公开(公告)号：US09934960B2

公开(公告)日：2018-04-03

申请号：US15059591

申请日：2016-03-03

申请人： Hitachi Kokusai Electric Inc.

发明人： Hideki Horita ,  Risa Yamakoshi ,  Masato Terasaki

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/4408 ,  C23C16/45502 ,  C23C16/45527 ,  C23C16/45561 ,  H01L21/02211 ,  H01L21/0228

摘要： A technique capable of suppressing the generation of foreign matter in a process container involves a method of manufacturing a semiconductor device including: (a) supplying a source gas to a substrate in a process container; (b) supplying an inert gas to an inner wall of an opening of the process container at a first flow rate while performing (a); (c) supplying a reactive gas to the substrate; and (d) supplying the inert gas to the inner wall at a second flow rate lower than the first flow rate while performing (c).

公开(公告)号：US11041240B2

公开(公告)日：2021-06-22

申请号：US15928817

申请日：2018-03-22

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Kosuke Takagi ,  Risa Yamakoshi ,  Hideki Horita ,  Atsushi Hirano

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/40 ,  C23C16/44

摘要： There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.

公开(公告)号：US10607833B2

公开(公告)日：2020-03-31

申请号：US15376944

申请日：2016-12-13

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Katsuyoshi Harada ,  Takashi Ozaki ,  Masato Terasaki ,  Risa Yamakoshi ,  Satoshi Shimamoto ,  Jiro Yugami ,  Yoshiro Hirose

IPC分类号： H01L21/02 ,  H01L29/66 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52

摘要： There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act of supplying the precursor gas includes a time period in which the precursor gas and a second oxygen-containing gas are simultaneously supplied to the substrate.

公开(公告)号：US10513775B2

公开(公告)日：2019-12-24

申请号：US15642791

申请日：2017-07-06

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Risa Yamakoshi ,  Masato Terasaki ,  Takashi Ozaki ,  Naonori Akae ,  Hideki Horita

IPC分类号： C23C16/455 ,  C23C16/30 ,  H01L21/67 ,  H01L21/02 ,  C23C16/44 ,  H01L21/677

摘要： A method of manufacturing a semiconductor device, includes: forming an oxynitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate through a first nozzle, supplying a nitriding gas to the substrate through a second nozzle, and supplying an oxidizing gas to the substrate through a third nozzle, wherein in the act of supplying the nitriding gas, an inert gas is supplied from at least one of the first nozzle and the third nozzle at a first flow rate, and in the act of supplying the oxidizing gas, an inert gas is supplied from the second nozzle at a second flow rate larger than the first flow rate.

公开(公告)号：US11450524B2

公开(公告)日：2022-09-20

申请号：US15921343

申请日：2018-03-14

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Kosuke Takagi ,  Risa Yamakoshi ,  Takanori Ueno

IPC分类号： C23C16/40 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458

摘要： There is provided a technique that includes a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element, a first nozzle configured to supply a precursor containing the main element to the substrate in the process chamber, and a second nozzle configured to supply a reactant to the substrate in the process chamber. The first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction. An opening area of the first ceiling hole is larger than an opening area of each of the plurality of first side holes.

公开(公告)号：US10081868B2

公开(公告)日：2018-09-25

申请号：US15211583

申请日：2016-07-15

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Kosuke Takagi ,  Ryota Sasajima ,  Shintaro Kogura ,  Naonori Akae ,  Risa Yamakoshi ,  Toshiki Fujino ,  Masato Terasaki ,  Masayoshi Minami

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C16/455 ,  C23C16/24 ,  H01L21/02

CPC分类号： C23C16/45563 ,  C23C16/24 ,  C23C16/30 ,  C23C16/455 ,  C23C16/45531 ,  C23C16/45578 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/0228

摘要： Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.

公开(公告)号：US09905413B2

公开(公告)日：2018-02-27

申请号：US15453163

申请日：2017-03-08

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Risa Yamakoshi ,  Takashi Ozaki ,  Masato Terasaki ,  Naonori Akae ,  Hideki Horita

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/455

CPC分类号： H01L21/0214 ,  C23C16/308 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45527 ,  C23C16/45531 ,  H01L21/02211 ,  H01L21/0228

摘要： A method of manufacturing a semiconductor device may include: performing a cycle a predetermined number of times to form an oxynitride film on a substrate, the cycle including: (a) supplying a source gas to the substrate via a first nozzle; and (b) supplying a nitriding gas and an oxidizing gas to the substrate via a second nozzle different from the first nozzle, wherein (a) and (b) are performed non-simultaneously, wherein (b) may include: (b-1) supplying only the oxidizing gas while suspending a supply of the nitriding gas; and (b-2) simultaneously supplying the nitriding gas and the oxidizing gas, wherein (b-1) and (b-2) are consecutively performed.