摘要:
A surface acoustic wave filter element has a piezoelectric substrate; and a plurality of inter-digital transducer (IDT) electrodes formed on the piezoelectric substrate, wherein at least one of the plurality of IDT electrodes is connected to a balanced type terminal and other IDT electrodes are connected to balanced type terminals or unbalanced type terminals, and first wiring electrode means which is connected or to be connected to the at least one IDT electrode and second wiring electrode means which is connected or to be connected to the other IDT electrodes are disposed on planes different from each other.
摘要:
A surface acoustic wave filter element has a piezoelectric substrate; and a plurality of inter-digital transducer (IDT) electrodes formed on the piezoelectric substrate, wherein at least one of the plurality of IDT electrodes is connected to a balanced type terminal and other IDT electrodes are connected to balanced type terminals or unbalanced type terminals, and first wiring electrode means which is connected or to be connected to the at least one IDT electrode and second wiring electrode means which is connected or to be connected to the other IDT electrodes are disposed on planes different from each other.
摘要:
A surface acoustic wave filter element has a piezoelectric substrate; and a plurality of inter-digital transducer (IDT) electrodes formed on the piezoelectric substrate, wherein at least one of the plurality of IDT electrodes is connected to a balanced type terminal and other IDT electrodes are connected to balanced type terminals or unbalanced type terminals, and first wiring electrode means which is connected or to be connected to the at least one IDT electrode and second wiring electrode means which is connected or to be connected to the other IDT electrodes are disposed on planes different from each other.
摘要:
A surface acoustic wave filter element has a piezoelectric substrate; and a plurality of inter-digital transducer (IDT) electrodes formed on the piezoelectric substrate, wherein at least one of the plurality of IDT electrodes is connected to a balanced type terminal and other IDT electrodes are connected to balanced type terminals or unbalanced type terminals, and first wiring electrode means which is connected or to be connected to the at least one IDT electrode and second wiring electrode means which is connected or to be connected to the other IDT electrodes are disposed on planes different from each other.
摘要:
A surface acoustic wave filter element has a piezoelectric substrate; and a plurality of inter-digital transducer (IDT) electrodes formed on the piezoelectric substrate, wherein at least one of the plurality of IDT electrodes is connected to a balanced type terminal and other IDT electrodes are connected to balanced type terminals or unbalanced type terminals, and first wiring electrode means which is connected or to be connected to the at least one IDT electrode and second wiring electrode means which is connected or to be connected to the other IDT electrodes are disposed on planes different from each other.
摘要:
A first supporting section 30 is provided between a substrate section 40 and a second supporting section 20. The first supporting section 30 is structured by, e.g., a film formed from a material having a higher acoustic impedance than a piezoelectric body 11 and the substrate section 40, or a film formed from a material having a smaller Q value than the piezoelectric body 11 and substrate section 40. By inserting the first supporting section 30, most vibration from the second supporting section 20 toward the substrate section 40 is reflected (arrow a), and also a vibration having been transmitted to the substrate section 40 from the second supporting section 20 is prevented from reflecting at the bottom of the substrate section 40 and then returning in a direction of the vibration section 10 (arrow b).
摘要:
A series piezoelectric resonator 11 is connected in series between an input terminal 15a and an output terminal 15b. A first electrode of a parallel piezoelectric resonator 12a is connected to a connection point between the input terminal 15a and the series piezoelectric resonator 11, and a second electrode of the parallel piezoelectric resonator 12a is connected to a first terminal of an inductor 13a. A first electrode of a parallel piezoelectric resonator 12b is connected to a connection point between the series piezoelectric resonator 11 and the output terminal 15b, and a second electrode of the parallel piezoelectric resonator 12b is connected to a first terminal of an inductor 13b. Second terminals of the inductors 13a and 13b are grounded. An additional piezoelectric resonator 14 is connected between the second electrode of the parallel piezoelectric resonator 12a and the second electrode of the parallel piezoelectric resonator 12b.
摘要:
A piezoelectric resonator includes a substrate, a lower electrode provided on or above the substrate, a piezoelectric member provided on or above the lower electrode, an upper electrode provided on or above the piezoelectric member, and a cavity provided below a vibration member including the lower electrode, the piezoelectric member, and the upper electrode. In a case where a resonance frequency of vibration with a thickness of the vibration member being a half of a wavelength is taken as fr1, an average of ultrasonic velocity in a material forming the cavity is taken as Vc2, and a value determined based on the resonance frequency fr1 and the average of ultrasonic velocity Vc2 is λc (=Vc2/fr1), a depth t2 of the cavity is set as, ( 2 n - 1 ) × λ c 4 - λc 8 ≦ t2 ≦ ( 2 n - 1 ) × λ c 4 + λ c 8 , where n is an arbitrary natural number.
摘要:
A piezoeletric resonator includes: a substrate; a lower electrode formed on or above the substrate; a piezoeletric body formed on or above the lower electrode; an upper electrode formed on or above the piezoeletric body; and a cavity under a vibrating portion formed by the lower electrode, the piezoeletric body, and the upper electrode. Where a resonant frequency of vibration with a thickness of the vibrating portion being a half of a wavelength is taken as fr, an average of ultrasonic velocity in a material forming the cavity is taken as Vc, and a value determined based on the resonant frequency fr and the average of ultrasonic velocity Vc is taken as λc (=Vc/fr), a depth of the cavity is set so as to be equal to or larger than n×λc/2−λc/8 and equal to or smaller than n×λc/2+λc/8.
摘要:
The area of an opening C of a cavity 31 is equal to or greater than the area of a horizontal cross section D of a vibrating section 10. The vibrating section 10 is placed on a support section 20 at a position such that a vertical projection of the vibrating section 10 onto a substrate 30 is accommodated within the opening C of the cavity 31. Moreover, the sum of a vertical thickness t1 of the vibrating section 10 and a vertical thickness t2 of the support section 20 is equal to one wavelength of a resonance frequency fr of an acoustic resonator 1 (one wavelength=t1+t2), while the thickness t1 of the vibrating section 10 and the thickness t2 of the support section 20 are different from each other (t1≠t2). Thus, neither the thickness t1 of the vibrating section 10 nor the thickness t2 of the support section 20 is equal to the half wavelength of the resonance frequency fr.
摘要翻译:空腔31的开口C的面积等于或大于振动部分10的水平横截面D的面积。 振动部分10被放置在支撑部分20上,使得振动部分10在基片30上的垂直突起容纳在空腔31的开口C内。 此外,振动部10的垂直厚度t 1和支撑部20的垂直厚度t 2之和等于声谐振器1的共振频率fr的一个波长(一个波长= t 1 + t 2 ),而振动部10的厚度t 1和支撑部20的厚度t 2彼此不同(t 1> t 2)。 因此,振动部10的厚度t 1和支撑部20的厚度t 2都不等于共振频率fr的半波长。