Cluster beam thin film deposition apparatus with thermionic electron
control
    3.
    发明授权
    Cluster beam thin film deposition apparatus with thermionic electron control 失效
    带有电子电子控制的聚光束光薄膜沉积装置

    公开(公告)号:US5099791A

    公开(公告)日:1992-03-31

    申请号:US560928

    申请日:1990-07-31

    IPC分类号: C23C14/32 C23C14/22 H05H3/00

    CPC分类号: C23C14/221 H05H3/00

    摘要: An apparatus for depositing, through evaporation, a thin film on a substrate disposed in a vacuum vessel by ionizing a beam of clusters emitted from an evaporation source and causing the ionized cluster beam to impinge on the substrate, comprises a thermionic emission portion for emitting thermoelectrons disposed in a plane orthogonal to the center axis of the cluster beam, a shield plate for preventing the cluster beam from striking the thermionic emission portion, and a reflection electrode for directing the thermoelectrons emitted from the thermionic emission portion toward the center axis of the cluster beam.

    摘要翻译: 一种用于通过蒸发沉积在设置在真空容器中的基底上的薄膜的装置,其通过离子化从蒸发源发射的聚束束并使得离子化的聚束束撞击在基底上,包括用于发射热电子的热离子发射部分 设置在与簇束的中心轴正交的平面中,用于防止簇束撞击热离子发射部的屏蔽板和用于将从热离子发射部射出的热电子朝向簇的中心轴引导的反射电极 光束。

    Semiconductor manufacturing apparatus
    4.
    发明授权
    Semiconductor manufacturing apparatus 失效
    半导体制造装置

    公开(公告)号:US5837094A

    公开(公告)日:1998-11-17

    申请号:US798117

    申请日:1997-02-12

    CPC分类号: H01L21/67748 H01L21/67253

    摘要: In a semiconductor manufacturing apparatus, the number of fine particles is counted by a particle monitor 15 mounted to a part of an exhaust pipe 12 for exhausting a gas in a process chamber 4, and an end point detection controller 31 observes the count value in time sequence to detect an end point time of plasma etching or plasma cleaning. Further, in a semiconductor manufacturing apparatus, it is possible to calibrate a detection accuracy of the particle monitor with high accuracy.

    摘要翻译: 在半导体制造装置中,通过安装在排气管12的一部分中的颗粒监测器15来计数微粒的数量,用于排出处理室4中的气体,并且终点检测控制器31及时地观察计数值 序列以检测等离子体蚀刻或等离子体清洁的终点时间。 此外,在半导体制造装置中,可以高精度地校准粒子监视器的检测精度。

    Apparatus for and method of forming thin film
    5.
    发明授权
    Apparatus for and method of forming thin film 失效
    装置和形成薄膜的方法

    公开(公告)号:US5211994A

    公开(公告)日:1993-05-18

    申请号:US892363

    申请日:1992-06-02

    CPC分类号: C23C14/54 C23C14/221

    摘要: A thin film forming apparatus has an evaporation source for emitting a cluster beam, an ionizing device for irradiating the cluster beam from the evaporation source with thermal electrons, thereby forming cluster ions, an accelerating device for accelerating the cluster ions so as to irradiate a substrate with the cluster ions together with neutral clusters, and cluster ion rate control device for periodically varying the rate of irradiation of the substrate with the cluster ions at a period which is longer than the time required for the cluster ions to reach the substrate from the ionizing device and which is shorter than the time required for forming a mono-atom or mono-molecular layer on the substrate, thereby controlling the time-mean of the rate of irradiation with the cluster ions.

    摘要翻译: 薄膜形成装置具有用于发射簇束的蒸发源,用于用热电子照射来自蒸发源的簇束的离子化装置,从而形成簇离子,用于加速簇离子以加速基板的加速装置 其中簇离子与中性簇和簇离子速率控制装置一起使用,以使簇离子周期性地改变衬底的照射速率,该时间长于簇离子从离子化到达衬底所需的时间 并且比在衬底上形成单原子或单分子层所需的时间短,从而控制簇离子的照射速率的时间平均。