公开(公告)号：US07439114B2

公开(公告)日：2008-10-21

申请号：US11207458

申请日：2005-08-18

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US07061017B2

公开(公告)日：2006-06-13

申请号：US10714829

申请日：2003-11-14

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L29/76

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US06274414B1

公开(公告)日：2001-08-14

申请号：US08911505

申请日：1997-08-14

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L21324

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US20050287825A1

公开(公告)日：2005-12-29

申请号：US11207458

申请日：2005-08-18

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi kuwahara

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/336 ,  H01L21/42 ,  H01L21/4763 ,  H01L21/477 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US06797651B2

公开(公告)日：2004-09-28

申请号：US10080424

申请日：2002-02-22

申请人： Takashi Hagino ,  Kazuhiro Imao ,  Ken Wakita ,  Toshio Monzen ,  Hidenori Ogata ,  Shiro Nakanishi ,  Yoshihiro Morimoto

发明人： Takashi Hagino ,  Kazuhiro Imao ,  Ken Wakita ,  Toshio Monzen ,  Hidenori Ogata ,  Shiro Nakanishi ,  Yoshihiro Morimoto

IPC分类号： H01L2126

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268

摘要： A laser annealing apparatus is provided in which laser light is irradiated onto an amorphous semiconductor layer placed inside an annealing chamber through a chamber window, thereby poly-crystallizing the amorphous semiconductor film. Inside the annealing chamber a low degree vacuum (about 1.3×103 Pa to about 1.3 Pa) is maintained at a room temperature. An inert gas such as nitrogen, hydrogen, or argon is introduced into the atmosphere while maintaining the low degree vacuum. As a result, the surface smoothness of the polycrystalline semiconductor layer is comparable to that resulting from high degree vacuum annealing, while, unlike high degree vacuum annealing, there is less contamination of the chamber window and productivity is improved.

摘要翻译： 提供一种激光退火装置，其中激光照射到通过室窗放置在退火室内部的非晶半导体层上，从而使非晶半导体膜多晶化。 在退火室内，将低度真空度（约1.3×10 3 Pa至约1.3Pa）保持在室温。 将惰性气体如氮气，氢气或氩气引入气氛中同时保持低度真空度。 结果，多晶半导体层的表面平滑度与高度真空退火得到的表面平滑度相当，而与高度真空退火不同，室窗口的污染较少，生产率提高。

公开(公告)号：US6072194A

公开(公告)日：2000-06-06

申请号：US327219

申请日：1999-06-07

申请人： Ken Wakita ,  Hidenori Ogata

发明人： Ken Wakita ,  Hidenori Ogata

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/263

CPC分类号： H01L29/66757 ,  H01L21/2026

摘要： Laser anneal processing of a semiconductor layer is repeated in a number of steps. Grain size is increased using high energy ELA for a first step, and grain sizes are uniformed using ELA with low energy for a later step. As a defective crystallization region occurs in an excessive energy region during the ELA for the first step, in the ELA for the second time, excessive energy is removed and the defective crystallization region is eliminated by reducing the energy to an optimal value, thereby improving the crystallinity of a p-Si layer.

摘要翻译： 在多个步骤中重复半导体层的激光退火处理。 使用高能ELA进行第一步的晶粒尺寸增加，并且使用具有低能量的ELA将晶粒尺寸均匀化以用于后续步骤。 由于在第一阶段的ELA期间，在过量的能量区域中出现缺陷结晶区域，所以在ELA中第二次，通过将能量减少到最佳值来消除过多的能量并消除不良结晶区域，从而改善 p-Si层的结晶度。

公开(公告)号：US5960323A

公开(公告)日：1999-09-28

申请号：US877168

申请日：1997-06-17

申请人： Ken Wakita ,  Hidenori Ogata

发明人： Ken Wakita ,  Hidenori Ogata

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/263

CPC分类号： H01L29/66757 ,  H01L21/2026

摘要： Laser anneal processing of a semiconductor layer is repeated in a number of steps. Grain size is increased using high energy ELA for a first step, and grain sizes are uniformed using ELA with low energy for a later step. As a defective crystallization region occurs in an excessive energy region during the ELA for the first step, in the ELA for the second time, excessive energy is removed and the defective crystallization region is eliminated by reducing the energy to an optimal value, thereby improving the crystallinity of a p-Si layer.

公开(公告)号：US4833100A

公开(公告)日：1989-05-23

申请号：US939101

申请日：1986-12-08

申请人： Hiroshi Hanafusa ,  Kiyoshi Yoneda ,  Hidenori Ogata

发明人： Hiroshi Hanafusa ,  Kiyoshi Yoneda ,  Hidenori Ogata

IPC分类号： H01L21/20 ,  H01L21/203

CPC分类号： H01L21/02532 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10S148/017 ,  Y10S148/025 ,  Y10S148/169

摘要： The present invention relates to a method for producing a semiconductor thin film, in which a single crystalline silicon film is grown on an insulative single crystalline substrate, such as a single crystalline sapphire substrate, by the molecular beam epitaxy method. Silicon molecular beams are irradiated onto the substrate under the conditions wherein a substrate temperature is kept at 700.degree. to 900.degree. C. and an intensity of the molecular beams is kept within a range from 1.times.10.sup.12 atoms/cm.sup.2 .multidot.sec to 1.times.10.sup.13 atoms/cm.sup.2 .multidot.sec to clean a surface of the substrate and then the intensity of the molecular beams is increased to form the single crystalline silicon film. Thus, the substrate can be cleaned without being defected.

摘要翻译： 本发明涉及通过分子束外延法在单晶蓝宝石衬底等绝缘性单晶衬底上生长单晶硅膜的半导体薄膜的制造方法。 在基板温度保持在700〜900℃的条件下将硅分子束照射到基板上，分子束的强度保持在1×10 12原子/ cm 2×1〜1×10 13原子/ cm 2×的范围内，以清洁 然后增加分子束的强度，形成单晶硅膜。 因此，可以清洁基板而不会发生缺陷。

公开(公告)号：US09082730B2

公开(公告)日：2015-07-14

申请号：US13976014

申请日：2011-12-27

申请人： Hidenori Ogata ,  Yoshimasa Fujita

发明人： Hidenori Ogata ,  Yoshimasa Fujita

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3276 ,  H01L27/3293 ,  H01L51/52 ,  H01L51/524 ,  H01L51/56

摘要： An organic EL display unit is an organic EL display unit which includes a first substrate; an organic EL element which is located on the first substrate, which includes a first electrode, an organic layer containing at least an organic light emitting layer, and a second electrode, and which is configured to emit excitation light; a second substrate; and an optical conversion layer which is located on the second substrate and which is configured to emit light to the outside through a display surface, the light being obtained by conversion of a color tone of the excitation light, the display surface is flat and rectangular, and the second substrate is divided into a plurality of sections along a long side direction of the display surface.

摘要翻译： 有机EL显示单元是包括第一基板的有机EL显示单元; 位于第一基板上的有机EL元件，其包括第一电极，至少含有有机发光层的有机层和第二电极，并且被配置为发射激发光; 第二基板; 以及光转换层，其位于所述第二基板上并且被配置为通过显示表面向外部发光，所述光通过转换所述激发光的色调而获得，所述显示面是平坦且矩形的， 并且第二基板沿着显示表面的长边方向被分成多个部分。

公开(公告)号：US20120126218A1

公开(公告)日：2012-05-24

申请号：US13387332

申请日：2010-04-13

申请人： Hidenori Ogata ,  Yoshimasa Fujita ,  Mitsuhiro Koden

发明人： Hidenori Ogata ,  Yoshimasa Fujita ,  Mitsuhiro Koden

IPC分类号： H01L51/10 ,  H01L51/56 ,  H01L51/48 ,  H01L51/52 ,  H01L51/40 ,  H01L51/44

CPC分类号： H01L51/5203 ,  H01L51/006 ,  H01L51/0085 ,  H05B33/10

摘要： An organic electric-field element includes an elongated support base member, a first electrode provided on the support base member, an organic layer provided to cover the first electrode, and a second electrode provided to cover the organic layer. At one end portion of the support base member, a two-layer structure region including the support base member and the first electrode is provided, and a three-layer structure region including the support base member, the first electrode, and the organic layer is provided, extending continuously from the other end of the two-layer structure region. At the other end portion of the support base member, a two-layer structure region including the support base member and the second electrode is provided, and a three-layer structure region including the support base member, the second electrode, and the organic layer is provided, extending continuously from one end of the two-layer structure region.

摘要翻译： 有机电场元件包括细长的支撑基底构件，设置在支撑基底构件上的第一电极，设置成覆盖第一电极的有机层和设置成覆盖有机层的第二电极。 在支撑基体的一个端部设置有包括支撑基体和第一电极的两层结构区域，并且包括支撑基底构件，第一电极和有机层的三层结构区域是 提供，从两层结构区域的另一端连续延伸。 在支撑基体的另一端部设置包括支撑基体和第二电极的两层结构区域，并且包括支撑基底构件，第二电极和有机层的三层结构区域 设置成从两层结构区域的一端连续延伸。