公开(公告)号：US5032884A

公开(公告)日：1991-07-16

申请号：US477138

申请日：1990-02-07

申请人： Hideo Yamagishi ,  Masataka Kondo ,  Kunio Nishimura ,  Akihiko Hiroe ,  Keizou Asaoka ,  Kazunori Tsuge ,  Yoshihisa Tawada ,  Minori Yamaguchi

发明人： Hideo Yamagishi ,  Masataka Kondo ,  Kunio Nishimura ,  Akihiko Hiroe ,  Keizou Asaoka ,  Kazunori Tsuge ,  Yoshihisa Tawada ,  Minori Yamaguchi

IPC分类号： H01L31/075 ,  H01L31/20

CPC分类号： H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers; characterized in that (1) at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode, (2) an amount of dopant in a p-type or n-type layer is least at a junction interface of p/i or n/i and increases gradually toward a junction interface of p/electrode or n/electrode, or (3) a p-type semiconductor layer being the same conductive type as the p-type semiconductor and having higher impurity density and/or an n-type semiconductor layer being the same conductive type as the n-type semiconductor layer and having higher impurity density is/are interposed between the p-type semiconductor layer and the electrode at the side of the p-type semiconductor layer and/or between the n-type semiconductor layer and the electrode at the side of the n-type semiconductor layer. According to the semiconductor device of the present invention (in the case of (1) or (2)), large Voc and electric current at a specific voltage can be obtained, further in the case of (3), photoelectric conversion efficiency can be improved.

公开(公告)号：US4926230A

公开(公告)日：1990-05-15

申请号：US377745

申请日：1989-07-10

申请人： Hideo Yamagishi ,  Minori Yamaguchi ,  Keizo Asaoka ,  Akihiko Hiroe ,  Masataka Kondo ,  Kazunori Tsuge ,  Yoshihisa Tawada

发明人： Hideo Yamagishi ,  Minori Yamaguchi ,  Keizo Asaoka ,  Akihiko Hiroe ,  Masataka Kondo ,  Kazunori Tsuge ,  Yoshihisa Tawada

IPC分类号： H01L31/04 ,  H01L31/0376 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/03762 ,  Y02E10/548

摘要： A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.

摘要翻译： 具有多结的非晶或微晶半导体的光电器件，其中包含高浓度杂质的一层或多层包含在p型导电层和n型导电层之间。 由插入层形成隧道结，以提高光电转换速率。

公开(公告)号：US5264710A

公开(公告)日：1993-11-23

申请号：US864944

申请日：1992-04-07

申请人： Hideo Yamagishi ,  Akihiko Hiroe ,  Hitoshi Nishio ,  Keiko Miki ,  Kazunori Tsuge ,  Yoshihisa Tawada

发明人： Hideo Yamagishi ,  Akihiko Hiroe ,  Hitoshi Nishio ,  Keiko Miki ,  Kazunori Tsuge ,  Yoshihisa Tawada

IPC分类号： H01L21/205 ,  H01L21/30 ,  H01L31/20 ,  H01L45/00

CPC分类号： H01L31/202 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/3003 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521

摘要： Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm.sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.

摘要翻译： 在形成薄膜期间或之后，将非晶半导体薄膜暴露于氢自由基的气氛中，或者在形成时在300-700nm的波长下进行密度不小于10W / cm 2的光照射 薄膜。 获得的薄膜具有改善的，即较小的光劣化。 使用上述薄膜的半导体器件优选地应用于太阳能电池或薄膜晶体管。

公开(公告)号：US5015838A

公开(公告)日：1991-05-14

申请号：US294625

申请日：1989-01-27

申请人： Hideo Yamagishi ,  Akihiko Hiroe ,  Hitoshi Nishio ,  Satoru Murakami ,  Keiko Miki ,  Minori Yamaguchi ,  Seishiro Mizukami ,  Yoshihisa Tawada

发明人： Hideo Yamagishi ,  Akihiko Hiroe ,  Hitoshi Nishio ,  Satoru Murakami ,  Keiko Miki ,  Minori Yamaguchi ,  Seishiro Mizukami ,  Yoshihisa Tawada

IPC分类号： G01J3/50 ,  H01L27/14 ,  H01L31/075 ,  H01L31/10 ,  H01L31/101

CPC分类号： H01L31/076 ,  H01L31/101 ,  Y02E10/548

摘要： A color sensor of the present invention is a semiconductor element comprising a semiconductor wherein a plurality of pn or pin junctions are laminated, and conductive layers which are laminated on both surfaces of the semiconductor, characterized in that the semiconductor element is arranged in a way that the quantity of production of photocarriers is increased in order from the light incident side for the whole wave length band to be measured, and that value of current is detected by changing voltage between both conductivity layers. According to the color sensor of the present invention, the construction can be simplified, it is easily integrated and large-scaled, manufacturing process can be simplified, and the yield of color sensors increases, so that there can be realized a color sensor with low cost.

公开(公告)号：US4965225A

公开(公告)日：1990-10-23

申请号：US413916

申请日：1989-09-28

申请人： Hideo Yamagishi ,  William A. Nevin ,  Hitoshi Nishio ,  Keiko Miki ,  Kazunori Tsuge ,  Yoshihisa Tawada

发明人： Hideo Yamagishi ,  William A. Nevin ,  Hitoshi Nishio ,  Keiko Miki ,  Kazunori Tsuge ,  Yoshihisa Tawada

IPC分类号： H01L31/0376 ,  H01L31/20

CPC分类号： H01L31/03767 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.

公开(公告)号：US5507880A

公开(公告)日：1996-04-16

申请号：US322524

申请日：1994-10-14

申请人： Atsuo Ishikawa ,  Toshihito Endo ,  Hideo Yamagishi ,  Yoshihisa Tawada

发明人： Atsuo Ishikawa ,  Toshihito Endo ,  Hideo Yamagishi ,  Yoshihisa Tawada

IPC分类号： H01L31/0216 ,  H01L31/048

CPC分类号： H01L31/02167 ,  B32B17/10018 ,  B32B17/10091 ,  B32B17/10174 ,  H01L31/048 ,  Y02E10/50

摘要： A solar module made by the sequential stacking of a conducting metal oxide layer, an amorphous semiconductor layer, a back metal electrode, and a passivating resin layer on a transparent substrate, in which the passivating resin layer includes a water vapor barrier layer having a permeability to water vapor of not more than 1 g/m.sup.2 day measured at a thickness of 100 .mu.m, with the water vapor barrier layer being a polymer having a backbone consisting essentially of carbon and hydrogen. This barrier layer prevents the oxidation of the back metal electrode by water vapor, so that the stability of the module is improved in outdoor use.

摘要翻译： 一种太阳能模块，其通过在透明基板上顺序堆叠导电金属氧化物层，非晶半导体层，背面金属电极和钝化树脂层而制成，其中钝化树脂层包括具有渗透性的水蒸气阻隔层 以厚度为100μm测量的不大于1g / m 2天的水蒸汽，其中水蒸气阻隔层是具有主要由碳和氢组成的骨架的聚合物。 该阻挡层通过水蒸汽防止背面金属电极的氧化，从而在户外使用中提高了模块的稳定性。

公开(公告)号：US4634601A

公开(公告)日：1987-01-06

申请号：US716302

申请日：1985-03-26

申请人： Yoshihiro Hamakawa ,  Hideo Yamagishi ,  Yoshihisa Tawada

发明人： Yoshihiro Hamakawa ,  Hideo Yamagishi ,  Yoshihisa Tawada

IPC分类号： H01L31/04 ,  C23C16/24 ,  C23C16/509 ,  H01L21/205 ,  B05D3/06 ,  B05D5/12

CPC分类号： C23C16/24 ,  C23C16/509 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262

摘要： The production of a semiconductor by the glow discharge decomposition of a silane type gas is accomplished advantageously by a method which comprises effecting the glow discharge decomposition of introduced silane type gas with a plurality of opposed electrodes disposed substantially perpendicularly to a substrate and insulated from the ground potential and subsequently allowing the product of the decomposition to be deposited on the substrate disposed so as to be exposed to the introduced silane type gas. The semiconductor obtained by this method is free from the drawbacks suffered by the conventional method using a power source of high frequency.

摘要翻译： 通过硅烷型气体的辉光放电分解来制造半导体有利地通过一种方法实现，该方法包括：引入硅烷型气体的辉光放电分解与基本上垂直于基板设置并与地绝缘的多个相对电极 并且随后允许分解产物沉积在被设置为暴露于引入的硅烷型气体的基板上。 通过该方法获得的半导体没有使用高频电源的常规方法所遭受的缺陷。

公开(公告)号：US06300556B1

公开(公告)日：2001-10-09

申请号：US09392083

申请日：1999-09-08

申请人： Hideo Yamagishi ,  Toshihide Ohkatsu ,  Masataka Kondo

发明人： Hideo Yamagishi ,  Toshihide Ohkatsu ,  Masataka Kondo

IPC分类号： H01L3100

CPC分类号： H01L31/046 ,  H01L31/0201 ,  H01L31/0463 ,  H01L31/048 ,  Y02E10/50

摘要： A thin film solar cell module which comprises a first electrode layer, a semiconductor layer and a second electrode layer, which are deposited on a substrate and at least part of which is worked to partition these layers into a plurality of cells which are electrically connected with each other and sealed with an encapsulant. At least part of at least one of the first electrode layer, the semiconductor layer and the second electrode layer, which is located at the periphery of the substrate, is removed by mechanical means or by means of laser beam. The periphery of the connected solar cells may be surrounded by a high adhesive strength region.

摘要翻译： 一种薄膜太阳能电池模块，其包括沉积在基板上的第一电极层，半导体层和第二电极层，并且其至少一部分被加工成将这些层分隔成多个电池，其与 彼此密封并用密封剂密封。 位于基板周边的第一电极层，半导体层和第二电极层中的至少一个的至少一部分通过机械装置或借助激光束去除。 连接的太阳能电池的周边可以被高粘合强度区域包围。

公开(公告)号：US06369315B1

公开(公告)日：2002-04-09

申请号：US09454679

申请日：1999-12-03

申请人： Seishiro Mizukami ,  Hideo Yamagishi ,  Yuzuru Kondoh ,  Masataka Kondo

发明人： Seishiro Mizukami ,  Hideo Yamagishi ,  Yuzuru Kondoh ,  Masataka Kondo

IPC分类号： H01L2500

CPC分类号： H02S40/34 ,  H02S20/25 ,  Y02B10/12

摘要： A photovoltaic module comprises a transparent substrate, a plurality of photovoltaic cells formed on the back surface of the substrate, busbars each including a busbar body connected electrically to the photovoltaic cells, an electrical insulating filler covering the photovoltaic cells and the busbar bodies, a spacer, and a cover film covering the filler. Each busbar integrally includes the busbar body and an extension long enough to project from one end of the transparent substrate. The busbar extensions, which serve as output fetching lines, are bent along the spacer, and their respective output end portions are drawn out through the cover film. The output end portions are connected individually to terminals of a terminal box.

摘要翻译： 光伏模块包括透明基板，形成在基板的背面上的多个光伏电池，每个汇流条包括电连接到光伏电池的汇流条主体，覆盖光伏电池和汇流条主体的电绝缘填料，间隔件 和覆盖填料的覆盖膜。 每个母线一体地包括汇流条主体和足够长的延伸部，以从透明基板的一端突出。 用作输出取出线的母线延伸部沿着间隔件弯曲，并且它们各自的输出端部通过覆盖膜被拉出。 输出端部分别连接到接线盒的端子。

公开(公告)号：US06506260B1

公开(公告)日：2003-01-14

申请号：US09532197

申请日：2000-03-22

申请人： Masafumi Hiraishi ,  Masataka Kondo ,  Hideo Yamagishi ,  Katsuhiko Hayashi ,  Toshihide Okatsu

发明人： Masafumi Hiraishi ,  Masataka Kondo ,  Hideo Yamagishi ,  Katsuhiko Hayashi ,  Toshihide Okatsu

IPC分类号： B08B302

CPC分类号： H01L21/67057 ,  H01L21/67046 ,  H01L21/67051 ,  H01L31/0463 ,  Y02E10/50 ,  Y10S134/902

摘要： A method for cleaning a photovoltaic module, the photovoltaic module having a first electrode layer formed on an insulating substrate, a photovoltaic layer, and a second electrode layer. The laminate is electrically divided between a power generating region and peripheral regions by means of grooves. The power generating region is divided into a plurality of photovoltaic cells by means of laser-scribed grooves. At least some of the photovoltaic cells are connected electrically in series with one another. The cleaning method includes a process for transporting the photovoltaic module immersed in a cleaning fluid, while being kept in a horizontal position with the laminate upward as it is transported, and applying ultrasonic vibration to the cleaning fluid, thereby removing particles in the scribed grooves.

摘要翻译： 一种用于清洁光伏模块的方法，所述光伏模块具有形成在绝缘基板上的第一电极层，光电转换层和第二电极层。 层叠体通过凹槽在发电区域和周边区域之间电分配。 发电区域通过激光刻划的槽分成多个光伏电池。 至少一些光伏电池彼此串联电连接。 该清洁方法包括一种将浸入清洗液中的光伏组件输送的方法，同时保持水平位置，同时层压体在输送过程中向上，并对清洗液施加超声波振动，从而去除划线槽中的微粒。