公开(公告)号：US07456445B2

公开(公告)日：2008-11-25

申请号：US11597384

申请日：2005-05-20

申请人： Hitoshi Takeda ,  Syunji Horikawa

发明人： Hitoshi Takeda ,  Syunji Horikawa

IPC分类号： H01L29/20

CPC分类号： H01L33/325 ,  H01L33/305 ,  H01L33/32

摘要： A Group III nitride semiconductor light emitting device having a light emitting layer (6) bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized by comprising an n-type Group III nitride semiconductor layer (4) having germanium (Ge) added thereto and having a resistivity of 1×10−1 to 1×10−3 Ωcm. The invention provides a Ge-doped n-type Group III nitride semiconductor layer with low resistance and excellent flatness, in order to obtain a Group III nitride semiconductor light emitting device exhibiting low forward voltage and excellent light emitting efficiency.

摘要翻译： 一种III族氮化物半导体发光器件，其具有与由n型或p型III族氮化物半导体组成的晶体层结合的发光层（6），所述III族氮化物半导体发光器件的特征在于包括n 型（III）氮化物半导体层（4），其具有锗（Ge）并且具有1×10 -1至1×10 -3Ω电阻率的电阻率。 本发明提供了具有低电阻和优异的平坦度的Ge掺杂的n型III族氮化物半导体层，以便获得表现出低正向电压和优异的发光效率的III族氮化物半导体发光器件。

公开(公告)号：US20070228407A1

公开(公告)日：2007-10-04

申请号：US11597384

申请日：2005-05-20

申请人： Hitoshi Takeda ,  Syunji Horikawa

发明人： Hitoshi Takeda ,  Syunji Horikawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/325 ,  H01L33/305 ,  H01L33/32

摘要： A Group III nitride semiconductor light emitting device having a light emitting layer (6) bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized by comprising an n-type Group III nitride semiconductor layer (4) having germanium (Ge) added thereto and having a resistivity of 1×10−1 to 1×10−3 Ωcm. The invention provides a Ge-doped n-type Group III nitride semiconductor layer with low resistance and excellent flatness, in order to obtain a Group III nitride semiconductor light emitting device exhibiting low forward voltage and excellent light emitting efficiency.

摘要翻译： 一种III族氮化物半导体发光器件，其具有与由n型或p型III族氮化物半导体组成的晶体层结合的发光层（6），所述III族氮化物半导体发光器件的特征在于包括n 型（III）氮化物半导体层（4），其具有锗（Ge）并且具有1×10 -1至1×10 -3Ω电阻率的电阻率。 本发明提供了具有低电阻和优异的平坦度的Ge掺杂的n型III族氮化物半导体层，以便获得表现出低正向电压和优异的发光效率的III族氮化物半导体发光器件。

公开(公告)号：US20080230800A1

公开(公告)日：2008-09-25

申请号：US10585744

申请日：2005-04-27

申请人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

发明人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

IPC分类号： H01L33/00 ,  H01L29/22 ,  H01L21/205

CPC分类号： H01L33/025 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

摘要翻译： 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。

公开(公告)号：US07855386B2

公开(公告)日：2010-12-21

申请号：US10585744

申请日：2005-04-27

申请人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

发明人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/025 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits.The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

摘要翻译： 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。