Method for the manufacture of active matrix display apparatuses
    2.
    发明授权
    Method for the manufacture of active matrix display apparatuses 失效
    制作活性矩阵显示装置的方法

    公开(公告)号:US5102361A

    公开(公告)日:1992-04-07

    申请号:US467648

    申请日:1990-01-19

    IPC分类号: G02F1/1362

    CPC分类号: G02F1/13624

    摘要: A method for manufacturing an active matrix display apparatus comprising: forming picture element electrodes disposed in a matrix at the inner surface of either one of a pair of substrates, switching elements electrically connected to the picture element electrodes respectively, spare switching elements disposed close to the picture element electrodes in a non-conductive state respectively, and connections, each including an extension end of each of the spare switching elements and a metal piece electrically connected to one end of each of the picture element electrodes, the extension end and metal piece being disposed opposite to each other in a non-conductive state; applying a drive signal to a display medium via the picture element electrodes and opposite electrodes thereby detecting a defect in the switching element; and irradiating energy onto the connection between the picture element electrode connected to the switching element, the defect of which has been detected, and the spare switching element, thereby electrically connecting the picture element electrode with the spare switching element, whereby the apparatus can be provided with a high yield.

    Active matrix board
    3.
    发明授权
    Active matrix board 失效
    主动矩阵板

    公开(公告)号:US5463230A

    公开(公告)日:1995-10-31

    申请号:US338795

    申请日:1994-11-07

    摘要: An active matrix board comprising pixel electrodes arranged in a matrix fashion on an insulating substrate, and scan lines each having an addition capacity electrode placed in a superposed relation with a portion of a corresponding one of the pixel electrodes, said scan lines each comprising a first scan line formed in an area other than the area in which said addition capacity electrode is held in a superposed relation with said pixel electrode, and a second scan line formed to cover said first scan line and having said addition capacity electrode as its part, whereby the possibility of pixel defect occurrence is reduced and the production yield of display apparatuses is improved.

    摘要翻译: 一种有源矩阵板,包括以矩阵方式布置在绝缘基板上的像素电极,以及扫描线,每条扫描线具有与相应一个像素电极的一部分重叠关系放置的加法电极电极,所述扫描线各自包括第一 扫描线形成在与所述加法电极电极保持的区域之外的区域中,所述区域与所述像素电极重叠,并且形成为覆盖所述第一扫描线并且具有所述加法电极电极作为其一部分的第二扫描线,由此 像素缺陷发生的可能性降低,显示装置的制作成品率提高。

    Metallic wiring board and a method for producing the same
    10.
    发明授权
    Metallic wiring board and a method for producing the same 失效
    金属布线板及其制造方法

    公开(公告)号:US5672251A

    公开(公告)日:1997-09-30

    申请号:US408976

    申请日:1995-03-23

    摘要: The method for producing a metallic wiring board of this invention comprises the steps of: implanting nitrogen on a surface of a substrate; forming a metallic film including, as a main component, one of Ta and Nb on the surface of the substrate where nitrogen is implanted by a sputtering method to form a metallic wiring by patterning the metallic film; and forming an insulating film by anodic oxidation of a surface of the metallic wiring. In the step of forming a metallic wiring form Ta or Nb on a substrate or a protective layer including nitrogen to anodic-oxidize the surface of the metallic wiring, Ta ions or Nb ions do not enter the substrate. Further, the substrate or a protective layer is doped with nitrogen, and a Ta layer is formed by the sputtering method thereon. The sputtering method has a characteristic that a material contained in the substrate is mixed into a film formed in the initial stage of the coating. Therefore, the doped nitrogen enters the Ta film, and a thin .alpha.-Ta layer is formed on the substrate or the protective film. The Ta layer to be epitaxially grown thereon is an .alpha.-Ta layer including no impurity. Thus, a Ta layer with a specific resistance of about 25 .mu..OMEGA.cm is obtained.

    摘要翻译: 本发明的金属线路板的制造方法包括以下步骤:在基板的表面上注入氮气; 通过溅射法形成金属膜,该金属膜包括通过溅射法在其上注入氮的衬底的表面上的Ta和Nb中的一个作为主要成分,通过图案化金属膜形成金属布线; 以及通过金属布线的表面的阳极氧化形成绝缘膜。 在基板或包括氮的保护层上形成金属配线形式的Ta或Nb的步骤中,对金属布线的表面进行阳极氧化,Ta离子或Nb离子不会进入基板。 此外,衬底或保护层掺杂有氮,并且通过其上的溅射方法形成Ta层。 溅射法具有将包含在基板中的材料混合到在涂层的初始阶段形成的膜的特征。 因此,掺杂氮气进入Ta膜,在基板或保护膜上形成薄的α-Ta层。 要外延生长的Ta层是不含杂质的α-Ta层。 因此,得到电阻率约为25微米欧米伽厘米的Ta层。