公开(公告)号：US5588016A

公开(公告)日：1996-12-24

申请号：US523389

申请日：1995-09-05

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

公开(公告)号：US5880766A

公开(公告)日：1999-03-09

申请号：US751674

申请日：1996-11-18

申请人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

发明人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

IPC分类号： B41J2/44 ,  G06K15/12 ,  H04N1/04 ,  H04N1/047 ,  H04N1/12 ,  H04N1/193 ,  G03G15/04

CPC分类号： H04N1/047 ,  G06K15/1238 ,  H04N1/1932 ,  H04N1/12 ,  H04N1/193 ,  H04N2201/046 ,  H04N2201/04729 ,  H04N2201/04755

摘要： An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the photosensitive member on account of physical distortions caused by external vibration, temperature change, and the like. Changes in the diameter of detective light beams are measured by photodetecting portions 5.sub.R and 5.sub.L and piezoelectric devices 6a and 6b are driven based on the results of the detection, whereby the semiconductor laser array 1 is moved so that the multiplication b/a for the image size may be kept constant.

摘要翻译： 公开了一种用于校正图像记录装置中的光源发射光束的位置偏差的装置，其用于校正由于光敏部件上光束部件上的光束点的位置偏差导致的感光部件上的图像尺寸（尺寸）的变化 由外部振动，温度变化等引起的物理失真。 通过光检测部5R和5L测量检测光束的直径变化，并且基于检测结果来驱动压电器件6a和6b，由此使半导体激光器阵列1移动，使得图像的乘法b / a 尺寸可能保持不变。

公开(公告)号：US5809052A

公开(公告)日：1998-09-15

申请号：US731750

申请日：1996-10-18

申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

IPC分类号： H01S5/062 ,  H01S5/40 ,  H01S3/08

CPC分类号： H01S5/4031 ,  H01S5/0021 ,  H01S5/06216

摘要： A semiconductor laser array driving method for driving a semiconductor laser array having a plurality of light-emitting points arranged on a base member. The semiconductor laser array driving method has a step of driving the plurality of light-emitting points by a driving pulse current of a pulse width and a duty factor meeting an inequality: .DELTA.T.sub.1 /.DELTA.T.sub.0

摘要翻译： 一种用于驱动具有布置在基底构件上的多个发光点的半导体激光器阵列的半导体激光阵列驱动方法。 半导体激光阵列驱动方法具有通过满足不等式的脉冲宽度和占空比的驱动脉冲电流来驱动多个发光点的步骤：DELTA T1 / DELTA T0 <+ E，fra 1/2 + EE 其中，当使用连续电流以连续驱动模式驱动半导体激光器阵列时，DELTA T0是发光点的有源层中的温度升高，并且DELTA T1是发光的有源层中的温度升高 当使用脉冲电流以脉冲驱动模式驱动半导体激光器阵列时的点。 在半导体激光器阵列驱动方法中，多个发光点由占空比为0.4以下的驱动脉冲电流驱动，满足不等式：y <3.1exp（-8.9x），其中x是占空系数 y是脉冲宽度（mu s）。

公开(公告)号：US5648295A

公开(公告)日：1997-07-15

申请号：US687938

申请日：1996-07-29

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

公开(公告)号：US5491709A

公开(公告)日：1996-02-13

申请号：US106700

申请日：1993-08-16

申请人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

发明人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/32325 ,  H01S5/34326 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/3407

摘要： In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.

摘要翻译： 在根据本发明的半导体激光器件中，包覆层包括第一覆盖层，其每一个具有比有源层更大的带隙，并且具有0.003至0.3μm的厚度，以及第二覆盖层具有 比有源层​​低的折射率，并且第一包层分别设置成比第二包层更靠近有源层。 在该结构中，第一覆盖层将载流子限制在有源层中，而第二覆盖层将光限制在有源层中。 由于每个第一包层由薄膜形成，所以载流子由于其隧道现象而难以从有源层向外移动，并且即使其晶格常数稍微不同，第一覆层可以是晶格 与底物匹配。 为此，可以选择第二包层的材料而不考虑其带隙的尺寸。 这使得可以减小激光器的振荡阈值电流密度以及提高激光器的温度特性。

公开(公告)号：US5533042A

公开(公告)日：1996-07-02

申请号：US317594

申请日：1994-10-03

申请人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

发明人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

IPC分类号： G11B7/09 ,  G11B7/125 ,  H01S5/042 ,  H01S5/062 ,  H01S5/20 ,  H01S5/40 ,  H01S3/18 ,  G11B7/00

CPC分类号： G11B7/127 ,  G11B7/0901 ,  H01S5/0425 ,  H01S5/20 ,  H01S5/06243 ,  H01S5/4031

摘要： A semiconductor laser device which allows high speed correction of the position of a laser spot on an optical disk is disclosed. The semiconductor laser device comprises an active layer which oscillates a laser beam when electric current is supplied thereto, and a plurality of independent electrodes for varying the current density distribution in the active layer to vary the intensity distribution of the laser beam to be emitted from an emergent face of the semiconductor laser device. With the semiconductor laser device, by supplying electric currents individually from the plurality of independent electrodes to vary the current density distribution in the active layer, the beam spot position can be corrected within the frequency bandwidth of several tens MHz by direct modulation of the semiconductor laser device. Also a driving method for the semiconductor laser device and a tracking servo system in which the semiconductor laser device is incorporated are disclosed.

摘要翻译： 公开了一种允许高速校正光盘上的激光点位置的半导体激光器件。 半导体激光器件包括在向其提供电流时使激光束振荡的有源层，以及用于改变有源层中的电流密度分布的多个独立电极，以改变激光束的发射强度分布 半导体激光装置的紧急面。 利用半导体激光装置，通过从多个独立电极分别供给电流来改变有源层中的电流密度分布，可以通过半导体激光器的直接调制在数十MHz的频带内修正光束位置 设备。 还公开了半导体激光器件的驱动方法和其中结合半导体激光器件的跟踪伺服系统。

公开(公告)号：US5394425A

公开(公告)日：1995-02-28

申请号：US201342

申请日：1994-02-24

申请人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

发明人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/22 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2226 ,  H01S5/223

摘要： The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer. In the present manufacturing method, a first impurity diffusion source film is applied on top of the semiconductor layers, an insulation film is applied on top of the first impurity diffusion source film, two layers consisting of the first impurity diffusion source film and insulation film are removed respectively into a stripe shape except for the areas of the semiconductor layers in which impurities are to be diffused, a diffusion protect film to be etched selectively with respect to the insulation film is formed on the surfaces of the semiconductor layers and two layers, an impurity is thermally diffused from the first impurity diffusion source film, a diffusion protect film is etched selectively with respect to the insulation film, and a second impurity is diffused with the insulation film as a mask.

摘要翻译： 该方法适用于半导体激光器件的制造，该半导体激光器件包括半导体衬底和在半导体衬底上依次堆叠在一起的多个半导体层，半导体层至少包括第一覆盖层; 介于一对光波导层之间的有源层和第二覆层。 在本制造方法中，将第一杂质扩散源膜施加在半导体层的顶部，在第一杂质扩散源膜的顶部施加绝缘膜，由第一杂质扩散源膜和绝缘膜构成的两层 除去杂质要扩散的半导体层的区域以外的条纹状，在半导体层和两层的表面上形成相对于绝缘膜选择性地蚀刻的扩散保护膜， 杂质从第一杂质扩散源膜热扩散，相对于绝缘膜选择性地蚀刻扩散保护膜，第二杂质以绝缘膜作为掩模扩散。

公开(公告)号：US5563901A

公开(公告)日：1996-10-08

申请号：US420822

申请日：1995-04-12

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama

IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/18 ,  H01S5/42 ,  H01S3/19

CPC分类号： H01S5/42 ,  H01S5/18

摘要： In a semiconductor laser array in which a semiconductor laser element having a horizontal-direction cavity, and plural outer inclined reflecting mirrors capable of reflecting laser light projected from the semiconductor laser element along a specific direction are integrated on a semiconductor substrate in a monolithic form, these outer inclined reflecting mirrors are positioned adjacent to each other, and also are arranged in such a manner that a distance between the adjoining horizontal-direction cavities becomes longer while being located apart from said outer inclined reflecting mirrors.

摘要翻译： 在半导体激光器阵列中，具有水平方向腔的半导体激光器元件和能够反射沿着特定方向从半导体激光元件投影的激光的多个外倾斜反射镜以整体形式集成在半导体衬底上， 这些外倾斜反射镜彼此相邻地定位，并且还布置成使得相邻的水平方向空腔之间的距离变得更长，同时与所述外倾斜反射镜分开。

公开(公告)号：US5253265A

公开(公告)日：1993-10-12

申请号：US832053

申请日：1992-02-06

申请人： Yasuji Seko ,  Kiichi Ueyanagi ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki

发明人： Yasuji Seko ,  Kiichi Ueyanagi ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/343 ,  H01S3/19

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/2059 ,  H01S5/3432

摘要： A semiconductor laser device having an active layer which is comprised of a quantum well layer formed of a mixed crystal material, and barrier layers provided on both sides of the quantum well layer in such a manner as to sandwich the same, is characterized in that Ge is thermally diffused in a portion of the active layer to disorder the quantum well layer and the barrier layers at that portion so as to form a non-light-emitting area with a low refractive index, while the quantum well layer and the barrier layers at a portion where Ge is not diffused is formed as a refractive index waveguide which is a light-emitting area.

摘要翻译： 具有由混合晶体材料形成的量子阱层的有源层和以夹着该量子阱层的方式设置在量子阱层的两侧的势垒层的半导体激光器件的特征在于Ge 在有源层的一部分中热扩散以使该部分处的量子阱层和阻挡层紊乱，以便形成具有低折射率的非发光区域，而量子阱层和阻挡层在 Ge不被扩散的部分形成为作为发光区域的折射率波导管。

公开(公告)号：US06839524B2

公开(公告)日：2005-01-04

申请号：US10246039

申请日：2002-09-17

申请人： Shoji Yamaguchi ,  Mario Fuse ,  Hideki Fukunaga ,  Tetsuya Kimura

发明人： Shoji Yamaguchi ,  Mario Fuse ,  Hideki Fukunaga ,  Tetsuya Kimura

IPC分类号： B41J3/54 ,  B41J2/475 ,  B41J29/00 ,  G03G5/00 ,  G03G21/04 ,  H04N1/23 ,  H04N1/32 ,  H04N1/40 ,  G03G15/04 ,  G03G15/22 ,  H04N1/034

CPC分类号： H04N1/32144 ,  G03G21/043 ,  G03G2215/00797 ,  G03G2215/00801 ,  H04N2201/3271

摘要： An image forming apparatus can form an image of a high-precision security information for anti-reproduction. A photosensitive material-coated area in a recording paper is exposed with an exposure unit to form an image of a high-precision security information. Since the image of the security information is thus formed by exposing the photosensitive material, it can be formed as an image incapable of reproduction.