公开(公告)号：US20080265975A1

公开(公告)日：2008-10-30

申请号：US12081976

申请日：2008-04-24

申请人： Hisashi Takasu ,  Takeshi Inoue ,  Tomonori Kimura ,  Takanari Sasaya

发明人： Hisashi Takasu ,  Takeshi Inoue ,  Tomonori Kimura ,  Takanari Sasaya

IPC分类号： H03K17/04

CPC分类号： H03K17/6871 ,  H03K17/08142 ,  H03K17/0822 ,  H03K17/165 ,  H03K17/284 ,  H03K17/6877 ,  H03K17/785 ,  H03K2217/0036

摘要： A method for controlling a vertical type MOSFET in a bridge circuit is provided to reduce diode power loss and improve a reverse recovery characteristic. The method includes controlling a forward voltage of a built-in diode of the vertical type MOSFET to be a first forward voltage by setting a gate voltage of the vertical MOSFET to a first gate voltage, so that the vertical type MOSFET is switched into a first off mode; and controlling the forward voltage of the built-in diode of the vertical type MOSFET to be a second forward voltage by setting the gate voltage of the vertical MOSFET to a second gate voltage, so that the vertical type MOSFET is switched into a second off mode.

摘要翻译： 提供一种用于控制桥式电路中的垂直型MOSFET的方法，以减少二极管功率损耗并提高反向恢复特性。 该方法包括通过将垂直MOSFET的栅极电压设置为第一栅极电压来将垂直型MOSFET的内置二极管的正向电压控制为第一正向电压，使得垂直型MOSFET切换到第一正向电压 关闭模式; 并且通过将垂直MOSFET的栅极电压设置为第二栅极电压，将垂直型MOSFET的内置二极管的正向电压控制为第二正向电压，使得垂直型MOSFET切换到第二截止模式 。

公开(公告)号：US07714624B2

公开(公告)日：2010-05-11

申请号：US12081976

申请日：2008-04-24

申请人： Hisashi Takasu ,  Takeshi Inoue ,  Tomonori Kimura ,  Takanari Sasaya

发明人： Hisashi Takasu ,  Takeshi Inoue ,  Tomonori Kimura ,  Takanari Sasaya

IPC分类号： H03K3/00

CPC分类号： H03K17/6871 ,  H03K17/08142 ,  H03K17/0822 ,  H03K17/165 ,  H03K17/284 ,  H03K17/6877 ,  H03K17/785 ,  H03K2217/0036

摘要： A method for controlling a vertical type MOSFET in a bridge circuit is provided to reduce diode power loss and improve a reverse recovery characteristic. The method includes controlling a forward voltage of a built-in diode of the vertical type MOSFET to be a first forward voltage by setting a gate voltage of the vertical MOSFET to a first gate voltage, so that the vertical type MOSFET is switched into a first off mode; and controlling the forward voltage of the built-in diode of the vertical type MOSFET to be a second forward voltage by setting the gate voltage of the vertical MOSFET to a second gate voltage, so that the vertical type MOSFET is switched into a second off mode.

摘要翻译： 提供一种用于控制桥式电路中的垂直型MOSFET的方法，以减少二极管功率损耗并提高反向恢复特性。 该方法包括通过将垂直MOSFET的栅极电压设置为第一栅极电压来将垂直型MOSFET的内置二极管的正向电压控制为第一正向电压，使得垂直型MOSFET切换到第一正向电压 关闭模式; 并且通过将垂直MOSFET的栅极电压设置为第二栅极电压来将垂直型MOSFET的内置二极管的正向电压控制为第二正向电压，使得垂直型MOSFET切换到第二截止模式 。

公开(公告)号：US20090206812A1

公开(公告)日：2009-08-20

申请号：US12372163

申请日：2009-02-17

申请人： Takanari Sasaya ,  Takeshi Inoue ,  Tomonori Kimura

发明人： Takanari Sasaya ,  Takeshi Inoue ,  Tomonori Kimura

IPC分类号： G05F1/10

CPC分类号： H02M3/1588 ,  H01L2224/0603 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H03K17/08142 ,  H03K17/12 ,  H03K17/14 ,  Y02B70/1466 ,  H01L2924/00

摘要： In a power switching circuit, a second commutation member has a second commutation path electrically connected in parallel to a first commutation path and a second diode provided in the second commutation path and electrically connected antiparallel to a semiconductor switching element. While the semiconductor switching element is off, the second commutation path allows a second current based on the inductive load to flow therethrough in a forward direction of the second diode within a commutation period. The second diode has a second reverse recovery time shorter than a first reverse recovery time of the first diode. A second inductance of the second commutation path is higher than a first inductance of the first commutation path.

摘要翻译： 在功率开关电路中，第二整流构件具有并联连接到第一换向路径的第二换向路径和设置在第二换向路径中并与半导体开关元件反并联电连接的第二二极管。 当半导体开关元件断开时，第二换向路径允许基于电感负载的第二电流在换向周期内沿第二二极管的正向流过。 第二二极管具有比第一二极管的第一反向恢复时间短的第二反向恢复时间。 第二换向路径的第二电感高于第一换向路径的第一电感。

公开(公告)号：US07778054B2

公开(公告)日：2010-08-17

申请号：US12372163

申请日：2009-02-17

申请人： Takanari Sasaya ,  Takeshi Inoue ,  Tomonori Kimura

发明人： Takanari Sasaya ,  Takeshi Inoue ,  Tomonori Kimura

IPC分类号： H02H7/122

CPC分类号： H02M3/1588 ,  H01L2224/0603 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H03K17/08142 ,  H03K17/12 ,  H03K17/14 ,  Y02B70/1466 ,  H01L2924/00

摘要： In a power switching circuit, a second commutation member has a second commutation path electrically connected in parallel to a first commutation path and a second diode provided in the second commutation path and electrically connected antiparallel to a semiconductor switching element. While the semiconductor switching element is off, the second commutation path allows a second current based on the inductive load to flow therethrough in a forward direction of the second diode within a commutation period. The second diode has a second reverse recovery time shorter than a first reverse recovery time of the first diode. A second inductance of the second commutation path is higher than a first inductance of the first commutation path.

摘要翻译： 在功率开关电路中，第二整流构件具有并联连接到第一换向路径的第二换向路径和设置在第二换向路径中并与半导体开关元件反并联电连接的第二二极管。 当半导体开关元件断开时，第二换向路径允许基于电感负载的第二电流在换向周期内沿第二二极管的正向流过。 第二二极管具有比第一二极管的第一反向恢复时间短的第二反向恢复时间。 第二换向路径的第二电感高于第一换向路径的第一电感。

公开(公告)号：US07122982B2

公开(公告)日：2006-10-17

申请号：US11137570

申请日：2005-05-26

申请人： Takanari Sasaya ,  Michiru Takahashi

发明人： Takanari Sasaya ,  Michiru Takahashi

IPC分类号： H02P6/08

CPC分类号： H02P7/0094 ,  H02P7/04 ,  Y10S388/909

摘要： A rotation information detection device detects rotation information of a DC motor based on a surge component waveform superimposed on a voltage waveform between the terminals of the DC motor or a current waveform of the DC motor, a circuit is provided which supplies a current of a current value Ipwm 45% during motor forward rotation or Ipwm 55% during reverse motor rotation to the motor over the period from when the motor starts braking operation to when it stops.

摘要翻译： 旋转信息检测装置基于叠加在直流电动机的端子或直流电动机的电流波形之间的电压波形上的浪涌分量波形来检测直流电动机的旋转信息，提供电流供给电流的电流 在电机正转时，从电机起动制动到止停期间电机正转时电机反转到电机时，电机正转时，I _{pwm 为45％。}

公开(公告)号：US06188526B1

公开(公告)日：2001-02-13

申请号：US09344333

申请日：1999-06-25

申请人： Takanari Sasaya ,  Takashi Kaneko ,  Nobuaki Kawahara

发明人： Takanari Sasaya ,  Takashi Kaneko ,  Nobuaki Kawahara

IPC分类号： G02B106

CPC分类号： G02B3/14 ,  G02B1/06 ,  G02B7/028

摘要： A variable focus lens device having a temperature compensation function whose construction is simple and which can be inexpensively manufactured. The device has a lens member including a lens container having a transparent elastic film, a transparent sealing member forming an internal volume, and a transparent liquid filling the internal volume, a stack-type piezoelectric actuator for varying the focus of the lens member by deforming the transparent elastic film by fluctuating the pressure inside the internal volume, and a tank connected to the internal volume by narrow passages. The tank and the narrow passages absorb temperature fluctuation components of the transparent liquid, which varies due to thermal expansion and contraction. The tank and the passages thereby form a temperature compensator, that, because the passages are narrow, does not react to sudden oscillating pressure components caused by the stack-type piezoelectric actuator.

摘要翻译： 一种具有温度补偿功能的可变焦距透镜装置，其结构简单并且可以廉价地制造。 该装置具有透镜构件，该透镜构件包括具有透明弹性膜的透镜容器，形成内部容积的透明密封构件和填充内部容积的透明液体，用于通过变形改变透镜构件的焦点的叠层型压电致动器 通过使内部容积内的压力发生变动而使透明弹性膜，以及通过狭窄的通路与内部容积连接的槽。 罐和窄通道吸收由于热膨胀和收缩而变化的透明液体的温度波动成分。 因此，罐和通道形成温度补偿器，因为通道窄，不会对由堆叠型压电致动器引起的突然的振荡压力分量做出反应。

公开(公告)号：US20060017412A1

公开(公告)日：2006-01-26

申请号：US11137570

申请日：2005-05-26

申请人： Takanari Sasaya ,  Michiru Takahashi

发明人： Takanari Sasaya ,  Michiru Takahashi

IPC分类号： H02P3/08

CPC分类号： H02P7/0094 ,  H02P7/04 ,  Y10S388/909

摘要： A rotation information detection device detects rotation information of a DC motor based on a surge component waveform superimposed on a voltage waveform between the terminals of the DC motor or a current waveform of the DC motor, a circuit is provided which supplies a current of a current value Ipwm 45% during motor forward rotation or Ipwm 55% during reverse motor rotation to the motor over the period from when the motor starts braking operation to when it stops.

公开(公告)号：US06191007B1

公开(公告)日：2001-02-20

申请号：US09066971

申请日：1998-04-28

申请人： Masaki Matsui ,  Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Kunihiro Onoda ,  Akiyoshi Asai ,  Takanari Sasaya ,  Takeshi Enya ,  Jun Sakakibara

发明人： Masaki Matsui ,  Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Kunihiro Onoda ,  Akiyoshi Asai ,  Takanari Sasaya ,  Takeshi Enya ,  Jun Sakakibara

IPC分类号： H01L21331

CPC分类号： H01L21/84 ,  H01L21/02667 ,  H01L21/2022 ,  H01L21/76243 ,  H01L21/76254 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76283 ,  H01L2221/68363

摘要： Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.

摘要翻译： 制造半导体衬底的方法，其中半导体器件用于形成半导体器件的半导体层形成在支撑衬底上，绝缘膜介于其之间，在形成掩埋图案结构的衬底上形成半导体层是可能的 大大增加了半导体层的膜厚均匀性和膜厚可控性，特别是当半导体层被形成为极薄膜时。 结果，可以实现半导体衬底的改进的质量和特性，并且可以将这种半导体衬底部署到各种用途上。