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公开(公告)号：US5032884A
公开(公告)日：1991-07-16
申请号：US477138
申请日：1990-02-07
申请人： Hideo Yamagishi , Masataka Kondo , Kunio Nishimura , Akihiko Hiroe , Keizou Asaoka , Kazunori Tsuge , Yoshihisa Tawada , Minori Yamaguchi
发明人： Hideo Yamagishi , Masataka Kondo , Kunio Nishimura , Akihiko Hiroe , Keizou Asaoka , Kazunori Tsuge , Yoshihisa Tawada , Minori Yamaguchi
IPC分类号： H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers; characterized in that (1) at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode, (2) an amount of dopant in a p-type or n-type layer is least at a junction interface of p/i or n/i and increases gradually toward a junction interface of p/electrode or n/electrode, or (3) a p-type semiconductor layer being the same conductive type as the p-type semiconductor and having higher impurity density and/or an n-type semiconductor layer being the same conductive type as the n-type semiconductor layer and having higher impurity density is/are interposed between the p-type semiconductor layer and the electrode at the side of the p-type semiconductor layer and/or between the n-type semiconductor layer and the electrode at the side of the n-type semiconductor layer. According to the semiconductor device of the present invention (in the case of (1) or (2)), large Voc and electric current at a specific voltage can be obtained, further in the case of (3), photoelectric conversion efficiency can be improved.
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公开(公告)号：US4926230A
公开(公告)日：1990-05-15
申请号：US377745
申请日：1989-07-10
申请人： Hideo Yamagishi , Minori Yamaguchi , Keizo Asaoka , Akihiko Hiroe , Masataka Kondo , Kazunori Tsuge , Yoshihisa Tawada
发明人： Hideo Yamagishi , Minori Yamaguchi , Keizo Asaoka , Akihiko Hiroe , Masataka Kondo , Kazunori Tsuge , Yoshihisa Tawada
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/075
CPC分类号： H01L31/076 , H01L31/03762 , Y02E10/548
摘要： A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.
摘要翻译： 具有多结的非晶或微晶半导体的光电器件，其中包含高浓度杂质的一层或多层包含在p型导电层和n型导电层之间。 由插入层形成隧道结，以提高光电转换速率。
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公开(公告)号：US5066861A
公开(公告)日：1991-11-19
申请号：US299103
申请日：1989-01-19
申请人： Takehisa Nakayama , Akimine Hayashi , Masataka Kondo , Satoru Murakami , Minori Yamaguchi , Yoshihisa Tawada , Masahiko Hosomi
发明人： Takehisa Nakayama , Akimine Hayashi , Masataka Kondo , Satoru Murakami , Minori Yamaguchi , Yoshihisa Tawada , Masahiko Hosomi
CPC分类号： G01T1/2018
摘要： In an X ray detecting device comprising XL converting unit for converting the X rays into visible light corresponding to the intensity of the X rays and a LE converting unit for converting the visible light into an electrical signal corresponding to the intensity of the visible light, the base layer of the LE converting unit is formed of a material such that the base layer does not substantially absorb the X rays so that the image of the LE converting unit does not appear on the picture of the object.
摘要翻译： 在X射线检测装置中，X射线检测装置包括用于将X射线转换成与X射线的强度对应的可见光的XL转换单元和用于将可见光转换成对应于可见光强度的电信号的LE转换单元， LE转换单元的基层由材料形成，使得基层基本上不吸收X射线，使得LE转换单元的图像不出现在对象的图像上。
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公开(公告)号：US4941032A
公开(公告)日：1990-07-10
申请号：US298279
申请日：1989-01-13
IPC分类号： H01L31/04 , H01L21/28 , H01L29/40 , H01L29/43 , H01L31/0224 , H01L31/0376 , H01L31/075
CPC分类号： H01L31/022425 , H01L31/03762 , H01L31/075 , Y02E10/548
摘要： A semiconductor device comprising an amorphous semiconductor which might contain microcrystal therein, and a metal electrode electrically connected to the amorphous semiconductor and containing Al as a first component; wherein at least one element selected from the group consisting of (i)Ag, (ii)Au, (iii)Ca, Mg, Mn, W, Cr or Cu, (iv)Zn or Ge, and (v)Fe, Mo, Ni, Pd, Pt, Ti, V or Zr is added, as an additional component of the metal electrode, to the first component. According the present invention, there can be prevented the diffusion of an element of a metal electrode into a semiconductor layer during the production and the use of a semiconductor device. Thereby, the degradation of properties of the semiconductor device can be substantially prevented. Further, the yield of products can be improved and the lifetime of products can be greatly lengthened.
摘要翻译： 一种半导体器件，包括可能含有微晶体的非晶半导体和与该非晶半导体电连接并含有Al作为第一成分的金属电极; 其中选自（i）Ag，（ii）Au，（iii）Ca，Mg，Mn，W，Cr或Cu中的至少一种元素，（iv）Zn或Ge，和（v）Fe，Mo 添加Ni，Pd，Pt，Ti，V或Zr作为金属电极的附加成分。 根据本发明，可以防止在半导体器件的制造和使用期间将金属电极的元素扩散到半导体层中。 由此，可以显着地防止半导体器件的性能的劣化。 此外，可以提高产品的产量，并且可以大大延长产品的使用寿命。
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公开(公告)号：US5039852A
公开(公告)日：1991-08-13
申请号：US450701
申请日：1989-12-14
IPC分类号： H01L27/146 , H01L31/0224 , H01L31/0248 , H01L31/09
CPC分类号： H01L31/095 , H01L27/14665 , H01L31/022466
摘要： In the semiconductor image sensor according to the invention in which the photoconductivity of that region of the active layer producing carriers upon exposure to light which is on the light-transmitting electrode side is lower than that of the remaining region, crosstalk can be inhibited without mechanically dividing the semiconductor layer and without causing any significant decrease in sensor sensitivity.
摘要翻译： 在根据本发明的半导体图像传感器中，其中在曝光于透光电极侧的光下产生载流子的该区域的光电导率低于其余区域的光电导率，可以抑制串扰 分割半导体层，而不会导致传感器灵敏度的任何显着降低。
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6.发明授权Semiconductor light beam position sensor element and a position sensor and a picture image input device each using the same 失效半导体光束位置传感器元件和位置传感器以及各自使用的图像输入装置
公开(公告)号：US5025297A
公开(公告)日：1991-06-18
申请号：US320149
申请日：1989-03-07
IPC分类号： G01B11/00 , H01L31/02 , H01L31/0224 , H01L31/0392 , H01L31/105 , H01L31/16
CPC分类号： H01L31/02024 , H01L31/022466 , H01L31/03921 , H01L31/1055 , Y02E10/50
摘要： A transparent semiconductor light beam position sensor element comprises a semiconductor layer consisting of p-, i- and n-type semiconductor layers successively bonded in junction and an electrically conductive layer disposed on either side of the semiconductive layer, at least one of the conductive layers being material transparent material, at least the other conductive layer and the semiconductor layer being provided with a multiplicity of common apertures running in the thickness direction and at least one conductive layer being provided with one pair or two pairs of electrodes of opposite polarities as disposed in its marginal regions. A position sensor utilizing the sensor element comprises a light source capable of varying the position of incidence of light on the position sensor element and a means for detecting the level of light incident on the element and holding the level constant, wherein the point of incidence of light can be identified from the photoelectric current output from one electrode of the electrode pair. A picture image input device utilizing the semiconductor light beam position sensor element further comprises a means for outputting a position signal representative of the point of incidence of light on the sensor element according to the photoelectric current output derived from the electrode pair and a means for outputting a bright dark signal representative of the intensity of light incident on the sensor element after passing or being reflected by an original according to the photoelectric current output derived from the electrode pair.
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公开(公告)号：US06369315B1
公开(公告)日：2002-04-09
申请号：US09454679
申请日：1999-12-03
IPC分类号： H01L2500
摘要： A photovoltaic module comprises a transparent substrate, a plurality of photovoltaic cells formed on the back surface of the substrate, busbars each including a busbar body connected electrically to the photovoltaic cells, an electrical insulating filler covering the photovoltaic cells and the busbar bodies, a spacer, and a cover film covering the filler. Each busbar integrally includes the busbar body and an extension long enough to project from one end of the transparent substrate. The busbar extensions, which serve as output fetching lines, are bent along the spacer, and their respective output end portions are drawn out through the cover film. The output end portions are connected individually to terminals of a terminal box.
摘要翻译： 光伏模块包括透明基板，形成在基板的背面上的多个光伏电池，每个汇流条包括电连接到光伏电池的汇流条主体，覆盖光伏电池和汇流条主体的电绝缘填料，间隔件 和覆盖填料的覆盖膜。 每个母线一体地包括汇流条主体和足够长的延伸部，以从透明基板的一端突出。 用作输出取出线的母线延伸部沿着间隔件弯曲，并且它们各自的输出端部通过覆盖膜被拉出。 输出端部分别连接到接线盒的端子。
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公开(公告)号：US06300556B1
公开(公告)日：2001-10-09
申请号：US09392083
申请日：1999-09-08
IPC分类号： H01L3100
CPC分类号： H01L31/046 , H01L31/0201 , H01L31/0463 , H01L31/048 , Y02E10/50
摘要： A thin film solar cell module which comprises a first electrode layer, a semiconductor layer and a second electrode layer, which are deposited on a substrate and at least part of which is worked to partition these layers into a plurality of cells which are electrically connected with each other and sealed with an encapsulant. At least part of at least one of the first electrode layer, the semiconductor layer and the second electrode layer, which is located at the periphery of the substrate, is removed by mechanical means or by means of laser beam. The periphery of the connected solar cells may be surrounded by a high adhesive strength region.
摘要翻译： 一种薄膜太阳能电池模块，其包括沉积在基板上的第一电极层，半导体层和第二电极层，并且其至少一部分被加工成将这些层分隔成多个电池，其与 彼此密封并用密封剂密封。 位于基板周边的第一电极层，半导体层和第二电极层中的至少一个的至少一部分通过机械装置或借助激光束去除。 连接的太阳能电池的周边可以被高粘合强度区域包围。
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公开(公告)号：US06384315B1
公开(公告)日：2002-05-07
申请号：US09927562
申请日：2001-08-10
IPC分类号： H01L3100
CPC分类号： H01L31/046 , H01L31/0201 , H01L31/0463 , H01L31/048 , Y02E10/50
摘要： A thin film solar cell module which comprises a first electrode layer, a semiconductor layer and a second electrode layer, which are deposited on a substrate and at least part of which is worked to partition these layers into a plurality of cells which are electrically connected with each other and sealed with an encapsulant. At least part of at least one of the first electrode layer, the semiconductor layer and the second electrode layer, which is located at the periphery of the substrate, is removed by mechanical means or by means of laser beam. The periphery of the connected solar cells may be surrounded by a high adhesive strength region.
摘要翻译： 一种薄膜太阳能电池模块，其包括沉积在基板上的第一电极层，半导体层和第二电极层，并且其至少一部分被加工成将这些层分隔成多个电池，其与 彼此密封并用密封剂密封。 位于基板周边的第一电极层，半导体层和第二电极层中的至少一个的至少一部分通过机械装置或借助激光束去除。 连接的太阳能电池的周边可以被高粘合强度区域包围。
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公开(公告)号：US5828117A
公开(公告)日：1998-10-27
申请号：US859687
申请日：1997-05-21
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/052 , H01L31/075 , H01L31/18 , H01L31/105 , H01L31/117
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/0392 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： The invention provides two kinds of structures for a thin-film solar cell that is improved in the adhesive strength and reflectance of a back surface electrode layer. According to the first structure, in a thin-film solar cell in which a transparent electrode layer, a thin-film semiconductor layer, and a back surface electrode layer are laid in stated order on an insulative transparent substrate, the back surface electrode layer consists of a first transparent conductive metal compound layer having a smaller refractive index than a semiconductor that constitutes the thin-film semiconductor layer, a second transparent conductive metal compound layer, and a metal layer. The second transparent conductive metal compound layer contains at least one of components of the first transparent conductive metal compound layer and a component of the metal layer. According to the second structure, in a thin-film solar cell in which a transparent electrode layer, a thin-film semiconductor layer, and a back surface electrode layer are laid in order on an insulative transparent substrate, the back surface electrode layer is a layered body consisting of a silver thin film, and an intermediate thin layer containing silver, oxygen, and a metal element constituting a transparent conductive metal oxide.
摘要翻译： 本发明提供两种用于提高背面电极层的粘合强度和反射率的薄膜太阳能电池的结构。 根据第一结构，在透明电极层，薄膜半导体层和背面电极层以绝缘性的透明基板依次配置的薄膜太阳能电池中，背面电极层由 具有比构成薄膜半导体层的半导体的折射率小的第一透明导电金属化合物层，第二透明导电金属化合物层和金属层。 第二透明导电金属化合物层包含第一透明导电金属化合物层和金属层的成分中的至少一种。 根据第二结构，在绝缘性透明基板上依次层叠透明电极层，薄膜半导体层和背面电极层的薄膜太阳能电池中，背面电极层为 由银薄膜构成的层状体，以及含有银，氧，构成透明导电性金属氧化物的金属元素的中间薄层。
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