摘要:
A power supply apparatus which supplies power to an amplifier, includes: a regulator stabilizing a voltage of the power supplied to the amplifier; and a stabilizing controller obtaining an amplitude level of an input signal inputted to the amplifier and controlling a stability of the voltage by the regulator based on the amplitude level.
摘要:
A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.
摘要:
After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.
摘要:
After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.
摘要:
A sensor device which detects a positional relationship between an first member and second member, includes a signal source generating an electrical signal, a first electrode receiving the electrical signal and storing an electrical charge at a first part on the first member, a second electrode inducing an electrical charge at the second part on the second member, a third electrode inducing an electrical charge at the third part on the second member, a fourth electrode inducing an electrical charge at the fourth part on the first member, a reference electrode disposed at a fifth part on the second member to be connected to a reference voltage point, a fifth electrode inducing an electrical charge at the sixth part on the first member, and a differential amplifier amplifying a voltage difference between the fourth electrode and the fifth electrode and outputting a difference signal.
摘要:
A sensor device according to an embodiment of the present invention includes an electrode array having plural electrodes arranged in an array manner, a signal generator configured to generate a first signal having a first frequency, and apply the first signal to the plural electrodes, and a detection unit configured to, when the first signal is applied to the plural electrodes, and a second signal having a second frequency is applied to an object to be detected, detect a distance between each electrode included in the electrode array and the surface of the object, using an interference wave between the first signal applied to each electrode and the second signal applied to the object, or detect irregularities on the surface of the object, using a signal generated by using the interference wave outputted from one electrode and the interference wave outputted from another electrode.
摘要:
A sensor device for detecting a positional relationship between a first member and a second member, includes a first electrode provided on a surface of the first member and supplied with an alternating signal of a first frequency, a second electrode provided on a surface of the second member and supplied with an alternating signal of a second frequency, and a beat detector which detects a beat frequency component corresponding to a difference between the first and second frequencies indicative of the positional relationship between the first member and the second member, when the positional relationship between the first and second members changes to cause the first electrode to approach the second electrode.
摘要:
A sensor device according to an embodiment of the present invention includes an electrode array having plural electrodes arranged in an array manner, a signal generator configured to generate a first signal having a first frequency, and apply the first signal to the plural electrodes, and a detection unit configured to, when the first signal is applied to the plural electrodes, and a second signal having a second frequency is applied to an object to be detected, detect a distance between each electrode included in the electrode array and the surface of the object, using an interference wave between the first signal applied to each electrode and the second signal applied to the object, or detect irregularities on the surface of the object, using a signal generated by using the interference wave outputted from one electrode and the interference wave outputted from another electrode.
摘要:
A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere.
摘要:
It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.