摘要:
A sputtering target preferably having an average crystal-grain diameter of 300 .mu.m or less and a maximum magnetic permeability of 100 or less is formed of an alloy consisting essentially of, by atom, 5- 30% Ni, 5- 14% Cr, not more than 6% V, and balance of Co and unavoidable impurities. It is preferable for the target to keep a working-strain remaining therein to reduce the maximum magnetic permeability. A method of producing a sputtering target for magnetic recording and reproducing, in which warm working or cold working is applied to the alloy.
摘要:
Provided are a titanium target material which can easily form a film in a narrow and deep contact hole and reduce the generation of PARTICLES. The present invention relates to a titanium target for sputtering, wherein X-ray diffraction intensity ratios on a sputtering plane are (0002)/(1011).gtoreq.0.8, (0002)/(1010).gtoreq.6; a recrystallized structure which has an average crystal grain size of 20 .mu.m or less and in which the proportion of crystal grains in which an acicular structure is present is 20% or less in terms of an area rate is formed.
摘要翻译:提供一种钛靶材料,其可以容易地在窄而深的接触孔中形成膜并减少PARTICLES的产生。 本发明涉及一种溅射用钛靶,溅射面上的X射线衍射强度比为(0002)/(10 + E,ovs 1 + EE 1)> = 0.8,(0002)/(10+ E,ovs 1 + EE 0)> / = 6; 形成平均结晶粒径为20μm以下,其中存在针状结构的晶粒的比例以面积率计为20%以下的再结晶结构。
摘要:
A chromium target is disclosed for use in the formation of chromium films or sheets of reduced thickness by means of sputtering. The target has a recrystallized structure represented by the equation, A/B.ltoreq.0.6, where A is the diffraction intensity of the (110) planes as determined by X-ray diffraction of a sputtered surface, and B is the diffraction intensity as determined from the sum of the (110), (200) and (211) planes. The target preferably has a deflective strength of above 500 MPa and an average crystal grain of below 50 .mu.m. The chromium target is produced by subjecting a starting chromium material to at least one stage of plastic working at a temperature of not higher than 1,000.degree. C., and subsequently by heat-treating the resulting chromium material for recrystallization at a temperature of higher than the recrystallization temperature of the chromium material but not higher than 1,200.degree. C.
摘要翻译:公开了用于通过溅射形成厚度减小的铬膜或铬片的铬靶。 目标具有由等式A / B = 0.6表示的再结晶结构,其中A是通过溅射表面的X射线衍射测定的(110)面的衍射强度,B是衍射强度 由(110),(200)和(211)平面的总和确定。 目标优选具有高于500MPa的偏转强度和低于50μm的平均晶粒。 铬靶是通过使起始铬材料在不高于1000℃的温度下进行塑性加工的至少一个阶段,然后在所述铬靶材的高于 铬材料的重结晶温度不高于1200℃
摘要:
A process for preparing artificial bed blocks for "Shiitake" mushroom cultivation, comprising culturing lumps of spawn (mycelia) in a bottle or other containers, taking out the grown-up mycelia from the container to be kept in a closed space, keeping culturing while raising humidity in the space close to saturation to form a new aerial hypha layer on the whole surface of the lumps of spawn for higher resistance to weed fungi, then sprinkling with water over the lumps in open space to prevent weed fungi from depositing.
摘要:
There is provided a method of making a high-melting metal powder which has high purity and excellent formability and, particularly, of a metal powder of spherical particles made of Ta, Ru, etc. having a higher melting point than iron. There is also provided a target of high-melting metal or its alloy, which is made by the sintering under pressure of these powders and which has high purity and a low oxygen concentration and shows high density and a fine and uniform structure. A powder metal material mainly composed of a high-melting metal material is introduced into a thermal plasma into which hydrogen gas has been introduced, thereby to accomplish refining and spheroidizing. Further, an obtained powder is pressed under pressure by hot isostatic pressing, etc.
摘要:
Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than 3.0%. The invention is also directed to a sputter target material having the same chemical composition as that of the Al alloy film.
摘要:
Provided is a silver alloy film for which good properties of corrosion resistance, heat resistance and adhesiveness are required in thin-film electronic components such as a flat panel display, various semiconductor devices, a thin-film sensor and a magnetic head, a display device having the silver alloy film, and a sputtering-target material for forming the silver alloy film. The silver alloy film consists of, by atomic %, 0.1 to 1.0% Si, 0.1 to 0.7% in total of at least one element selected from the group consisting of Cu, Ti and Ge, and the balance of Ag and unavoidable impurities, wherein a total amount of all the additive elements to Ag is not more than 1.5%.
摘要:
The magnetic encoder of the present invention includes a magnetic signal generating drum having plural magnetic pole lines respectively having different magnetization pitches. Magnetic signals are repeatedly generated from the plural magnetic pole lines. A magnetic sensor is provided which includes plural magnetic resistant effect elements for converting the respective magnetic signals generated from the plural magnetic pole lines into electric signals. The plural magnetic resistant effect elements respectively confront the plural magnetic pole lines and output electric signals of different pulse numbers in accordance with incident magnetic signals. The magnetic signals generated from the plural magnetic poles lines and incident on the magnetic resistant effect elements are less that an anisotropic magnetic field level of the respective magnetic resistant effect elements. As such, respective values and waveform shapes of signals output by each of the magnetic resistant effect elements is substantially the same.
摘要:
Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than 3.0%. The invention is also directed to a sputter target material having the same chemical composition as that of the Al alloy film.
摘要:
There is provided a method of making a high-melting metal powder which has high purity and excellent formability and, particularly, of a metal powder of spherical particles made of Ta, Ru, etc. having a higher melting point than iron. There is also provided a target of high-melting metal or its alloy, which is made by the sintering under pressure of these powders and which has high purity and a low oxygen concentration and shows high density and a fine and uniform structure. A powder metal material mainly composed of a high-melting metal material is introduced into a thermal plasma into which hydrogen gas has been introduced, thereby to accomplish refining and spheroidizing. Further, an obtained powder is pressed under pressure by hot isostatic pressing, etc.