公开(公告)号：US5066861A

公开(公告)日：1991-11-19

申请号：US299103

申请日：1989-01-19

申请人： Takehisa Nakayama ,  Akimine Hayashi ,  Masataka Kondo ,  Satoru Murakami ,  Minori Yamaguchi ,  Yoshihisa Tawada ,  Masahiko Hosomi

发明人： Takehisa Nakayama ,  Akimine Hayashi ,  Masataka Kondo ,  Satoru Murakami ,  Minori Yamaguchi ,  Yoshihisa Tawada ,  Masahiko Hosomi

IPC分类号： G01T1/20 ,  G01T1/24

CPC分类号： G01T1/2018

摘要： In an X ray detecting device comprising XL converting unit for converting the X rays into visible light corresponding to the intensity of the X rays and a LE converting unit for converting the visible light into an electrical signal corresponding to the intensity of the visible light, the base layer of the LE converting unit is formed of a material such that the base layer does not substantially absorb the X rays so that the image of the LE converting unit does not appear on the picture of the object.

摘要翻译： 在X射线检测装置中，X射线检测装置包括用于将X射线转换成与X射线的强度对应的可见光的XL转换单元和用于将可见光转换成对应于可见光强度的电信号的LE转换单元， LE转换单元的基层由材料形成，使得基层基本上不吸收X射线，使得LE转换单元的图像不出现在对象的图像上。

公开(公告)号：US5039852A

公开(公告)日：1991-08-13

申请号：US450701

申请日：1989-12-14

申请人： Masataka Kondo ,  Minori Yamaguchi ,  Yoshihisa Tawada

发明人： Masataka Kondo ,  Minori Yamaguchi ,  Yoshihisa Tawada

IPC分类号： H01L27/146 ,  H01L31/0224 ,  H01L31/0248 ,  H01L31/09

CPC分类号： H01L31/095 ,  H01L27/14665 ,  H01L31/022466

摘要： In the semiconductor image sensor according to the invention in which the photoconductivity of that region of the active layer producing carriers upon exposure to light which is on the light-transmitting electrode side is lower than that of the remaining region, crosstalk can be inhibited without mechanically dividing the semiconductor layer and without causing any significant decrease in sensor sensitivity.

摘要翻译： 在根据本发明的半导体图像传感器中，其中在曝光于透光电极侧的光下产生载流子的该区域的光电导率低于其余区域的光电导率，可以抑制串扰 分割半导体层，而不会导致传感器灵敏度的任何显着降低。

公开(公告)号：US5025297A

公开(公告)日：1991-06-18

申请号：US320149

申请日：1989-03-07

申请人： Satoru Murakami ,  Minori Yamaguchi ,  Akimine Hayashi ,  Masataka Kondo ,  Yoshihisa Tawada

发明人： Satoru Murakami ,  Minori Yamaguchi ,  Akimine Hayashi ,  Masataka Kondo ,  Yoshihisa Tawada

IPC分类号： G01B11/00 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/105 ,  H01L31/16

CPC分类号： H01L31/02024 ,  H01L31/022466 ,  H01L31/03921 ,  H01L31/1055 ,  Y02E10/50

摘要： A transparent semiconductor light beam position sensor element comprises a semiconductor layer consisting of p-, i- and n-type semiconductor layers successively bonded in junction and an electrically conductive layer disposed on either side of the semiconductive layer, at least one of the conductive layers being material transparent material, at least the other conductive layer and the semiconductor layer being provided with a multiplicity of common apertures running in the thickness direction and at least one conductive layer being provided with one pair or two pairs of electrodes of opposite polarities as disposed in its marginal regions. A position sensor utilizing the sensor element comprises a light source capable of varying the position of incidence of light on the position sensor element and a means for detecting the level of light incident on the element and holding the level constant, wherein the point of incidence of light can be identified from the photoelectric current output from one electrode of the electrode pair. A picture image input device utilizing the semiconductor light beam position sensor element further comprises a means for outputting a position signal representative of the point of incidence of light on the sensor element according to the photoelectric current output derived from the electrode pair and a means for outputting a bright dark signal representative of the intensity of light incident on the sensor element after passing or being reflected by an original according to the photoelectric current output derived from the electrode pair.

公开(公告)号：US5032884A

公开(公告)日：1991-07-16

申请号：US477138

申请日：1990-02-07

申请人： Hideo Yamagishi ,  Masataka Kondo ,  Kunio Nishimura ,  Akihiko Hiroe ,  Keizou Asaoka ,  Kazunori Tsuge ,  Yoshihisa Tawada ,  Minori Yamaguchi

发明人： Hideo Yamagishi ,  Masataka Kondo ,  Kunio Nishimura ,  Akihiko Hiroe ,  Keizou Asaoka ,  Kazunori Tsuge ,  Yoshihisa Tawada ,  Minori Yamaguchi

IPC分类号： H01L31/075 ,  H01L31/20

CPC分类号： H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers; characterized in that (1) at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode, (2) an amount of dopant in a p-type or n-type layer is least at a junction interface of p/i or n/i and increases gradually toward a junction interface of p/electrode or n/electrode, or (3) a p-type semiconductor layer being the same conductive type as the p-type semiconductor and having higher impurity density and/or an n-type semiconductor layer being the same conductive type as the n-type semiconductor layer and having higher impurity density is/are interposed between the p-type semiconductor layer and the electrode at the side of the p-type semiconductor layer and/or between the n-type semiconductor layer and the electrode at the side of the n-type semiconductor layer. According to the semiconductor device of the present invention (in the case of (1) or (2)), large Voc and electric current at a specific voltage can be obtained, further in the case of (3), photoelectric conversion efficiency can be improved.

公开(公告)号：US4926230A

公开(公告)日：1990-05-15

申请号：US377745

申请日：1989-07-10

申请人： Hideo Yamagishi ,  Minori Yamaguchi ,  Keizo Asaoka ,  Akihiko Hiroe ,  Masataka Kondo ,  Kazunori Tsuge ,  Yoshihisa Tawada

发明人： Hideo Yamagishi ,  Minori Yamaguchi ,  Keizo Asaoka ,  Akihiko Hiroe ,  Masataka Kondo ,  Kazunori Tsuge ,  Yoshihisa Tawada

IPC分类号： H01L31/04 ,  H01L31/0376 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/03762 ,  Y02E10/548

摘要： A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.

摘要翻译： 具有多结的非晶或微晶半导体的光电器件，其中包含高浓度杂质的一层或多层包含在p型导电层和n型导电层之间。 由插入层形成隧道结，以提高光电转换速率。

公开(公告)号：US5128736A

公开(公告)日：1992-07-07

申请号：US649294

申请日：1991-01-30

申请人： Eiichi Yoshida ,  Tomoyoshi Zenki ,  Satoru Murakami ,  Minori Yamaguchi ,  Takehisa Nakayama ,  Yoshihisa Tawada

发明人： Eiichi Yoshida ,  Tomoyoshi Zenki ,  Satoru Murakami ,  Minori Yamaguchi ,  Takehisa Nakayama ,  Yoshihisa Tawada

IPC分类号： H01L31/0248 ,  H01L27/144 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/12 ,  H01L31/16

CPC分类号： H01L31/035281 ,  H01L27/1443 ,  H01L31/161 ,  Y02E10/50

摘要： In a light sensitive semiconductor unit having a plurality of light sensitive semiconductor cells connected in series, the light receiving area or size of the light sensitive semiconductor cells is increased as the distance from the center of the unit increases so that every light sensitive semiconductor cell can generate generally equal short circuit current even if the light intensity is decreased as the distance between the light sensitive semiconductor cell and light source increases, whereby a high operating voltage can be obtained.

摘要翻译： 在具有串联连接的多个光敏半导体单元的光敏半导体单元中，随着距离单元中心的距离增加，光敏半导体单元的光接收面积或尺寸增加，使得每个光敏半导体单元可以 即使当光敏半导体单元和光源之间的距离增加时光强度减小，也产生大致相等的短路电流，从而可以获得高的工作电压。

公开(公告)号：US5015838A

公开(公告)日：1991-05-14

申请号：US294625

申请日：1989-01-27

申请人： Hideo Yamagishi ,  Akihiko Hiroe ,  Hitoshi Nishio ,  Satoru Murakami ,  Keiko Miki ,  Minori Yamaguchi ,  Seishiro Mizukami ,  Yoshihisa Tawada

发明人： Hideo Yamagishi ,  Akihiko Hiroe ,  Hitoshi Nishio ,  Satoru Murakami ,  Keiko Miki ,  Minori Yamaguchi ,  Seishiro Mizukami ,  Yoshihisa Tawada

IPC分类号： G01J3/50 ,  H01L27/14 ,  H01L31/075 ,  H01L31/10 ,  H01L31/101

CPC分类号： H01L31/076 ,  H01L31/101 ,  Y02E10/548

摘要： A color sensor of the present invention is a semiconductor element comprising a semiconductor wherein a plurality of pn or pin junctions are laminated, and conductive layers which are laminated on both surfaces of the semiconductor, characterized in that the semiconductor element is arranged in a way that the quantity of production of photocarriers is increased in order from the light incident side for the whole wave length band to be measured, and that value of current is detected by changing voltage between both conductivity layers. According to the color sensor of the present invention, the construction can be simplified, it is easily integrated and large-scaled, manufacturing process can be simplified, and the yield of color sensors increases, so that there can be realized a color sensor with low cost.

公开(公告)号：US4937550A

公开(公告)日：1990-06-26

申请号：US295969

申请日：1989-01-27

申请人： Yoshihisa Tawada ,  Minori Yamaguchi ,  Yoichi Hosokawa ,  Tomoyoshi Zenki

发明人： Yoshihisa Tawada ,  Minori Yamaguchi ,  Yoichi Hosokawa ,  Tomoyoshi Zenki

IPC分类号： G01L1/22

CPC分类号： G01L1/2293

摘要： The present invention relates to a strain sensor, particularly a strain sensor which detects a mechanical strain using the electric resistance change of a non-single crystalline semiconductor which is proportional to mechanical strain. The strain sensor in the present invention consists of a non-single crystalline semiconductor containing Si wherein the activation energy determined from the temperature dependency of the dark conductivity is under 15 meV. The strain sensor particularly suits an application to a mechanical strain measurement under a comparatively strong magnetic field.

摘要翻译： PCT No.PCT / JP88 / 00320 Sec。 371日期1989年1月27日第 102（e）日本1989年1月27日PCT申请日1988年3月30日PCT应用传感器技术领域本发明涉及一种应变传感器，特别涉及一种使用非单晶半导体的电阻变化来检测机械应变的应变传感器， 与机械应变成比例。 本发明的应变传感器由包含Si的非单晶半导体组成，其中根据暗电导率的温度依赖性确定的活化能低于15meV。 应变传感器特别适用于在较强磁场下的机械应变测量。

公开(公告)号：US4765845A

公开(公告)日：1988-08-23

申请号：US942644

申请日：1986-12-17

申请人： Jun Takada ,  Minori Yamaguchi ,  Yoshihisa Tawada

发明人： Jun Takada ,  Minori Yamaguchi ,  Yoshihisa Tawada

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/06

CPC分类号： H01L31/022425 ,  H01L31/075 ,  Y02E10/548

摘要： A heat-resistant thin film photoelectric converter, comprising a semiconductor layer, a front transparent electrode, a rear metal electrode, and a diffusion-blocking layer, said diffusion-blocking layer being provided between the semiconductor layer and the rear metal electrode and being a layer of metal silicide having a thickness of 5 .ANG. to 200 .ANG..The converter of the present invention can avoid the reduction in the efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.

摘要翻译： 一种耐热薄膜光电转换器，包括半导体层，前透明电极，后金属电极和扩散阻挡层，所述扩散阻挡层设置在半导体层和后金属电极之间， 金属硅化物层，其厚度为5安培至200安培。 本发明的转换器可以避免由于金属或金属化合物从电极扩散到半导体中而降低效率。

公开(公告)号：US5126815A

公开(公告)日：1992-06-30

申请号：US609284

申请日：1990-11-05

申请人： Satoru Murakami ,  Minori Yamaguchi ,  Akimine Hayashi ,  Masataka Konda ,  Yoshihisa Tawada

发明人： Satoru Murakami ,  Minori Yamaguchi ,  Akimine Hayashi ,  Masataka Konda ,  Yoshihisa Tawada

IPC分类号： G01B11/00 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/105 ,  H01L31/16

CPC分类号： H01L31/02024 ,  H01L31/022466 ,  H01L31/03921 ,  H01L31/1055 ,  Y02E10/50

摘要： A semiconductor light beam position sensor element comprises a semiconductor layer of successively formed p-, i- and n-type semiconductor layers and an electrically conductive layer on either side of the semiconductive layer. At least one of the conductive layers is made of a transparent material, and at least the other conductive layer and the semiconductor layer are provided with a plurality of common apertures extending in the thickness direction. At least one of the conductor layers is provided with one or two pairs of electrodes of opposite polarity and positioned in its marginal regions. The sensor element is light transparent. A feedback circuit is provided to insure that the incident light is constant.

摘要翻译： 半导体光束位置传感器元件包括连续形成的p型，i型和n型半导体层的半导体层和在半导体层的任一侧上的导电层。 至少一个导电层由透明材料制成，并且至少另一导电层和半导体层设置有沿厚度方向延伸的多个公共孔。 至少一个导体层设置有一对或两对相反极性的电极，并位于其边缘区域。 传感器元件透明。 提供反馈电路以确保入射光是恒定的。