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    Ion beam system and machining method
    2.
    发明授权
    Ion beam system and machining method 有权
    离子束系统和加工方法

    公开(公告)号：US07952083B2

    公开(公告)日：2011-05-31

    申请号：US12020150

    申请日：2008-01-25

    申请人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

    发明人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

    IPC分类号： G21K5/08

    CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J27/10 ,  H01J37/09 ,  H01J2237/0458 ,  H01J2237/0835 ,  H01J2237/31745 ,  H01J2237/31749

    摘要： An ion beam system includes a sample stage which holds a sample, an ion source which generates an ion beam so that the ion beam is extracted from the ion source along an extraction axis, an irradiation optical system having an irradiation axis along which the ion beam is irradiated toward the sample held on the sample stage, and a charged particle beam observation system for observing a surface of the sample which is machined by the irradiated ion beam. The extraction axis along which the ion beam is extracted from the ion source and the irradiation axis along which the sample is irradiated are inclined with respect to one another.

    摘要翻译： 离子束系统包括保持样品的样品台，产生离子束的离子源，使得离子束沿着提取轴从离子源提取;照射光学系统，具有照射轴，沿着该离子束的离子束 照射到保持在样品台上的样品，以及带电粒子束观察系统，用于观察被照射的离子束加工的样品的表面。 离子束从离子源提取的提取轴和样品照射的照射轴相对于彼此倾斜。

    Ion beam system and machining method
    3.
    发明授权
    Ion beam system and machining method 有权
    离子束系统和加工方法

    公开(公告)号：US07326942B2

    公开(公告)日：2008-02-05

    申请号：US11210732

    申请日：2005-08-25

    申请人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

    发明人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

    IPC分类号： H01J37/30 ,  H01J37/305 ,  H01J37/08

    CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J27/10 ,  H01J37/09 ,  H01J2237/0458 ,  H01J2237/0835 ,  H01J2237/31745 ,  H01J2237/31749

    摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.

    摘要翻译： 存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。 离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。 用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。 此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

    Ion beam system and machining method
    4.
    发明申请
    Ion beam system and machining method 有权
    离子束系统和加工方法

    公开(公告)号：US20060065854A1

    公开(公告)日：2006-03-30

    申请号：US11210732

    申请日：2005-08-25

    申请人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

    发明人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J27/10 ,  H01J37/09 ,  H01J2237/0458 ,  H01J2237/0835 ,  H01J2237/31745 ,  H01J2237/31749

    摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.

    摘要翻译： 存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。 离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。 用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。 此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

    APPARATUS AND METHOD FOR SPECIMEN FABRICATION
    7.
    发明申请
    APPARATUS AND METHOD FOR SPECIMEN FABRICATION 有权
    仪器制造的装置和方法

    公开(公告)号：US20090121158A1

    公开(公告)日：2009-05-14

    申请号：US12354153

    申请日：2009-01-15

    申请人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

    发明人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

    IPC分类号： G21G5/00

    CPC分类号： H01J37/3056 ,  H01J2237/006 ,  H01J2237/31744 ,  H01J2237/31745

    摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

    摘要翻译： 试样制造装置包括：样品台，放置试样; 带电粒子束光学系统，用于将带电粒子束照射在样本上; 供给来源的蚀刻剂材料在其分子中含有氟和碳的蚀刻剂材料，其分子中不含氧，在标准状态下为固体或液体; 以及在其中容纳样品台的真空室。 试样制造方法包括以下步骤：通过照射带电粒子束来处理试样的要求区域附近的孔; 通过照射带电粒子束使被请求区域曝光; 在其分子中供给含有氟和碳的蚀刻剂材料在其分子中不含氧，并且在标准状态下为固体或液体，暴露于所要求的区域; 以及将所述带电粒子束照射在被请求区域上。

    Method and apparatus for specimen fabrication
    9.
    发明授权
    Method and apparatus for specimen fabrication 有权
    用于样品制造的方法和装置

    公开(公告)号：US07268356B2

    公开(公告)日：2007-09-11

    申请号：US10898592

    申请日：2004-07-26

    申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

    发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

    IPC分类号： G21G5/00

    CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

    摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

    摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。