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    Carbon material for electric double layer capacitor electrodes
    1.
    发明授权
    Carbon material for electric double layer capacitor electrodes 失效
    双层电容电极碳材料

    公开(公告)号：US07256157B2

    公开(公告)日：2007-08-14

    申请号：US10703635

    申请日：2003-11-10

    申请人： Hirotaka Tsuruya ,  Koichi Kanno ,  Hitoshi Sakamoto ,  Yuzuru Takahashi

    发明人： Hirotaka Tsuruya ,  Koichi Kanno ,  Hitoshi Sakamoto ,  Yuzuru Takahashi

    IPC分类号： C01B31/12

    CPC分类号： H01G9/155 ,  D01F9/145 ,  D01F9/15 ,  D01F9/16 ,  Y02E60/13

    摘要： A carbon material for electric double layer capacitor electrodes which is obtained by a heat treatment and an activation treatment of a material pitch having a softening point in a range of 150 to 350° C., a ratio of amounts by atom of hydrogen to carbon (H/C) in a range of 0.50 to 0.90 and a content of optically anisotropic components of 50% or greater. The material pitch is preferably a synthetic pitch obtained by polymerizing a condensed polycyclic hydrocarbon such as naphthalene, methylnaphthalene, anthracene, phenanthrene, acenaphthene, acenaphthylene and pyrene in the presence of an ultra-strong acid catalyst such as a hydrogen fluoride-boron trifluoride complex. Electric double layer capacitors having a high electrode density and a high electrostatic capacity per unit volume can be constructed using the carbon material.

    摘要翻译： 一种用于双电层电容电极的碳材料，其通过热处理和软化点在150至350℃范围内的材料沥青的活化处理，氢原子与碳原子的比例（ H / C）为0.50〜0.90，光学各向异性成分的含量为50％以上。 材料间距优选为在诸如氟化氢 - 三氟化硼络合物的超强酸催化剂存在下聚合诸如萘，甲基萘，蒽，菲，苊，苊和芘的缩合多环烃而获得的合成沥青。 可以使用碳材料来构造具有高电极密度和每单位体积的高静电容量的双电层电容器。

    ELECTRONIC SUBSTRATE AND AN ELECTRONIC APPARATUS
    6.
    发明申请
    ELECTRONIC SUBSTRATE AND AN ELECTRONIC APPARATUS 有权
    电子基板和电子设备

    公开(公告)号：US20140190738A1

    公开(公告)日：2014-07-10

    申请号：US14240348

    申请日：2012-08-15

    申请人： Hitoshi Sakamoto ,  Minoru Yoshikawa ,  Masaki Chiba ,  Kenichi Inaba ,  Arihiro Matsunaga

    发明人： Hitoshi Sakamoto ,  Minoru Yoshikawa ,  Masaki Chiba ,  Kenichi Inaba ,  Arihiro Matsunaga

    IPC分类号： H05K1/02

    CPC分类号： H05K1/021 ,  F28D15/0266 ,  G06F1/20 ,  H05K7/2029

    摘要： An electronic substrate 100D has a tabular base material 110 which can install a heater element 120 and the cooling structure that cools the heater element 120. An electronic substrate 100 can be plugged in/out in the case 200 in the direction which is almost parallel to the face of the base material 110. The cooling structure is installed on the tabular base material 110, and has the first heat radiation part 160D with a hollow shape and the heat transfer part 700. The first heat radiation part 160D with a hollow shape radiates the generated heat of the heater element 120 installed in the base material. The heat transfer part 700 transfers the generated heat of the heater element 120 to the first heat radiation part 160D. The first heat radiation part 160D has the first joint surface 165 formed along a face which is almost vertical to the insert and removal direction W of the base material 110. The first heat radiation part 160D is connected to the second radiation part 260B set up in the case 200 thermally through the first joint surface 165. As a result, the generated heat of the heater element can be radiated sufficiently.

    摘要翻译： 电子基板100D具有片状基材110，其可以安装加热元件120和冷却加热器元件120的冷却结构。电子基板100可以在壳体200中沿几乎平行于 基体材料110的表面。冷却结构安装在片状基材110上，并具有中空形状的第一散热部160D和传热部700.具有中空形状的第一散热部160D辐射 安装在基材中的加热器元件120产生的热量。 传热部700将发热元件120的发热传递到第一散热部160D。 第一散热部分160D具有沿着基本材料110的插入和移除方向W几乎垂直的面形成的第一接合表面165.第一散热部分160D连接到设置在第一辐射部分260B中的第二辐射部分260B 壳体200热穿过第一接合表面165.结果，可以充分地辐射加热器元件的产生的热量。

    Method and apparatus for production of metal film or the like
    8.
    发明授权
    Method and apparatus for production of metal film or the like 有权
    金属膜等的制造方法和装置

    公开(公告)号：US07923374B2

    公开(公告)日：2011-04-12

    申请号：US12471743

    申请日：2009-05-26

    申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

    发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

    IPC分类号： H01L21/302

    CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

    摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

    摘要翻译： 在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸附到基板上的前体中抽出Cl 2气体， 从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

    Process for producing silicon compound
    9.
    发明授权
    Process for producing silicon compound 有权
    硅化合物生产工艺

    公开(公告)号：US07776751B2

    公开(公告)日：2010-08-17

    申请号：US11919484

    申请日：2006-05-17

    申请人： Yoshiyuki Ooba ,  Hitoshi Sakamoto

    发明人： Yoshiyuki Ooba ,  Hitoshi Sakamoto

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： C23C16/4488 ,  C01B33/06 ,  C23C16/325 ,  C23C16/42 ,  H01L21/2807 ,  H01L21/28097 ,  H01L21/28518 ,  H01L31/032

    摘要： A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a member 11 to be etched, which is disposed within a chamber 1 and is formed of a material containing an element capable of forming a compound with Si, while keeping the member 11 at a relatively high temperature, to form a gas of a precursor 24, which is a compound of the material and the halogen; holding a substrate 3 accommodated within the chamber 1 at a relatively low temperature, with the Si interface of the substrate 3 being exposed, to adsorb the precursor 24 onto the Si interface of the substrate 3; and then allowing the radical of the halogen gas to act on the precursor 24 adsorbed onto the Si interface to reduce the precursor 24, thereby producing a compound of the material and Si.

    摘要翻译： 硅化合物的制造方法可以使步骤的数量最少化，并能在低温环境下形成所需化合物。 该方法包括：使卤素气体基团作用在要蚀刻的构件11上，该构件设置在室1内，并且由含有能够与Si形成化合物的元素的材料形成，同时保持构件11 在相对高的温度下形成作为该材料和卤素的化合物的前体24的气体; 在相对较低的温度下保持容纳在室1内的基板3，使基板3的Si界面露出，以将前体24吸附到基板3的Si界面上; 然后使卤素气体的基团作用于吸附在Si界面上的前体24上以还原前体24，从而产生该材料和Si的化合物。

    METAL FILM PRODUCTION APPARATUS AND METAL FILM PRODUCTION METHOD
    10.
    发明申请
    METAL FILM PRODUCTION APPARATUS AND METAL FILM PRODUCTION METHOD 审中-公开
    金属膜生产设备和金属膜生产方法

    公开(公告)号：US20100062181A1

    公开(公告)日：2010-03-11

    申请号：US12618130

    申请日：2009-11-13

    申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Yoshiyuki Ooba

    发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Yoshiyuki Ooba

    IPC分类号： C23C16/448 ,  C23C16/06

    CPC分类号： C23C16/52 ,  C23C16/14 ,  C23C16/4488

    摘要： A metal film production method supplies a source gas containing a halogen, such as a chlorine, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing to film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed. The temperature of the substrate is less than that of the etched member.Alternatively, a source gas is supplied to the interior of a chamber between a substrate and a copper plate member such that the source gas is gradually increased continuously from a flow rate of 0 to a predetermined flow rate to increase the particle size of the metal component, as copper gradually.

    摘要翻译： 金属膜制造方法将含有卤素如氯的源气体向室内供给，从而间歇地供给源气体，在基板上形成膜前体的Cu成分，同时抑制 蚀刻颗粒的相对增加。 因此，源气体在有助于成膜的等离子体颗粒的完全存在下被供给。 此外，源蚀刻气体以不用蚀刻颗粒蚀刻形成的Cu膜的状态供给。 因此，相对于成膜时间，Cu膜可靠地增加，以提高成膜速度。 基板的温度小于蚀刻部件的温度。 或者，将源气体供给到基板和铜板构件之间的室内部，使得源气体从0的流量连续地逐渐增加到预定流量，以增加金属部件的粒径 ，随着铜逐渐。