公开(公告)号：US20100328988A1

公开(公告)日：2010-12-30

申请号：US12677017

申请日：2008-09-09

申请人： Hiroyuki Nagashima ,  Hirofumi Inoue ,  Haruki Toda

发明人： Hiroyuki Nagashima ,  Hirofumi Inoue ,  Haruki Toda

IPC分类号： G11C11/00

CPC分类号： H01L27/101 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0009 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0054 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72

摘要： A nonvolatile semiconductor memory device comprises a memory cell array of electrically erasable programmable nonvolatile memory cells arranged in matrix, each memory cell using a variable resistor. A pulse generator is operative to generate plural types of write pulses for varying the resistance of the variable resistor in three or more stages based on ternary or higher write data. A selection circuit is operative to select a write target memory cell from the memory cell array based on a write address and supply the write pulse generated from the pulse generator to the selected memory cell.

摘要翻译： 非易失性半导体存储器件包括以矩阵形式布置的电可擦除可编程非易失性存储单元的存储单元阵列，每个存储单元使用可变电阻器。 脉冲发生器用于产生多种类型的写入脉冲，用于基于三进制或更高写入数据在三个或更多个阶段中改变可变电阻器的电阻。 选择电路可操作以基于写地址从存储单元阵列中选择写入目标存储单元，并将从脉冲发生器产生的写入脉冲提供给所选存储单元。

公开(公告)号：US08259489B2

公开(公告)日：2012-09-04

申请号：US12677017

申请日：2008-09-09

申请人： Hiroyuki Nagashima ,  Hirofumi Inoue ,  Haruki Toda

发明人： Hiroyuki Nagashima ,  Hirofumi Inoue ,  Haruki Toda

IPC分类号： G11C11/00

CPC分类号： H01L27/101 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0009 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0054 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72

摘要： A nonvolatile semiconductor memory device comprises a memory cell array of electrically erasable programmable nonvolatile memory cells arranged in matrix, each memory cell using a variable resistor. A pulse generator is operative to generate plural types of write pulses for varying the resistance of the variable resistor in three or more stages based on ternary or higher write data. A selection circuit is operative to select a write target memory cell from the memory cell array based on a write address and supply the write pulse generated from the pulse generator to the selected memory cell.

摘要翻译： 非易失性半导体存储器件包括以矩阵形式布置的电可擦除可编程非易失性存储单元的存储单元阵列，每个存储单元使用可变电阻器。 脉冲发生器用于产生多种类型的写入脉冲，用于基于三进制或更高写入数据在三个或更多个阶段中改变可变电阻器的电阻。 选择电路可操作以基于写地址从存储单元阵列中选择写入目标存储单元，并将从脉冲发生器产生的写入脉冲提供给所选存储单元。

公开(公告)号：US08031508B2

公开(公告)日：2011-10-04

申请号：US12266879

申请日：2008-11-07

申请人： Haruki Toda ,  Hirofumi Inoue ,  Hiroto Nakai

发明人： Haruki Toda ,  Hirofumi Inoue ,  Hiroto Nakai

IPC分类号： G11C11/00

CPC分类号： G11C13/00 ,  G11C5/063 ,  G11C8/14 ,  G11C11/56 ,  G11C13/0028 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2213/71 ,  G11C2213/72

摘要： A resistance change memory device includes: a memory cell array with memory cells arranged therein, the memory cell having a variable resistance element for storing a rewritable resistance value; a reference cell formed of the same memory cells as those set in a high resistance state in the memory cell array, the reference cell being trimmed with selection of the number of parallel-connected memory cells to have a reference current value used for detecting data in the memory cell array; and a sense amplifier configured to compare a cell current value of a memory cell selected in the memory cell array with the reference current value of the reference cell.

摘要翻译： 电阻变化存储器件包括：存储单元阵列，其中布置有存储单元，所述存储单元具有用于存储可重写电阻值的可变电阻元件; 由与存储单元阵列中的高电阻状态相同的存储单元形成的参考单元，通过选择并联连接的存储单元的数量来修整参考单元以具有用于检测数据的参考电流值 存储单元阵列; 以及读出放大器，被配置为将存储单元阵列中选择的存储单元的单元电流值与参考单元的参考电流值进行比较。

公开(公告)号：US20120008372A1

公开(公告)日：2012-01-12

申请号：US13237500

申请日：2011-09-20

申请人： Haruki Toda ,  Hirofumi Inoue ,  Hiroto Nakai

发明人： Haruki Toda ,  Hirofumi Inoue ,  Hiroto Nakai

IPC分类号： G11C11/00

CPC分类号： G11C13/00 ,  G11C5/063 ,  G11C8/14 ,  G11C11/56 ,  G11C13/0028 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2213/71 ,  G11C2213/72

摘要： A resistance change memory device includes: a memory cell array with memory cells arranged therein, the memory cell having a variable resistance element for storing a rewritable resistance value; a reference cell formed of the same memory cells as those set in a high resistance state in the memory cell array, the reference cell being trimmed with selection of the number of parallel-connected memory cells to have a reference current value used for detecting data in the memory cell array; and a sense amplifier configured to compare a cell current value of a memory cell selected in the memory cell array with the reference current value of the reference cell.

摘要翻译： 电阻变化存储器件包括：存储单元阵列，其中布置有存储单元，所述存储单元具有用于存储可重写电阻值的可变电阻元件; 由与存储单元阵列中的高电阻状态相同的存储单元形成的参考单元，通过选择并联连接的存储单元的数量来修整参考单元以具有用于检测数据的参考电流值 存储单元阵列; 以及读出放大器，被配置为将存储单元阵列中选择的存储单元的单元电流值与参考单元的参考电流值进行比较。

公开(公告)号：US08400816B2

公开(公告)日：2013-03-19

申请号：US13237500

申请日：2011-09-20

申请人： Haruki Toda ,  Hirofumi Inoue ,  Hiroto Nakai

发明人： Haruki Toda ,  Hirofumi Inoue ,  Hiroto Nakai

IPC分类号： G11C11/00

CPC分类号： G11C13/00 ,  G11C5/063 ,  G11C8/14 ,  G11C11/56 ,  G11C13/0028 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2213/71 ,  G11C2213/72

摘要： A resistance change memory device includes: a memory cell array with memory cells arranged therein, the memory cell having a variable resistance element for storing a rewritable resistance value; a reference cell formed of the same memory cells as those set in a high resistance state in the memory cell array, the reference cell being trimmed with selection of the number of parallel-connected memory cells to have a reference current value used for detecting data in the memory cell array; and a sense amplifier configured to compare a cell current value of a memory cell selected in the memory cell array with the reference current value of the reference cell.

摘要翻译： 电阻变化存储器件包括：存储单元阵列，其中布置有存储单元，所述存储单元具有用于存储可重写电阻值的可变电阻元件; 由与存储单元阵列中的高电阻状态相同的存储单元形成的参考单元，通过选择并联连接的存储单元的数量来修整参考单元以具有用于检测数据的参考电流值 存储单元阵列; 以及读出放大器，被配置为将存储单元阵列中选择的存储单元的单元电流值与参考单元的参考电流值进行比较。

公开(公告)号：US20090122598A1

公开(公告)日：2009-05-14

申请号：US12266879

申请日：2008-11-07

申请人： Haruki TODA ,  Hirofumi Inoue ,  Hiroto NAKAI

发明人： Haruki TODA ,  Hirofumi Inoue ,  Hiroto NAKAI

IPC分类号： G11C11/21 ,  G11C7/06

CPC分类号： G11C13/00 ,  G11C5/063 ,  G11C8/14 ,  G11C11/56 ,  G11C13/0028 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2213/71 ,  G11C2213/72

摘要： A resistance change memory device includes: a memory cell array with memory cells arranged therein, the memory cell having a variable resistance element for storing a rewritable resistance value; a reference cell formed of the same memory cells as those set in a high resistance state in the memory cell array, the reference cell being trimmed with selection of the number of parallel-connected memory cells to have a reference current value used for detecting data in the memory cell array; and a sense amplifier configured to compare a cell current value of a memory cell selected in the memory cell array with the reference current value of the reference cell.

摘要翻译： 电阻变化存储器件包括：存储单元阵列，其中布置有存储单元，所述存储单元具有用于存储可重写电阻值的可变电阻元件; 由与存储单元阵列中的高电阻状态相同的存储单元形成的参考单元，通过选择并联连接的存储单元的数量来修整参考单元以具有用于检测数据的参考电流值 存储单元阵列; 以及读出放大器，被配置为将存储单元阵列中选择的存储单元的单元电流值与参考单元的参考电流值进行比较。

公开(公告)号：US20110242875A1

公开(公告)日：2011-10-06

申请号：US13058952

申请日：2009-06-24

申请人： Hiroyuki Nagashima ,  Hirofumi Inoue

发明人： Hiroyuki Nagashima ,  Hirofumi Inoue

IPC分类号： G11C11/00

CPC分类号： G11C13/003 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0023 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/31 ,  G11C2213/72

摘要： A nonvolatile semiconductor memory device comprises a cell array including a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and a plurality of memory cells arranged in matrix and connected at intersections of the first and second lines between both lines, each memory cell containing a serial circuit of an electrically erasable programmable variable resistive element of which resistance is nonvolatilely stored as data and a non-ohmic element; and a plurality of access circuits operative to simultaneously access the memory cells physically separated from each other in the cell array.

摘要翻译： 一种非易失性半导体存储器件，包括一个单元阵列，该单元阵列包括多个第一线，与该多条第一线相交的多个第二线，以及多个存储单元，被布置成矩阵并连接在两条线之间的第一和第二线的交点处 每个存储单元包含其中电阻被非易失性地存储为数据的电可擦除可编程可变电阻元件和非欧姆元件的串行电路; 以及多个访问电路，其操作以同时访问在单元阵列中彼此物理分离的存储单元。

公开(公告)号：US08575589B2

公开(公告)日：2013-11-05

申请号：US12271434

申请日：2008-11-14

申请人： Hiroyuki Nagashima ,  Koichi Kubo ,  Hirofumi Inoue

发明人： Hiroyuki Nagashima ,  Koichi Kubo ,  Hirofumi Inoue

IPC分类号： H01L29/06

CPC分类号： H01L27/2463 ,  H01L27/101 ,  H01L27/112 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1675

摘要： A nonvolatile semiconductor memory device includes a plurality of first lines; a plurality of second lines crossing the plurality of first lines; a plurality of memory cells each connected at an intersection of the first and second lines between both lines and including a variable resistor operative to store information in accordance with a variation in resistance; and a protection film covering the side of the variable resistor to suppress migration of cations at the side of the variable resistor.

摘要翻译： 非易失性半导体存储器件包括多条第一线; 多条第二线穿过多条第一线; 多个存储单元，每个存储单元分别连接在两条线之间的第一和第二线的交点处，并且包括可变电阻，用于根据电阻的变化存储信息; 以及覆盖可变电阻器一侧的保护膜，以抑制可变电阻器一侧的阳离子迁移。

公开(公告)号：US08085585B2

公开(公告)日：2011-12-27

申请号：US13158098

申请日：2011-06-10

申请人： Hiroyuki Nagashima ,  Hirofumi Inoue

发明人： Hiroyuki Nagashima ,  Hirofumi Inoue

IPC分类号： G11C11/00

CPC分类号： G11C8/14 ,  G11C5/02 ,  G11C5/063 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0028 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes a memory block having a three-dimensional memory cell array structure in which memory cell arrays are stacked, the memory cell array including: a plurality of first interconnections which are parallel to one another; a plurality of second interconnections which are formed so as to intersect with the plurality of first interconnections, the second interconnections being parallel to one another; and a memory cell which is disposed in each intersection portion of the first interconnection and the second interconnection, one end of the memory cell being connected to the first interconnection, the other end of the memory cell being connected to the second interconnection. The first interconnection disposed between the adjacent memory cell arrays is shared by memory cells above and below the first interconnection, and the vertically-overlapping first interconnections are connected to each other.

摘要翻译： 一种半导体存储器件包括具有堆叠存储单元阵列的三维存储单元阵列结构的存储块，所述存储单元阵列包括：彼此平行的多个第一互连; 多个第二互连形成为与所述多个第一互连相交，所述第二互连彼此平行; 以及存储单元，其设置在所述第一互连和所述第二互连的每个交叉部分中，所述存储单元的一端连接到所述第一互连，所述存储单元的另一端连接到所述第二互连。 设置在相邻存储单元阵列之间的第一互连由第一互连之上和之下的存储单元共享，并且垂直重叠的第一互连彼此连接。

公开(公告)号：US20090137112A1

公开(公告)日：2009-05-28

申请号：US12275741

申请日：2008-11-21

申请人： Hideyuki TABATA ,  Hirofumi Inoue ,  Hiroyuki Nagashima ,  Kohichi Kubo

发明人： Hideyuki TABATA ,  Hirofumi Inoue ,  Hiroyuki Nagashima ,  Kohichi Kubo

IPC分类号： H01L21/768

CPC分类号： H01L27/2418 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1675

摘要： A method of manufacturing nonvolatile semiconductor memory devices comprises forming a first wiring material; and stacking memory cell materials on the first wiring material, which configure memory cells each including a variable resistor operative to nonvolatilely store information in accordance with variation in resistance. The method also comprises forming a plurality of first parallel trenches in the first wiring material and the stacked memory cell materials, the first trenches extending in a first direction, thereby forming first lines extending in the first direction and memory cell materials self-aligned with the first lines and separated by the first trenches. The method further comprises burying an interlayer insulator in the first trenches to form a block body and stacking a second wiring material on the block body. The method also comprises forming a plurality of second parallel trenches in the block body with the second wiring material stacked thereon, the second trenches extending in a second direction crossing the first direction and having a depth reaching the upper surface of the first wiring material, thereby forming second lines extending in the second direction and memory cells self-aligned with the second lines and separated by the first and second trenches.

摘要翻译： 制造非易失性半导体存储器件的方法包括：形成第一布线材料; 以及在第一布线材料上堆叠存储单元材料，其构造每个包括可变电阻器的存储单元，其可操作以根据电阻的变化来非易失性地存储信息。 该方法还包括在第一布线材料和堆叠的存储单元材料中形成多个第一平行沟槽，第一沟槽沿第一方向延伸，从而形成沿第一方向延伸的第一线和与第一方向自对准的存储单元材料 第一条线和第一条沟分开。 该方法还包括在第一沟槽中埋设层间绝缘体以形成块体并将第二布线材料堆叠在块体上。 该方法还包括在堆叠在其上的第二布线材料的块体中形成多个第二平行沟槽，第二沟槽沿与第一方向交叉的第二方向延伸并且具有到达第一布线材料的上表面的深度，从而 形成沿着第二方向延伸的第二线和与第二线自对准并由第一和第二沟槽隔开的存储器单元。