公开(公告)号：US20060127370A1

公开(公告)日：2006-06-15

申请号：US10532579

申请日：2003-10-31

申请人： Hitoshi Niwa ,  Kazuya Ogawa

发明人： Hitoshi Niwa ,  Kazuya Ogawa

IPC分类号： A61K35/12 ,  C12N5/08

CPC分类号： C12N5/0606 ,  C12N2500/44 ,  C12N2501/01 ,  C12N2501/235 ,  C12N2501/35 ,  C12N2501/85 ,  C12N2501/855

摘要： The invention aims to proliferate or establish undifferentiated pluripotent stem cells that retain their differentiation potency by culturing pluripotent stem cells in a medium free of a feeder cell, or a serum. The aim is attained by using a culture medium for pluripotent stem cells comprising the known ingredients, which is supplemented with an inhibitor of an adenylate cyclase activity.

摘要翻译： 本发明旨在通过在不含饲养细胞或血清的培养基中培养多能干细胞来增殖或建立保持其分化潜能的未分化多能干细胞。 目的是通过使用包含已知成分的多能干细胞的培养基来实现，该成分补充有腺苷酸环化酶活性的抑制剂。

公开(公告)号：US07700352B2

公开(公告)日：2010-04-20

申请号：US10532579

申请日：2003-10-31

申请人： Hitoshi Niwa ,  Kazuya Ogawa

发明人： Hitoshi Niwa ,  Kazuya Ogawa

IPC分类号： C12N5/00 ,  C12N5/02 ,  C12N5/04

CPC分类号： C12N5/0606 ,  C12N2500/44 ,  C12N2501/01 ,  C12N2501/235 ,  C12N2501/35 ,  C12N2501/85 ,  C12N2501/855

摘要： The invention aims to proliferate or establish undifferentiated pluripotent stem cells that retain their differentiation potency by culturing pluripotent stem cells in a medium free of a feeder cell, or a serum. The aim is attained by using a culture medium for pluripotent stem cells comprising the known ingredients, which is supplemented with an inhibitor of an adenylate cyclase activity.

摘要翻译： 本发明旨在通过在不含饲养细胞或血清的培养基中培养多能干细胞来增殖或建立保持其分化潜能的未分化多能干细胞。 目的是通过使用包含已知成分的多能干细胞的培养基来实现，该成分补充有腺苷酸环化酶活性的抑制剂。

公开(公告)号：US5957840A

公开(公告)日：1999-09-28

申请号：US943114

申请日：1997-10-03

申请人： Harutoshi Terasawa ,  Hitoshi Niwa

发明人： Harutoshi Terasawa ,  Hitoshi Niwa

IPC分类号： A61B5/0245 ,  A61B5/0416 ,  A61B5/00

CPC分类号： A61B5/0416 ,  A61B5/6816 ,  Y10T24/44419

摘要： A pinch device for detecting a biomedical signal which pinches a measuring site of a living body in order to detect a biomedical signal, includes a pair of body members which are opposed to each other, said body members being rotatably coupled to each other via a shaft portion, a movable member mounted to a tip end of one of said paired body members so as to be rotatable, and said movable member having a contact face opposed to another contact face which is formed at a tip end of another one of said paired body members, and a spring member urging said contact face of said movable member and said other contact face of said body member which is opposed to said movable member, in an approaching direction.

摘要翻译： 一种用于检测夹住生物体的测量部位以检测生物医学信号的生物医学信号的夹持装置，包括彼此相对的一对主体部件，所述主体部件经由轴彼此可旋转地连接 所述可动构件安装到所述成对本体构件中的一个的前端以可旋转，并且所述可动构件具有与形成在所述成对体中的另一个的前端的另一个接触面相对的接触面 以及弹簧构件，其沿接近的方向推动与所述可动构件相对的所述主体构件的所述可动构件和所述另一个接触面的所述接触面。

公开(公告)号：US4834052A

公开(公告)日：1989-05-30

申请号：US96242

申请日：1987-09-08

申请人： Makoto Hori ,  Hitoshi Niwa ,  Hirokatsu Mukai ,  Toshiatsu Nagaya ,  Naoto Miwa ,  Itsuhei Ogata

发明人： Makoto Hori ,  Hitoshi Niwa ,  Hirokatsu Mukai ,  Toshiatsu Nagaya ,  Naoto Miwa ,  Itsuhei Ogata

IPC分类号： C04B35/468 ,  F02M31/135 ,  H01C7/02 ,  H05B3/14

CPC分类号： H01C7/025 ,  C04B35/4682 ,  F02M31/135 ,  H05B3/141 ,  Y02T10/126

摘要： Anti-reducing semiconducting porcelain having a positive temperature coefficient of resistance comprises a barium titanate composition, and a flux containing 0.14 to 2.88 parts by weight of TiO.sub.2 0.1 to 1.6 parts by weight of Al.sub.2 O.sub.3 and 0.1 to 1.6 parts by weight of SiO.sub.2 per 100 parts by weight of the barium titanate composition. It has a high positive temperature coefficient of resistance which does not show any appreciable change in the presence of a reducing atmosphere, such as hydrogen gas or gasified gasoline. It need not be isolated from a reducing atmosphere by a plastic or metallic enclosure, but can be exposed thereto. The flux may further contain a zinc, potassium or lithium compound.

摘要翻译： 具有正温度系数电阻的抗还原性半导体陶瓷包含钛酸钡组合物，含有0.14〜2.88重量份TiO 2 + L，0.1〜1.6重量份Al 2 O 3和0.1〜1.6重量份SiO 2 每100重量份的钛酸钡组合物。 具有高正温度系数的电阻，在还原性气氛如氢气或气化汽油的存在下不显示任何明显的变化。 它不需要通过塑料或金属外壳从还原气氛中分离，但可以暴露于其中。 焊剂还可以含有锌，钾或锂化合物。

公开(公告)号：US4803345A

公开(公告)日：1989-02-07

申请号：US072226

申请日：1987-07-10

申请人： Hiroki Hoshizaki ,  Kazuo Oyobe ,  Hirofumi Suzuki ,  Nobuaki Kawahara ,  Hitoshi Niwa ,  Terutaka Kageyama

发明人： Hiroki Hoshizaki ,  Kazuo Oyobe ,  Hirofumi Suzuki ,  Nobuaki Kawahara ,  Hitoshi Niwa ,  Terutaka Kageyama

IPC分类号： F01N3/027 ,  F02M31/125 ,  H05B3/06 ,  H05B3/10

CPC分类号： H05B3/06 ,  F01N3/027 ,  F02M31/125 ,  Y02T10/126 ,  Y10T29/49101

摘要： A ceramic heater body is formed in a plate shape, and has electrode attaching portions at both ends of the heater body. A plurality of openings are formed in the electrode attaching portion, and a metallized layer is formed on the inner peripheral surface of each of the openings. Electrodes having a plurality of wires are connected to the electrode attaching portions, for supplying power to the heater body. The metal wires are inserted into the openings formed having the metallized layers on the inner peripheral surfaces, and are secured by brazing to the metallized layers. The diameter of the metal wire is set to 0.5 to 3 mm, and the metal wires are buried in the openings, at a depth of 1 to 5 mm.

摘要翻译： 陶瓷加热器主体形成为板状，并且在加热器主体的两端具有电极附着部。 多个开口形成在电极附着部分中，金属化层形成在每个开口的内周面上。 具有多个电线的电极连接到电极附着部分，用于向加热器主体供电。 将金属线插入形成为在内周面上具有金属化层的开口中，并且通过钎焊固定到金属化层。 将金属线的直径设定为0.5〜3mm，将金属线埋入开口内，深度为1〜5mm。

公开(公告)号：US5585304A

公开(公告)日：1996-12-17

申请号：US293415

申请日：1994-08-02

申请人： Yutaka Hayashi ,  Kunihiro Takahashi ,  Hiroaki Takasu ,  Yoshikazu Kojima ,  Hitoshi Niwa ,  Nobuyoshi Matsuyama ,  Yomoyuki Yoshino ,  Masaaki Kamiya

发明人： Yutaka Hayashi ,  Kunihiro Takahashi ,  Hiroaki Takasu ,  Yoshikazu Kojima ,  Hitoshi Niwa ,  Nobuyoshi Matsuyama ,  Yomoyuki Yoshino ,  Masaaki Kamiya

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/30 ,  H01L21/762 ,  H01L21/302

CPC分类号： H01L21/76251 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/148 ,  Y10S438/977

摘要： A semiconductor wafer is comprised of a transparent layer interposed between a thin silicon layer and a thick silicon layer. Silicon islands are formed from the thin silicon layer on the transparent layer. Device elements are formed in the silicon islands. Thereafter, the thick silicon layer which is a support layer is etched away to form a transparent region on the wafer. The wafer is constructed to avoid elimination or destruction of the transparent layer during the course of formation of the silicon islands and during the course of etching of the rear thick silicon plate. The transparent layer is comprised of a silicon nitride film or a silicon carbide film. Alternatively, the transparent layer is comprised of a silicon oxide film covered by a silicon nitride film or a silicon carbide film on one or both of the upper and lower faces of the silicon oxide film.

摘要翻译： 半导体晶片由介于薄硅层和厚硅层之间的透明层构成。 硅岛由透明层上的薄硅层形成。 器件元件形成在硅岛中。 此后，作为支撑层的厚硅层被蚀刻掉以在晶片上形成透明区域。 构造晶片以避免在形成硅岛的过程中和在后厚硅板的蚀刻过程中消除或破坏透明层。 透明层由氮化硅膜或碳化硅膜构成。 或者，透明层由在氧化硅膜的上表面和下表面的一个或两个上由氮化硅膜或碳化硅膜覆盖的氧化硅膜构成。

公开(公告)号：US5486708A

公开(公告)日：1996-01-23

申请号：US264635

申请日：1994-06-23

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US4723069A

公开(公告)日：1988-02-02

申请号：US907818

申请日：1986-09-16

申请人： Hiroki Hoshizaki ,  Kazuo Oyobe ,  Hirofumi Suzuki ,  Nobuaki Kawahara ,  Terutaka Kageyama ,  Hitoshi Niwa ,  Shinichi Takeshima ,  Yoshihiko Imamura ,  Kiyoshi Kobashi ,  Kenichiro Takama

发明人： Hiroki Hoshizaki ,  Kazuo Oyobe ,  Hirofumi Suzuki ,  Nobuaki Kawahara ,  Terutaka Kageyama ,  Hitoshi Niwa ,  Shinichi Takeshima ,  Yoshihiko Imamura ,  Kiyoshi Kobashi ,  Kenichiro Takama

IPC分类号： H05B3/03 ,  F01N3/02 ,  F01N3/027 ,  H05B3/14 ,  H05B3/06 ,  F23Q7/10

CPC分类号： F01N3/027 ,  H05B3/141

摘要： A ceramic heater for regenerating a fine particle collecting filter which is exposed to exhaust gases at elevated temperatures. This ceramic heater comprises two electrode potions, a heat generation portion connected to the two electrode portions and a holding projection portion of a ceramic heater connected to the side of the heat generating portion. The two electrode portions, the heat generating portion and the holding projection portion are formed integrally.

摘要翻译： 一种陶瓷加热器，用于再生在高温下暴露于废气中的微粒收集过滤器。 该陶瓷加热器包括两个电极部分，连接到两个电极部分的发热部分和连接到发热部分一侧的陶瓷加热器的保持突起部分。 两个电极部分，发热部分和保持突出部分一体地形成。

公开(公告)号：US5728591A

公开(公告)日：1998-03-17

申请号：US460536

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof. Thereafter, the metal film is removed to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes. A substrate is then arranged opposite to the transparent insulating thin film to define a gap therebetween, and an electrooptical material is disposed in the gap.

摘要翻译： 一种制造光阀装置的方法包括在半导体衬底的表面上形成透明绝缘薄膜层，并在透明绝缘薄膜层的表面上形成单晶半导体薄膜。 然后去除单晶半导体薄膜的一部分，并且在去除了单晶半导体薄膜的区域上，在透明绝缘薄膜层上形成至少一个像素电极。 然后在单晶半导体薄膜中形成驱动单元。 此后，在对应于像素电极和驱动单元的区域，在半导体衬底的表面上使用粘合剂层叠载体衬底。 然后去除半导体衬底以暴露透明绝缘薄膜层的表面，并且在其暴露表面上形成通孔和金属膜。 此后，去除金属膜以形成遮光层，用于覆盖由驱动单元占据的透明绝缘薄膜层的至少一部分区域，并形成用于通过贯通孔连接到驱动单元的电极焊盘， 孔。 然后将衬底布置成与透明绝缘薄膜相对以在其间形成间隙，并且在该间隙中设置电光材料。

公开(公告)号：US5618739A

公开(公告)日：1997-04-08

申请号：US459834

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： C25F3/04 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84

CPC分类号： G02F1/13454 ,  C25F3/04 ,  H01L21/76264 ,  H01L27/1214 ,  H01L29/66772 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363

摘要： A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.

摘要翻译： 一种制造半导体器件的方法包括：通过在临时硅衬底的表面上沉积二氧化硅绝缘膜来形成SOI衬底，将绝缘膜的表面上的单晶硅的半导体衬底热粘合，并且研磨半导体 衬底以形成单晶半导体薄膜。 然后在单晶半导体薄膜中形成半导体集成电路。 此后，支撑基板以与临时基板相对的半导体集成电路的表面面对面的方式固定地粘接。 然后移除临时衬底以暴露绝缘膜的表面。 然后对绝缘膜的暴露表面进行至少包括形成电极的处理。