公开(公告)号：US20130206591A1

公开(公告)日：2013-08-15

申请号：US13880865

申请日：2011-11-09

申请人： Hideo Takami ,  Atsushi Nara ,  Shin-ichi Ogino ,  Yuichiro Nakamura

发明人： Hideo Takami ,  Atsushi Nara ,  Shin-ichi Ogino ,  Yuichiro Nakamura

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/101 ,  C22C19/07 ,  C22C38/002 ,  C22C2202/02 ,  C22F1/00 ,  C22F1/16 ,  G11B5/851 ,  H01F41/183 ,  B22F9/04 ,  C22C1/05 ,  B22F3/10

摘要： Provided is a sputtering target for a magnetic recording film containing SiO2, wherein the sputtering target for a magnetic recording film contains B (boron) in an amount of 10 to 1000 wtppm. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, and realizing a stable discharge with a magnetron sputtering device.

摘要翻译： 提供了一种用于含有SiO 2的磁记录膜的溅射靶，其中用于磁记录膜的溅射靶含有10至1000重量ppm的B（硼）。 本发明的目的是获得能够抑制溅射中产生颗粒的目标中形成方英石的磁记录膜的溅射靶，缩短烧结时间，并且用磁控管实现稳定的放电 溅射装置。

公开(公告)号：US08679268B2

公开(公告)日：2014-03-25

申请号：US13320840

申请日：2010-09-30

申请人： Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

发明人： Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

IPC分类号： C23C14/06 ,  C23C14/34 ,  H01F41/18 ,  C22C19/07

CPC分类号： C23C14/3414 ,  B22F2998/00 ,  C22C19/07 ,  C22C32/00 ,  C22C2202/02 ,  H01F41/183 ,  C22C32/0026 ,  B22F9/082

摘要： A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.

摘要翻译： 一种铁磁溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，在所述基体金属（A）中，所述基体金属（A）和含有90重量％以上的Co的平坦相（B），所述相（B）的平均粒径为10μm， 多于150μm以下，相（B）的平均纵横比为1:2〜1:10。 本发明提供能够抑制溅射时的粒子产生的铁磁性溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。

公开(公告)号：US20130306470A1

公开(公告)日：2013-11-21

申请号：US13982051

申请日：2012-03-23

申请人： Shin-ichi Ogino ,  Yuichiro Nakamura

发明人： Shin-ichi Ogino ,  Yuichiro Nakamura

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C22C1/00 ,  C22C1/02 ,  C22C1/0466 ,  C22C1/10 ,  C22C5/04 ,  C22C30/00 ,  C22C33/0228 ,  C22C33/0278 ,  C22C38/002 ,  C22F1/14 ,  C23C14/3414 ,  G11B5/851

摘要： A sputtering target for a magnetic recording film which contains carbon, the sputtering target is characterized in that the ratio (IG/ID) of peak intensities of the G-band to the D-band in Raman scattering spectrometry is 5.0 or less. The sputtering target for a magnetic recording film, which contains carbon powders dispersed therein, makes it possible to produce a magnetic thin film having a granular structure without using an expensive apparatus for co-sputtering; and in particular, the target is an Fe—Pt-based sputtering target. Carbon is a material which is difficult to sinter and has a problem that carbon particles are apt to form agglomerates. There is hence a problem that carbon masses are readily detached during sputtering to generate a large number of particles on the film after sputtering. The high-density sputtering target can solve these problems.

摘要翻译： 作为含有碳的磁记录膜的溅射靶，溅射靶的特征在于，拉曼散射光谱法中的G带与D波段的峰值强度的比（IG / ID）为5.0以下。 包含分散在其中的碳粉末的磁记录膜的溅射靶使得可以制造具有颗粒结构的磁性薄膜而不使用昂贵的共溅射设备; 特别是靶为Fe-Pt系溅射靶。 碳是难以烧结的材料，具有碳粒易于形成附聚物的问题。 因此存在在溅射期间碳质量容易分离以在溅射之后在膜上产生大量颗粒的问题。 高密度溅射靶可以解决这些问题。

公开(公告)号：US20130168240A1

公开(公告)日：2013-07-04

申请号：US13816043

申请日：2011-08-05

申请人： Shin-ichi Ogino ,  Yuichiro Nakamura

发明人： Shin-ichi Ogino ,  Yuichiro Nakamura

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C23C14/14 ,  G11B5/851 ,  H01F1/068 ,  H01F41/183 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3429

摘要： An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.

摘要翻译： 包含金属和金属氧化物的Fe-Pt系铁磁材料溅射靶，其中，所述金属的含量为5摩尔％以上且60摩尔％以下且余量为Fe的组成。 本发明的目的是提供一种铁磁材料溅射靶，其能够形成由诸如Fe-Pt合金的磁相和非磁性相组成的磁记录层以隔离磁相，并且在 其中使用金属氧化物作为非磁性相的材料之一。 本发明提供一种强磁性材料溅射靶，其特征在于，抑制溅射时的金属氧化物的无意的释放以及由于靶内固有地形成的空穴而产生的异常放电而产生的粒子，从而提高了金属氧化物与基体合金之间的粘附性， 其密度增加。

公开(公告)号：US20140001038A1

公开(公告)日：2014-01-02

申请号：US14004227

申请日：2012-04-06

申请人： Shin-ichi Ogino ,  Atsushi Sato ,  Atsutoshi Arakawa ,  Yuichiro Nakamura

发明人： Shin-ichi Ogino ,  Atsushi Sato ,  Atsutoshi Arakawa ,  Yuichiro Nakamura

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C22C19/07 ,  C23C14/35 ,  G11B5/851

摘要： Provided is a nonmagnetic-material-dispersed sputtering target having a metal composition comprising 20 mol % or less of Cr and the balance of Co. The target has a structure including a phase (A) in which a nonmagnetic oxide material is dispersed in the basis metal, and a metal phase (B) containing 40 mol % or more of Co; the area proportion of grains of the nonmagnetic oxide material in the phase (A) is 50% or less; and when a minimum-area rectangle circumscribed to the phase (B) is assumed, the proportion of the circumscribed rectangle having a short side of 2 to 300 μm is 90% or more of all of the phases (B). The ferromagnetic sputtering target can suppress particle generation during sputtering and can improve leakage magnetic flux to allow stable electrical discharge with a magnetron sputtering apparatus.

摘要翻译： 本发明提供一种非磁性材料分散溅射靶，其具有包含20mol％以下的Cr和余量的Co的金属组成物。靶具有包括其中非磁性氧化物材料分散在基材中的相（A）的结构 金属和含有40摩尔％以上的Co的金属相（B） 相（A）中非磁性氧化物材料的面积比例为50％以下; 并且当假设包围相（B）的最小面积矩形时，具有2〜300μm的短边的外接矩形的比例为所有相（B）的90％以上。 铁磁性溅射靶可以抑制溅射时的粒子产生，能够提高漏磁通，能够通过磁控溅射装置进行稳定的放电。

公开(公告)号：US20130112555A1

公开(公告)日：2013-05-09

申请号：US13808938

申请日：2011-01-28

申请人： Shin-ichi Ogino ,  Atsushi SATO ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

发明人： Shin-ichi Ogino ,  Atsushi SATO ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C22C1/0433 ,  C22C19/07 ,  C22C32/0026 ,  C22F1/10 ,  C23C14/3414 ,  G11B5/851 ,  H01F10/16 ,  H01F41/18

摘要： Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.

摘要翻译： 提供一种铁磁材料的溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，所述目标结构体包括作为基础金属的相（A）和具有与相（A）以外的周边构造不同的成分组成的金属相（B），最大范围内的1um以内的氧化物占据的面积比 金属相（B）的外周边为80％以下，金属相（B）的平均粒径为10μm以上且150μm以下。 本发明提供能够抑制溅射时粒子产生的强磁性材料的溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。

公开(公告)号：US20120241317A1

公开(公告)日：2012-09-27

申请号：US13513898

申请日：2010-10-13

申请人： Yuki Ikeda ,  Yuichiro Nakamura ,  Shin-ichi Ogino

发明人： Yuki Ikeda ,  Yuichiro Nakamura ,  Shin-ichi Ogino

IPC分类号： C23C14/08 ,  H01F1/01 ,  C23C14/34

CPC分类号： G11B5/851 ,  C23C14/3414 ,  G11B5/65 ,  H01F10/16 ,  H01F41/183

摘要： A sputtering target comprising an oxide phase is dispersed in Co or a Co alloy phase, wherein the sputtering target is configured from a metal matrix phase containing Co, and a phase containing SiO2 and having an oxide which forms particles and is dispersed in an amount of 6 to 14 mol % (hereinafter referred to as the “oxide phase”), the sputtering target contains, in addition to components configuring the metal matrix phase and the oxide phase, a Cr oxide scattered in or on a surface of the oxide phase in an amount of 0.3 mol % or more and less than 1.0 mol %, and an average area of the respective particles contained in the oxide phase is 2.0 μm2 or less. The provided sputtering target comprising an oxide phase is dispersed in Co or a Co alloy phase can reduce arcing, obtain a stable discharge in a magnetron sputtering device, and reduce the amount of particles that is generated during high density sputtering.

摘要翻译： 包含氧化物相的溅射靶分散在Co或Co合金相中，其中溅射靶由含有Co的金属基体相和含有SiO 2的相构成，并且具有形成颗粒的氧化物并以一定量的 6〜14摩尔％（以下称为“氧化物相”），溅射靶除了构成金属基体相和氧化物相的成分以外还含有分散在氧化物相的表面上或其表面的Cr氧化物 0.3摩尔％以上且小于1.0摩尔％，氧化物相中所含的各粒子的平均面积为2.0μm2以下。 提供的包含氧化物相的溅射靶分散在Co或Co合金相中可以减少电弧，在磁控溅射装置中获得稳定的放电，并且减少在高密度溅射期间产生的颗粒的量。

公开(公告)号：US09328412B2

公开(公告)日：2016-05-03

申请号：US13816043

申请日：2011-08-05

申请人： Shin-ichi Ogino ,  Yuichiro Nakamura

发明人： Shin-ichi Ogino ,  Yuichiro Nakamura

IPC分类号： C23C14/34 ,  G11B5/851 ,  H01F41/18 ,  H01J37/34 ,  H01F1/06 ,  C23C14/14

CPC分类号： C23C14/3414 ,  C23C14/14 ,  G11B5/851 ,  H01F1/068 ,  H01F41/183 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3429

摘要： An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.

摘要翻译： 包含金属和金属氧化物的Fe-Pt系铁磁材料溅射靶，其中，所述金属的含量为5摩尔％以上且60摩尔％以下且余量为Fe的组成。 本发明的目的是提供一种铁磁材料溅射靶，其能够形成由诸如Fe-Pt合金的磁相和非磁性相组成的磁记录层以隔离磁相，并且在 其中使用金属氧化物作为非磁性相的材料之一。 本发明提供一种强磁性材料溅射靶，其特征在于，抑制溅射时的金属氧化物的无意的释放以及由于靶内固有地形成的空穴而产生的异常放电而产生的粒子，从而提高了金属氧化物与基体合金之间的粘附性， 其密度增加。

公开(公告)号：US09181617B2

公开(公告)日：2015-11-10

申请号：US13808938

申请日：2011-01-28

申请人： Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

发明人： Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

IPC分类号： H01F41/18 ,  C23C14/34 ,  C22C1/04 ,  C22C19/07 ,  C22C32/00 ,  C22F1/10 ,  G11B5/851 ,  H01F10/16

CPC分类号： C23C14/3407 ,  C22C1/0433 ,  C22C19/07 ,  C22C32/0026 ,  C22F1/10 ,  C23C14/3414 ,  G11B5/851 ,  H01F10/16 ,  H01F41/18

摘要： Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.

摘要翻译： 提供一种铁磁材料的溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，所述目标结构体包括作为基础金属的相（A）和具有与相（A）以外的周边构造不同的成分组成的金属相（B），最大范围内的氧化物占所述面积比1μm以内 金属相（B）的外周的平均粒径为80％以下，金属相（B）的平均粒径为10μm以上且150μm以下。 本发明提供能够抑制溅射时粒子产生的强磁性材料的溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。

公开(公告)号：US20120097535A1

公开(公告)日：2012-04-26

申请号：US13320840

申请日：2010-09-30

申请人： Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

发明人： Shin-ichi Ogino ,  Atsushi Sato ,  Yuichiro Nakamura ,  Atsutoshi Arakawa

IPC分类号： C23C14/06

CPC分类号： C23C14/3414 ,  B22F2998/00 ,  C22C19/07 ,  C22C32/00 ,  C22C2202/02 ,  H01F41/183 ,  C22C32/0026 ,  B22F9/082

摘要： A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.

摘要翻译： 一种铁磁溅射靶，其包含具有20摩尔％以下的Cr的组成的金属，余量为Co; 其特征在于，在所述基体金属（A）中，所述基体金属（A）和含有90重量％以上的Co的平坦相（B），所述相（B）的平均粒径为10μm， 多于150μm以下，相（B）的平均纵横比为1:2〜1:10。 本发明提供能够抑制溅射时的粒子产生的铁磁性溅射靶，提高通过磁通以通过磁控溅射装置实现稳定的放电。