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1.发明授权公开(公告)号：US08129802B2
公开(公告)日：2012-03-06
申请号：US12216359
申请日：2008-07-02
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
摘要翻译： 在半导体集成电路（CMOS等）和微机器单片集成在半导体基板上的集成MEMS的制造技术中，能够制造集成MEMS而不使用与正常制造不同的特殊工艺的技术 提供了半导体集成电路的技术。 通过使用CMOS集成电路工艺与集成电路一起形成MEMS结构。 例如，当形成加速度传感器时，通过使用CMOS互连技术形成由可移动质量块，弹性梁和固定梁构成的结构。 此后，通过使用CMOS工艺蚀刻层间电介质等以形成空腔。 然后，用电介质密封蚀刻中使用的细孔。
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2.发明申请公开(公告)号：US20090064785A1
公开(公告)日：2009-03-12
申请号：US12216359
申请日：2008-07-02
IPC分类号： G01P15/125
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
摘要翻译： 在半导体集成电路（CMOS等）和微机器单片集成在半导体基板上的集成MEMS的制造技术中，能够制造集成MEMS而不使用与正常制造不同的特殊工艺的技术 提供了半导体集成电路的技术。 通过使用CMOS集成电路工艺与集成电路一起形成MEMS结构。 例如，当形成加速度传感器时，通过使用CMOS互连技术形成由可移动质量块，弹性梁和固定梁构成的结构。 此后，通过使用CMOS工艺蚀刻层间电介质等以形成空腔。 然后，用电介质密封蚀刻中使用的细孔。
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3.发明授权公开(公告)号：US07402449B2
公开(公告)日：2008-07-22
申请号：US11208740
申请日：2005-08-23
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
摘要翻译： 在半导体集成电路（CMOS等）和微机器单片集成在半导体基板上的集成MEMS的制造技术中，能够制造集成MEMS而不使用与正常制造不同的特殊工艺的技术 提供了半导体集成电路的技术。 通过使用CMOS集成电路工艺与集成电路一起形成MEMS结构。 例如，当形成加速度传感器时，通过使用CMOS互连技术形成由可移动质量块，弹性梁和固定梁构成的结构。 此后，通过使用CMOS工艺蚀刻层间电介质等以形成空腔。 然后，用电介质密封蚀刻中使用的细孔。
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公开(公告)号：US20060205106A1
公开(公告)日：2006-09-14
申请号：US11208740
申请日：2005-08-23
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
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公开(公告)号：US07325457B2
公开(公告)日：2008-02-05
申请号：US11492961
申请日：2006-07-26
IPC分类号： G01L9/12
CPC分类号： G01L9/0073 , B60C23/0408 , G01D5/2417 , G01L9/12 , G01L27/007
摘要： A sensor and sensor module with small power consumption and high reliability are disclosed. The sensor includes a capacitor having a capacitance varying with a physical quantity, a capacitance-voltage conversion circuit for converting the capacitance of the capacitor into a voltage, and a control signal generation circuit for generating a plurality of control signals. The capacitor has a frequency-capacitance characteristic with a resonant frequency. In a measurement of the physical quantity, the capacitance of the capacitor is measured with one of the control signals having a first frequency which is much higher or much lower than the resonant frequency. In a self-diagnosis of the sensor, the capacitance of the capacitor is measured with another one of the control signals having a second frequency which is equal or close to the resonant frequency.
摘要翻译： 公开了具有小功耗和高可靠性的传感器和传感器模块。 传感器包括具有物理量变化的电容的电容器，用于将电容器的电容转换为电压的电容 - 电压转换电路，以及用于产生多个控制信号的控制信号产生电路。 电容器具有谐振频率的频率 - 电容特性。 在物理量的测量中，电容器的电容被测量，其中一个控制信号具有比谐振频率高得多或低得多的第一频率。 在传感器的自诊断中，电容器的电容用另一个控制信号测量，其中第二频率等于或接近谐振频率。
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公开(公告)号：US20070068266A1
公开(公告)日：2007-03-29
申请号：US11492961
申请日：2006-07-26
IPC分类号： G01L9/12
CPC分类号： G01L9/0073 , B60C23/0408 , G01D5/2417 , G01L9/12 , G01L27/007
摘要： A sensor and sensor module with small power consumption and high reliability are disclosed. The sensor includes a capacitor having a capacitance varying with a physical quantity, a capacitance-voltage conversion circuit for converting the capacitance of the capacitor into a voltage, and a control signal generation circuit for generating a plurality of control signals. The capacitor has a frequency-capacitance characteristic with a resonant frequency. In a measurement of the physical quantity, the capacitance of the capacitor is measured with one of the control signals having a first frequency which is much higher or much lower than the resonant frequency. In a self-diagnosis of the sensor, the capacitance of the capacitor is measured with another one of the control signals having a second frequency which is equal or close to the resonant frequency.
摘要翻译： 公开了具有小功耗和高可靠性的传感器和传感器模块。 传感器包括具有物理量变化的电容的电容器，用于将电容器的电容转换为电压的电容 - 电压转换电路，以及用于产生多个控制信号的控制信号产生电路。 电容器具有谐振频率的频率 - 电容特性。 在物理量的测量中，电容器的电容被测量，其中一个控制信号具有比谐振频率高得多或低得多的第一频率。 在传感器的自诊断中，电容器的电容用另一个控制信号测量，其中第二频率等于或接近谐振频率。
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公开(公告)号：US20090049911A1
公开(公告)日：2009-02-26
申请号：US12285660
申请日：2008-10-10
IPC分类号： G01P15/125
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81C2201/014 , B81C2203/0714 , B81C2203/0742
摘要： In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
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公开(公告)号：US08581354B2
公开(公告)日：2013-11-12
申请号：US11697202
申请日：2007-04-05
申请人： Tsukasa Fujimori , Yuko Hanaoka , Hiroshi Fukuda
发明人： Tsukasa Fujimori , Yuko Hanaoka , Hiroshi Fukuda
IPC分类号： H01L29/84
CPC分类号： B81B7/0058 , B81B2201/0235 , B81B2201/0264 , B81B2207/015 , B81C2203/0136
摘要： An object of the present invention is to enhance the reliability of an MEMS sensor formed on a semiconductor integrated circuit device. To achieve this object, a semiconductor device of the present invention comprises: a semiconductor integrated circuit device; a lower passivation film of silicon nitride, etc. . . . formed on the semiconductor integrated circuit device and having high moisture resistance and high chemical resistance; a MEMS portion formed on the lower passivation film and including a cavity 12; and an upper passivation film 11 formed on the top surface of the MEMS portion such that the MEMS portion is hermetically sealed by the upper and lower passivation films.
摘要翻译： 本发明的目的是提高形成在半导体集成电路器件上的MEMS传感器的可靠性。 为了实现该目的，本发明的半导体器件包括：半导体集成电路器件; 氮化硅的下钝化膜等。 。 。 形成在半导体集成电路器件上，具有高耐湿性和高耐化学腐蚀性; 形成在下钝化膜上并包括空腔12的MEMS部分; 以及形成在MEMS部分的顶表面上的上钝化膜11，使得MEMS部分被上下钝化膜气密密封。
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9.发明申请Manufacturing method of MEMS structures and manufacturing method of MEMS structures with semiconductor device 有权MEMS结构的制造方法和具有半导体器件的MEMS结构的制造方法公开(公告)号：US20070249082A1
公开(公告)日：2007-10-25
申请号：US11698023
申请日：2007-01-26
申请人： Yuko Hanaoka , Tsukasa Fujimori , Hiroshi Fukuda
发明人： Yuko Hanaoka , Tsukasa Fujimori , Hiroshi Fukuda
CPC分类号： B81C1/00246 , B81C2203/0735 , G01L9/0042 , G01L9/0073 , H01L21/32053
摘要： The objects of the present invention are to form MEMS structures of which stress is controlled while maintaining the performance of high-performance LSI, to integrate MEMS Structures and LSI on a single chip, to electrically and chemically protect the MEMS structure and to reduce the stress of the whole movable part of the MEMS structure. To achieve the above objects, a silicide film formable at a low temperature is used for the MEMS structure. The temperature at the silicide film deposition T1 is selected optionally with reference the heat treatment temperature T2 and the pseudo-crystallization temperature T3. T2, the temperature of manufacturing process after the silicide film deposition, is determined does not cause the degradation of the characteristics of the high-performance LSI indispensable. Thus, the residual stress of the MEMS structures may be controlled.
摘要翻译： 本发明的目的是形成在保持高性能LSI的性能的同时控制应力的MEMS结构，将MEMS结构和LSI集成在单个芯片上，以电化学和化学保护MEMS结构并降低应力 的MEMS结构的整个可移动部分。 为了实现上述目的，在MEMS结构中使用了可在低温下形成的硅化物膜。 可选地参考热处理温度T 2和假结晶温度T 3来选择硅化物膜沉积T 1处的温度。 T 2，硅化物膜沉积后的制造工艺的温度，不会导致高性能LSI的特性劣化不可缺少。 因此，可以控制MEMS结构的残余应力。
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公开(公告)号：US07670861B2
公开(公告)日：2010-03-02
申请号：US11698023
申请日：2007-01-26
申请人： Yuko Hanaoka , Tsukasa Fujimori , Hiroshi Fukuda
发明人： Yuko Hanaoka , Tsukasa Fujimori , Hiroshi Fukuda
IPC分类号： H01L21/00 , H01L21/44 , H01L21/461
CPC分类号： B81C1/00246 , B81C2203/0735 , G01L9/0042 , G01L9/0073 , H01L21/32053
摘要： The objects of the present invention are to form MEMS structures of which stress is controlled while maintaining the performance of high-performance LSI, to integrate MEMS Structures and LSI on a single chip, to electrically and chemically protect the MEMS structure and to reduce the stress of the whole movable part of the MEMS structure. To achieve the above objects, a silicide film formable at a low temperature is used for the MEMS structure. The temperature at the silicide film deposition T1 is selected optionally with reference the heat treatment temperature T2 and the pseudo-crystallization temperature T3. T2, the temperature of manufacturing process after the silicide film deposition, is determined does not cause the degradation of the characteristics of the high-performance LSI indispensable. Thus, the residual stress of the MEMS structures may be controlled.
摘要翻译： 本发明的目的是形成在保持高性能LSI的性能的同时控制应力的MEMS结构，将MEMS结构和LSI集成在单个芯片上，以电化学和化学保护MEMS结构并降低应力 的MEMS结构的整个可移动部分。 为了实现上述目的，在MEMS结构中使用了可在低温下形成的硅化物膜。 可选地参考热处理温度T2和假晶化温度T3来选择硅化物膜沉积T1处的温度。 T2，硅化物膜沉积后的制造工艺的温度被确定不会导致高性能LSI的特性劣化是不可缺少的。 因此，可以控制MEMS结构的残余应力。
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