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公开(公告)号：US20060205106A1
公开(公告)日：2006-09-14
申请号：US11208740
申请日：2005-08-23
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
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2.发明授权公开(公告)号：US07402449B2
公开(公告)日：2008-07-22
申请号：US11208740
申请日：2005-08-23
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
摘要翻译： 在半导体集成电路（CMOS等）和微机器单片集成在半导体基板上的集成MEMS的制造技术中，能够制造集成MEMS而不使用与正常制造不同的特殊工艺的技术 提供了半导体集成电路的技术。 通过使用CMOS集成电路工艺与集成电路一起形成MEMS结构。 例如，当形成加速度传感器时，通过使用CMOS互连技术形成由可移动质量块，弹性梁和固定梁构成的结构。 此后，通过使用CMOS工艺蚀刻层间电介质等以形成空腔。 然后，用电介质密封蚀刻中使用的细孔。
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3.发明授权公开(公告)号：US08129802B2
公开(公告)日：2012-03-06
申请号：US12216359
申请日：2008-07-02
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
摘要翻译： 在半导体集成电路（CMOS等）和微机器单片集成在半导体基板上的集成MEMS的制造技术中，能够制造集成MEMS而不使用与正常制造不同的特殊工艺的技术 提供了半导体集成电路的技术。 通过使用CMOS集成电路工艺与集成电路一起形成MEMS结构。 例如，当形成加速度传感器时，通过使用CMOS互连技术形成由可移动质量块，弹性梁和固定梁构成的结构。 此后，通过使用CMOS工艺蚀刻层间电介质等以形成空腔。 然后，用电介质密封蚀刻中使用的细孔。
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4.发明申请公开(公告)号：US20090064785A1
公开(公告)日：2009-03-12
申请号：US12216359
申请日：2008-07-02
IPC分类号： G01P15/125
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
摘要翻译： 在半导体集成电路（CMOS等）和微机器单片集成在半导体基板上的集成MEMS的制造技术中，能够制造集成MEMS而不使用与正常制造不同的特殊工艺的技术 提供了半导体集成电路的技术。 通过使用CMOS集成电路工艺与集成电路一起形成MEMS结构。 例如，当形成加速度传感器时，通过使用CMOS互连技术形成由可移动质量块，弹性梁和固定梁构成的结构。 此后，通过使用CMOS工艺蚀刻层间电介质等以形成空腔。 然后，用电介质密封蚀刻中使用的细孔。
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公开(公告)号：US20090049911A1
公开(公告)日：2009-02-26
申请号：US12285660
申请日：2008-10-10
IPC分类号： G01P15/125
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2201/014 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
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公开(公告)号：US20070036399A1
公开(公告)日：2007-02-15
申请号：US10563962
申请日：2003-08-13
申请人： Takafumi Matsumura , Ichiro Osaka , Yuichi Kashimura , Takafumi Miyatake , Akio Nagasaka , Naoto Miura
发明人： Takafumi Matsumura , Ichiro Osaka , Yuichi Kashimura , Takafumi Miyatake , Akio Nagasaka , Naoto Miura
IPC分类号： G06K9/00
CPC分类号： A61B5/1172 , G06K9/00013 , G06K9/00026 , G06K2009/0006 , G06K2009/00932 , G07C9/00158
摘要： In a personal identification device using blood vessel patterns, means capable of downsizing the device is especially provided. The personal identification device comprises an infrared ray source and a light receiving element row containing a plurality of light receiving elements. In personal identification, a finger is passed over the light receiving element row. An image containing a two-dimensional blood vessel pattern of the finger is created from an output of the light receiving element row and displacement information of the passing finger. The blood vessel pattern thus obtained is checked for a match with a previously registered pattern to perform the personal identification. The device can be downsized and can be easily mounted in a place having a limited mounting space, such as in cars and cell phones.
摘要翻译： 在使用血管图案的个人识别装置中，特别提供能够使装置小型化的装置。 个人识别装置包括红外线源和包含多个光接收元件的光接收元件列。 在个人识别中，手指通过光接收元件列。 从光接收元件列的输出和通过的手指的位移信息产生包含手指的二维血管图案的图像。 检查由此获得的血管图案与先前登记的图案的匹配以进行个人识别。 该装置可以小型化并且可以容易地安装在具有有限安装空间的地方，例如在汽车和手机中。
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公开(公告)号：US06968283B2
公开(公告)日：2005-11-22
申请号：US10848166
申请日：2004-05-19
CPC分类号： G01F1/6965 , G01F1/696 , G01F1/699
摘要： A gas flow meter having a gas flow detection circuit for detecting a current flowing through a resistor installed in a gas passage and a voltage generated across the resistor and outputting a voltage signal representing a gas flow passing through the gas passage; a noise reduction circuit for reducing external noise; and a digital adjusting circuit for digitally adjusting a signal representing the detected gas flow and outputting the adjusted signal; wherein a voltage signal based on the signal adjusted by the digital adjusting circuit is output.
摘要翻译： 一种气体流量计，其具有用于检测流过安装在气体通道中的电阻器的电流的气体流量检测电路和跨过电阻器产生的电压，并输出表示通过气体通道的气流的电压信号; 用于减少外部噪声的降噪电路; 以及数字调节电路，用于数字调节表示检测到的气流的信号并输出调整后的信号; 其中输出基于由数字调节电路调节的信号的电压信号。
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8.发明申请Sensor mounting structure and semiconductor pressure sensor for motor vehicles 审中-公开汽车传感器安装结构和半导体压力传感器公开(公告)号：US20050028585A1
公开(公告)日：2005-02-10
申请号：US10942819
申请日：2004-09-17
CPC分类号： G01L19/003 , G01L19/0007
摘要： To provide a sensor mounting structure which enables mounting an automotive sensor directly to the wall section of a part to be detected, without using screws, and also mounting a pressure detector directly to a pressure air passage without using a pressure inlet pipe. The non-circular sensor mounting hole is provided for inserting a part of the sensor housing into the wall section of the part to be detected. In the sensor housing the first locking portion (pawl) and the second locking portion (flange) are integrally formed by molding. The housing 1 is allowed to be inserted into the mounting hole under the condition that the pawl is directed to a specific orientation, and, after insertion, is turned through a specific angle. Therefore the pawl is engaged on the inside surface of the wall section. The flange is engaged on the outside surface of the wall section. The pawl and the flange are designed to hold the wall section of the part to be detected, thereby mounting the sensor. The projection of the hook is engaged with the recess provided in the sensor housing 1, thus locking the sensor from turning.
摘要翻译： 为了提供一种传感器安装结构，其能够将汽车传感器直接安装在待检测部件的壁部分上而不使用螺钉，并且还可以在不使用压力入口管的情况下将压力检测器直接安装到压力空气通道。 非圆形传感器安装孔用于将传感器壳体的一部分插入待检测部件的壁部。 在传感器壳体中，第一锁定部分（棘爪）和第二锁定部分（凸缘）通过模制一体形成。 允许壳体1在棘爪朝向特定取向的状态下插入到安装孔中，并且在插入之后被转过特定角度。 因此，棘爪接合在壁部的内表面上。 凸缘接合在壁部分的外表面上。 棘爪和法兰被设计成保持待检测部件的壁部分，从而安装传感器。 钩的突起与设置在传感器壳体1中的凹部接合，从而锁定传感器不转动。
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9.发明授权Gas flow rate measuring device having an integrated chip temperature sensor and adjustment processing circuit on common chip 有权气体流量测量装置具有集成芯片温度传感器和共同芯片上的调整处理电路公开(公告)号：US06769298B2
公开(公告)日：2004-08-03
申请号：US10124370
申请日：2002-04-18
IPC分类号： G01F168
CPC分类号： G01F1/696 , F02D41/187 , F02D2041/2072
摘要： A flow rate signal analog-digital conversion circuit 30, an adjustment processing circuit 40 and a chip temperature sensor circuit 60 are disposed a single semiconductor chip 100 to form an integrated circuit, and a chip temperature signal in a form of digital signal outputted from the chip temperature sensor circuit 60 is inputted into the adjustment processing circuit 40 in which correction reducing temperature dependent error in a series of signal processing circuits is performed. Thereby, a board temperature dependent error in a gas flow rate measuring device can be reduced in which adjustment is performed for digital signals.
摘要翻译： 流量信号模拟数字转换电路30，调整处理电路40和芯片温度传感器电路60设置在单个半导体芯片100上以形成集成电路，并且以从数字信号的形式输出的芯片温度信号 芯片温度传感器电路60被输入到执行一系列信号处理电路中的校正降低温度相关误差的调整处理电路40中。 因此，可以减少对数字信号进行调整的气体流量测量装置中的板温度相关误差。
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10.发明申请Magnetic Field Angle Measurement Apparatus, Rotation Angle Measurement Apparatus, and Rotation Machine, System, Vehicle, and Vehicle Drive Apparatus Each Using Same Rotation Angle Measurement Apparatus 审中-公开磁场角测量装置，旋转角度测量装置和旋转机，系统，车辆和车辆驱动装置，每个使用相同的旋转角度测量装置公开(公告)号：US20130264915A1
公开(公告)日：2013-10-10
申请号：US13992935
申请日：2011-12-20
CPC分类号： G01B7/30 , B62D5/0484 , B62D5/049 , G01D5/145 , H02K11/215
摘要： In a rotation angle measurement apparatus using a bridge configuration of a magneto-resistance element, a correct angle is not output when a fault occurs. For this reason, there is a problem in which an upper-layer system using the same is broken down. However, in order to solve this problem, there is provided a rotation angle measurement apparatus including a SIN bridge and a COS bridge each of which includes a magneto-resistance element and a detection unit, wherein the detection unit outputs an angle signal based on a signal output from a normal half bridge when a fault occurs in any one of respective half bridges of the COS bridge or the SIN bridge.
摘要翻译： 在使用磁阻元件的桥式结构的旋转角度测量装置中，当故障发生时，不输出正确的角度。 因此，存在使用其的上层系统被分解的问题。 然而，为了解决这个问题，提供了一种包括SIN桥和COS桥的旋转角测量装置，每个都包括磁阻元件和检测单元，其中检测单元输出基于 当COS桥或SIN桥的各个半桥中的任一个发生故障时，从正常半桥输出信号。
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