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1.
公开(公告)号:US06483673B1
公开(公告)日:2002-11-19
申请号:US09085101
申请日:1998-05-28
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
IPC分类号: G11B539
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要: A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译: GMR元件部分由层叠结构形成,该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。 信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成,该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构,该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层 层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头,用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。 将使用粒状铁磁中间层作为GMR元件部分。
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公开(公告)号:US5828525A
公开(公告)日:1998-10-27
申请号:US401489
申请日:1995-03-10
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996 , G11B5/1278
摘要: A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译: GMR元件部分由层叠结构形成,该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。 信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成,该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构,该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层 层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头,用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。 将使用粒状铁磁中间层作为GMR元件部分。
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公开(公告)号:US06395388B1
公开(公告)日:2002-05-28
申请号:US09442032
申请日:1999-11-17
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号: G11B566
CPC分类号: B82Y25/00 , B82Y10/00 , E05B17/2007 , E05B67/36 , E05C1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T70/498 , Y10T70/5319 , Y10T292/1025 , Y10T428/11 , Y10T428/1107 , Y10T428/26 , Y10T428/265
摘要: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
摘要翻译: 本发明提供一种交换耦合膜,其具有由由Fe,Co和Ni的至少一种材料制成的铁磁膜和反铁磁膜构成的层叠膜结构,其中由铁磁材料制成的交换耦合膜, 在铁磁膜和反铁磁膜之间的界面处设置元件,以改善晶格匹配,这导致交换耦合力的增强,以及包括如上所述的这种交换耦合膜的磁电阻效应元件 以及用于向构成交换耦合膜的铁磁膜提供电流的电极。
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公开(公告)号:US06368706B1
公开(公告)日:2002-04-09
申请号:US09111884
申请日:1998-07-08
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号: G11B566
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
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公开(公告)号:US6159593A
公开(公告)日:2000-12-12
申请号:US61070
申请日:1998-04-16
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
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公开(公告)号:US5780176A
公开(公告)日:1998-07-14
申请号:US672912
申请日:1996-06-28
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
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公开(公告)号:US5796560A
公开(公告)日:1998-08-18
申请号:US614146
申请日:1996-03-12
申请人: Kazuhiro Saito , Yuzo Kamiguchi , Hitoshi Iwasaki , Susumu Hashimoto , Hiromi Fuke , Tomomi Funayama
发明人: Kazuhiro Saito , Yuzo Kamiguchi , Hitoshi Iwasaki , Susumu Hashimoto , Hiromi Fuke , Tomomi Funayama
IPC分类号: G11B5/39
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3916 , G11B2005/3996
摘要: A magnetoresistive head is disclosed which uses a crystalline soft magnetic film as an undercoat for a giant magnetoresistive film provided with at least one pair of ferro-magnetic films opposed to each other across a nonmagnetic intermediate layer or for an anisotropically magnetoresistive film. The crystalline soft magnetic film comprises a film which has as a main component thereof at least one element selected from the group consisting of Ni, Fe, and Co and simultaneously incorporates therein at least one element selected from the group consisting of Nb, Mo, V, W, Ti, Zr, Hf, and Ta and at least one element selected from the group consisting of Cr, Rh, Os, Re, Si, Al, Be, Ga, and Ge.
摘要翻译: 公开了一种使用结晶软磁膜作为底涂层的磁阻磁头,该磁阻膜具有在非磁性中间层或各向异性磁阻膜上彼此相对的至少一对铁磁性膜的巨磁阻膜。 结晶软磁性膜包含以Ni,Fe,Co为主成分的至少一种元素作为主要成分的膜,同时含有选自Nb,Mo,V ,W,Ti,Zr,Hf和Ta以及选自Cr,Rh,Os,Re,Si,Al,Be,Ga和Ge中的至少一种元素。
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公开(公告)号:US5756191A
公开(公告)日:1998-05-26
申请号:US785318
申请日:1997-01-21
申请人: Susumu Hashimoto , Yuzo Kamiguchi , Hiromi Fuke , Hitoshi Iwasaki , Tomomi Funayama , Masashi Sahashi
发明人: Susumu Hashimoto , Yuzo Kamiguchi , Hiromi Fuke , Hitoshi Iwasaki , Tomomi Funayama , Masashi Sahashi
CPC分类号: B82Y25/00 , G11B5/3903 , H01F10/3218 , H01F10/3268 , H01L43/10 , Y10T428/24917
摘要: An exchange coupling film comprising a first antiferromagnetic film, a ferromagnetic film formed as superposed on the first antiferromagnetic film, and a second antiferromagnetic film formed in the interface between the first antiferromagnetic film and the ferromagnetic film, characterized in that the first antiferromagnetic film has a crystal structure selected from the group consisting of tetragonal, body-centered cubic, and NaCl type and the second antiferromagnetic film of .gamma. phase M-Mn alloys with the crystal structure of face-centered cubic, wherein M stands for at least one element selected from the group consisting of Fe, Co, and Ni.
摘要翻译: 一种交换耦合膜,包括第一反铁磁膜,形成为叠置在第一反铁磁膜上的铁磁膜和形成在第一反铁磁膜和铁磁膜之间的界面中的第二反铁磁膜,其特征在于,第一反铁磁膜具有 晶体结构选自正方晶,体心立方和NaCl型,γ相M-Mn合金的第二反铁磁膜具有面心立方晶体结构,其中M代表至少一种选自 由Fe,Co和Ni组成的组。
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公开(公告)号:US6157525A
公开(公告)日:2000-12-05
申请号:US340717
申请日:1999-06-29
申请人: Hitoshi Iwasaki , Reiko Kondoh , Hiroaki Yoda , Yuichi Ohsawa , Yuzo Kamiguchi , Susumu Hashimoto
发明人: Hitoshi Iwasaki , Reiko Kondoh , Hiroaki Yoda , Yuichi Ohsawa , Yuzo Kamiguchi , Susumu Hashimoto
IPC分类号: G11B5/39
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要: A magnetoresistive head includes a magnetoresistive effect element including a magnetoresistive film, which has a first ferromagnetic layer and a second ferromagnetic layer separated by a nonmagnetic layer. A magnetization direction of the first ferromagnetic layer is perpendicular to a magnetization direction of the second ferromagnetic layer when a signal magnetic field is zero. A pair of bias layers provide magnetic bias, and a top surface of each of the pair of bias layers faces a lower surface of each edge region of the magnetoresistive film. A pair of lead electrodes produce a current flow through the magnetoresistive film, and each of the pair of lead electrodes is disposed on or above the magnetoresistive film.
摘要翻译: 磁阻头包括具有磁阻膜的磁阻效应元件,该磁阻效应元件具有由非磁性层分离的第一铁磁层和第二铁磁层。 当信号磁场为零时,第一铁磁层的磁化方向垂直于第二铁磁层的磁化方向。 一对偏置层提供磁偏置,并且该对偏压层中的每一个的顶表面面对磁阻膜的每个边缘区域的下表面。 一对引线电极产生通过磁阻膜的电流,并且一对引线电极中的每一个设置在磁阻膜上或上方。
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公开(公告)号:US5738946A
公开(公告)日:1998-04-14
申请号:US652784
申请日:1996-05-23
申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要: It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译: 本发明的目的是提供一种磁阻效应元件,其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜,并且可以应用于高灵敏度磁头。 本发明提供一种磁电阻效应元件,其包括:通过依次层叠含有选自Co,Fe和Ni中的至少一种元素作为其主要成分的铁磁性膜,形成在基板上的非磁性膜, 和铁磁膜,其中两个铁磁膜彼此不耦合,并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。
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