公开(公告)号：US20190088453A1

公开(公告)日：2019-03-21

申请号：US15902799

申请日：2018-02-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasushi SONODA ,  Naoki YASUI ,  Motohiro TANAKA ,  Koichi YAMAMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber, a radio frequency power source, and a magnetic-field generation unit. In the processing chamber, a sample is subjected to plasma processing. The radio frequency power source supplies radio frequency power for a microwave. The magnetic-field generation unit forms a magnetic field for generating plasma by an interaction with the microwave. The magnetic-field generation unit includes a first power source and a second power source. The first power source causes a current to flow in a first magnetic-field forming coil configured to forma magnetic field in the processing chamber. The second power source causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber. Sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil. A response time constant of the first power source is smaller than a response time constant of the second power source.

公开(公告)号：US20190088452A1

公开(公告)日：2019-03-21

申请号：US15919682

申请日：2018-03-13

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazuya YAMADA ,  Koichi YAMAMOTO ,  Naoki YASUI ,  Norihiko IKEDA ,  Isao MORI

IPC: H01J37/32 ,  H01L21/67

Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.

公开(公告)号：US20140042155A1

公开(公告)日：2014-02-13

申请号：US13787950

申请日：2013-03-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Koichi YAMAMOTO ,  Atsushi ITOU

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4622 ,  H05H2001/4682

Abstract: A plasma processing apparatus includes: a high voltage power supply for supplying a high voltage power to a magnetron; and a detector for detecting a microwave output from the magnetron, wherein based on a result of comparing a signal, which is obtained by adding an output from the detector to an AC component of a current detected from an output of the high voltage power supply, with a setting value of the output of the high voltage power supply, the output of the high voltage power supply is adjusted.

Abstract translation: 等离子体处理装置包括：高压电源，用于向磁控管提供高压电力; 以及用于检测来自磁控管的微波输出的检测器，其中基于将来自检测器的输出与从高压电源的输出检测的电流的AC分量相加得到的信号进行比较的结果， 利用高压电源的输出的设定值，调整高压电源的输出。

公开(公告)号：US20150371876A1

公开(公告)日：2015-12-24

申请号：US14626921

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiromitsu TERAUCHI ,  Tsutomu IIDA ,  Koichi YAMAMOTO

IPC: H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/32136 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3299

Abstract: A plasma processing apparatus is provided including a processing chamber disposed within a vacuum vessel to form plasma therein, a processing stage disposed in the processing chamber to mount a wafer thereon, a first power supply for outputting an electric field supplied to form the plasma and forming an electric field of a first frequency supplied with repetition of a high output and a low output during processing of the wafer, a second power supply for supplying power of a second frequency to an electrode disposed within the processing stage, and a control device for causing a first value between load impedance at time of the high output of the electric field and load impedance at time of the low output of the electric field to match with impedance of the first power supply.

Abstract translation: 提供了一种等离子体处理装置，包括设置在真空容器内以在其中形成等离子体的处理室，设置在处理室中以将晶片安装在其上的处理台，用于输出供应以形成等离子体的电场的第一电源和形成 在晶片处理期间提供重复高输出和低输出的第一频率的电场，用于向设置在处理级内的电极提供第二频率的功率的第二电源，以及用于引起 在电场的高输出时的负载阻抗和电场的低输出时的负载阻抗与第一电源的阻抗相匹配的第一值。

公开(公告)号：US20150357210A1

公开(公告)日：2015-12-10

申请号：US14832239

申请日：2015-08-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahito MORI ,  Akira HIRATA ,  Koichi YAMAMOTO ,  Takao ARASE

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32926 ,  H01J37/3299

Abstract: There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value.

Abstract translation: 提供了一种用于控制等离子体处理装置的方法，即使在多步骤蚀刻中，也能够在保持低污染和高均匀性的同时消除对共振点的初步研究。 在一种用于控制等离子体处理装置的方法中，包括调整携带到对侧天线电极的射频偏置电流的步骤，该方法包括以下步骤：将可变元件的电抗设定为初始值; 检测携带到所述对置天线电极的偏置电流; 搜索检测到的电流的最大值; 并将可变元件的电抗值从最大值调整到设定值，然后固定该值。