公开(公告)号：US5514217A

公开(公告)日：1996-05-07

申请号：US261655

申请日：1994-06-07

申请人： Hiroaki Niino ,  Tetsuya Takei ,  Masahiro Kanai ,  Ryuji Okamura

发明人： Hiroaki Niino ,  Tetsuya Takei ,  Masahiro Kanai ,  Ryuji Okamura

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23C16/54 ,  H01L21/205 ,  H01L31/04 ,  H01L31/20 ,  C23C16/00

CPC分类号： C23C16/511 ,  C23C16/545 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： An apparatus for continuously forming a functional deposited film on a continuously moving web member by microwave plasma CVD process, said apparatus comprises: a substantially enclosed columnar film-forming chamber having a curved circumferential wall formed by curving and projecting said web member as said web member is moving in the longitudinal direction by curved portion-forming means, said film-forming chamber having a film-forming space defined by a curved moving web member constituting said circumferential in which plasma is generated; at least a microwave applicator means capable of radiating a microwave energy in the direction of microwave to propagate, said microwave applicator means being mounted to said film forming chamber through one of the two side faces thereof such that part of said microwave applicator means is plunged into said film-forming space, at least said part of microwave applicator means having a dielectric exterior constituted by a dielectric material having a value of 2.times.10.sup.-2 or less in the product of the dielectric constant (.epsilon.) and the dielectric dissipation factor (tan .delta.) with respect to the frequency of microwave used;means for evacuating said film-forming chamber; means for introducing a film-forming raw material gas into said film-forming chamber; and a temperature controlling means.

摘要翻译： 一种用于通过微波等离子体CVD工艺在连续移动的网状构件上连续地形成功能沉积膜的装置，所述装置包括：基本上封闭的柱状成膜室，具有弯曲周向壁，该弯曲周壁通过弯曲和突出所述腹板构件而形成， 通过弯曲部分形成装置在纵向方向上移动，所述成膜室具有由形成有等离子体的周向的弯曲移动幅材构成的成膜空间; 至少一个能够沿微波方向辐射微波能量以传播的微波施加器装置，所述微波施加器装置通过其两个侧面之一安装到所述成膜室，使得所述微波施加装置的一部分被插入 所述成膜空间，所述微波施加器装置的至少所述部分具有由介电常数（ε）和介电损耗因数（tanδ）的乘积中的介电材料构成的电介质材料，所述电介质外部具有2×10 -2或更小的值 ）相对于使用微波的频率; 用于抽出所述成膜室的装置; 用于将成膜原料气体引入所述成膜室的装置; 和温度控制装置。

公开(公告)号：US5130170A

公开(公告)日：1992-07-14

申请号：US543499

申请日：1990-06-26

申请人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

发明人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

IPC分类号： C23C16/50 ,  C23C16/54 ,  H01J37/32 ,  H01L31/076 ,  H01L31/20

CPC分类号： H01L31/076 ,  C23C16/50 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3277 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation, to thereby generate plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuoulsy moving circumferential wall which is exposed to said plasma.

公开(公告)号：US5510151A

公开(公告)日：1996-04-23

申请号：US943991

申请日：1992-09-11

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously moving circumferential wall exposed to the plasma.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构将其沿着纵向方向延伸移动， ; 通过弯曲和突出移动的基材卷材来形成基本上封闭的成膜室，以形成作为基板从放出机构朝向卷取机构移动的成膜室的圆周壁的柱状部分; 将成膜原料气体通过气体供给器引入成膜室; 并且同时通过使用微波施加器在成膜室内辐射微波能量，微波施加器被设计成能够沿与微波传播方向平行的方向辐射微波能量，以在成膜室中产生等离子体， 从而在暴露于等离子体的连续移动的周壁的内壁面上连续地形成沉积膜。

公开(公告)号：US5714010A

公开(公告)日：1998-02-03

申请号：US450620

申请日：1995-05-25

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of said continuously moving circumferential wall to be exposed to said microwave plasma. A microwave plasma CVD apparatus suitable practicing said method.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构进行卷取，从而沿纵向方向连续地移动基板 ; 通过弯曲和突出所述移动的基材卷材来形成基本上封闭的成膜室，以在从所述放出机构朝向所述卷取机构移动的路上形成作为所述成膜室的周壁的柱状部分; 将成膜原料气体通过气体供给装置引入所述成膜室中; 同时通过使用微波施加器装置在所述成膜室内辐射微波能量，所述微波施加装置设计成能够沿与微波传播方向平行的方向辐射微波能量，以在所述膜中产生微波等离子体 从而在所述连续移动的周壁的内壁面上连续地形成沉积膜以暴露于所述微波等离子体。 适用于所述方法的微波等离子体CVD装置。

公开(公告)号：US5527391A

公开(公告)日：1996-06-18

申请号：US426629

申请日：1995-04-21

申请人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

发明人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01J37/3222 ,  C23C16/50 ,  H01J37/32192 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/50 ,  Y02P70/521

摘要： An apparatus for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The apparatus comprises the elements of a continuous traveling band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma.

摘要翻译： 描述了根据微波等离子体CVD工艺连续地形成具有大面积的功能性沉积膜的装置。 该装置包括沿其长度包含导电构件的连续行进的带状构件的元件，在该构件中通过使用行进的带状构件来建立能够基本上保持真空的柱状成膜空间 作为成膜空间的侧壁，通过气体供给装置将用于成膜的起始气体充入成膜空间，同时通过微波天线在垂直于微波运动方向的所有方向上辐射微波 使得微波功率被供应到成膜空间以在空间中引发等离子体，由此膜沉积在构成暴露于等离子体的侧壁的连续行进的带状构件的表面上。

公开(公告)号：US5520740A

公开(公告)日：1996-05-28

申请号：US459485

申请日：1995-06-02

申请人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

发明人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

IPC分类号： C23C16/50 ,  C23C16/54 ,  H01J37/32 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/50 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3277 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction of microwave energy to propagate to generate microwave plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuously moving circumferential wall to be exposed to said microwave plasma.An apparatus suitable for practicing said method.

摘要翻译： 一种通过微波等离子体CVD工艺连续地形成大面积功能性沉积膜的方法，所述方法包括：在纵向方向上连续地移动衬底腹板; 通过弯曲和突出所述移动的基材卷材来形成具有成膜空间的基本封闭的膜形成室，以在移动的路上形成作为所述成膜室的周壁的柱状部分; 将成膜原料气体通过气体供给装置引入所述成膜空间中; 同时，通过使用能够以微波能量的一个方向上的方向性辐射或传播所述微波能量的微波施加装置将微波能量辐射或传播到所述成膜空间中以在所述成膜中产生微波等离子体 从而在所述连续移动的周壁的内表面上连续地形成功能沉积膜以暴露于所述微波等离子体。 适用于实施所述方法的装置。

公开(公告)号：US5114770A

公开(公告)日：1992-05-19

申请号：US543431

申请日：1990-06-26

申请人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

发明人： Hiroshi Echizen ,  Yasushi Fujioka ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Toshimitsu Kariya ,  Jinsho Matsuyama ,  Tetsuya Takei

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L31/20

CPC分类号： H01J37/3222 ,  C23C16/50 ,  H01J37/32192 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The method comprises the steps of continuously traveling a band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma. An apparatus for carrying out the method is also described.

公开(公告)号：US20130028825A1

公开(公告)日：2013-01-31

申请号：US13636490

申请日：2011-03-25

申请人： Koji Tsuzukihashi ,  Hiroshi Ikeda ,  Masahiro Kanai ,  Saburo Wakita

发明人： Koji Tsuzukihashi ,  Hiroshi Ikeda ,  Masahiro Kanai ,  Saburo Wakita

IPC分类号： C03B5/23 ,  C01B33/02

CPC分类号： C01B33/02 ,  C01B33/037 ,  C30B11/006 ,  C30B28/06 ,  C30B29/06 ,  C30B35/002

摘要： A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm≦X

摘要翻译： 一种多晶硅锭的制造方法，其特征在于，包括：从所述硅熔体的底面单向上固化保持在坩埚中的硅熔体，其中，在侧壁的内表面和 坩埚的底部，坩埚中的凝固过程被高分割成从0到X（10mm和nlE; X <30mm）的第一区域，从X到Y的第二区域（30mm＆amp; NlE; Y <100mm） ，Y以上的第三区域以坩埚的底部为基准，第一区域的固化率V1为10mm / h×nlE; V1＆lt; ll; 20mm / h，凝固率 第二区域中的V2在1mm / h＆lt; lEE; V2＆nlE; 5mm / h的范围内。

公开(公告)号：US07139193B2

公开(公告)日：2006-11-21

申请号：US10779683

申请日：2004-02-18

申请人： Masahiro Kanai

发明人： Masahiro Kanai

IPC分类号： G11C11/34

CPC分类号： G11C16/0466 ,  G11C8/14 ,  H01L27/115

摘要： A nonvolatile semiconductor memory device having a small layout size includes a memory cell array in which a plurality of memory cells are arranged in a row direction and a column direction. The memory cell array includes a plurality of element isolation regions. Each of the memory cells includes a source region, a drain region, a channel region located between the source region and the drain region, a select gate and a word gate disposed to face the channel region, and a nonvolatile memory element formed between the word gate and the channel region. A wordline connection section which connects at least one of a plurality of word gate interconnects in an upper layer with at least one of the word gates is disposed over at least one of the element isolation regions.

摘要翻译： 具有小布局尺寸的非易失性半导体存储器件包括其中多个存储单元沿行方向和列方向布置的存储单元阵列。 存储单元阵列包括多个元件隔离区域。 每个存储单元包括源极区域，漏极区域，位于源极区域和漏极区域之间的沟道区域，设置为面对沟道区域的选择栅极和字栅极以及形成在该单元之间的非易失性存储元件 门和通道区域。 将上层中的多个字门互连中的至少一个与至少一个字栅连接的字线连接部分设置在元件隔离区域中的至少一个上。

公开(公告)号：US20050239232A1

公开(公告)日：2005-10-27

申请号：US11105498

申请日：2005-04-14

申请人： Hiroshi Sugai ,  Masahiro Kanai

发明人： Hiroshi Sugai ,  Masahiro Kanai

IPC分类号： H05B33/10 ,  C23C14/56 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L51/50 ,  H05B33/04 ,  H05B33/14

CPC分类号： C23C14/568 ,  C23C14/564 ,  H01L51/001 ,  H01L51/002 ,  H01L51/0062 ,  H01L51/56

摘要： Provided are a method of effectively manufacturing an organic EL element with high quality and an apparatus therefor. A surface to be processed of a substrate in an upper electrode forming step is held downward, and the surface to be processed of the substrate in a passivation layer forming step is held upward.

摘要翻译： 提供一种有效制造高质量有机EL元件的方法及其装置。 将上部电极形成工序中的基板的被处理面向下方保持，使钝化层形成工序中的基板的被处理面向上方保持。