公开(公告)号：US20140070314A1

公开(公告)日：2014-03-13

申请号：US13964223

申请日：2013-08-12

Applicant: Hitachi, Ltd.

Inventor： Shinji Shirakawa ,  Junichi Sakano

IPC: H01L27/092

CPC classification number: H01L27/0922 ,  H01L27/1203 ,  H01L29/402 ,  H01L29/7835

Abstract: There is provided an MOSFET having a large current density, which can be mixed with a logic circuit, and is used in a circuit that conducts the operation of applying a negative voltage to a drain electrode. An electrode surrounded by an insulating film is formed, at an intermediate position of a gate electrode and a drain of the MOSFET formed on an SOI substrate having a drain electrode applied with a negative voltage, and the electrode is connected to the ground to prevent a withstand voltage from being lowered which is caused by an increase in impurity concentration of a drift region. A drift resistance is lowered to improve the current density.

Abstract translation: 提供了具有大电流密度的MOSFET，其可以与逻辑电路混合，并且被用于传导向漏电极施加负电压的操作的电路。 在绝缘膜周围形成的电极形成在形成在具有施加了负电压的漏电极的SOI衬底上的MOSFET的栅电极和漏极的中间位置处，并且电极连接到地，以防止 由漂移区域的杂质浓度的增加引起的耐压降低。 漂移电阻降低以提高电流密度。

公开(公告)号：US11152887B2

公开(公告)日：2021-10-19

申请号：US16629328

申请日：2018-03-05

Applicant: Hitachi, Ltd.

Inventor： Yoshinobu Kimura ,  Kazuki Tani ,  Takashi Ogawa ,  Hiroshi Suzuki ,  Junichi Sakano

IPC: H02P29/68 ,  H02P27/08

Abstract: A temperature abnormality of the power module is accurately detected. A power conversion device including a power semiconductor module with a switching element, includes: a gate driver circuit configured to drive a switching element and transmitting a response signal upon a switching operation of the switching element; a control unit device configured to output to a gate driver circuit an instruction signal for switching; a temperature detection unit configured to calculate a bonding temperature of the switching element based on a response signal to the instruction signal; and a calculation unit configured to determine a state of a power semiconductor module according to a bonding temperature calculated by the temperature detection unit and the response signal.

公开(公告)号：US11016138B2

公开(公告)日：2021-05-25

申请号：US16098599

申请日：2016-05-09

Applicant: Hitachi, Ltd.

Inventor： Yoshinobu Kimura ,  Junichi Sakano ,  Kimihisa Furukawa ,  Takashi Ogawa ,  Renichi Yamada

IPC: G01R31/26 ,  B60L3/00 ,  G01K7/01 ,  H03M1/12

Abstract: A diagnostic system for a power conversion apparatus including a semiconductor device and performing a switching operation for carrying and interrupting a main current to a main current is disclosed. This system includes a trigger circuit that acquires reference time for the switching operation; and a delay time calculation circuit that acquires first time at which the main current takes a first main current set value and second time at which the main current takes a second main current set value, and that detects numerical data about a difference between the first time and the reference time and numerical data about a difference between the second time and the reference time.

公开(公告)号：US10122299B2

公开(公告)日：2018-11-06

申请号：US15563964

申请日：2015-04-08

Applicant: Hitachi, Ltd.

Inventor： Takashi Ogawa ,  Kimihisa Furukawa ,  Junichi Sakano

IPC: H02M1/08 ,  H02M11/00 ,  G01R31/36 ,  G08C19/36 ,  G01R31/44 ,  H02M1/32 ,  H02M1/00

Abstract: The present invention relates to a power conversion device in the power electronics field. An object of the present invention is to provide a technique of determining whether a switching element operates normally or not from a gate monitor signal of a power conversion device, and predicting a sign of a failure by obtaining the temperature of the switching element from a transient state of the switching voltage of the power conversion circuit as a component of the power conversion device without using a new signal path.

公开(公告)号：US10229974B2

公开(公告)日：2019-03-12

申请号：US15560428

申请日：2015-05-18

Applicant: HITACHI, LTD.

Inventor： Mieko Matsumura ,  Junichi Sakano ,  Naoki Tega ,  Yuki Mori ,  Haruka Shimizu ,  Keisuke Kobayashi

IPC: H01L29/16 ,  H01L29/73 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/417

Abstract: To solve a problem of realizing a large current and highly reliable power semiconductor device while shrinking a unit cell. A semiconductor device according to the present invention includes a plurality of p-type body regions extending in a first direction. The semiconductor device further includes: a JFET region formed to extend in the first direction between p-type body regions which are adjacent to each other in a second direction orthogonal to the first direction; an n+-type source region formed to extend in the first direction within a p-type body region and separate from an end side surface of the p-type body; and a channel region formed to extend in the first direction and in a top layer portion of a p-type body region between an end side surface of the p-type body region and an end side surface of an n+-type source region.

公开(公告)号：US10122296B2

公开(公告)日：2018-11-06

申请号：US15123212

申请日：2015-06-22

Applicant: HITACHI, LTD.

Inventor： Junichi Sakano ,  Kimihisa Furukawa ,  Takashi Ogawa ,  Hisashi Endou

IPC: H02M7/53 ,  H02M7/539 ,  H02M7/48 ,  H02M1/32 ,  H02M1/00

Abstract: A diagnostic system for a power converter which includes a semiconductor device, and which performs a switching operation between conduction and interruption of the principal current flowing through a main circuit. The diagnostic system includes a current change amount calculation circuit for obtaining numeric data which reflects a current change amount of the principal current per unit time, a determination circuit for determining a state of the power converter by comparing the numeric data with a reference value, and an output circuit for outputting a determination result of the determination circuit.

公开(公告)号：US09793011B2

公开(公告)日：2017-10-17

申请号：US14646223

申请日：2012-11-21

Applicant: Hitachi, Ltd.

Inventor： Ryou Ishibashi ,  Takashi Naitou ,  Motomune Kodama ,  Takuya Aoyagi ,  Tetsushi Hino ,  Motoo Aoyama ,  Tsuneyuki Hashimoto ,  Katsuhito Takahashi ,  Junichi Sakano ,  Hiroshi Nakano

IPC: B32B17/06 ,  G21C3/34 ,  H05K1/03 ,  H05K1/18 ,  G21C3/07 ,  H05K7/20 ,  C03C8/18 ,  G21C3/20 ,  H01L23/15 ,  H01L23/473 ,  F28F19/02 ,  F28F21/00 ,  F28F21/04 ,  C03C8/14 ,  C03C8/24 ,  C04B37/02 ,  H01L23/373 ,  F28D7/16

CPC classification number: G21C3/34 ,  C03C8/14 ,  C03C8/18 ,  C03C8/24 ,  C04B37/025 ,  C04B2237/10 ,  C04B2237/365 ,  C04B2237/38 ,  C04B2237/403 ,  C04B2237/405 ,  C04B2237/407 ,  C04B2237/765 ,  C04B2237/84 ,  F28D7/16 ,  F28F19/02 ,  F28F21/006 ,  F28F21/04 ,  F28F2255/06 ,  G21C3/07 ,  G21C3/20 ,  H01L23/15 ,  H01L23/3735 ,  H01L23/473 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H05K1/0306 ,  H05K1/18 ,  H05K7/20509 ,  Y02E30/40 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Provided is a structure including a first member (2); a second member (3) disposed opposite to the first member (2); and a glass layer (4) disposed between the first member (2) and the second member (3) so as to bond the first member (2) and the second member (3). A glass transition point of the glass layer (4) is lower than a temperature of the glass layer (4) under operation. In the glass layer (4), at least either of ceramic and metallic particles 4b, 4c is dispersed. In a temperature region lower than the glass transition point of the glass layer (4), a thermal expansion coefficient thereof falls in between thermal expansion coefficients of the first member (2) and the second member (3). This allows thermal strain caused within the structure (1) to be reduced when the structure (1) is operated at a higher temperature than a room temperature.