公开(公告)号：US4674228A

公开(公告)日：1987-06-23

申请号：US779517

申请日：1985-09-24

申请人： Hideo Murata ,  Masaaki Yamauchi ,  Hajime Tanaka

发明人： Hideo Murata ,  Masaaki Yamauchi ,  Hajime Tanaka

IPC分类号： A01G1/04

CPC分类号： A01G1/042 ,  A01G1/04

摘要： A process for preparing artificial bed blocks for "Shiitake" mushroom cultivation, comprising culturing lumps of spawn (mycelia) in a bottle or other containers, taking out the grown-up mycelia from the container to be kept in a closed space, keeping culturing while raising humidity in the space close to saturation to form a new aerial hypha layer on the whole surface of the lumps of spawn for higher resistance to weed fungi, then sprinkling with water over the lumps in open space to prevent weed fungi from depositing.

摘要翻译： 一种用于制备“香菇”蘑菇栽培的人造床块的方法，包括在瓶或其他容器中培养产卵块（菌丝体），从容器中取出成长的菌丝体以保持在封闭空间中，保持培养同时 在接近饱和的空间中增加湿度，在产卵块的整个表面上形成一个新的空气菌丝层，用于更高的抗除草真菌，然后在露天空间内将水洒在块上，以防止杂草真菌沉积。

公开(公告)号：US5798005A

公开(公告)日：1998-08-25

申请号：US623861

申请日：1996-03-29

申请人： Hideo Murata ,  Shigeru Taniguchi

发明人： Hideo Murata ,  Shigeru Taniguchi

IPC分类号： C22F1/18 ,  C22F1/00 ,  C23C14/14 ,  C23C14/34 ,  H01L21/318 ,  C22C14/00

CPC分类号： H01J37/3426 ,  C23C14/3414

摘要： Provided are a titanium target material which can easily form a film in a narrow and deep contact hole and reduce the generation of PARTICLES. The present invention relates to a titanium target for sputtering, wherein X-ray diffraction intensity ratios on a sputtering plane are (0002)/(1011).gtoreq.0.8, (0002)/(1010).gtoreq.6; a recrystallized structure which has an average crystal grain size of 20 .mu.m or less and in which the proportion of crystal grains in which an acicular structure is present is 20% or less in terms of an area rate is formed.

摘要翻译： 提供一种钛靶材料，其可以容易地在窄而深的接触孔中形成膜并减少PARTICLES的产生。 本发明涉及一种溅射用钛靶，溅射面上的X射线衍射强度比为（0002）/（10 + E，ovs 1 + EE 1）> = 0.8，（0002）/（10+ E，ovs 1 + EE 0）> / = 6; 形成平均结晶粒径为20μm以下，其中存在针状结构的晶粒的比例以面积率计为20％以下的再结晶结构。

公开(公告)号：US06676728B2

公开(公告)日：2004-01-13

申请号：US10224402

申请日：2002-08-21

申请人： Gang Han ,  Hideo Murata ,  Hideki Nakamura

发明人： Gang Han ,  Hideo Murata ,  Hideki Nakamura

IPC分类号： C22B900

CPC分类号： C22C1/045 ,  B22F1/0081 ,  B22F2998/00 ,  B22F2999/00 ,  C23C14/3414 ,  B22F3/15 ,  B22F2202/13 ,  B22F1/0048 ,  B22F2201/013

摘要： There is provided a method of making a high-melting metal powder which has high purity and excellent formability and, particularly, of a metal powder of spherical particles made of Ta, Ru, etc. having a higher melting point than iron. There is also provided a target of high-melting metal or its alloy, which is made by the sintering under pressure of these powders and which has high purity and a low oxygen concentration and shows high density and a fine and uniform structure. A powder metal material mainly composed of a high-melting metal material is introduced into a thermal plasma into which hydrogen gas has been introduced, thereby to accomplish refining and spheroidizing. Further, an obtained powder is pressed under pressure by hot isostatic pressing, etc.

摘要翻译： 提供了一种制备高纯度和优异成型性的高熔点金属粉末的方法，特别是由具有比铁更高的熔点的Ta，Ru等制成的球形颗粒的金属粉末的方法。 还提供了通过在这些粉末的压力下烧结而制备的高熔点金属或其合金的靶，其具有高纯度和低氧浓度，并且显示出高密度和细微且均匀的结构。 将主要由高熔点金属材料构成的粉末金属材料引入已经引入氢气的热等离子体中，从而进行精炼和球化。 此外，通过热等静压等将得到的粉末压在压力下

公开(公告)号：US5718778A

公开(公告)日：1998-02-17

申请号：US623987

申请日：1996-03-29

申请人： Hideo Murata ,  Shigeru Taniguchi

发明人： Hideo Murata ,  Shigeru Taniguchi

IPC分类号： G02F1/1335 ,  C22F1/11 ,  C23C14/14 ,  C23C14/34 ,  G02F1/1343 ,  G02F1/136 ,  G11B5/85 ,  G11B5/851 ,  C22C1/18

CPC分类号： C23C14/3414

摘要： A chromium target is disclosed for use in the formation of chromium films or sheets of reduced thickness by means of sputtering. The target has a recrystallized structure represented by the equation, A/B.ltoreq.0.6, where A is the diffraction intensity of the (110) planes as determined by X-ray diffraction of a sputtered surface, and B is the diffraction intensity as determined from the sum of the (110), (200) and (211) planes. The target preferably has a deflective strength of above 500 MPa and an average crystal grain of below 50 .mu.m. The chromium target is produced by subjecting a starting chromium material to at least one stage of plastic working at a temperature of not higher than 1,000.degree. C., and subsequently by heat-treating the resulting chromium material for recrystallization at a temperature of higher than the recrystallization temperature of the chromium material but not higher than 1,200.degree. C.

摘要翻译： 公开了用于通过溅射形成厚度减小的铬膜或铬片的铬靶。 目标具有由等式A / B

公开(公告)号：US5334267A

公开(公告)日：1994-08-02

申请号：US99425

申请日：1993-07-30

申请人： Shigeru Taniguchi ,  Akira Kawakami ,  Hideo Murata

发明人： Shigeru Taniguchi ,  Akira Kawakami ,  Hideo Murata

IPC分类号： C22C19/07 ,  C23C14/34 ,  G11B5/85 ,  G11B5/851 ,  H01F10/16

CPC分类号： C23C14/3414 ,  C22C19/07 ,  Y10S72/70

摘要： A sputtering target preferably having an average crystal-grain diameter of 300 .mu.m or less and a maximum magnetic permeability of 100 or less is formed of an alloy consisting essentially of, by atom, 5- 30% Ni, 5- 14% Cr, not more than 6% V, and balance of Co and unavoidable impurities. It is preferable for the target to keep a working-strain remaining therein to reduce the maximum magnetic permeability. A method of producing a sputtering target for magnetic recording and reproducing, in which warm working or cold working is applied to the alloy.

摘要翻译： 优选平均晶粒直径为300μm以下，最大磁导率为100以下的溅射靶基本上由以下原料组成的合金：原子为5〜30％的Ni，5〜14％的Cr， 不超过6％V，余量为Co和不可避免的杂质。 靶材优选保持其中的工作应变以降低最大导磁率。 一种制造用于磁记录和再现的溅射靶的方法，其中对合金施加温加工或冷加工。

公开(公告)号：US07166921B2

公开(公告)日：2007-01-23

申请号：US10976837

申请日：2004-11-01

申请人： Hideo Murata

发明人： Hideo Murata

IPC分类号： H01L23/48

CPC分类号： H01L23/53219 ,  C23C14/3414 ,  G02F2001/136295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than 3.0%. The invention is also directed to a sputter target material having the same chemical composition as that of the Al alloy film.

摘要翻译： 公开了一种用于布线的Al合金膜，其由原子组成为0.2至1.5％的Ge和0.2至2.5％的Ni，余量基本为Al，其中Ge和Ni的总量不大于3.0％。 本发明还涉及具有与Al合金膜相同的化学成分的溅射靶材料。

公开(公告)号：US20050238527A1

公开(公告)日：2005-10-27

申请号：US10832244

申请日：2004-04-27

申请人： Hideo Murata

发明人： Hideo Murata

IPC分类号： C22C5/06

CPC分类号： C22C5/06 ,  C23C14/185 ,  C23C14/3414

摘要： Provided is a silver alloy film for which good properties of corrosion resistance, heat resistance and adhesiveness are required in thin-film electronic components such as a flat panel display, various semiconductor devices, a thin-film sensor and a magnetic head, a display device having the silver alloy film, and a sputtering-target material for forming the silver alloy film. The silver alloy film consists of, by atomic %, 0.1 to 1.0% Si, 0.1 to 0.7% in total of at least one element selected from the group consisting of Cu, Ti and Ge, and the balance of Ag and unavoidable impurities, wherein a total amount of all the additive elements to Ag is not more than 1.5%.

摘要翻译： 提供了一种银合金膜，其在诸如平板显示器，各种半导体器件，薄膜传感器和磁头的薄膜电子部件中需要耐腐蚀性，耐热性和粘合性的良好性能，显示装置 具有银合金膜，以及用于形成银合金膜的溅射靶材料。 银合金膜以原子％计含有0.1〜1.0％的Si，0.1〜0.7％的总量中的至少一种选自Cu，Ti，Ge的元素，其余为Ag和不可避免的杂质，其中， Ag的所有添加元素的总量不大于1.5％。

公开(公告)号：US5172057A

公开(公告)日：1992-12-15

申请号：US613727

申请日：1990-11-30

申请人： Kuniaki Yoshimura ,  Takehiko Sagara ,  Hideo Murata

发明人： Kuniaki Yoshimura ,  Takehiko Sagara ,  Hideo Murata

IPC分类号： G01D5/12 ,  G01D5/14 ,  G01D5/16 ,  G01D5/245 ,  G01D5/249

CPC分类号： G01D5/145 ,  G01D5/2497

摘要： The magnetic encoder of the present invention includes a magnetic signal generating drum having plural magnetic pole lines respectively having different magnetization pitches. Magnetic signals are repeatedly generated from the plural magnetic pole lines. A magnetic sensor is provided which includes plural magnetic resistant effect elements for converting the respective magnetic signals generated from the plural magnetic pole lines into electric signals. The plural magnetic resistant effect elements respectively confront the plural magnetic pole lines and output electric signals of different pulse numbers in accordance with incident magnetic signals. The magnetic signals generated from the plural magnetic poles lines and incident on the magnetic resistant effect elements are less that an anisotropic magnetic field level of the respective magnetic resistant effect elements. As such, respective values and waveform shapes of signals output by each of the magnetic resistant effect elements is substantially the same.

摘要翻译： PCT No.PCT / JP90 / 00481 Sec。 371日期1990年11月30日 102（e）1990年11月30日日期PCT提交1990年4月10日PCT公布。 公开号WO90 / 12290 1990年10月18日。本发明的磁编码器包括具有分别具有不同磁化间距的多个磁极线的磁信号发生鼓。 从多个磁极线重复产生磁信号。 提供一种磁传感器，其包括用于将从多个磁极线产生的各个磁信号转换为电信号的多个磁阻效应元件。 多个磁阻效应元件分别面对多个磁极线并根据入射的磁信号输出不同脉冲数的电信号。 从多个磁极线产生并入射到耐磁效应元件上的磁信号小于各磁阻效应元件的各向异性磁场电平。 因此，由各磁阻效应元件输出的信号的各个值和波形形状基本相同。

公开(公告)号：US20050118811A1

公开(公告)日：2005-06-02

申请号：US10976837

申请日：2004-11-01

申请人： Hideo Murata

发明人： Hideo Murata

IPC分类号： H01L21/203 ,  C22C21/00 ,  C23C14/34 ,  G02F1/1362 ,  H01L21/28 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L23/53219 ,  C23C14/3414 ,  G02F2001/136295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than 3.0%. The invention is also directed to a sputter target material having the same chemical composition as that of the Al alloy film.

摘要翻译： 公开了一种用于布线的Al合金膜，其由原子组成为0.2至1.5％的Ge和0.2至2.5％的Ni，余量基本为Al，其中Ge和Ni的总量不大于3.0％。 本发明还涉及具有与Al合金膜相同的化学成分的溅射靶材料。

公开(公告)号：US06589311B1

公开(公告)日：2003-07-08

申请号：US09612561

申请日：2000-07-07

申请人： Gang Han ,  Hideo Murata ,  Hideki Nakamura

发明人： Gang Han ,  Hideo Murata ,  Hideki Nakamura

IPC分类号： B22F312

CPC分类号： C22C1/045 ,  B22F1/0081 ,  B22F2998/00 ,  B22F2999/00 ,  C23C14/3414 ,  B22F3/15 ,  B22F2202/13 ,  B22F1/0048 ,  B22F2201/013

摘要： There is provided a method of making a high-melting metal powder which has high purity and excellent formability and, particularly, of a metal powder of spherical particles made of Ta, Ru, etc. having a higher melting point than iron. There is also provided a target of high-melting metal or its alloy, which is made by the sintering under pressure of these powders and which has high purity and a low oxygen concentration and shows high density and a fine and uniform structure. A powder metal material mainly composed of a high-melting metal material is introduced into a thermal plasma into which hydrogen gas has been introduced, thereby to accomplish refining and spheroidizing. Further, an obtained powder is pressed under pressure by hot isostatic pressing, etc.

摘要翻译： 提供了一种制备高纯度和优异成型性的高熔点金属粉末的方法，特别是由具有比铁更高的熔点的Ta，Ru等制成的球形颗粒的金属粉末的方法。 还提供了通过在这些粉末的压力下烧结而制备的高熔点金属或其合金的靶，其具有高纯度和低氧浓度，并且显示出高密度和细微且均匀的结构。 将主要由高熔点金属材料构成的粉末金属材料引入已经引入氢气的热等离子体中，从而进行精炼和球化。 此外，通过热等静压等将得到的粉末压在压力下