公开(公告)号：US08642943B2

公开(公告)日：2014-02-04

申请号：US13640922

申请日：2010-12-03

申请人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

发明人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC分类号： H01L31/101 ,  H01L31/18 ,  H01L33/06

CPC分类号： H01L31/03046 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/1467 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

摘要翻译： 光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从 接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。 光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38 @ x @ 0.68）层和GaAs 1-ySby（0.25 @ y @ 0.73）层的对的层叠结构，并且在GaAs1-ySby InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

公开(公告)号：US08969851B2

公开(公告)日：2015-03-03

申请号：US12965660

申请日：2010-12-10

申请人： Hiroshi Inada ,  Yasuhiro Iguchi ,  Youichi Nagai ,  Hiroki Mori ,  Kouhei Miura

发明人： Hiroshi Inada ,  Yasuhiro Iguchi ,  Youichi Nagai ,  Hiroki Mori ,  Kouhei Miura

IPC分类号： H01L29/06 ,  H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm.

摘要翻译： 本发明提供了一种用于通过在从物体反射的近红外区域中接收光来捕获对象的图像的图像拾取装置。 图像拾取装置包括各自具有带隙波长为1.65至3.0μm的光接收层的半导体光接收元件。

公开(公告)号：US20130048838A1

公开(公告)日：2013-02-28

申请号：US13640922

申请日：2010-12-03

申请人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

发明人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC分类号： H01L31/101 ,  H01L31/18 ,  H01L33/06

CPC分类号： H01L31/03046 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/1467 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

摘要翻译： 光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从 接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。 光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38和nlE; x＆lt; lE; 0.68）层和GaAs1-ySby（0.25＆amp; nlE; y＆nlE; 0.73）层的层的叠层结构，并且在GaAs1 -ySby层，InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

公开(公告)号：US07875906B2

公开(公告)日：2011-01-25

申请号：US12163039

申请日：2008-06-27

申请人： Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

发明人： Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

IPC分类号： H01L31/107

CPC分类号： H01L27/14643 ,  H01L27/14694 ,  H01L31/101 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate 1, an N-containing InGaAs-based absorption layer 3 positioned above the InP substrate 1, a window layer 5 positioned above the N-containing InGaAs-based absorption layer 3, and an InGaAs buffer layer 4 positioned between the N-containing InGaAs-based absorption layer 3 and the window layer 5.

摘要翻译： 本发明提供了一种具有在近红外区域具有灵敏度并且抑制暗电流的含N的InGaAs基吸收层的光电检测器及其制造方法。 光电检测器设置有InP基板1，位于InP基板1上方的含有N的InGaAs基吸收层3，位于含N的InGaAs基吸收层3上方的窗口层5和InGaAs缓冲层4 位于含N的InGaAs基吸收层3和窗口层5之间。

公开(公告)号：US20090001412A1

公开(公告)日：2009-01-01

申请号：US12163039

申请日：2008-06-27

申请人： Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

发明人： Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

IPC分类号： H01L31/0336 ,  H01L31/18

CPC分类号： H01L27/14643 ,  H01L27/14694 ,  H01L31/101 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate 1, an N-containing InGaAs-based absorption layer 3 positioned above the InP substrate 1, a window layer 5 positioned above the N-containing InGaAs-based absorption layer 3, and an InGaAs buffer layer 4 positioned between the N-containing InGaAs-based absorption layer 3 and the window layer 5.

摘要翻译： 本发明提供了一种具有在近红外区域具有灵敏度并且抑制暗电流的含N的InGaAs基吸收层的光电检测器及其制造方法。 光电检测器设置有InP基板1，位于InP基板1上方的含有N的InGaAs基吸收层3，位于含N的InGaAs基吸收层3上方的窗口层5和InGaAs缓冲层4 位于含N的InGaAs基吸收层3和窗口层5之间。

公开(公告)号：US08513759B2

公开(公告)日：2013-08-20

申请号：US12906858

申请日：2010-10-18

申请人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

发明人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L27/146

CPC分类号： H01L27/1446 ,  H01L31/1035 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.

摘要翻译： 包括具有均匀尺寸和均匀形状的光电二极管的近红外线光电二极管阵列对于光电二极管之间的接收光的波长具有高选择性，并且借助于含有大量的高质量半导体晶体具有高灵敏度 的氮，制造光电二极管阵列的方法和光学测量系统。 在第一导电型或半绝缘半导体衬底1上形成具有多个开口的掩模层2的步骤，该开口设置在一维或二维中，并且选择性地生长多个半导体层3a，3b 和包括开口中的吸收层3b的3c。

公开(公告)号：US20130099203A1

公开(公告)日：2013-04-25

申请号：US13806585

申请日：2011-06-15

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/18 ,  H01L31/1844 ,  Y02E10/544

摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.

摘要翻译： 提供了一种光电检测器和制造该光检测器的方法，其中在从包括1.3μm到长波长侧的短波长侧的近红外区域上抑制了灵敏度的变化。 光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度 。 1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

公开(公告)号：US20120298957A1

公开(公告)日：2012-11-29

申请号：US13520007

申请日：2011-03-10

申请人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

发明人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14652 ,  H01L27/14694

摘要： The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

摘要翻译： 本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。 光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至 通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离， 在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

公开(公告)号：US20120217478A1

公开(公告)日：2012-08-30

申请号：US13505226

申请日：2011-05-19

申请人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

发明人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/1844

摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.

摘要翻译： 提供了一种半导体器件和光学传感器装置，每个具有减小的暗电流，并且在近红外线中向较长波长延伸的检测能力。 此外，提供了一种用于制造半导体器件的方法。 半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。 在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z≥-0.4x + 24.6。

公开(公告)号：US07508046B2

公开(公告)日：2009-03-24

申请号：US11709393

申请日：2007-02-21

申请人： Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

发明人： Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

IPC分类号： H01L31/0224

CPC分类号： H01L31/02165 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L31/022416 ,  H01L31/03046

摘要： A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.

摘要翻译： 具有抑制光串扰的机构的光电检测器包括设置在公共半导体衬底上的多个光电二极管，每个光电二极管包括在公共半导体衬底上外延生长并设有外延侧电极的吸收层。 每个光电二极管设置有至少一个环形或月牙形的外延侧电极，仅将引导到相应的光电二极管的入射光聚光的入射侧限制的聚光部分，以及放置在 与吸收层的光入射侧相对的一侧，允许从光入射侧进入的光容易地从光电二极管发射出。