electrical connection is formed by removing the thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere, and by electrically connecting the electric conductor and an exposed surface of the oxide superconductor.
摘要翻译： 电导体和氧化物超导体之间的电连接是在没有通过将氧化物超导体留在大气中而形成的薄绝缘层的介质的情况下实现的。 通过去除通过在氧化物中留下氧化物超导体而形成的薄绝缘层，并且通过电连接导电体和氧化物超导体的暴露表面而形成该电连接。
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7.发明授权
公开(公告)号：US5250511A
公开(公告)日：1993-10-05
申请号：US921028
申请日：1992-07-29
CPC分类号： H01L39/2448 , C23C14/28 , Y10S505/73 , Y10S505/732
摘要： Method for preparing a superconducting thin film of compound oxide having improved properties on a substrate by laser evaporation technique. A target has a surface area which is smaller than an irradiation area of a spot of a laser beam used, so that whole surface of the surface is irradiated with the laser beam.
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8.发明授权
公开(公告)号：US5151408A
公开(公告)日：1992-09-29
申请号：US668263
申请日：1991-03-11
申请人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
发明人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S505/731 , Y10S505/732
摘要： A process for preparing a-axis oriented thin film of oxide superconducting material on a substrate by two steps. In the first step, an under-layer of an oxide superconducting material is deposited on the substrate under such a condition that the substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of the oxide superconducting material. In the second step, an upper-layer of the same oxide superconducting material is deposited on a surface of the resulting under-layer under such a condition that the substrate is heated at a temperature which is lowered by 10.degree. to 100.degree. C. than the temperature which is used in the first step.
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公开(公告)号：US6157044A
公开(公告)日：2000-12-05
申请号：US029361
申请日：1993-03-10
申请人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
发明人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
CPC分类号： H01L39/225
摘要： A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.
摘要翻译： 隧道结型约瑟夫逊装置包括由复合氧化物超导体材料形成的一对超导体层和形成在该对超导体层之间的绝缘体层。 绝缘体层由复合氧化物形成，该复合氧化物由与超导体层的复合氧化物超导体材料相同的构成元素构成，但是具有不具有超导特性的原子比。 此外，超导体层和绝缘体层在供给氧的同时连续地形成。
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公开(公告)号：US5693146A
公开(公告)日：1997-12-02
申请号：US478646
申请日：1995-06-07
申请人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
发明人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
CPC分类号： C23C14/28 , H01L39/2448
摘要： There is disclosed a device for forming a thin film on a substrate by irradiating a target of a compound oxide superconducting material with a laser beam and evaporating on the substrate a thin film corresponding to a composition of the target in an oxygen ambient atmosphere by laser evaporation, a scanning optical system for causing the laser beam to scan being disposed in an optical path of the laser beam.
摘要翻译： 公开了一种用于通过用激光束照射复合氧化物超导材料的目标物在基板上形成薄膜的装置，并且通过激光蒸发在基板上在氧气环境气氛中在基板上蒸发对应于靶组成的薄膜 用于使激光束扫描的扫描光学系统设置在激光束的光路中。
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