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公开(公告)号:US06483673B1
公开(公告)日:2002-11-19
申请号:US09085101
申请日:1998-05-28
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
IPC分类号: G11B539
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要: A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译: GMR元件部分由层叠结构形成,该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。 信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成,该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构,该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层 层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头,用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。 将使用粒状铁磁中间层作为GMR元件部分。
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公开(公告)号:US5828525A
公开(公告)日:1998-10-27
申请号:US401489
申请日:1995-03-10
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996 , G11B5/1278
摘要: A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译: GMR元件部分由层叠结构形成,该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。 信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成,该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构,该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层 层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头,用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。 将使用粒状铁磁中间层作为GMR元件部分。
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公开(公告)号:US06395388B1
公开(公告)日:2002-05-28
申请号:US09442032
申请日:1999-11-17
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号: G11B566
CPC分类号: B82Y25/00 , B82Y10/00 , E05B17/2007 , E05B67/36 , E05C1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T70/498 , Y10T70/5319 , Y10T292/1025 , Y10T428/11 , Y10T428/1107 , Y10T428/26 , Y10T428/265
摘要: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
摘要翻译: 本发明提供一种交换耦合膜,其具有由由Fe,Co和Ni的至少一种材料制成的铁磁膜和反铁磁膜构成的层叠膜结构,其中由铁磁材料制成的交换耦合膜, 在铁磁膜和反铁磁膜之间的界面处设置元件,以改善晶格匹配,这导致交换耦合力的增强,以及包括如上所述的这种交换耦合膜的磁电阻效应元件 以及用于向构成交换耦合膜的铁磁膜提供电流的电极。
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公开(公告)号:US06368706B1
公开(公告)日:2002-04-09
申请号:US09111884
申请日:1998-07-08
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号: G11B566
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
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公开(公告)号:US6159593A
公开(公告)日:2000-12-12
申请号:US61070
申请日:1998-04-16
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
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公开(公告)号:US5780176A
公开(公告)日:1998-07-14
申请号:US672912
申请日:1996-06-28
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
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公开(公告)号:US5702832A
公开(公告)日:1997-12-30
申请号:US652850
申请日:1996-05-23
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要: It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
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公开(公告)号:US5688605A
公开(公告)日:1997-11-18
申请号:US652796
申请日:1996-05-23
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要: It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译: 本发明的目的是提供一种磁阻效应元件,其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜,并且可以应用于高灵敏度磁头。 本发明提供一种磁电阻效应元件,其包括通过依次层叠含有作为其主要成分的至少一种选自Co,Fe和Ni的元素的铁磁性膜,非磁性膜,形成在基板上的层叠膜, 铁磁膜,其中两个铁磁膜彼此不耦合,并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。
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公开(公告)号:US5738946A
公开(公告)日:1998-04-14
申请号:US652784
申请日:1996-05-23
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要: It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译: 本发明的目的是提供一种磁阻效应元件,其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜,并且可以应用于高灵敏度磁头。 本发明提供一种磁电阻效应元件,其包括:通过依次层叠含有选自Co,Fe和Ni中的至少一种元素作为其主要成分的铁磁性膜,形成在基板上的非磁性膜, 和铁磁膜,其中两个铁磁膜彼此不耦合,并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。
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公开(公告)号:US5549978A
公开(公告)日:1996-08-27
申请号:US144258
申请日:1993-11-01
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要: It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译: 本发明的目的是提供一种磁阻效应元件,其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜,并且可以应用于高灵敏度磁头。 本发明提供一种磁电阻效应元件,其包括通过依次层叠含有作为其主要成分的至少一种选自Co,Fe和Ni的元素的铁磁性膜,非磁性膜,形成在基板上的层叠膜, 铁磁膜,其中两个铁磁膜彼此不耦合,并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。
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