公开(公告)号：US5788798A

公开(公告)日：1998-08-04

申请号：US605216

申请日：1996-05-31

申请人： Hiroshi Mabuchi ,  Takahiro Yoshiki ,  Naoki Matsumoto ,  Kyoichi Komachi ,  Shuta Kanayama ,  Toshiki Ebata

发明人： Hiroshi Mabuchi ,  Takahiro Yoshiki ,  Naoki Matsumoto ,  Kyoichi Komachi ,  Shuta Kanayama ,  Toshiki Ebata

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32211 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32238

摘要： A plasma processing apparatus carries out plasma processings such as etching, ashing and CVD on large substrates such as semiconductor device substrates and glass substrates for liquid crystal display panels, etc. The plasma processing apparatus having microwave generator 26, a microwave guide path 23, a microwave window 4 and a reaction room 2, etc., has a dielectric sheet 21 disposed to confront the microwave window 4 through a hollow area 20. The dielectric sheet is divided into multiple dielectric sheets 21a, 21b, and the microwave guide path 23a, 23b are connected to the divided dielectric sheets 21a, 21b. This simple structure enables the stable and uniform plasma processing on large substrates such as glass substrates for liquid crystal display panels.

摘要翻译： PCT No.PCT / JP95 / 01403 Sec。 371日期：1996年5月31日 102（e）日期1996年5月31日PCT提交1995年7月13日PCT公布。 第WO96 / 03019号公报 日期1996年2月1日等离子体处理装置在诸如半导体器件基板和用于液晶显示面板的玻璃基板等大型基板上进行蚀刻，灰化和CVD等等离子体处理。具有微波发生器26，微波 引导路径23，微波窗4和反应室2等具有设置成通过中空区域20面对微波窗口4的电介质片21.电介质片被分成多个电介质片21a，21b， 微波引导路径23a，23b连接到分隔电介质片21a，21b。 这种简单的结构能够在诸如液晶显示面板的玻璃基板等大基板上进行稳定均匀的等离子体处理。

公开(公告)号：US4601095A

公开(公告)日：1986-07-22

申请号：US361070

申请日：1982-03-23

申请人： Kenichi Kikuchi ,  Michitomo Iiyama ,  Toshiki Ebata ,  Hideki Hayashi

发明人： Kenichi Kikuchi ,  Michitomo Iiyama ,  Toshiki Ebata ,  Hideki Hayashi

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L29/10 ,  H01L29/47 ,  H01L29/812

CPC分类号： H01L29/66878 ,  H01L21/28 ,  H01L21/28587 ,  H01L29/1029 ,  H01L29/475 ,  H01L29/812 ,  Y10S438/909 ,  Y10S438/918 ,  Y10S438/951

摘要： A process for fabricating a Schottky-barrier gate field effect transistor, consists of forming an active layer of one electrically conductive type semiconductor crystal on one surface of a high resistivity or semi-insulating semiconductor crystal substrate, the active layer having a first active layer whose thickness and carrier concentration are so chosen as to give a predetermined value of pinch-off voltage and a second active layer having a carrier concentration which is substantially equal to that of the first active layer and having a larger thickness than that of the first active layer and provided on both sides of the first active layer; the first shallow active layer is provided with a Schottky-barrier gate electrode correctly positioned on the surface part and the second thick active layer is provided with a source electrode and drain electrode on the surface part.

摘要翻译： 制造肖特基势垒栅场效应晶体管的工艺包括在高电阻率或半绝缘半导体晶体衬底的一个表面上形成一个导电型半导体晶体的有源层，该有源层具有第一有源层， 选择厚度和载流子浓度以给出预定的夹断电压值，以及具有基本上等于第一有源层的载流子浓度并且具有比第一有源层的厚度大的厚度的第二有源层 并设置在第一有源层的两侧; 第一浅有源层设置有正确位于表面部分上的肖特基势垒栅极，并且第二厚有源层在表面部分上设置有源电极和漏电极。

公开(公告)号：US07901509B2

公开(公告)日：2011-03-08

申请号：US11549968

申请日：2006-10-16

申请人： John Mariner ,  Ajit Sane ,  Toshiki Ebata ,  Marc Schaepkens ,  Xiang Liu ,  Wei Fan

发明人： John Mariner ,  Ajit Sane ,  Toshiki Ebata ,  Marc Schaepkens ,  Xiang Liu ,  Wei Fan

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4586 ,  H01L21/67103

摘要： A heating apparatus for regulating/controlling the surface temperature of a substrate is provided. At least a thermal pyrolytic graphite (TPG) layer is embedded in the heater to diffuse the temperature difference of the various components in the heating apparatus and provide temporal and spatial control of the surface temperature of the substrate, for a relatively uniform substrate temperature with the difference between the maximum and minimum temperature points on the substrate of less than 10° C.

摘要翻译： 提供一种用于调节/控制基板的表面温度的加热装置。 至少一个热解石墨（TPG）层被嵌入在加热器中以扩散加热装置中的各种组分的温度差，并提供衬底的表面温度的时间和空间控制，对于相对均匀的衬底温度， 基板上最大和最小温度点之间的差值小于10°C

公开(公告)号：US4757033A

公开(公告)日：1988-07-12

申请号：US846090

申请日：1986-03-31

申请人： Toshiki Ebata

发明人： Toshiki Ebata

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L29/417 ,  H01L21/441

CPC分类号： H01L21/76897 ,  H01L21/28575 ,  H01L21/76802 ,  H01L23/485 ,  H01L29/41725 ,  H01L2924/0002

摘要： The semiconductor device includes a semiconductor substrate, a two-layer insulating film formed on the substrate and constituted by upper and lower insulating layers made of insulating materials different, in chemical properties, from each other, respectively, an electrode and a first level interconnection such that the electrode and the first level interconnection are embedded in an opening formed on the two-layer insulating film.

公开(公告)号：US20080066676A1

公开(公告)日：2008-03-20

申请号：US11549968

申请日：2006-10-16

申请人： John Mariner ,  Ajit Sane ,  Toshiki Ebata ,  Marc Schaepkens ,  Xiang Liu ,  Wei Fan

发明人： John Mariner ,  Ajit Sane ,  Toshiki Ebata ,  Marc Schaepkens ,  Xiang Liu ,  Wei Fan

IPC分类号： C23C16/00

CPC分类号： C23C16/4586 ,  H01L21/67103

摘要： A heating apparatus for regulating/controlling the surface temperature of a substrate is provided. At least a thermal pyrolytic graphite (TPG) layer is embedded in the heater to diffuse the temperature difference of the various components in the heating apparatus and provide temporal and spatial control of the surface temperature of the substrate, for a relatively uniform substrate temperature with the difference between the maximum and minimum temperature points on the substrate of less than 10° C.

摘要翻译： 提供一种用于调节/控制基板的表面温度的加热装置。 至少一个热解石墨（TPG）层嵌入在加热器中以扩散加热装置中的各种组分的温度差，并提供衬底的表面温度的时间和空间控制，对于相对均匀的衬底温度， 基板上最大和最小温度点之间的差值小于10°C

公开(公告)号：US20060165994A1

公开(公告)日：2006-07-27

申请号：US11175236

申请日：2005-07-06

申请人： George Dalakos ,  Toshiki Ebata ,  Patricia Hubbard ,  Charles Iacovangelo ,  Jeffrey Lennartz ,  Henry Marek ,  Yuji Morikawa ,  Xiang Liu

发明人： George Dalakos ,  Toshiki Ebata ,  Patricia Hubbard ,  Charles Iacovangelo ,  Jeffrey Lennartz ,  Henry Marek ,  Yuji Morikawa ,  Xiang Liu

IPC分类号： B32B9/00

CPC分类号： C04B41/009 ,  C04B41/5031 ,  C04B41/5063 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C14/0617 ,  C23C14/22 ,  C23C16/303 ,  C23C16/4404 ,  C23C16/4581 ,  C23C16/513 ,  H01L21/68757 ,  Y10T428/30 ,  C04B41/4529 ,  C04B41/4531 ,  C04B41/5064 ,  C04B41/5057 ,  C04B41/522 ,  C04B35/522 ,  C04B35/583

摘要： Disclosed herein is a crack-free protective coating comprising at least one of aluminum nitride, aluminum oxide, aluminum oxynitride or combinations thereof. Disclosed herein too is a method for making an article comprising disposing a protective coating comprising at least one of aluminum nitride, aluminum oxide, aluminum oxynitride or combinations thereof upon a substrate comprising pyrolytic boron nitride, pyrolytic graphite and/or carbon doped boron nitride.

摘要翻译： 本文公开了包含氮化铝，氧化铝，氮氧化铝或其组合中的至少一种的无裂纹保护涂层。 本文还公开了一种制造制品的方法，包括将包含氮化铝，氧化铝，氮氧化铝或其组合中的至少一种的保护涂层设置在包含热解氮化硼，热解石墨和/或掺碳氮化硼的基板上。

公开(公告)号：US20060008676A1

公开(公告)日：2006-01-12

申请号：US11175237

申请日：2005-07-06

申请人： Toshiki Ebata ,  Yuji Morikawa

发明人： Toshiki Ebata ,  Yuji Morikawa

IPC分类号： B05D3/00 ,  B32B19/00

CPC分类号： C04B41/009 ,  C04B41/5031 ,  C04B41/5063 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C14/0617 ,  C23C14/22 ,  C23C16/303 ,  C23C16/4404 ,  C23C16/4581 ,  C23C16/513 ,  H01L21/68757 ,  Y10T428/30 ,  C04B41/4529 ,  C04B41/4531 ,  C04B41/5064 ,  C04B41/5057 ,  C04B41/522 ,  C04B35/522 ,  C04B35/583

摘要： Disclosed herein is a protective coating having a compressive stress of less than 280 Mpa, for devices to be used in a corrosive environment such as halogen containing gases or halogen plasma atmosphere, e.g., wafer supporting device for use in semi-conductor processing assemblies such as electrostatic chucks, heaters, etc. The protective coating in one embodiment is crack-free, with a compressive stress of less than 250 Mpa. It is deposited onto at least one surface of the device via an ion-plating process, in which the Ar flow is kept below 5 sccm, and one embodiment, at 0 sccm, for a crack-free protective layer.

摘要翻译： 本文公开了对于在诸如含卤素气体或卤素等离子体气氛的腐蚀性环境中使用的装置，例如用于半导体处理组件的晶片支撑装置，例如用于半导体处理组件的保护涂层，其具有小于280Mpa的压缩应力， 静电卡盘，加热器等。一个实施例中的保护涂层是无裂纹的，压缩应力小于250Mpa。 通过离子镀方法将Ar流保持在5sccm以下，一个实施方案以0sccm的形式沉积到装置的至少一个表面上，用于无裂纹的保护层。

公开(公告)号：US20110266274A1

公开(公告)日：2011-11-03

申请号：US12312755

申请日：2007-11-26

申请人： Toshiki Ebata ,  Sridhar R. Prasad ,  Ajay Rao ,  Takeshi Higuchi ,  Kensuke Fujimura ,  Akira Miyahara ,  Eric Witenberter

发明人： Toshiki Ebata ,  Sridhar R. Prasad ,  Ajay Rao ,  Takeshi Higuchi ,  Kensuke Fujimura ,  Akira Miyahara ,  Eric Witenberter

IPC分类号： H05B3/68

CPC分类号： H01L21/68757 ,  H01L21/67115 ,  H05B3/14

摘要： The current invention relates to a semiconductor wafer heater assembly having a frosted clear quartz material for the wafer susceptor (6) that is placed between the heater (8) and the wafer (7) such that at certain wavelengths of the emitted radiant energy from the heater (8), the frosted clear quartz material is ‘thermally transmissive’ to the thermal radiation from the infrared region. The heater assembly is characterized in that the top quartz plate or susceptor (6) on which the wafer (7) is supported is made of a material that is not “optically transmissive” but is more than 90% “thermally transmissive” to infrared emission that is shorter than 3.5 micrometer wavelength and having higher tolerance and mechanical strength than conventional clear quartz material.

摘要翻译： 本发明涉及一种半导体晶片加热器组件，其具有用于晶片基座（6）的磨砂透明石英材料，晶片基座（6）放置在加热器（8）和晶片（7）之间，使得在某些波长的辐射能量 加热器（8），磨砂透明石英材料对来自红外区域的热辐射是“热传导的”。 加热器组件的特征在于，其上支撑晶片（7）的顶部石英板或基座（6）由不是“光学透射”但对红外发射超过90％“热传导”的材料制成 短于3.5微米波长，并且具有比常规透明石英材料更高的公差和机械强度。

公开(公告)号：US4774200A

公开(公告)日：1988-09-27

申请号：US844477

申请日：1986-03-26

申请人： Shigeru Nakajima ,  Toshiki Ebata

发明人： Shigeru Nakajima ,  Toshiki Ebata

IPC分类号： H01L29/812 ,  H01L21/285 ,  H01L21/338 ,  H01L29/423 ,  H01L29/80

CPC分类号： H01L29/66878 ,  H01L21/28587 ,  H01L29/42316

摘要： A Schottky-gate field effect transistor comprises a substrate, an active layer formed in one surface of the substrate, a Schottky gate electrode in the form of an inverted trapezoid on the active layer. A heavily doped region is formed in the one surface of the substrate at each side of the inverted trapezoid Schottky gate electrode separately from the side edge of the bottom of the Schottky gate electrode by a certain distance but in self-alignment with the corresponding side edge of the top of the inverted trapezoid Schottky gate electrode. Source and drain electrodes are respectively formed on the heavily doped regions in ohmic contact thereto in such a manner that the edge of each of the source and drain electrodes close to Schottky gate electrode is in alignment with the corresponding side edge of the top of the inverted-trapezoid gate electrode.

摘要翻译： 肖特基栅场效应晶体管包括衬底，形成在衬底的一个表面中的有源层，在有源层上呈倒梯形形式的肖特基栅电极。 在反相梯形肖特基栅电极的每一侧的基板的一个表面中，与肖特基栅电极的底部的侧边缘分开地形成一个重掺杂区，距离相对于相应的边缘自对准 的倒梯形肖特基电极的顶部。 源电极和漏极电极分别形成在与其欧姆接触的重掺杂区域上，使得靠近肖特基栅电极的源电极和漏电极中的每一个的边缘与倒置的顶部的相应侧边缘对准 梯形栅电极。