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    Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same
    3.
    发明授权
    Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same 有权
    电子发射器件及其制造方法及其驱动方法。 以及包括电子发射器件的图像显示器及其制造方法

    公开(公告)号：US06635979B1

    公开(公告)日：2003-10-21

    申请号：US09601907

    申请日：2000-09-25

    申请人： Tetsuya Shiratori ,  Hideo Kurokawa ,  Masahiro Deguchi ,  Makoto Kitabatake

    发明人： Tetsuya Shiratori ,  Hideo Kurokawa ,  Masahiro Deguchi ,  Makoto Kitabatake

    IPC分类号： H01J102

    CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/022 ,  H01J2329/00

    摘要： An electron emitting device includes at least an electron transporting member (1), an electron emitting member (3), and an electric field concentration region (2) formed between the electron transporting member (1) and the electron emitting member (3). For example, the electron transporting member (1) may be a conductive layer, the electric field concentration region (2) may be formed of an insulating layer formed on the conductive layer, and the electron emitting member (3) may be formed of particles provided on the insulating layer. Due to the electric field concentration in the electric field concentration region (2), electrons are easily injected from the electron transporting member (1) to the electron emitting member (3).

    摘要翻译： 电子发射器件至少包括形成在电子传输部件（1）和电子发射部件（3）之间的电子传输部件（1），电子发射部件（3）和电场集中区域（2）。 例如，电子传输部件（1）可以是导电层，电场集中区域（2）可以由形成在导电层上的绝缘层形成，并且电子发射部件（3）可以由颗粒形成 设置在绝缘层上。 由于电场浓度区域（2）中的电场浓度，电子容易从电子传输部件（1）注入到电子发射部件（3）。

    Process for forming diamond films by nucleation
    4.
    发明授权
    Process for forming diamond films by nucleation 失效
    通过成核形成金刚石膜的方法

    公开(公告)号：US6068883A

    公开(公告)日：2000-05-30

    申请号：US11509

    申请日：1998-02-03

    申请人： Masahiro Deguchi ,  Makoto Kitabatake ,  Hideo Kurokawa ,  Tetsuya Shiratori

    发明人： Masahiro Deguchi ,  Makoto Kitabatake ,  Hideo Kurokawa ,  Tetsuya Shiratori

    IPC分类号： C23C16/02 ,  C23C16/27 ,  C30B25/02 ,  C30B25/10 ,  C30B25/18 ,  C23C16/26

    CPC分类号： C30B25/18 ,  C23C16/0272 ,  C23C16/27 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04

    摘要： A diamond film of this invention is formed from growth nuclei distributed on a substrate at a density of at least 1.times.10.sup.10 numbers/cm.sup.2, the film is dense, having flat surface and great freedom in the thickness of the continuous film. The growth nuclei can be distributed at such a high density by, for example, dispersing diamond grains of average diameter of no more than 0.1 .mu.m in an acid solution, and distributing the grains on a substrate immersed in the solution by any means including ultrasonic vibration and voltage application. Such techniques for nucleation are simple and excellent in repeatability. The diamond film is formed on the substrate using the diamond grains as the growth nuclei by the plasma CVD or any other techniques.

    摘要翻译： PCT No.PCT / JP97 / 01992 Sec。 371日期1998年2月3日 102（e）1998年2月3日PCT 1997年6月9日PCT公布。 第WO97 / 47789号公报 日期1997年12月18日本发明的金刚石薄膜由分布在基材上的生长核以至少1×10 10个/ cm 2的密度形成，薄膜致密，具有平坦表面，连续薄膜的厚度自由度高。 生长核可以通过例如在酸性溶液中分散平均直径不大于0.1μm的金刚石晶粒，以这样的高密度分布，并通过任何方式将沉淀在溶液中的晶粒分布在超声波 振动和电压应用。 这种成核技术简单，重复性好。 使用金刚石晶粒作为生长核，通过等离子体CVD或任何其它技术在衬底上形成金刚石膜。

    Electron emitting device and method of manufacturing the same
    5.
    发明授权
    Electron emitting device and method of manufacturing the same 有权
    电子发射元件及其制造方法

    公开(公告)号：US06445114B1

    公开(公告)日：2002-09-03

    申请号：US09402899

    申请日：1999-12-10

    申请人： Hideo Kurokawa ,  Tetsuya Shiratori ,  Toshifumi Sato ,  Masahiro Deguchi ,  Makoto Kitabatake

    发明人： Hideo Kurokawa ,  Tetsuya Shiratori ,  Toshifumi Sato ,  Masahiro Deguchi ,  Makoto Kitabatake

    IPC分类号： H01J130

    CPC分类号： H01J1/316 ,  H01J2329/00

    摘要： The first basic structure of the electron emission element of the present invention, includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes. According to these structures, an electron emission element with high stability can be obtained, in which emissions can be emitted efficiently and uniformly even in the absence of a bias voltage (electric field) from outside in an output (emission) direction of the electrons, by utilizing a transverse electric field generated between the electrodes disposed in a horizontal direction at a predetermined interval or an in-plane electric current flowing through the conductive layer disposed between the electrodes.

    摘要翻译： 本发明的电子发射元件的第一基本结构包括至少两个以预定间隔设置在水平方向上的电极，以及多个电子发射部分，其由分散地设置在 电极。 另一方面，本发明的电子发射元件的第二基本结构包括以预定间隔设置的至少两个电极，设置在电极之间以与其电连接的导电层和多个电子发射 分散地设置在电极之间的导电层的表面上的由颗粒或聚集体构成的部分。 根据这些结构，可以获得具有高稳定性的电子发射元件，其中即使在电子的输出（发射）方向上没有来自外部的偏置电压（电场）的情况下也可以有效且均匀地发射， 通过利用在预定间隔沿水​​平方向布置的电极之间产生的横向电场或流过设置在电极之间的导电层的面内电流。

    Electron emission element and method for producing the same
    6.
    发明授权
    Electron emission element and method for producing the same 失效
    电子发射元件及其制造方法

    公开(公告)号：US06827624B2

    公开(公告)日：2004-12-07

    申请号：US10196032

    申请日：2002-07-15

    申请人： Hideo Kurokawa ,  Tetsuya Shiratori ,  Toshifumi Sato ,  Masahiro Deguchi ,  Makoto Kitabatake

    发明人： Hideo Kurokawa ,  Tetsuya Shiratori ,  Toshifumi Sato ,  Masahiro Deguchi ,  Makoto Kitabatake

    IPC分类号： H01J900

    CPC分类号： H01J1/316 ,  H01J2329/00

    摘要： The first basic structure of the electron emission element of the present invention includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes. According to these structures, an electron emission element with high stability can be obtained, in which emissions can be emitted efficiently and uniformly even in the absence of a bias voltage (electric field) from outside in an output (emission) direction of the electrons, by utilizing a transverse electric field generated between the electrodes disposed in a horizontal direction at a predetermined interval or an in-plane electric current flowing through the conductive layer disposed between the electrodes.

    摘要翻译： 本发明的电子发射元件的第一基本结构包括以预定间隔沿水​​平方向布置的至少两个电极和由分散地设置在电极之间的颗粒或聚集体的多个电子发射部分 。 另一方面，本发明的电子发射元件的第二基本结构包括以预定间隔设置的至少两个电极，设置在电极之间以与其电连接的导电层和多个电子发射 分散地设置在电极之间的导电层的表面上的由颗粒或聚集体构成的部分。 根据这些结构，可以获得具有高稳定性的电子发射元件，其中即使在电子的输出（发射）方向上没有来自外部的偏置电压（电场）的情况下也可以有效且均匀地发射， 通过利用在预定间隔沿水​​平方向布置的电极之间产生的横向电场或流过设置在电极之间的导电层的面内电流。

    Electron-emitting device
    8.
    发明授权
    Electron-emitting device 失效
    电子发射器件

    公开(公告)号：US06350999B1

    公开(公告)日：2002-02-26

    申请号：US09449525

    申请日：1999-11-29

    申请人： Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

    发明人： Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

    IPC分类号： H01L310328

    CPC分类号： H01J1/308

    摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.

    摘要翻译： 在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。 用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。 表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。 由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。 如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。 由此获得优异的电子发射特性。

    Substrate surface treatment method
    9.
    发明授权
    Substrate surface treatment method 失效
    基材表面处理方法

    公开(公告)号：US5814194A

    公开(公告)日：1998-09-29

    申请号：US542008

    申请日：1995-10-12

    申请人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

    发明人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

    IPC分类号： C30B33/00 ,  C30B33/12

    CPC分类号： C30B33/00 ,  C30B29/04 ,  H01J2237/0812 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

    摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.

    摘要翻译： 包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。 通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。 具有一定能量的簇粒子被照射到金刚石的表面上。 辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。 因此，金刚石的表面被有效地平滑和蚀刻。

    Treatment method for diamonds
    10.
    发明授权
    Treatment method for diamonds 失效
    钻石的处理方法

    公开(公告)号：US6083354A

    公开(公告)日：2000-07-04

    申请号：US517460

    申请日：1995-08-21

    申请人： Masahiro Deguchi ,  Makoto Kitabatake ,  Takashi Hirao

    发明人： Masahiro Deguchi ,  Makoto Kitabatake ,  Takashi Hirao

    IPC分类号： C01B31/06 ,  C07C1/00 ,  C07C2/00 ,  C07C4/00 ,  C07C5/00

    CPC分类号： C01B31/065

    摘要： The object of the present invention is to provide a treatment method to remove lattice defects and non-diamond elements that exist in a diamond or a diamond thin film.The treatment method whereby the aforementioned object is achieved is to have the diamond or the diamond thin film irradiated by ultra-violet light or heated in an oxygen ambient.According to said treatment method, it has become possible to obtain a diamond or a diamond thin film that is free from the adverse effects of lattice defects and non-diamond elements.

    摘要翻译： 本发明的目的是提供一种去除存在于金刚石或金刚石薄膜中的晶格缺陷和非金刚石元素的处理方法。 实现上述目的的处理方法是使金刚石或金刚石薄膜用紫外线照射或在氧气氛中加热。 根据所述处理方法，可以获得没有晶格缺陷和非金刚石元素的不利影响的金刚石或金刚石薄膜。