摘要:
The amount of dust particles deposited on a semiconductor wafer during plasma etching or CVD in manufacturing a semiconductor integrated circuit is decreased by second plasma generating electrode 28 disposed around a lower electrode 15 in a plasma etching chamber 4a. High frequency voltage is applied to the second plasma generating electrode 18 just before the stop of plasma discharge to form a sub-plasma of high density along the outer periphery of the lower electrode 15, there is formed a sub-potential distribution acting to push out negatively charged dust particles stagnating near the main surface of a semiconductor substrate 7 toward the outer periphery of the wafer. The negatively charged dust particles thus pushed out from the vicinity of the main surface of the wafer 7 are moved to the second plasma generating electrode 28 and exhausted by a vacuum pump through an exhaust port 25.
摘要:
A developing paper having an image receiving dye layer containing a plasticizing agent on a substrate, the plasticizing agent including a solid plasticizing agent which is solid in the application temperature and a liquid plasticizing agent which is liquid in the application temperature. Since the developing paper contains a plasticizing agent including a liquid plasticizing agent and a solid plasticizing agent, the developing paper has an excellent light resistance. Moreover, since the plasticizing agent contains a liquid plasticizing agent and a solid plasticizing agent, there is no danger of precipitation of the plasticizing agent from the surface of the developing paper. Furthermore, the developing paper containing the aforementioned plasticizing agent enables to obtain a desirable plasticizing effect.
摘要:
A semiconductor device, such as a dynamic RAM, and method of making it. A number of stacked cell capacitors are placed at a prescribed spacing in an alignment direction on top of a p.sup.- -type silicon substrate (1). Each capacitor has a nearly perpendicular cylindrical lower electrode (cylindrical polysilicon layer (96)), a dielectric film (silicon nitride film (77)), and upper electrode (plate electrode (78) made of polysilicon). The spacing in the alignment direction is smaller than the inner diameter of the lower electrode.