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26 条记录 (耗时 0.02 秒)

    Hall-effect current detector
    1.
    发明授权
    Hall-effect current detector 有权
    霍尔效应电流检测器

    公开(公告)号：US06759841B2

    公开(公告)日：2004-07-06

    申请号：US10172200

    申请日：2002-06-14

    申请人： Hirokazu Goto ,  Koji Ohtsuka ,  Takashi Kato ,  Hiromichi Kumakura

    发明人： Hirokazu Goto ,  Koji Ohtsuka ,  Takashi Kato ,  Hiromichi Kumakura

    IPC分类号： G01R1520

    CPC分类号： G01R15/202

    摘要： A current detector comprising a Hall generator assembly and a current-path conductor assembly. The Hall generator assembly includes a Hall generator in the form of a semiconductor chip mounted to a metal-made mounting plate via a sheet of magnetic material such as Permalloy. A plastic encapsulation envelops at least parts of all the components of the Hall generator assembly. The current-path conductor assembly includes a sheet-metal current-path conductor and a plastic holder molded in one piece therewith. The Hall generator assembly and the current-path conductor assembly are combined by bonding together the encapsulation of the Hall generator assembly and the conductor holder of the current-path conductor assembly into a unitary casing for the current detector. A covering of Permalloy or the like envelopes the casing.

    摘要翻译： 一种电流检测器，包括霍尔发生器组件和电流通道导体组件。 霍尔发生器组件包括通过诸如坡莫合金的磁性材料片安装到金属制安装板的半导体芯片形式的霍尔发生器。 塑料封装包括霍尔发生器组件的所有部件的至少一部分。 电流通道导体组件包括一片金属片电流通道导体和一体成型的塑料保持架。 霍尔发生器组件和电流通道导体组件通过将霍尔发生器组件的封装和电流通道导体组件的导体保持器结合在一起用于电流检测器的一体式壳体来组合。 坡莫合金或类似物的覆盖物封套。

    Hall-effect current detector
    3.
    发明授权
    Hall-effect current detector 失效
    霍尔效应电流检测器

    公开(公告)号：US06841989B2

    公开(公告)日：2005-01-11

    申请号：US10166203

    申请日：2002-06-10

    申请人： Hirokazu Goto ,  Akira Hasegawa ,  Koji Ohtsuka ,  Takashi Kato

    发明人： Hirokazu Goto ,  Akira Hasegawa ,  Koji Ohtsuka ,  Takashi Kato

    IPC分类号： G01R15/20 ,  G01R33/07

    CPC分类号： G01R33/07 ,  G01R15/202

    摘要： A current detector comprising a current-path conductor assembly and a Hall generator assembly. The current-path conductor assembly includes a sheet-metal current-path conductor and a plastic conductor holder molded in one piece therewith. The Hall generator assembly includes a Hall generator in the form of a semiconductor chip mounted to a metal-made mounting plate, a set of leads electrically connected to the Hall generator, and a plastic encapsulation enveloping the Hall generator and parts of the leads. The Hall generator assembly and the current-path conductor assembly are combined by bonding together the encapsulation of the Hall generator assembly and the conductor holder of the current-path conductor assembly. The conductor holder and the encapsulation are shaped in interfitting relationship to each other, so that when they are united, the Hall generator is positioned to generate a Hall voltage in response to a magnetic field due to the current flowing through the current-path conductor.

    摘要翻译： 一种电流检测器，包括电流通道导体组件和霍尔发生器组件。 电流通道导体组件包括一片金属电流通道导体和一体成型的塑料导体支架。 霍尔发生器组件包括安装到金属制安装板的半导体芯片形式的霍尔发生器，电连接到霍尔发生器的一组引线以及包围霍尔发生器和导线的部分的塑料封装。 霍尔发生器组件和电流通道导体组件通过将霍尔发生器组件的封装和电流通道导体组件的导体保持器结合在一起而组合。 导体保持器和封装形状彼此相互关联，使得当它们被联合时，霍尔发生器被定位成响应于流过电流通道导体的电流而响应于磁场而产生霍尔电压。

    P-N junction semiconductor device and method of fabrication
    5.
    发明授权
    P-N junction semiconductor device and method of fabrication 失效
    P-N结半导体器件及其制造方法

    公开(公告)号：US4980749A

    公开(公告)日：1990-12-25

    申请号：US319951

    申请日：1989-03-07

    申请人： Koji Ohtsuka ,  Hirokazu Goto

    发明人： Koji Ohtsuka ,  Hirokazu Goto

    IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/47 ,  H01L29/861

    CPC分类号： H01L29/405 ,  H01L29/408 ,  H01L29/475 ,  H01L29/8611 ,  Y10S148/14

    摘要： A gallium arsenide diode is disclosed which has a very thin resistive layer of a metal oxide, typically titanium oxide, formed annularly on a semiconductor substrate across the exposed annular periphery of a p-n junciton. The titanium oxide layer has a sheet resistance of not less than 10 kilohms per square and creates a Schottky barrier between itself and the neighboring n type region of the substrate. The titanium oxide layer can be formed by first vacuum depositing titanium on the substrate and then heating the titanium layer.

    摘要翻译： 公开了一种砷化镓二极管，其具有非常薄的电阻层，金属氧化物（通常为氧化钛）在半导体衬底上跨越p型掩模的暴露的环形周边环形地形成。 氧化钛层具有不小于10千欧/平方的薄层电阻，并在其自身与基板的相邻n型区域之间产生肖特基势垒。 氧化钛层可以通过在基板上首先真空沉积钛，然后加热钛层来形成。

    Method of fabricating a high-voltage semiconductor device having a rectifying barrier
    6.
    发明授权
    Method of fabricating a high-voltage semiconductor device having a rectifying barrier 失效
    制造具有整流栅的高电压半导体器件的方法

    公开(公告)号：US5112774A

    公开(公告)日：1992-05-12

    申请号：US640032

    申请日：1991-02-15

    申请人： Koji Ohtsuka ,  Hirokazu Goto

    发明人： Koji Ohtsuka ,  Hirokazu Goto

    IPC分类号： H01L29/06 ,  H01L21/329 ,  H01L29/47 ,  H01L29/872

    CPC分类号： H01L29/66143 ,  H01L29/475 ,  H01L29/872 ,  Y10S148/139 ,  Y10S148/14 ,  Y10S438/934

    摘要： A semiconductor device such as a Schottky-barrier rectifier diode is disclosed which has a barrier electrode formed on a semiconductor substrate of gallium arsenide or the like. Formed around the barrier electrode is an annular resistive layer, typically of titanium oxide, creating a Schottky barrier at its interface with the semiconductor substrate. The resistive layer has a sheet resistance of more than 10 kilohms per square. In order to prevent preliminary breakdowns from taking place at the peripheral part of the resistive layer before final breakdown of the device, the sheet resistance of the resistive layer is made higher as it extends away from the barrier electrode. For the ease of manufacture, the resistive layer can be divided into two or more annular regions of distinctly different sheet resistances.

    High-voltage semiconductor device having a rectifying barrier, and method of fabrication
    7.
    发明授权
    High-voltage semiconductor device having a rectifying barrier, and method of fabrication 失效
    具有修复障碍物的高电压半导体器件及其制造方法

    公开(公告)号：US5081510A

    公开(公告)日：1992-01-14

    申请号：US427734

    申请日：1989-10-26

    申请人： Koji Ohtsuka ,  Hirokazu Goto

    发明人： Koji Ohtsuka ,  Hirokazu Goto

    IPC分类号： H01L29/06 ,  H01L21/329 ,  H01L29/47 ,  H01L29/872

    CPC分类号： H01L29/66143 ,  H01L29/475 ,  H01L29/872 ,  Y10S148/139 ,  Y10S148/14 ,  Y10S438/934

    摘要： A semiconductor device such as a Schottky-barrier rectifier diode is disclosed which has a barrier electrode formed on a semiconductor substrate of gallium arsenide or the like. Formed around the barrier electrode is an annular resistive layer, typically of titanium oxide, creating a Schottky barrier at its interface with the semiconductor substrate. The resistive layer has a sheet resistance of more than 10 kilohms per square. In order to prevent preliminary breakdowns from taking place at the peripheral part of the resistive layer before final breakdown of the device, the sheet resistance of the resistive layer is made higher as it extends away from the barrier electrode. For the ease of manufacture, the resistive layer can be divided into two or more annular regions of distinctly different sheet resistances.

    Differential device
    8.
    发明授权
    Differential device 有权
    差分装置

    公开(公告)号：US07780565B2

    公开(公告)日：2010-08-24

    申请号：US11823700

    申请日：2007-06-27

    申请人： Masaaki Fusegi ,  Koji Ohtsuka

    发明人： Masaaki Fusegi ,  Koji Ohtsuka

    IPC分类号： F16H48/06

    CPC分类号： F16H48/30 ,  F16H48/08 ,  F16H48/24 ,  F16H48/34 ,  F16H48/40 ,  F16H2048/204 ,  F16H2048/346

    摘要： A differential device for differentially distributing a driving force to axles along an axis is disclosed. The differential device has a case being capable of rotation about the axis, which includes a flange configured to receive the driving force and a shaft crossing the case perpendicularly to the axis; an opening defined by a peripheral border on an outer periphery of the case so as to allow access into the case, lateral extremities of which is deviated from a center of the shaft toward a direction opposite to the flange along the axis; and a differential gear set housed in and drivingly coupled to the case, the differential gear set including an input gear rotatable around the shaft and output gears so combined with the input gear as to differentially distribute the driving force to the output gears, the output gears being drivingly coupled to the axles.

    摘要翻译： 公开了一种用于沿着轴将轴的驱动力差分地分配的差动装置。 所述差速装置具有能够围绕所述轴线旋转的壳体，所述壳体包括被配置为接收所述驱动力的凸缘和垂直于所述轴线的所述壳体的轴; 由壳体的外周边缘的周边限定的开口，以允许其进入壳体，其横向的轴线从轴的中心向与轴向方向相反的方向偏离; 以及差速齿轮组，其容纳在壳体中并且驱动地联接到壳体，差速齿轮组包括可围绕轴旋转的输入齿轮，并输出与输入齿轮组合的齿轮，以将驱动力差分地分配到输出齿轮，输出齿轮 被驱动地联接到轴。

    Semiconductor current detector of improved noise immunity
    10.
    发明授权
    Semiconductor current detector of improved noise immunity 失效
    半导体电流检测器，提高抗噪声能力

    公开(公告)号：US06812687B1

    公开(公告)日：2004-11-02

    申请号：US09724979

    申请日：2000-11-28

    申请人： Koji Ohtsuka

    发明人： Koji Ohtsuka

    IPC分类号： G01R3300

    CPC分类号： H01L43/065 ,  G01R15/202

    摘要： A current detector has a semiconductor Hall-effect device having a primary semiconductor region where a Hall voltage develops in proportion to the magnitude of the current to be detected. A conductor strip for carrying this current is formed on the semiconductor substrate via a plurality of insulating layers so as to extend around the primary semiconductor region of the Hall-effect device. In order to protect the Hall-effect device from inductive noise, a shielding layer of molybdenum or the like is interposed between the semiconductor substrate and the conductor strip, preferably by being sandwiched between the insulating layers.

    摘要翻译： 电流检测器具有半导体霍尔效应器件，其具有与要检测的电流的大小成比例地形成霍尔电压的初级半导体区域。 通过多个绝缘层在半导体衬底上形成用于承载该电流的导体条，以便围绕霍尔效应器件的初级半导体区域延伸。 为了保护霍尔效应器件免受电感噪声的影响，优选通过夹在绝缘层之间，在半导体衬底和导体条之间插入有钼或类似屏蔽层。