公开(公告)号：US06797651B2

公开(公告)日：2004-09-28

申请号：US10080424

申请日：2002-02-22

申请人： Takashi Hagino ,  Kazuhiro Imao ,  Ken Wakita ,  Toshio Monzen ,  Hidenori Ogata ,  Shiro Nakanishi ,  Yoshihiro Morimoto

发明人： Takashi Hagino ,  Kazuhiro Imao ,  Ken Wakita ,  Toshio Monzen ,  Hidenori Ogata ,  Shiro Nakanishi ,  Yoshihiro Morimoto

IPC分类号： H01L2126

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268

摘要： A laser annealing apparatus is provided in which laser light is irradiated onto an amorphous semiconductor layer placed inside an annealing chamber through a chamber window, thereby poly-crystallizing the amorphous semiconductor film. Inside the annealing chamber a low degree vacuum (about 1.3×103 Pa to about 1.3 Pa) is maintained at a room temperature. An inert gas such as nitrogen, hydrogen, or argon is introduced into the atmosphere while maintaining the low degree vacuum. As a result, the surface smoothness of the polycrystalline semiconductor layer is comparable to that resulting from high degree vacuum annealing, while, unlike high degree vacuum annealing, there is less contamination of the chamber window and productivity is improved.

摘要翻译： 提供一种激光退火装置，其中激光照射到通过室窗放置在退火室内部的非晶半导体层上，从而使非晶半导体膜多晶化。 在退火室内，将低度真空度（约1.3×10 3 Pa至约1.3Pa）保持在室温。 将惰性气体如氮气，氢气或氩气引入气氛中同时保持低度真空度。 结果，多晶半导体层的表面平滑度与高度真空退火得到的表面平滑度相当，而与高度真空退火不同，室窗口的污染较少，生产率提高。

公开(公告)号：US07439114B2

公开(公告)日：2008-10-21

申请号：US11207458

申请日：2005-08-18

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US07061017B2

公开(公告)日：2006-06-13

申请号：US10714829

申请日：2003-11-14

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L29/76

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US06274414B1

公开(公告)日：2001-08-14

申请号：US08911505

申请日：1997-08-14

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L21324

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US20050287825A1

公开(公告)日：2005-12-29

申请号：US11207458

申请日：2005-08-18

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi kuwahara

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/336 ,  H01L21/42 ,  H01L21/4763 ,  H01L21/477 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US20050062047A1

公开(公告)日：2005-03-24

申请号：US10945782

申请日：2004-09-21

申请人： Ryuji Nishikawa ,  Kazuhiro Imao ,  Ken Wakita ,  Kiyoshi Yoneda

发明人： Ryuji Nishikawa ,  Kazuhiro Imao ,  Ken Wakita ,  Kiyoshi Yoneda

IPC分类号： H01L51/50 ,  G09F9/30 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L29/78645 ,  H01L29/78675

摘要： A device has a first transistor and a second transistor wherein a channel length direction of the first transistor extends along a first direction and a channel length direction of the second transistor extends along a second direction intersecting the first direction, and the second transistor is formed on a same substrate as the first transistor. A first channel region and a second channel region are formed in semiconductor layers which are simultaneously formed and a mobility of the semiconductor film has an anisotropy in the first and second directions. With this structure, transistors having different mobilities can be obtained while using the semiconductor films formed on the same substrate and from a same material. For example, it is possible to form a transistor in which a high resistance is required using a semiconductor layer of the same characteristics as that in a transistor in which a high speed operation is desired, on the same substrate and with a minimum area.

摘要翻译： 器件具有第一晶体管和第二晶体管，其中第一晶体管的沟道长度方向沿着第一方向延伸，并且第二晶体管的沟道长度方向沿着与第一方向相交的第二方向延伸，并且第二晶体管形成在 与第一晶体管相同的衬底。 在同时形成的半导体层中形成第一沟道区和第二沟道区，并且半导体膜的迁移率在第一和第二方向上具有各向异性。 利用这种结构，可以在使用形成在同一衬底上的相同材料的半导体膜上获得具有不同迁移率的晶体管。 例如，可以在同一衬底上并且具有最小面积的情况下，使用与需要高速运算的晶体管相同特性的半导体层，形成要求高电阻的晶体管。

公开(公告)号：US6072194A

公开(公告)日：2000-06-06

申请号：US327219

申请日：1999-06-07

申请人： Ken Wakita ,  Hidenori Ogata

发明人： Ken Wakita ,  Hidenori Ogata

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/263

CPC分类号： H01L29/66757 ,  H01L21/2026

摘要： Laser anneal processing of a semiconductor layer is repeated in a number of steps. Grain size is increased using high energy ELA for a first step, and grain sizes are uniformed using ELA with low energy for a later step. As a defective crystallization region occurs in an excessive energy region during the ELA for the first step, in the ELA for the second time, excessive energy is removed and the defective crystallization region is eliminated by reducing the energy to an optimal value, thereby improving the crystallinity of a p-Si layer.

摘要翻译： 在多个步骤中重复半导体层的激光退火处理。 使用高能ELA进行第一步的晶粒尺寸增加，并且使用具有低能量的ELA将晶粒尺寸均匀化以用于后续步骤。 由于在第一阶段的ELA期间，在过量的能量区域中出现缺陷结晶区域，所以在ELA中第二次，通过将能量减少到最佳值来消除过多的能量并消除不良结晶区域，从而改善 p-Si层的结晶度。

公开(公告)号：US5960323A

公开(公告)日：1999-09-28

申请号：US877168

申请日：1997-06-17

申请人： Ken Wakita ,  Hidenori Ogata

发明人： Ken Wakita ,  Hidenori Ogata

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/263

CPC分类号： H01L29/66757 ,  H01L21/2026

摘要： Laser anneal processing of a semiconductor layer is repeated in a number of steps. Grain size is increased using high energy ELA for a first step, and grain sizes are uniformed using ELA with low energy for a later step. As a defective crystallization region occurs in an excessive energy region during the ELA for the first step, in the ELA for the second time, excessive energy is removed and the defective crystallization region is eliminated by reducing the energy to an optimal value, thereby improving the crystallinity of a p-Si layer.

公开(公告)号：US06207971B1

公开(公告)日：2001-03-27

申请号：US08997763

申请日：1997-12-24

申请人： Yushi Jinno ,  Ken Wakita ,  Masahiro Minegishi

发明人： Yushi Jinno ,  Ken Wakita ,  Masahiro Minegishi

IPC分类号： H01L2904

CPC分类号： G02F1/13454 ,  G09G3/3648 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678

摘要： A thin film transistor which can be used in an LCD display panel includes an insulator substrate, a gate electrode located on the insulator substrate, an insulator film provided on the insulator substrate and the gate electrode, and a polycrystalline silicon film located on the insulator film. A channel is defined in a first portion of the polycrystalline silicon film over the gate electrode, and a drain and a source are defined in second and third portions of the polycrystalline silicon film over the insulator substrate. Grain sizes of the drain and source are equal to or greater than a grain size of the channel.

摘要翻译： 可用于LCD显示面板的薄膜晶体管包括绝缘体基板，位于绝缘体基板上的栅电极，设置在绝缘体基板和栅电极上的绝缘膜，以及位于绝缘膜上的多晶硅膜 。 沟道被限定在栅电极上的多晶硅膜的第一部分中，并且漏极和源极被限定在绝缘体衬底上的多晶硅膜的第二和第三部分中。 漏极和源极的晶粒尺寸等于或大于通道的晶粒尺寸。

公开(公告)号：US08896775B2

公开(公告)日：2014-11-25

申请号：US13042595

申请日：2011-03-08

申请人： Minoru Moriwaki ,  Masahiro Yasukawa ,  Ken Wakita

发明人： Minoru Moriwaki ,  Masahiro Yasukawa ,  Ken Wakita

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786

CPC分类号： H01L27/12 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/78633

摘要： An electro-optical device includes a pixel electrode provided on a substrate, a transistor provided between the substrate and the pixel electrode, a first capacitor electrode provided between the pixel electrode and the transistor, and be electrically connected to the pixel electrode and the transistor, a second capacitor electrode provided between the pixel electrode and the first capacitor electrode, be located so as to be opposite the first capacitor electrode via a capacitor insulating film, and be supplied with a predetermined electric potential, and a light-shielding film provided between the pixel electrode and the second capacitor electrode, be located so as to be at least partially overlapped by the transistor, and be electrically connected to the second capacitor electrode via a contact hole formed in an insulating film disposed between the second capacitor electrode and the light-shielding film.

摘要翻译： 电光装置包括设置在基板上的像素电极，设置在基板和像素电极之间的晶体管，设置在像素电极和晶体管之间并与像素电极和晶体管电连接的第一电容器电极， 设置在像素电极和第一电容器电极之间的第二电容器电极经由电容器绝缘膜与第一电容器电极相对并且被提供预定电位，并且设置在第一电容器电极之间的遮光膜 像素电极和第二电容器电极被定位成至少部分地被晶体管重叠，并且经由形成在布置在第二电容器电极和发光元件之间的绝缘膜中的接触孔电连接到第二电容器电极， 屏蔽膜。