公开(公告)号：US06759841B2

公开(公告)日：2004-07-06

申请号：US10172200

申请日：2002-06-14

申请人： Hirokazu Goto ,  Koji Ohtsuka ,  Takashi Kato ,  Hiromichi Kumakura

发明人： Hirokazu Goto ,  Koji Ohtsuka ,  Takashi Kato ,  Hiromichi Kumakura

IPC分类号： G01R1520

CPC分类号： G01R15/202

摘要： A current detector comprising a Hall generator assembly and a current-path conductor assembly. The Hall generator assembly includes a Hall generator in the form of a semiconductor chip mounted to a metal-made mounting plate via a sheet of magnetic material such as Permalloy. A plastic encapsulation envelops at least parts of all the components of the Hall generator assembly. The current-path conductor assembly includes a sheet-metal current-path conductor and a plastic holder molded in one piece therewith. The Hall generator assembly and the current-path conductor assembly are combined by bonding together the encapsulation of the Hall generator assembly and the conductor holder of the current-path conductor assembly into a unitary casing for the current detector. A covering of Permalloy or the like envelopes the casing.

摘要翻译： 一种电流检测器，包括霍尔发生器组件和电流通道导体组件。 霍尔发生器组件包括通过诸如坡莫合金的磁性材料片安装到金属制安装板的半导体芯片形式的霍尔发生器。 塑料封装包括霍尔发生器组件的所有部件的至少一部分。 电流通道导体组件包括一片金属片电流通道导体和一体成型的塑料保持架。 霍尔发生器组件和电流通道导体组件通过将霍尔发生器组件的封装和电流通道导体组件的导体保持器结合在一起用于电流检测器的一体式壳体来组合。 坡莫合金或类似物的覆盖物封套。

公开(公告)号：US06545457B2

公开(公告)日：2003-04-08

申请号：US09893937

申请日：2001-06-29

申请人： Hirokazu Goto ,  Koji Ohtsuka ,  Takasi Kato ,  Hiromichi Kumakura

发明人： Hirokazu Goto ,  Koji Ohtsuka ,  Takasi Kato ,  Hiromichi Kumakura

IPC分类号： G01R1520

CPC分类号： G01R33/07 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A Hall-effect semiconductor device is formed on a metal-made baseplate, as of nickel-plated copper, via a magnetic layer of Permalloy or the like. Higher in magnetic permeability than the baseplate, the magnetic layer is designed to reduce the magnetic resistance of the flux path. A plastic encapsulation thoroughly encloses the semiconductor device, magnetic layer, and baseplate.

摘要翻译： 霍尔效应半导体器件通过金合成的基板，如镀镍铜，通过坡莫合金等的磁性层形成。 导磁率高于基板，磁性层被设计成减小磁通路径的磁阻。 塑料封装完全包围半导体器件，磁性层和基板。

公开(公告)号：US06781358B2

公开(公告)日：2004-08-24

申请号：US10188504

申请日：2002-07-02

申请人： Hirokazu Goto ,  Takashi Kato ,  Hiromichi Kumakura

发明人： Hirokazu Goto ,  Takashi Kato ,  Hiromichi Kumakura

IPC分类号： G01R1900

CPC分类号： G01R15/202

摘要： A current detector comprising a first and a second current-path detector each in the form of a sheet-metal punching having a pair of relatively broad terminal webs of rectangular shape joined together via a bridge of arcuate shape. The bridges are slender compared to the terminal webs for concentrated current flow therethrough. Various arrangements are possible for the two current-path conductors, but their bridges are invariably placed in superposition upon one another. A Hall generator is positioned between the bridges so as to be acted upon by magnetic fields created upon current flow therethrough. One of the terminal webs of the first current-path conductor is electrically connected to one terminal web of the second, in such a way that the magnetic lines of force due to current flow through the two bridges act in the same direction upon the Hall generator.

摘要翻译： 一种电流检测器，包括第一和第二电流路径检测器，每个具有通过弧形桥连接在一起的具有矩形形状的一对相对较宽的端子腹板的金属板冲压件形式。 与通过其中的集中电流流动的端子网相比，桥是细长的。 对于两个电流通道导体，各种布置是可能的，但它们的桥总是彼此重叠放置。 霍尔发生器位于桥之间，以便由电流流过其中产生的磁场作用。 第一电流通道导体的端子腹板中的一个电连接到第二电流通道导体的一个端子腹板，使得由于电流流过两个电桥的磁力线在霍尔发生器上沿相同方向作用 。

公开(公告)号：US07067923B2

公开(公告)日：2006-06-27

申请号：US10726392

申请日：2003-12-02

申请人： Hiromichi Kumakura ,  Hirokazu Goto ,  Takasi Kato

发明人： Hiromichi Kumakura ,  Hirokazu Goto ,  Takasi Kato

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L23/3171 ,  H01L23/564 ,  H01L24/03 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00

摘要： A first insulation film is made of a silicon material and is provided on a semiconductor base. A second insulation film is made of an organic material and is provided on the first insulation film. The second insulation film is thicker than the first insulation film. A third insulation film is thinner than the second insulation film and is provided on the second insulation film. The third insulation film is made of a silicon material and has a moisture resistance property. A fourth insulation film is made of an organic material. The fourth insulation film is provided on the third insulation film to prevent a damage on the third insulation film. A wiring layer is provided on the fourth insulation film.

摘要翻译： 第一绝缘膜由硅材料制成并且设置在半导体基底上。 第二绝缘膜由有机材料制成并设置在第一绝缘膜上。 第二绝缘膜比第一绝缘膜厚。 第三绝缘膜比第二绝缘膜薄，并且设置在第二绝缘膜上。 第三绝缘膜由硅材料制成并具有防潮性。 第四绝缘膜由有机材料制成。 第四绝缘膜设置在第三绝缘膜上，以防止对第三绝缘膜的损坏。 布线层设置在第四绝缘膜上。