摘要:
A thin film deposition apparatus for use in a semiconductor manufacturing process or the like, is provided to, in particular, deposit a diffusion barrier thin film onto a substrate having a concave portion with a relatively high aspect ratio (hereinafter referred to as a contact hole). In the thin film deposition apparatus, a small surface and point source or a ring-shaped source is employed, evaporation is performed under such a condition that the Knudsen number K.sub.n =.lambda./H (a ratio of a mean free path .lambda. of an evaporation material particle to a distance (H) between the evaporation source and the substrate) becomes 0.1 or more, and a relation of the substrate and the evaporation source is set according to the aspect ratio of the contact hole, resulting in deposition of the thin film with good coverage on a bottom surface of the contact hole.
摘要:
An evaporation source in which an evaporation material is vaporized and jetted through a nozzle having a gradually opening cross-section, whereby the size of atom clusters of the jetted vapor can be controlled.
摘要:
An apparatus for depositing, through evaporation, a thin film on a substrate disposed in a vacuum vessel by ionizing a beam of clusters emitted from an evaporation source and causing the ionized cluster beam to impinge on the substrate, comprises a thermionic emission portion for emitting thermoelectrons disposed in a plane orthogonal to the center axis of the cluster beam, a shield plate for preventing the cluster beam from striking the thermionic emission portion, and a reflection electrode for directing the thermoelectrons emitted from the thermionic emission portion toward the center axis of the cluster beam.
摘要:
In a semiconductor manufacturing apparatus, the number of fine particles is counted by a particle monitor 15 mounted to a part of an exhaust pipe 12 for exhausting a gas in a process chamber 4, and an end point detection controller 31 observes the count value in time sequence to detect an end point time of plasma etching or plasma cleaning. Further, in a semiconductor manufacturing apparatus, it is possible to calibrate a detection accuracy of the particle monitor with high accuracy.
摘要:
A thin film forming apparatus has an evaporation source for emitting a cluster beam, an ionizing device for irradiating the cluster beam from the evaporation source with thermal electrons, thereby forming cluster ions, an accelerating device for accelerating the cluster ions so as to irradiate a substrate with the cluster ions together with neutral clusters, and cluster ion rate control device for periodically varying the rate of irradiation of the substrate with the cluster ions at a period which is longer than the time required for the cluster ions to reach the substrate from the ionizing device and which is shorter than the time required for forming a mono-atom or mono-molecular layer on the substrate, thereby controlling the time-mean of the rate of irradiation with the cluster ions.