摘要:
An ion beam system includes a sample stage which holds a sample, an irradiation optical system which irradiates a sample held on the sample stage by an ion beam, and a charged particle beam observation system for observing a cross-section of the sample which is machined by the ion beam. The charged particle beam observation system includes a structure in which an axis along with an ion beam is extracted from the ion source and an axis along which the sample is irradiated are arranged so as to be at least transverse to one another.
摘要:
An ion beam system includes a sample stage which holds a sample, an ion source which generates an ion beam so that the ion beam is extracted from the ion source along an extraction axis, an irradiation optical system having an irradiation axis along which the ion beam is irradiated toward the sample held on the sample stage, and a charged particle beam observation system for observing a surface of the sample which is machined by the irradiated ion beam. The extraction axis along which the ion beam is extracted from the ion source and the irradiation axis along which the sample is irradiated are inclined with respect to one another.
摘要:
There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要:
There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要:
An ion beam machining system which performs a predetermined machining of a sample by irradiating the sample with an ion beam includes a beam spot former which forms a beam spot shape of the ion beam to be non-axially symmetric in a perpendicular plane with respect to an irradiation axis of the ion beam, and an axis orientator which orients one axis of the beam spot at the ion beam irradiation position on the sample in a predetermined direction.
摘要:
A negative electrode for a lithium secondary battery of the present invention includes a current collector and a negative electrode active material layer carried on the current collector. The negative electrode active material layer includes a plurality of columnar particles. The current collector has a surface including a depression and a plurality of projected regions defined by the depression. The projected regions carry the columnar particles. Further, the present invention relates to a lithium secondary battery using the foregoing negative electrode. According to the present invention, it is possible to provide a high-capacity negative electrode excellent mainly in cycle characteristics for a lithium secondary battery, and a lithium secondary battery including the same.
摘要:
A negative electrode active material for a lithium ion secondary battery contains a lithium titanium complex oxide having a composition expressed as Li4Ti5-x-yFexVyO12 (where 0≦x≦0.3, 0≦y≦0.05) or Li4Ti5-x-zFexBzO12 (where 0≦x≦0.3, 0≦z≦0.3).
摘要:
A nonaqueous solvent for an electricity storage device according to the present invention comprises fluorine-containing cyclic saturated hydrocarbon having a structure which is represented by general formula (1) below and in which one or two substituents R are introduced into a cyclohexane ring (in general formula (1), R is represented by CnX2n+1, n is an integer of 1 or greater, at least one of (2n+1) pieces of X's is F, and the other X's are F or H).
摘要:
Provided is a nonaqueous solvent for an electrical storage device, including a fluorine-containing, cyclic, saturated hydrocarbon represented by the following general formula (1) and having a structure obtained by introducing one or two substituents R into a cyclopentane ring: in the general formula (1), R is represented by CnX2n+1, n represents an integer of 1 or more, at least one of the 2n+1 X's represents F, and the other X's each represent H.
摘要:
Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph.