公开(公告)号：US07888760B2

公开(公告)日：2011-02-15

申请号：US12249438

申请日：2008-10-10

申请人： Hitoshi Sugiyama ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

发明人： Hitoshi Sugiyama ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

IPC分类号： H01L27/146 ,  H01L31/0216

CPC分类号： H01L27/14634 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14685 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014

摘要： A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

摘要翻译： 固态成像装置包括：具有形成在其第一主表面侧的成像装置部分的成像装置基板; 设置在成像器件基板的第二主表面侧并电连接到成像器件部分的背面互连电极，第二主表面在第一主表面的相对侧上; 电路基板，设置有与第二主表面相对的电路基板电极; 连接部，其将所述背面侧配线电极与所述电路基板电极电连接; 以及与背面配线电极共同设置的遮光层，或背面配线电极的电路基板侧。

公开(公告)号：US20090096051A1

公开(公告)日：2009-04-16

申请号：US12249438

申请日：2008-10-10

申请人： Hitoshi SUGIYAMA ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

发明人： Hitoshi SUGIYAMA ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L27/14634 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14685 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014

摘要： A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

摘要翻译： 固态成像装置包括：具有形成在其第一主表面侧的成像装置部分的成像装置基板; 设置在成像器件基板的第二主表面侧并电连接到成像器件部分的背面互连电极，第二主表面在第一主表面的相对侧上; 电路基板，设置有与第二主表面相对的电路基板电极; 连接部，其将所述背面侧配线电极与所述电路基板电极电连接; 以及与背面配线电极共同设置的遮光层，或背面配线电极的电路基板侧。

公开(公告)号：US08426977B2

公开(公告)日：2013-04-23

申请号：US12539037

申请日：2009-08-11

申请人： Kazumasa Tanida ,  Hideko Mukaida ,  Susumu Harada ,  Chiaki Takubo

发明人： Kazumasa Tanida ,  Hideko Mukaida ,  Susumu Harada ,  Chiaki Takubo

IPC分类号： H01L23/48

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/13 ,  H01L27/14683 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor apparatus includes, a semiconductor substrate having first and second main surfaces and a through hole connecting the first and second main surfaces; a first insulation layer arranged on the first main surface, and having an opening corresponding to the through hole; a first conductive layer arranged on the first insulation layer, and covering the through hole; a second insulation layer arranged on an inner wall of the through hole and the second surface; a second conductive layer arranged in the through hole and on the second insulation layer, the second conductive layer contacting the first conductive layer; and a filling member arranged on the second conductive layer in the through hole, and having a gap between the second conductive layer on the first main surface side.

摘要翻译： 半导体装置包括具有第一和第二主表面的半导体衬底和连接第一和第二主表面的通孔; 布置在所述第一主表面上并具有与所述通孔对应的开口的第一绝缘层; 布置在所述第一绝缘层上并覆盖所述通孔的第一导电层; 布置在所述通孔的内壁和所述第二表面上的第二绝缘层; 布置在所述通孔中和所述第二绝缘层上的第二导电层，所述第二导电层与所述第一导电层接触; 以及填充构件，其布置在所述通孔中的所述第二导电层上，并且在所述第一主表面侧上的所述第二导电层之间具有间隙。

公开(公告)号：US20100038741A1

公开(公告)日：2010-02-18

申请号：US12539037

申请日：2009-08-11

申请人： Kazumasa Tanida ,  Hideko Mukaida ,  Susumu Harada ,  Chiaki Takubo

发明人： Kazumasa Tanida ,  Hideko Mukaida ,  Susumu Harada ,  Chiaki Takubo

IPC分类号： H01L31/02 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/13 ,  H01L27/14683 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor apparatus includes, a semiconductor substrate having first and second main surfaces and a thought hole connecting the first and second main surfaces; a first insulation layer arranged on the first main surface, and having an opening corresponding to the thought hole; a first conductive layer arranged on the first insulation layer, and covering the thought hole; a second insulation layer arranged on an inner wall of the thought hole and the second surface; a second conductive layer arranged in the thought hole and on the second insulation layer, the second conductive layer contacting the first conductive layer; and a filling member arranged on the second conductive layer in the through hole, and having a gap between the second conductive layer on the first main surface side.

摘要翻译： 半导体装置包括具有第一和第二主表面的半导体衬底和连接第一和第二主表面的思想孔; 布置在所述第一主表面上的第一绝缘层，并且具有与所述思想孔对应的开口; 布置在所述第一绝缘层上并覆盖所述思想孔的第一导电层; 布置在思想孔和第二表面的内壁上的第二绝缘层; 布置在思想孔和第二绝缘层上的第二导电层，第二导电层与第一导电层接触; 以及填充构件，其布置在所述通孔中的所述第二导电层上，并且在所述第一主表面侧上的所述第二导电层之间具有间隙。

公开(公告)号：US08063462B2

公开(公告)日：2011-11-22

申请号：US12212754

申请日：2008-09-18

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

IPC分类号： H01L31/02

CPC分类号： H01L27/14618 ,  H01L2224/02372 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/16235 ,  H01L2224/05099

摘要： A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.

摘要翻译： 半导体器件包括具有其中设置有光接收部分和电极的第一表面的半导体衬底。 半导体衬底具有连接第一表面和第二表面的穿透布线层。 透光性保护构件设置在半导体衬底上以覆盖第一表面。 在半导体衬底和透光保护构件之间设置间隙。 在透光保护部件的表面形成有保护膜。 保护膜具有设置在与受光部对应的区域的开口部。

公开(公告)号：US20090079020A1

公开(公告)日：2009-03-26

申请号：US12212754

申请日：2008-09-18

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14618 ,  H01L2224/02372 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/16235 ,  H01L2224/05099

摘要： A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.

摘要翻译： 半导体器件包括具有其中设置有光接收部分和电极的第一表面的半导体衬底。 半导体衬底具有连接第一表面和第二表面的穿透布线层。 透光性保护构件设置在半导体衬底上以覆盖第一表面。 在半导体衬底和透光保护构件之间设置间隙。 在透光保护部件的表面形成有保护膜。 保护膜具有设置在与受光部对应的区域的开口部。

公开(公告)号：US20110241180A1

公开(公告)日：2011-10-06

申请号：US13164099

申请日：2011-06-20

申请人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

发明人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

IPC分类号： H01L23/48 ,  H01L21/66

CPC分类号： H01L27/14687 ,  H01L21/561 ,  H01L21/568 ,  H01L23/481 ,  H01L23/544 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2223/54493 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

摘要翻译： 一种制造半导体器件的方法，包括：制备具有第一凹槽的半导体衬底; 制备具有第二凹口的支撑衬底; 将半导体衬底与支撑衬底层压，使得第一凹口可以与第二凹口匹配; 以及处理半导体衬底的与面向支撑衬底的第一主表面相对的第二主表面，以将半导体衬底的厚度减小到预定厚度。

公开(公告)号：US07993974B2

公开(公告)日：2011-08-09

申请号：US12236567

申请日：2008-09-24

申请人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

发明人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

IPC分类号： H01L21/30

CPC分类号： H01L27/14687 ,  H01L21/561 ,  H01L21/568 ,  H01L23/481 ,  H01L23/544 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2223/54493 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

摘要翻译： 一种制造半导体器件的方法，包括：制备具有第一凹槽的半导体衬底; 制备具有第二凹口的支撑衬底; 将半导体衬底与支撑衬底层压，使得第一凹口可以与第二凹口匹配; 以及处理半导体衬底的与面向支撑衬底的第一主表面相对的第二主表面，以将半导体衬底的厚度减小到预定厚度。

公开(公告)号：US20090194865A1

公开(公告)日：2009-08-06

申请号：US12236567

申请日：2008-09-24

申请人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

发明人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

IPC分类号： H01L23/48 ,  H01L21/78 ,  H01L21/66

CPC分类号： H01L27/14687 ,  H01L21/561 ,  H01L21/568 ,  H01L23/481 ,  H01L23/544 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2223/54493 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

摘要翻译： 一种制造半导体器件的方法，包括：制备具有第一凹槽的半导体衬底; 制备具有第二凹口的支撑衬底; 将半导体衬底与支撑衬底层压，使得第一凹口可以与第二凹口匹配; 以及处理半导体衬底的与面向支撑衬底的第一主表面相对的第二主表面，以将半导体衬底的厚度减小到预定厚度。

公开(公告)号：US08338918B2

公开(公告)日：2012-12-25

申请号：US13164099

申请日：2011-06-20

申请人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

发明人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

IPC分类号： H01L23/48 ,  H01L21/66

CPC分类号： H01L27/14687 ,  H01L21/561 ,  H01L21/568 ,  H01L23/481 ,  H01L23/544 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2223/54493 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

摘要翻译： 一种制造半导体器件的方法，包括：制备具有第一凹槽的半导体衬底; 制备具有第二凹口的支撑衬底; 将半导体衬底与支撑衬底层压，使得第一凹口可以与第二凹口匹配; 以及处理半导体衬底的与面向支撑衬底的第一主表面相对的第二主表面，以将半导体衬底的厚度减小到预定厚度。