公开(公告)号：US20080135779A1

公开(公告)日：2008-06-12

申请号：US12020150

申请日：2008-01-25

申请人： Hiroyasu SHICHI ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

发明人： Hiroyasu SHICHI ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

IPC分类号： G21K5/08

CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J27/10 ,  H01J37/09 ,  H01J2237/0458 ,  H01J2237/0835 ,  H01J2237/31745 ,  H01J2237/31749

摘要： An ion beam system includes a sample stage which holds a sample, an irradiation optical system which irradiates a sample held on the sample stage by an ion beam, and a charged particle beam observation system for observing a cross-section of the sample which is machined by the ion beam. The charged particle beam observation system includes a structure in which an axis along with an ion beam is extracted from the ion source and an axis along which the sample is irradiated are arranged so as to be at least transverse to one another.

摘要翻译： 离子束系统包括保持样品的样品台，通过离子束照射保持在样品台上的样品的照射光学系统和用于观察被加工的样品的横截面的带电粒子束观察系统 通过离子束。 带电粒子束观测系统包括其中从离子源提取轴和离子束的结构，并且将照射样品的轴布置成至少彼此横向。

公开(公告)号：US20110174974A1

公开(公告)日：2011-07-21

申请号：US13007272

申请日：2011-01-14

申请人： Mitsuo TOKUDA ,  Muneyuki FUKUDA ,  Yasuhiro MITSUI ,  Hidemi KOIKE ,  Satoshi TOMIMATSU ,  Hiroyasu SHICHI ,  Hideo KASHIMA ,  Kaoru UMEMURA

发明人： Mitsuo TOKUDA ,  Muneyuki FUKUDA ,  Yasuhiro MITSUI ,  Hidemi KOIKE ,  Satoshi TOMIMATSU ,  Hiroyasu SHICHI ,  Hideo KASHIMA ,  Kaoru UMEMURA

IPC分类号： G01N23/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

摘要翻译： 本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片 。 在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里 被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。

公开(公告)号：US20120273692A1

公开(公告)日：2012-11-01

申请号：US13547942

申请日：2012-07-12

申请人： Mitsuo TOKUDA ,  Muneyuki FUKUDA ,  Yasuhiro MITSUI ,  Hidemi KOIKE ,  Satoshi TOMIMATSU ,  Hiroyasu SHICHI ,  Hideo KASHIMA ,  Kaoru UMEMURA

发明人： Mitsuo TOKUDA ,  Muneyuki FUKUDA ,  Yasuhiro MITSUI ,  Hidemi KOIKE ,  Satoshi TOMIMATSU ,  Hiroyasu SHICHI ,  Hideo KASHIMA ,  Kaoru UMEMURA

IPC分类号： H01J3/14

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

摘要翻译： 本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片 。 在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里 被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。

公开(公告)号：US20090173888A1

公开(公告)日：2009-07-09

申请号：US12318583

申请日：2008-12-31

申请人： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Takashi OHSHIMA ,  Satoshi TOMIMATSU ,  Tomihiro HASHIZUME ,  Tohru ISHITANI

发明人： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Takashi OHSHIMA ,  Satoshi TOMIMATSU ,  Tomihiro HASHIZUME ,  Tohru ISHITANI

IPC分类号： H01J3/14 ,  H01J27/02

CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

摘要翻译： 一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。

公开(公告)号：US20120319003A1

公开(公告)日：2012-12-20

申请号：US13595588

申请日：2012-08-27

申请人： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Norihide SAHO ,  Noriaki ARAI ,  Tohru ISHITANI

发明人： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Norihide SAHO ,  Noriaki ARAI ,  Tohru ISHITANI

IPC分类号： G21K5/04

CPC分类号： H01J37/08 ,  H01J27/26 ,  H01J37/15 ,  H01J2237/0216 ,  H01J2237/0807 ,  H01J2237/28

摘要： Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.

摘要翻译： 提供了一种具有气体电离电离离子源的离子束装置，其能够防止发射极尖端以非接触的方式振动。 气体电场离子源由用于产生离子的发射极尖端（21）组成; 发射极底座（64），用于支撑发射器尖端; 电离室具有与发射极尖端相对的引出电极（24），其构造为围绕发射极尖端（21）; 以及用于将气体供给到发射极尖端附近的气体供给管（25）。 发射极基座和真空容器彼此磁性相互作用。