摘要:
A clutch disc assembly is provided with a support structure and friction generating members that provide generally constant friction generation, even when misalignment occurs between adjacent members. The clutch disc assembly 1 includes a hub 2, a fourth friction washer 19, a clutch plate 3 and a second coil spring 7. The fourth friction washer 19 is fixed to the hub 2 and has a tapered surface 19a. The clutch plate 3 has an inner peripheral edge tapered portion 3c which is abutted against the tapered surface 19a and disposed on the outer periphery of the hub 2. The second coil spring 7 couples the hub 2 to the clutch plate 3 in a circumferential direction.
摘要:
A torsion damper for a clutch disc is disposed in window holes provided in power input and output rotating elements of the clutch disc, for elastically coupling the power input and output rotating elements in a direction of their rotation. The torsion damper includes a pair of seat elements 11 and a rubber element 12 therebetween. In one embodiment, the rubber element 12 is positioned between both the seat elements 11 and is capable of expanding and contracting. The rubber element includes a projection 20 and a through-hole 16 is provided in each of the seat elements 11.
摘要:
A torsion damper for a clutch disc is disposed in window holes provided in power input and output rotating elements of the clutch disc, for elastically coupling the power input and output rotating elements in a direction of their rotation. The torsion damper includes a pair of seat elements (11) and a rubber element (12) therebetween. In one embodiment, the rubber element (12) is positioned between both the seat elements (11) and is capable of expanding and contracting. The rubber element includes a projection (20) and a through-hole (16) is provided in each of the seat elements (11).
摘要:
A torsion damper for a clutch disc is disposed in window holes provided in power input and output rotating elements of the clutch disc, for elastically coupling the power input and output rotating elements in a direction of their rotation. The torsion damper includes a pair of seat elements (11) and a rubber element (12) therebetween. In one embodiment, the rubber element (12) is positioned between both the seat elements (11) and is capable of expanding and contracting. The rubber element includes a projection (20) and a through-hole (16) is provided in each of the seat elements (11).
摘要:
A clutch disc assembly is provided with a support structure and friction generating members that provide generally constant friction generation, even when misalignment occurs between adjacent members. The clutch disc assembly 1 includes a hub 2, a fourth friction washer 19, a clutch plate 3 and a second coil spring 7. The fourth friction washer 19 is fixed to the hub 2 and has a tapered surface 19a. The clutch plate 3 has an inner peripheral edge tapered portion 3c which is abutted against the tapered surface 19a and disposed on the outer periphery of the hub 2. The second coil spring 7 couples the hub 2 to the clutch plate 3 in a circumferential direction.
摘要:
In a clutch cover assembly including a diaphragm spring and a coned disc spring, circumferential plural places of the coned disc spring are secured to projecting portions provided on a clutch cover in such a manner as leaving no play at least in a circumferential or axial direction. Since there is no clearance between secured portions of the coned disc spring and projecting portions of the clutch cover, the coned disc spring can be prevented from emitting abnormal sound due to its axial or circumferential vibration.
摘要:
A frictionally engaging clutch disc assembly includes portions which define alignment holes which are employed during assembly of the clutch disc assembly. A tooling jig having alignment pins are engaged in the alignment holes such that the various portions of the clutch disc assembly arc accurately positioned with respect to one another during construction of the clutch disc assembly.
摘要:
Provided is an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is characterized in that the epitaxial layer is formed on a silicon wafer for epitaxial growth having a cross-sectional form satisfying a relation of a given expression.
摘要:
A damper mechanism 4 has an input rotary body 2, a hub flange 6, a splined hub 3, a third friction washer 60, a bushing 70, and an output plate 90. The third friction washer 60 is non-rotatably mounted on the hub flange 6 with respect to the hub flange 6, and has a friction member that contacts the input rotary body 2 in the axial direction. The bushing 70 is axially disposed between the hub flange 6 and the third friction washer 60, and is mounted on the hub flange 6 and the third friction washer 60 to be incapable of rotation with respect to the third friction washer 60. The output plate 90 is disposed between the third friction washer 60 and the bushing 70 in the axial direction, and is supported by the splined hub 3 to be capable of rotating integrally with the splined hub 3.
摘要:
A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.