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公开(公告)号:US6057049A
公开(公告)日:2000-05-02
申请号:US571803
申请日:1995-12-13
申请人: Hiromi Fuke , Yuuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Kazuhiro Saito , Hitoshi Iwasaki , Masashi Sahashi
发明人: Hiromi Fuke , Yuuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Kazuhiro Saito , Hitoshi Iwasaki , Masashi Sahashi
CPC分类号: B82Y25/00 , G01R33/093 , G11B5/399 , H01F10/3218 , H01F10/3268 , H01L43/10 , Y10T428/1121 , Y10T428/12861 , Y10T428/263
摘要: An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film comprises an IrMn alloy represented by the general formula of Ir.sub.x Mn.sub.100-x, wherein x stands for a value by atomic % satisfying the expression, 2.ltoreq.x.ltoreq.80.
摘要翻译: 交换耦合膜包括层叠在铁磁膜上的铁磁膜和反铁磁膜,其中至少一部分反铁磁膜具有面心立方晶体结构,反铁磁膜包括由通式IrxMn100表示的IrMn合金 -x,其中x表示满足表达式2 = x <80的原子%的值。
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公开(公告)号:US06455178B1
公开(公告)日:2002-09-24
申请号:US09471498
申请日:1999-12-23
申请人: Hiromi Fuke , Yuuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Kazuhiro Saito , Hitoshi Iwasaki , Masashi Sahashi
发明人: Hiromi Fuke , Yuuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Kazuhiro Saito , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号: B32B1504
CPC分类号: B82Y25/00 , G01R33/093 , G11B5/399 , H01F10/3218 , H01F10/3268 , H01L43/10 , Y10T428/1121 , Y10T428/12861 , Y10T428/263
摘要: An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film comprises an IrMn alloy represented by the general formula of IrxMn100−x, wherein x stands for a value by atomic % satisfying the expression, 2≦x≦80.
摘要翻译: 交换耦合膜包括层叠在铁磁膜上的铁磁膜和反铁磁膜,其中至少一部分反铁磁膜具有面心立方晶体结构,反铁磁膜包括由通式IrxMn100表示的IrMn合金 -x,其中x代表满足表达式2 <= x <= 80的原子%的值。
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公开(公告)号:US5756191A
公开(公告)日:1998-05-26
申请号:US785318
申请日:1997-01-21
申请人: Susumu Hashimoto , Yuzo Kamiguchi , Hiromi Fuke , Hitoshi Iwasaki , Tomomi Funayama , Masashi Sahashi
发明人: Susumu Hashimoto , Yuzo Kamiguchi , Hiromi Fuke , Hitoshi Iwasaki , Tomomi Funayama , Masashi Sahashi
CPC分类号: B82Y25/00 , G11B5/3903 , H01F10/3218 , H01F10/3268 , H01L43/10 , Y10T428/24917
摘要: An exchange coupling film comprising a first antiferromagnetic film, a ferromagnetic film formed as superposed on the first antiferromagnetic film, and a second antiferromagnetic film formed in the interface between the first antiferromagnetic film and the ferromagnetic film, characterized in that the first antiferromagnetic film has a crystal structure selected from the group consisting of tetragonal, body-centered cubic, and NaCl type and the second antiferromagnetic film of .gamma. phase M-Mn alloys with the crystal structure of face-centered cubic, wherein M stands for at least one element selected from the group consisting of Fe, Co, and Ni.
摘要翻译: 一种交换耦合膜,包括第一反铁磁膜,形成为叠置在第一反铁磁膜上的铁磁膜和形成在第一反铁磁膜和铁磁膜之间的界面中的第二反铁磁膜,其特征在于,第一反铁磁膜具有 晶体结构选自正方晶,体心立方和NaCl型,γ相M-Mn合金的第二反铁磁膜具有面心立方晶体结构,其中M代表至少一种选自 由Fe,Co和Ni组成的组。
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公开(公告)号:US06483673B1
公开(公告)日:2002-11-19
申请号:US09085101
申请日:1998-05-28
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
IPC分类号: G11B539
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要: A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译: GMR元件部分由层叠结构形成,该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。 信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成,该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构,该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层 层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头,用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。 将使用粒状铁磁中间层作为GMR元件部分。
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公开(公告)号:US5796560A
公开(公告)日:1998-08-18
申请号:US614146
申请日:1996-03-12
申请人: Kazuhiro Saito , Yuzo Kamiguchi , Hitoshi Iwasaki , Susumu Hashimoto , Hiromi Fuke , Tomomi Funayama
发明人: Kazuhiro Saito , Yuzo Kamiguchi , Hitoshi Iwasaki , Susumu Hashimoto , Hiromi Fuke , Tomomi Funayama
IPC分类号: G11B5/39
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3916 , G11B2005/3996
摘要: A magnetoresistive head is disclosed which uses a crystalline soft magnetic film as an undercoat for a giant magnetoresistive film provided with at least one pair of ferro-magnetic films opposed to each other across a nonmagnetic intermediate layer or for an anisotropically magnetoresistive film. The crystalline soft magnetic film comprises a film which has as a main component thereof at least one element selected from the group consisting of Ni, Fe, and Co and simultaneously incorporates therein at least one element selected from the group consisting of Nb, Mo, V, W, Ti, Zr, Hf, and Ta and at least one element selected from the group consisting of Cr, Rh, Os, Re, Si, Al, Be, Ga, and Ge.
摘要翻译: 公开了一种使用结晶软磁膜作为底涂层的磁阻磁头,该磁阻膜具有在非磁性中间层或各向异性磁阻膜上彼此相对的至少一对铁磁性膜的巨磁阻膜。 结晶软磁性膜包含以Ni,Fe,Co为主成分的至少一种元素作为主要成分的膜,同时含有选自Nb,Mo,V ,W,Ti,Zr,Hf和Ta以及选自Cr,Rh,Os,Re,Si,Al,Be,Ga和Ge中的至少一种元素。
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公开(公告)号:US5828525A
公开(公告)日:1998-10-27
申请号:US401489
申请日:1995-03-10
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996 , G11B5/1278
摘要: A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译: GMR元件部分由层叠结构形成,该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。 信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成,该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构,该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层 层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头,用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。 将使用粒状铁磁中间层作为GMR元件部分。
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公开(公告)号:US5336337A
公开(公告)日:1994-08-09
申请号:US830569
申请日:1992-02-04
CPC分类号: H01F1/0306 , H01L41/20
摘要: The magnetostriction alloys of the present invention are composed basically of Tb-Dy-iron which is partially substituted by at least one element selected from the group consisting of Y, La, Cs, Pr, Nd and Sm, and have been grown in the direction of face index or contain Mn and M element (at least one metallic element selected from the group consisting of C, Mg, Al, Si, Ca, Zr, Y, Ga and B. The magnetostrictive alloy may be formed by melting the constituent materials by high frequency induction dissolution. The molten materials are cast in a heated mold having a temperature gradient. The solidified material may be further treated by hot working.
摘要翻译: 本发明的磁致伸缩合金基本上由部分被选自Y,La,Cs,Pr,Nd和Sm中的至少一种元素取代的Tb-Dy-铁组成,并且沿着 的表面指数<110>或含有Mn和M元素(选自C,Mg,Al,Si,Ca,Zr,Y,Ga和B中的至少一种金属元素)。磁致伸缩合金可以通过熔化 通过高频感应溶解构成材料,熔融材料在具有温度梯度的加热模具中铸造,固化材料可以通过热加工进一步处理。
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公开(公告)号:US5190599A
公开(公告)日:1993-03-02
申请号:US586983
申请日:1990-09-24
申请人: Masashi Sahashi , Yoichi Tokai , Tomomi Funayama
发明人: Masashi Sahashi , Yoichi Tokai , Tomomi Funayama
CPC分类号: G11B5/653 , H01F1/012 , H01F1/0306
摘要: A magnetic memory and a magnetic alloy thereof are disclosed, which comprise a magnetic alloy whose main phase is an iso-molar compound phase, the iso-molar compound phase being represented with general expression Pt(Fe.sub.1-x Mn.sub.x)Sn where the relationship of 0
摘要翻译: 公开了一种磁记忆体及其磁性合金,它们包括主相为异摩尔化合物相的磁性合金,异摩尔化合物相以通式Pt(Fe1-x Mnx)Sn表示,其中, 0
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公开(公告)号:US5527398A
公开(公告)日:1996-06-18
申请号:US140308
申请日:1993-10-22
CPC分类号: H01F1/0306 , H01L41/20
摘要: The magnetostriction alloys of the present invention are composed basically of Tb--Dy-iron which is partially substituted by at least one element selected from the group consisting of Y, La, Ce, Pr, Nd and Sm, and have been grown in the direction of face index or contain Mn and M element (at least one metallic element selected from the group consisting of C, Mg, Al, Si, Ca, Zr, Y, Ga and B. The magnetostrictive alloy may be formed by melting the constituent materials by high frequency induction dissolution. The molten materials are cast in a heated mold having a temperature gradient. The solidified material may be further treated by hot working.
摘要翻译: 本发明的磁致伸缩合金基本上由Tb-Dy-Fe组成,其部分地被选自Y,La,Ce,Pr,Nd和Sm中的至少一种元素取代,并且已经沿着 的表面指数<110>或含有Mn和M元素(选自C,Mg,Al,Si,Ca,Zr,Y,Ga和B中的至少一种金属元素)。磁致伸缩合金可以通过熔化 通过高频感应溶解构成材料,熔融材料在具有温度梯度的加热模具中铸造,固化材料可以通过热加工进一步处理。
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公开(公告)号:US20120275061A1
公开(公告)日:2012-11-01
申请号:US13459610
申请日:2012-04-30
申请人: Masayuki TAKAGISHI , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui , Tomomi Funayama , Masahiro Takashita , Mariko Kitazaki , Soichi Oikawa
发明人: Masayuki TAKAGISHI , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui , Tomomi Funayama , Masahiro Takashita , Mariko Kitazaki , Soichi Oikawa
CPC分类号: G11B5/3146 , G11B5/02 , G11B5/1278 , G11B5/65 , G11B2005/0005 , G11B2005/0024 , H01F10/123 , H01L43/08
摘要: According to one embodiment, a magnetic recording device includes a magnetic recording head and a magnetic recording medium. The magnetic recording head includes a main magnetic pole, a shield and a stacked structure. The main magnetic pole has a medium facing surface and a main magnetic pole side surface. The shield has a shield side surface. The stacked structure is provided between the main magnetic pole and shield, and includes first and second magnetic layers, and an intermediate layer. The magnetic recording medium includes a backing layer and a magnetic recording layer. A distance between an end portion of the medium facing surface on a side of the stacked structure and the backing layer is twice or more of a distance between the main magnetic pole side surface and the shield side surface.
摘要翻译: 根据一个实施例,磁记录装置包括磁记录头和磁记录介质。 磁记录头包括主磁极,屏蔽和堆叠结构。 主磁极具有中等面向表面和主磁极侧表面。 屏蔽有屏蔽侧面。 堆叠结构设置在主磁极和屏蔽之间,并且包括第一和第二磁性层以及中间层。 磁记录介质包括背衬层和磁记录层。 层叠结构一侧的介质相对表面的端部与背衬层之间的距离是主磁极侧表面和屏蔽侧表面之间的距离的两倍或更多。
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