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公开(公告)号：US5246802A
公开(公告)日：1993-09-21
申请号：US788568
申请日：1991-11-06
IPC分类号： C23C14/06 , C23C14/34 , G03F1/22 , H01L21/027 , H01L21/30
CPC分类号： G03F1/22 , C23C14/0635 , C23C14/3414
摘要： An X-ray permeable membrane for an X-ray lithographic mask consisting of an inorganic thin film obtained by the sputtering method using a target and consisting of silicon carbide and carbon, said target consisting of silicon carbide and carbon in a molar ratio of 99.9:0.1 to 70:30, having a transmission of at least 37% at a light wavelength of 633 nm and a tensile strength of 1.times.10.sup.8 to 1.times.10.sup.10 dyn/cm.sup.2, and the membrane consisting of a silicon carbide constituted form silicon and carbon in a molar ratio in the range form 50.1:49.9 to 49.9:50.1.
摘要翻译： 一种用于X射线光刻掩模的X射线透过膜，其由通过使用靶的溅射法由碳化硅和碳组成的无机薄膜组成，所述靶由碳化硅和碳组成，摩尔比为99.9： 0.1至70:30，在633nm的光波长和1×10 8至1×10 10 dyn / cm 2的透光率下具有至少37％的透射率，并且该膜由以硅和碳组成的摩尔比构成的碳膜 范围为50.1：49.9至49.9：50.1。
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公开(公告)号：US5691088A
公开(公告)日：1997-11-25
申请号：US949389
申请日：1992-09-22
申请人： Yoshihiro Kubota , Meguru Kashida , Yoshihiko Nagata , Hitoshi Noguchi , Yuichi Hamada , Kimitaka Kumagae
发明人： Yoshihiro Kubota , Meguru Kashida , Yoshihiko Nagata , Hitoshi Noguchi , Yuichi Hamada , Kimitaka Kumagae
CPC分类号： G03F1/62 , Y10T428/161 , Y10T428/28 , Y10T428/2852
摘要： Disclosed is a frame-supported pellicle for dust-proofing of a photolithographic photomask used for patteriwse light exposure in the manufacturing process of, for example, semiconductor devices, which comprises (a) a frame member, (b) a transparent polymeric film supported by the frame member and (c) a coating layer of a sticky adhesive on one surface of the polymeric film to capture any dust particles in the space between the photomask and the pellicle. The inventive pellicle is imparted with a greatly improved serviceable life with stability against ultraviolet irradiation relative to the adhesive coating layer which is formed from a specific organo-polysiloxane-based adhesive composition.
摘要翻译： 公开了一种用于防止在例如半导体器件的制造过程中用于眩光曝光的光刻光掩模的框架支撑的防护薄膜，其包括（a）框架构件，（b）由 框架构件和（c）在聚合物膜的一个表面上的粘性粘合剂的涂层以捕获光掩模和防护薄膜之间的空间中的任何灰尘颗粒。 赋予本发明的防护薄膜相对于由特定的有机聚硅氧烷类粘合剂组合物形成的粘合剂涂层，具有大大改善的使用寿命，具有抗紫外线照射的稳定性。
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3.发明授权Frame-supported pellicle for photolithography, comprising a fluorocarbon containing organopolysiloxane based adhesive 失效用于光刻的框架支撑防护薄膜组件，包括含有氟聚合物的基于有机聚硅氧烷的粘合剂
公开(公告)号：US5300348A
公开(公告)日：1994-04-05
申请号：US959032
申请日：1992-10-08
申请人： Yoshihiro Kubota , Meguru Kashida , Yoshihiko Nagata , Hitoshi Noguchi , Yuichi Hamada , Shinichi Sato , Hiroshi Inomata
发明人： Yoshihiro Kubota , Meguru Kashida , Yoshihiko Nagata , Hitoshi Noguchi , Yuichi Hamada , Shinichi Sato , Hiroshi Inomata
IPC分类号： C09J183/14 , C08G77/48 , C08G77/50 , C08J5/12 , C08L83/02 , C08L83/04 , C08L83/05 , C08L83/14 , C09J183/00 , G03F1/62 , G03F7/075 , H01L21/027 , H01L21/30 , B32B9/60
CPC分类号： G03F1/64 , Y10T428/24793 , Y10T428/3154 , Y10T428/31663
摘要： An improvement is proposed in a frame-supported pellicle consisting of a frame member and a thin transparent polymer membrane adhesively bonded to the frame member used for dustproof covering of a photomask in a photolithograpic patterning work of electronic devices. The improvement comprises using a specific fluorocarbon group-containing organosiloxane-based polymeric composition as an adhesive for adhesively bonding the frame member and the polymer membrane. This adhesive is effective even when the polymeric membrane is formed from a fluorocarbon polymer which is hardly susceptible to adhesive bonding with conventional adhesives. In addition, the adhesive bonding by use of this specific adhesive is highly durable even under irradiation with ultraviolet light.
摘要翻译： 在由电子设备的光刻图案化工作中的框架构件和薄透明聚合物膜组成的框架支撑防护薄膜组合物中，提出了粘合到用于光掩模的防尘覆盖物的框架构件的薄透明聚合物膜的改进。 改进之处在于使用特定的含氟烃基的有机硅氧烷类聚合物组合物作为用于粘合框架构件和聚合物膜的粘合剂。 即使聚合物膜由氟碳聚合物形成，该粘合剂也是有效的，该氟碳聚合物几乎不易受与常规粘合剂粘合的影响。 此外，通过使用该特定粘合剂的粘合剂即使在用紫外线照射下也是非常耐用的。
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公开(公告)号：US5308567A
公开(公告)日：1994-05-03
申请号：US908452
申请日：1992-07-06
摘要： A method is proposed for the preparation of a resin membrane suitable for use, for example, as a covering pellicle of a photolithographic mask for patterning of semiconductor devices in the electronic industry. The method comprises the steps of: (a) coating a continuous-length substrate with a solution of the resin by using a roller coater to form a coating layer of the resin solution; (b) drying the coating layer by evaporating the solvent to form a dry resin film on the substrate surface; and (c) peeling the resin film from the surface of the substrate, preferably, in water.
摘要翻译： 提出了一种用于制备适用于电子工业中用于图案化半导体器件的光刻掩模的覆盖薄膜的树脂膜的方法。 该方法包括以下步骤：（a）使用辊式涂布机用树脂溶液涂布连续长度的基材以形成树脂溶液的涂层; （b）通过蒸发溶剂干燥涂层以在基材表面上形成干树脂膜; 和（c）优选在水中从树脂膜的表面剥离树脂膜。
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公开(公告)号：US5199055A
公开(公告)日：1993-03-30
申请号：US908330
申请日：1992-07-06
IPC分类号： G03F1/22 , G03F7/20 , G21K1/06 , H01L21/027
CPC分类号： G03F1/22 , G03F7/70866 , G21K1/06
摘要： Proposed is a high-precision X-ray lithographic mask blank with reinforcement free from warping or distortion. The mask blank is an integral body comprising: (a) a frame made from a silicon wafer; (b) a membrane of an X-ray permeable material such as silicon carbide adhering to and supported by one surface of the frame; and (c) a reinforcing member made from a single crystal of silicon adhesively bonded to the other surface of the frame with (d) a layer of silicon oxide intervening between the frame and the reinforcing member. The mask blank can be prepared in a process of first forming a layer of silicon oxide on the surface of the silicon wafer and/or reinforcing member prior to deposition of the X-ray permeable film on the silicon wafer and heating them together at a temperature of 800.degree. C. or lower while they are in direct contact with each other with the silicon oxide layer intervening therebetween.
摘要翻译： 提出了一种高精度的X光平版印刷掩模，无需翘曲或变形。 掩模坯料是一体的主体，其包括：（a）由硅晶片制成的框架; （b）附着在框架的一个表面并由其支撑的诸如碳化硅的X射线透过材料的膜; 和（c）由硅的单晶制成的加强构件，其与（d）介于框架和加强构件之间的氧化硅层粘合地结合到框架的另一个表面。 掩模坯料可以在将X射线透过膜沉积在硅晶片上之前首先在硅晶片和/或加强元件的表面上形成氧化硅层的过程中制备，并在温度 800℃以下，同时它们彼此直接接触，其间介于其间的氧化硅层。
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公开(公告)号：US5286567A
公开(公告)日：1994-02-15
申请号：US912792
申请日：1992-07-13
IPC分类号： C08F214/06 , B29C35/08 , B29C59/16 , C08F34/00 , C08F214/26 , C08F234/02 , G03F1/40 , G03F1/62 , H01L21/027 , B32B27/00
CPC分类号： G03F1/62 , B29C59/16 , B29C2035/0827 , B29C2035/0838 , Y10T428/31544
摘要： A pellicle for dust-proofing of a photolithographic mask used for patterning in the manufacturing process of semiconductor devices. The drawback due to dust deposition can be greatly decreased in the use of a pellicle made from a fluorocarbon resin which is a copolymer of tetrafluoroethylene and another fluorocarbon monomer capable of introducing a cyclic perfluoroether group into the molecule when the pellicle film is rendered antistatically hydrophilic, for example, by a plasma treatment.
摘要翻译： 用于在半导体器件的制造过程中用于图案化的光刻掩模的防尘薄膜组件。 在使用由氟树脂制成的防护薄膜树脂时，由于粉尘沉积的缺点可以大大降低，因为当防护薄膜成为抗静电亲水性时，能够将环状全氟醚基团引入到分子中的四氟乙烯与另一氟碳单体的共聚物， 例如通过等离子体处理。
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公开(公告)号：US5378514A
公开(公告)日：1995-01-03
申请号：US103925
申请日：1993-08-06
IPC分类号： G03F1/62 , H01L21/027 , B32B3/00
CPC分类号： G03F1/62 , G03F1/64 , Y10S156/922 , Y10T156/11 , Y10T428/3154 , Y10T428/31544
摘要： Proposed is a novel frame-supported pellicle for dust-proof protection of a photomask used in the photolithographic patterning work in the manufacture of semiconductor devices and the like. The frame-supported pellicle of the invention consists of a pellicle membrane made from a specific fluorocarbon-containing polymer which is adhesively bonded in a slack-free fashion to a surface of a rigid pellicle frame by means of a hot-melt adhesive which is a fluorocarbon-containing polymer of the same type as or similar to the fluorocarbon-containing polymer of the membrane so that no problems are involved in the adhesive bonding relative to the compatibility between the adhesive and the membrane which otherwise is poorly susceptible to adhesive bonding.
摘要翻译： 提出了一种用于半导体器件等的制造中的光刻图案工作中使用的光掩模的防尘保护用新颖的框架式防护薄膜。 本发明的框架式防护薄膜组件由一种由特定含氟烃聚合物制成的防护薄膜组件，该防护薄膜组件通过热熔粘合剂以一种无松弛的方式与刚性防护薄膜框架的表面粘合， 与含氟碳化物的聚合物相同或相似的含碳氟化合物的聚合物相对于粘合剂和膜之间的相容性而言，粘合剂粘合没有涉及问题，否则粘合剂与胶粘剂粘合性差。
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公开(公告)号：US5139633A
公开(公告)日：1992-08-18
申请号：US729450
申请日：1991-07-12
IPC分类号： C23C14/56 , C23C14/06 , C23C14/34 , H01J37/34 , H01L21/203 , H01L21/31 , H01L21/3205
CPC分类号： H01J37/347 , C23C14/34 , H01J37/34
摘要： In a process for the deposition of a film of an inorganic substance such as silicon carbide on the surface of a substrate such as a silicon wafer by the method of sputtering, as in the process for the preparation of a membrane to serve as an X-ray lithographic mask, using a target disc and a substrate disc held in parallel to each other, uniformity in the internal stress of the deposited film can be improved by displacing the target or the substrate relative to each other during the sputtering procedure in the direction parallel to the surface of the target or substrate in a distance of at least 1 mm.
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9.发明授权X-ray transmitting membrane for mask in x-ray lithography and method for preparing the same 失效X射线光刻用掩模用X射线透过膜及其制备方法
公开(公告)号：US5326649A
公开(公告)日：1994-07-05
申请号：US857838
申请日：1992-03-26
IPC分类号： G03F1/22 , H01L21/027 , B32B9/00 , G03F9/00
CPC分类号： G03F1/22 , Y10T428/161 , Y10T428/24488
摘要： Disclosed is an X-ray transmitting frame-supported membrane of silicon nitride suitable as a mask blank of an X-ray lithographic mask having outstandingly high resistance against irradiation with high-energy radiations and high transmission of light of a wavelength of 633 nm. These very desirable properties are obtained as a consequence of the extremely low content, i.e. 1.0 atomic % or less, of hydrogen in the silicon nitride, which can be achieved as a result of the specific preparation procedure by the CVD method in which the reactant gases are silane or disilane and ammonia in a specified mixing ratio to be reacted under a specified pressure and at a specified temperature.
摘要翻译： 本发明公开了一种适合作为X射线光刻掩模掩模板的氮化硅的X射线透射框架支撑膜，其具有对高能辐照和波长为633nm的高透光率的显着高的抗性。 作为氮化硅中极低含量（即1.0原子％或更少）的氢的结果，可获得这些非常理想的性质，其可以通过CVD方法的具体制备方法来实现，其中反应物气体 是指定混合比例的硅烷或乙硅烷和氨，以在规定的压力和规定的温度下反应。
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公开(公告)号：US5234609A
公开(公告)日：1993-08-10
申请号：US899330
申请日：1992-06-16
IPC分类号： C23C16/01 , C23C16/36 , G03F1/22 , H01L21/027
摘要： Disclosed is an X-ray-permeable membrane for X-ray lithographic mask for fine patterning in the manufacture of semiconductor devices having good transparency to visible light and exhibiting excellent resistance against high-energy beam irradiation. The membrane has a chemical composition expressed by the formula SiC.sub.x N.sub.y and can be prepared by the thermal CVD method in an atmosphere of a gaseous mixture consisting of gases comprising, as a group, the elements of silicon, carbon and nitrogen such as a ternary combination of silane, propane and ammonia.
摘要翻译： 公开了一种用于X射线光刻掩模的X射线透过膜，用于制造对可见光具有良好透明度并且显示出优异的高能束照射阻力的半导体器件的精细图案化。 膜具有由式SiC x N y表示的化学组成，并且可以在气体混合物气氛中通过热CVD法制备，所述气体混合物由以下组成的气体组成，所述气体包含硅，碳和氮的元素，例如三元组合 硅烷，丙烷和氨。
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