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公开(公告)号：US5054031A
公开(公告)日：1991-10-01
申请号：US455574
申请日：1989-12-22
CPC分类号： H01S5/10 , H01S5/16 , H01S5/2234 , H01S5/2235 , H01S5/24
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge portion; at least one striped groove formed on the center of the ridge portion through the current blocking layer; and a multi-layered structure disposed on the current blocking layer, the multi-layered structure successively having a first current blocking layer, an active layer for laser oscillation, and a second current blocking layer; wherein at least two side grooves are symmetrically formed on both sides of the center region of the ridge portion with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.
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公开(公告)号：US5206185A
公开(公告)日：1993-04-27
申请号：US707449
申请日：1991-05-30
CPC分类号： H01S5/10 , H01S5/16 , H01S5/2234 , H01S5/2235 , H01S5/24
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge portion; at least one striped groove formed on the center of the ridge portion through the current blocking layer; and a multi-layered structure disposed on the current blocking layer, the multi-layered structure successively having a first current blocking layer, an active layer for laser oscillation, and a second current blocking layer; wherein at least two side grooves are symmetrically formed on both sides of the center region of the ridge portion with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.
摘要翻译： 公开了一种半导体激光器件，其包括具有脊部的半导体衬底，脊部的宽度在小面附近比在器件内部更小; 形成在包括所述脊部的所述基板上的电流阻挡层; 通过所述电流阻挡层形成在所述脊部的中心的至少一个条纹槽; 以及设置在电流阻挡层上的多层结构，所述多层结构依次具有第一电流阻挡层，激光振荡用有源层和第二电流阻挡层; 其中至少两个侧槽在脊部的中心区域的两侧以与其附近的区域宽度相同的宽度对称地形成。 另外，公开了半导体激光装置的制造方法。
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公开(公告)号：US5042044A
公开(公告)日：1991-08-20
申请号：US513508
申请日：1990-04-27
申请人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
发明人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.
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公开(公告)号：US4878223A
公开(公告)日：1989-10-31
申请号：US224558
申请日：1988-07-26
CPC分类号： H01S5/4031 , H01S5/2234
摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate constitute a laser array portion of the semiconductor laser array device.
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公开(公告)号：US4914669A
公开(公告)日：1990-04-03
申请号：US222968
申请日：1988-07-22
CPC分类号： H01S5/4031 , H01S5/028 , H01S5/1028 , H01S5/1032
摘要： A semiconductor laser array apparatus comprising a single substrate and a plurality of semiconductor laser devices that are disposed with a given pitch on the substrate, some of the semiconductor laser devices constituting laser devices of a laser oscillation-operating area of the semiconductor laser array apparatus and the other semiconductor laser devices constituting laser devices of the non-laser oscillation-operating areas that are positioned outside of the laser oscillation-operating area, wherein the oscillation threshold current level of at least one of the semiconductor laser devices of each of the non-laser oscillation-operating areas that is the closest to the laser oscillation-operating area is higher than those of the semiconductor laser devices of the laser oscillation-operating area.
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公开(公告)号：US4856015A
公开(公告)日：1989-08-08
申请号：US203469
申请日：1988-06-07
CPC分类号： H01S5/02461 , H01L24/32 , H01S5/02 , H01S5/4068 , H01L2924/12042
摘要： A semiconductor laser array device has a relatively wide light-emitting area with many semiconductor lasers and a shielding layer selectively disposed with respect to peripheral regions of the light-emitting area such that the rate of heat emission from the center part can be increased relative to that from the peripheral regions. Temperature distribution on the light-emitting area can thus be made uniform and laser light can be emitted from the entire laser emitting area under a phase-synchronized condition.
摘要翻译： 半导体激光器阵列器件具有相当宽的发光面积，具有许多半导体激光器和相对于发光区域的周边区域选择性地布置的屏蔽层，使得来自中心部分的热发射速率可以相对于 来自周边地区。 因此，在相位同步状态下，可以使发光区域的温度分布均匀，从整个激光发射区域发射激光。
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公开(公告)号：US4903274A
公开(公告)日：1990-02-20
申请号：US195742
申请日：1988-05-18
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate consitute a laser array portion of the semiconductor laser array device.
摘要翻译： 一种半导体激光器阵列器件，包括具有多个沟槽的衬底和设置在衬底上的有源层，从而产生与沟槽对应的有源层内的光波导，其中沟槽设置在衬底的整个区域上， 用于防止将电流注入到位于基板的中心区域外部的一些凹槽中，由此位于基板的中心区域中的其它凹槽构成半导体激光器阵列器件的激光器阵列部分。
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公开(公告)号：US4872174A
公开(公告)日：1989-10-03
申请号：US239301
申请日：1988-09-01
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
CPC分类号： H01S5/20 , H01S5/125 , H01S5/2232 , H01S5/12 , H01S5/32316 , H01S5/4031
摘要： A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x
摘要翻译： 半导体激光器件包括依次包括Ga1-yAlyAs光导层和Ga1-zAlzAs（z> y）包覆层的层压晶体结构，在Ga 1-x Al 2 As（z） x <= 0.1和x
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公开(公告)号：US4890293A
公开(公告)日：1989-12-26
申请号：US255049
申请日：1988-10-07
申请人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
发明人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/20 , H01S5/209 , H01S5/22 , H01S5/3211 , H01S5/3432 , H01S5/4031
摘要： A semiconductor laser device comprising a first layer that is of a first conductivity type; a second layer that is disposed on the first layer, the second layer having a forbidden bandgap smaller than that of the first layer and having a refraction index larger than that of the first layer; a third layer that is of a second conductivity type; the third layer being disposed over the second layer, having a forbidden bandgap larger than that of the second layer, and having a refraction index smaller than that of the second layer; a fourth layer that functions as a quantum wall, the fourth layer being disposed between the second and third layers and the thickness of the fourth layer being the de Broglie's wavelength or less; and at least one striped mesa, the lower portion of which is constituted by the third layer, wherein the fourth layer has a forbidden bandgap that is larger than that of the energy of photons generated by the second layer, and moreover the fourth layer has the etching characteristics that are different from those of the third layer positioned just above the fourth layer.
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公开(公告)号：US5271028A
公开(公告)日：1993-12-14
申请号：US918462
申请日：1992-07-22
申请人： Masafumi Kondo , Takahiro Suyama , Shinji Kaneiwa , Toshio Hata , Hiroyuki Hosoba , Sadayoshi Matsui
发明人： Masafumi Kondo , Takahiro Suyama , Shinji Kaneiwa , Toshio Hata , Hiroyuki Hosoba , Sadayoshi Matsui
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/305 , H01S5/2231 , H01S5/2237 , H01S5/3081 , H01S5/32308 , H01S5/3432
摘要： A semiconductor laser device which can effectively confine electrons and positive holes is disclosed. The semiconductor laser device includes a semiconductor substrate of a first conductivity type, a current blocking layer of a second conductivity type, a first semiconductor layer of the first conductivity type made of a III-V group compound semiconductor, an active layer made of a III-V group compound semiconductor, and a second semiconductor layer. The semiconductor substrate has a ridge-type mesa having (n11)A planes. The current blocking layer is formed on the semiconductor substrate other than the top face of the mesa. The first semiconductor layer is formed on the entire surface of the current blocking layer and on the top face of the mesa. The active layer is formed on the first semiconductor layer. The second semiconductor layer is formed on the active layer. The second semiconductor layer has inclined portions, and is made of a III-V group compound semiconductor containing an amphoteric element as an impurity so that the inclined portions are of the first conductivity type and the other portions are of the second conductivity type.
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