公开(公告)号：US06624044B2

公开(公告)日：2003-09-23

申请号：US09852690

申请日：2001-05-11

申请人： Hiroyasu Ito ,  Takafumi Arakawa ,  Masatoshi Kato

发明人： Hiroyasu Ito ,  Takafumi Arakawa ,  Masatoshi Kato

IPC分类号： H01L2176

CPC分类号： H01L29/66181 ,  H01L21/31055 ,  H01L21/763 ,  H01L27/10861

摘要： First, a trench of a semiconductor substrate is filled with a polysilicon film deposited on the surface of the semiconductor substrate. A selective thin film having etching selectivity with respect to the polysilicon film is formed on the polysilicon film. Then, the selective thin film is etched (etched back) so that a part of the selective thin film remains in a depression of the polysilicon film, as a self-aligning mask. The polysilicon film is further etched with the self-aligning mask, thereby forming a polysilicon embedded layer in the trench with a flat surface.

摘要翻译： 首先，半导体衬底的沟槽填充有沉积在半导体衬底的表面上的多晶硅膜。 在多晶硅膜上形成具有相对于多晶硅膜的蚀刻选择性的选择性薄膜。 然后，作为自对准掩模，选择性薄膜被蚀刻（回蚀刻），使得一部分选择性薄膜保持在多晶硅膜的凹陷中。 用自对准掩模进一步蚀刻多晶硅膜，从而在沟槽中形成具有平坦表面的多晶硅嵌入层。

公开(公告)号：US07037788B2

公开(公告)日：2006-05-02

申请号：US10786107

申请日：2004-02-26

申请人： Hiroyasu Ito ,  Masatoshi Kato ,  Takafumi Arakawa

发明人： Hiroyasu Ito ,  Masatoshi Kato ,  Takafumi Arakawa

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7811

摘要： By improving profile of impurity concentration in a channel portion of an FET or an IGBT of a trench gate type, variation of threshold value is lessened, and a destruction caused by current concentration is prevented while suppressing deterioration of cut-off characteristics. An island of a base region of p-type is formed in a semiconductor substrate of n-type by carrying out high acceleration ion implantation twice followed by annealing, so that the impurity concentration profile in a channel portion changes gradually in a depth direction. Accordingly, it is possible to lessen variation of the threshold value and to reduce pinch resistance while at the same time improving sub-threshold voltage coefficient and conductance characteristics.

摘要翻译： 通过改善FET或沟槽栅极型IGBT的沟道部分中的杂质浓度分布，可以减小阈值的变化，同时抑制截止特性劣化的电流集中的破坏。 通过进行高加速度离子注入两次然后退火，在n型半导体衬底中形成p型基区的岛，使得沟道部分中的杂质浓度分布在深度方向上逐渐变化。 因此，可以减小阈值的变化并减小钳位电阻，同时提高次阈值电压系数和电导特性。

公开(公告)号：US06448139B2

公开(公告)日：2002-09-10

申请号：US09875026

申请日：2001-06-07

申请人： Hiroyasu Ito ,  Takafumi Arakawa ,  Masatoshi Kato

发明人： Hiroyasu Ito ,  Takafumi Arakawa ,  Masatoshi Kato

IPC分类号： H01L21336

CPC分类号： H01L29/7813 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/945

摘要： A semiconductor substrate has a trench for forming a gate insulation film and a gate electrode therein, or an insulated isolation isolating a semiconductor element like a transistor from other elements. The trench is formed by anisotropic dry etching. After that, a shape of the trench is improved so that a bottom portion and an opening portion are rounded or tapered by a wet process using a mixed solution containing hydrofluoric acid and nitric acid. By modifying the shape of the trench, electrical characteristics of the trench are improved. For example, an oxide film formed in the trench has high quality, whereby a gate withstanding voltage is improved.

摘要翻译： 半导体衬底具有用于在其中形成栅极绝缘膜和栅电极的沟槽，或者与其他元件隔离半导体元件如晶体管的绝缘隔离。 沟槽由各向异性干蚀刻形成。 之后，使用含有氢氟酸和硝酸的混合溶液，通过湿法将沟槽的形状改善，使得底部和开口部分成圆形或锥形。 通过改变沟槽的形状，改善了沟槽的电特性。 例如，形成在沟槽中的氧化膜具有高质量，从而提高了栅极耐压。

公开(公告)号：US08375391B2

公开(公告)日：2013-02-12

申请号：US12560500

申请日：2009-09-16

申请人： Ichiro Bessho ,  Harumitsu Fujimori ,  Hiroyasu Ito

发明人： Ichiro Bessho ,  Harumitsu Fujimori ,  Hiroyasu Ito

IPC分类号： G06F9/46 ,  G06F15/16 ,  G06F3/12

CPC分类号： G06F11/32 ,  H04N1/00244 ,  H04N1/00347 ,  H04N1/32122 ,  H04N2201/0087 ,  H04N2201/0094 ,  H04N2201/3202

摘要： Whether a job execution instruction has been issued or not is determined. When it is determined that the job execution instruction has been issued, a job ID is issued. Contents of the job in accordance with the job execution instruction are checked. Then, whether the job is a Scan to USB memory job in an emulation mode or not is determined. When it is determined that the job is the Scan to USB memory job in the emulation mode, a sub job ID brought in correspondence with the issued job ID is issued.

摘要翻译： 确定作业执行指令是否被发出。 当确定已经发出作业执行指令时，发出作业ID。 检查根据作业执行指令的作业内容。 然后，确定作业是否处于仿真模式下的扫描到USB存储器作业。 当在仿真模式中确定作业是扫描到USB存储器作业时，发出与所发出的作业ID相对应带来的副作业ID。

公开(公告)号：US08135875B2

公开(公告)日：2012-03-13

申请号：US12131658

申请日：2008-06-02

申请人： Hiroyasu Ito

发明人： Hiroyasu Ito

IPC分类号： G06F3/00

CPC分类号： H04N1/00347 ,  H04N1/00408 ,  H04N1/00482 ,  H04N2201/0036 ,  H04N2201/0044 ,  H04N2201/0072 ,  H04N2201/0087 ,  H04N2201/0094

摘要： Determination is made whether acceptance of a job on a USB memory is permitted or not. When in a USB memory job acceptance permitted state, a USB memory job selection display process is executed. When in a USB memory job acceptance prohibited state, a USB memory plural load prohibition display process is executed. When in a USB memory job acceptance prohibited state, the relevant display screen is continuously provided. Therefore, the user is provided with the relevant display screen to be prompted confirmation of the loading of a USB memory.

摘要翻译： 确定是否允许在USB存储器上接受作业。 在USB存储器工作允许状态下，执行USB存储器作业选择显示处理。 当处于禁止USB存储器工作的状态时，执行USB存储器多重负载禁止显示处理。 当在USB存储器工作被接受禁止状态时，连续提供相关的显示屏幕。 因此，向用户提供相关的显示屏幕以提示确认USB存储器的加载。

公开(公告)号：US20100067046A1

公开(公告)日：2010-03-18

申请号：US12557663

申请日：2009-09-11

申请人： Koji Tsukada ,  Hiroyasu Ito ,  Harumitsu Fujimori ,  Ichiro Bessho

发明人： Koji Tsukada ,  Hiroyasu Ito ,  Harumitsu Fujimori ,  Ichiro Bessho

IPC分类号： G06F3/12 ,  G06Q10/00 ,  G06Q30/00 ,  G06Q50/00

CPC分类号： G07F17/0014 ,  G03G15/5083 ,  G03G15/5087 ,  G03G2215/00109 ,  G06Q20/145 ,  G06Q20/28 ,  G06Q30/0283 ,  G06Q30/04 ,  G07F17/266

摘要： A charging management server is informed of an ED number stored in an IC card, and a user charging table of the charging management server is read. A new user charging list is transmitted to an MFP. In the case where the MFP receives a cooperative job to be executed by a cooperative server, a sub charging list is generated. The generated new sub charging list is transmitted together with image data to the cooperative server. The cooperative server executes the job on the basis of charging a fee for the job. As the job is executed on the basis of charging, the sub charging list is updated. In parallel with the execution of the cooperative job by the cooperative server, the WP can perform a normal job according to the charging list.

摘要翻译： 向计费管理服务器通知存储在IC卡中的ED号，读取计费管理服务器的用户计费表。 新的用户充电列表被发送到MFP。 在MFP接收到由协作服务器执行的协作作业的情况下，生成子充电列表。 生成的新子计费列表与图像数据一起发送到协作服务器。 合作服务器在为作业收取费用的基础上执行作业。 随着作业在充电的基础上被执行，子充电列表被更新。 与合作服务器执行协同作业并行，WP可以根据收费列表执行正常工作。

公开(公告)号：US20090160017A1

公开(公告)日：2009-06-25

申请号：US12285577

申请日：2008-10-09

申请人： Hiroyasu Ito

发明人： Hiroyasu Ito

IPC分类号： H01L29/86 ,  H01L21/20

CPC分类号： H01L29/94 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/3185 ,  H01L27/0658 ,  H01L27/0682 ,  H01L29/045 ,  H01L29/511 ,  H01L29/7322

摘要： In manufacturing a semiconductor device including a substrate having a (111)-plane orientation and an off-set angle in a range between 3 degrees and 4 degrees, a capacitor, a transistor and a diffusion resistor are formed in the substrate, each of which are separated by a junction separation layer. A first silicon nitride film is formed by low pressure CVD over a surface of the substrate except a bottom portion of a contact hole and a portion over the junction separation layer, and a silicon oxide film is formed by low pressure CVD over the first silicon nitride film. A second silicon nitride film as a protecting film is formed by plasma CVD so as to cover the semiconductor device finally. Therefore, the semiconductor device having high reliability can be obtained.

摘要翻译： 在制造包括具有（111）平面取向的基板和在3度和4度之间的范围内的偏移角的半导体器件时，在基板中形成电容器，晶体管和扩散电阻器，每个电容器 被连接分离层分离。 通过低压CVD在基板的表面上形成第一氮化硅膜，除了接触孔的底部和接合分离层之上的部分之外，并且通过低压CVD在第一氮化硅上形成氧化硅膜 电影。 通过等离子体CVD形成作为保护膜的第二氮化硅膜，以最终覆盖半导体器件。 因此，可以获得具有高可靠性的半导体器件。

公开(公告)号：US07181094B2

公开(公告)日：2007-02-20

申请号：US11213955

申请日：2005-08-30

申请人： Masaji Noguchi ,  Tomohiro Ueno ,  Hiroyasu Ito ,  Hideyuki Miyata ,  Yutaka Kai

发明人： Masaji Noguchi ,  Tomohiro Ueno ,  Hiroyasu Ito ,  Hideyuki Miyata ,  Yutaka Kai

IPC分类号： G02F1/335 ,  H04J14/02 ,  H04B10/00

CPC分类号： G02F1/113

摘要： A radio-frequency-signal generator generates an RF signal. An optical monitor monitors a first intensity of a reference signal and a second intensity of a drop signal. A reference-frequency determining unit determines, based on the first intensity, a first frequency of an RF signal that causes the AOTF to output the reference signal. A temperature detecting unit detects a temperature of the AOTF. A frequency calculating unit calculates a second frequency of an RF signal that causes the AOTF to output a drop signal of a desired wavelength. A control unit controls the RF-signal generator to generate the RF signal of the second frequency calculated.

摘要翻译： 射频信号发生器产生RF信号。 光学监视器监视参考信号的第一强度和下降信号的第二强度。 参考频率确定单元基于第一强度确定使AOTF输出参考信号的RF信号的第一频率。 温度检测单元检测AOTF的温度。 频率计算单元计算使AOTF输出所需波长的液滴信号的RF信号的第二频率。 控制单元控制RF信号发生器以产生所计算的第二频率的RF信号。

公开(公告)号：US06960511B2

公开(公告)日：2005-11-01

申请号：US10642889

申请日：2003-08-18

申请人： Hiroyasu Ito ,  Toshimasa Yamamoto

发明人： Hiroyasu Ito ,  Toshimasa Yamamoto

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7816 ,  H01L23/3157 ,  H01L27/092 ,  H01L29/42368 ,  H01L29/7824 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device, which can prevent a current capability from deteriorating with time, is disclosed. A P-channel type LDMOS is formed in an N-type monocrystal silicon substrate. The P-channel type LDMOS includes: a P-type impurity diffusion layer formed in a well shape so as to reach a predetermined depth; a channel well layer formed by double-diffusing N-type impurities; a source diffusion layer; a potential fixing electrode; drain-contact electrode; a LOCOS oxide film; a gate electrode; a drain electrode; a source electrode; and so on. Especially, the gate electrode is formed so as to overlap onto the LOCOS oxide film, and its protrusion amount onto the LOCOS oxide film (gate overlap length O/L) is set to about 10 μm, which is substantially ½ of a width size of the LOCOS oxide film.

摘要翻译： 公开了能够防止电流能力随时间劣化的半导体装置。 在N型单晶硅衬底中形成P沟道型LDMOS。 P沟道型LDMOS包括：形成为良好形状以便达到预定深度的P型杂质扩散层; 通过双扩散N型杂质形成的沟道阱层; 源极扩散层; 潜在的固定电极; 漏极接触电极; LOCOS氧化膜; 栅电极; 漏电极; 源电极; 等等。 特别地，栅电极被形成为与LOCOS氧化物膜重叠，并且其在LOCOS氧化物膜上的突出量（栅极重叠长度O / L）被设定为大约10μm，大约是宽度尺寸的1/2 LOCOS氧化膜。

公开(公告)号：US5414525A

公开(公告)日：1995-05-09

申请号：US139758

申请日：1993-10-25

申请人： Hiroyasu Ito

发明人： Hiroyasu Ito

IPC分类号： H04N1/32 ,  H04N1/327 ,  H04N1/415 ,  H04N7/26 ,  H04Q11/04 ,  H04N1/41

CPC分类号： H04Q11/0471 ,  H04N1/327 ,  H04N1/415 ,  H04N19/37

摘要： An image communicating apparatus comprises:an input device to input image data;a dividing circuit to divide the input image data into a plurality of blocks each of which is constructed by a predetermined number of pixels, an encoder to encode the image data on a unit basis of the blocks divided by the dividing circuit;and a transmission unit for allocating the data divided and encoded by the dividing circuit and the encoder to an arbitrary channel among a plurality of information channels on a block unit basis.

摘要翻译： 一种图像通信装置，包括：输入装置，输入图像数据; 分割电路，用于将输入图像数据划分成由预定数量的像素构成的多个块;编码器，用于以由分割电路划分的块为单位对单元进行编码; 以及传输单元，用于以块单位为基础，将由分割电路和编码器划分和编码的数据分配给多个信息信道中的任意信道。