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    POWER CONTROL METHOD AND APPARATUS FOR ARRAY PROCESSOR
    2.
    发明申请
    POWER CONTROL METHOD AND APPARATUS FOR ARRAY PROCESSOR 审中-公开
    功率控制方法和设备的阵列处理器

    公开(公告)号：US20130173935A1

    公开(公告)日：2013-07-04

    申请号：US13606384

    申请日：2012-09-07

    申请人： Ho Yang ,  Kyeong Yeon Kim ,  Young Hwan Park ,  Ki Taek Bae

    发明人： Ho Yang ,  Kyeong Yeon Kim ,  Young Hwan Park ,  Ki Taek Bae

    IPC分类号： G06F1/26

    CPC分类号： G06F1/3243 ,  G06F8/4432 ,  Y02D10/152 ,  Y02D10/41

    摘要： Provided is an apparatus and method for controlling power to a reconfigurable array processor. The method may determine one or more function units (FUs) as activation function units (FUs) and deactivation FUs among a plurality of FUs included in the reconfigurable array processor. The processor may interrupt power supplied to the deactivation FUs.

    摘要翻译： 提供了一种用于控制可重配置阵列处理器的功率的装置和方法。 该方法可以将包括在可重构阵列处理器中的多个FU中的一个或多个功能单元（FU）确定为激活功能单元（FU）和去激活FU。 处理器可以中断提供给停用FU的电源。

    Controlling method of dishwasher
    5.
    发明授权
    Controlling method of dishwasher 有权
    洗碗机的控制方法

    公开(公告)号：US09060668B2

    公开(公告)日：2015-06-23

    申请号：US12461683

    申请日：2009-08-20

    申请人： Seong Ho Kim ,  Yong Jin Choi ,  Young Hwan Park

    发明人： Seong Ho Kim ,  Yong Jin Choi ,  Young Hwan Park

    IPC分类号： A47L15/46 ,  B08B9/20 ,  A47L15/42 ,  A47L15/00

    CPC分类号： A47L15/4287 ,  A47L15/0005 ,  A47L15/0007 ,  A47L15/0015 ,  A47L15/0049 ,  A47L15/4234 ,  A47L2401/12 ,  A47L2501/06 ,  A47L2601/04

    摘要： Dishwashers and methods of control for operation of dishwashers are disclosed. The dishwasher may include an upper rack in an upper portion of a washing compartment for placing dishes, such as wine glasses, which are susceptible to damage. The dishwasher may also include an upper spraying arm in the upper portion of the washing compartment. During a wash cycle, the upper spraying arm can spray washing water toward the upper rack and steam may be supplied to the washing compartment at various intervals to reduce the risk of damage to the dishes and improve foreign matter removal. During a rinse cycle, water which may be heated in multiple stages by a sump heater may be sprayed toward the upper rack.

    摘要翻译： 公开了用于洗碗机操作的洗碗机和控制方法。 洗碗机可以包括在洗涤室的上部的上部机架，用于放置易于损坏的餐具（例如酒杯）。 洗碗机还可以包括位于洗涤室上部的上部喷洒臂。 在洗涤循环期间，上部喷洒臂可以向上部支架喷射洗涤水，并且可以以各种间隔将蒸汽供应到洗涤室，以减少损坏餐具的风险并改善异物去除。 在漂洗循环期间，可以通过贮槽加热器多级加热的水可以朝向上部支架喷射。

    Drum type washing machine
    6.
    再颁专利
    Drum type washing machine 有权
    鼓式洗衣机

    公开(公告)号：USRE44795E1

    公开(公告)日：2014-03-11

    申请号：US13116096

    申请日：2011-05-26

    申请人： Na Eun Kim ,  Jin Woong Kim ,  Young Hwan Park ,  Jae Won Chang

    发明人： Na Eun Kim ,  Jin Woong Kim ,  Young Hwan Park ,  Jae Won Chang

    IPC分类号： D06F37/22

    CPC分类号： D06F37/22

    摘要： A drum type washing machine is provided, in which vibration is efficiently attenuated, by a maximum capacity within a size-fixed cabinet is provided, and by which a user does not bend over or sit down to load laundry into the washing machine. The drum type washing machine includes a cabinet forming an exterior of the drum type washing machine, a tub fixed within the cabinet, the tub having a laundry loading entrance at an outer circumference of the tub, a drum rotatably provided within the tub, the drum having an opening on a lateral side of the drum to communicate with the laundry loading entrance of the tub, a motor assembly provided next to one side of the drum to rotate the drum, and a suspension assembly provided to support a weight of the drum and attenuate vibration of the drum.

    摘要翻译： 提供了一种滚筒式洗衣机，其中振动被有效地衰减，提供了在尺寸固定的机柜内的最大容量，并且用户不会弯曲或坐下来将衣物装载到洗衣机中。 滚筒式洗衣机包括形成滚筒式洗衣机外部的机柜，固定在机柜内的桶，在桶的外周具有衣物装载入口的桶，可旋转地设置在桶内的滚筒，滚筒 在滚筒的横向侧上具有与桶的衣物装载入口连通的开口，设置在滚筒的一侧旁边以使滚筒旋转的马达组件和设置成支撑滚筒重量的悬挂组件， 衰减鼓的振动。

    2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same
    7.
    发明授权
    2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same 有权
    2DEG肖特基二极管以氮化物形成复合肖特基/欧姆电极结构及其制造方法

    公开(公告)号：US08373245B2

    公开(公告)日：2013-02-12

    申请号：US12654940

    申请日：2010-01-08

    申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

    发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

    IPC分类号： H01L29/47

    CPC分类号： H01L29/66007 ,  H01L21/02521 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/872

    摘要： Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic electrode lines on the semiconductor layer and includes Schottky electrode lines disposed in the first direction, wherein the Schottky electrode lines and the ohmic electrode lines are alternately disposed in parallel, and the ohmic electrode part further includes first ohmic electrodes covered by the Schottky electrode lines on the semiconductor layer.

    摘要翻译： 公开了一种半导体器件，包括：基底; 设置在所述基底基板上的半导体层; 在所述半导体层上具有沿第一方向设置的欧姆电极线的欧姆电极部; 以及肖特基电极部，其设置为与半导体层上的欧姆电极线间隔开，并且包括沿第一方向设置的肖特基电极线，其中肖特基电极线和欧姆电极线交替地平行设置，并且 欧姆电极部分还包括由半导体层上的肖特基电极线覆盖的第一欧姆电极。

    Nitride based semiconductor device and method for manufacturing of the same
    8.
    发明授权
    Nitride based semiconductor device and method for manufacturing of the same 有权
    氮化物基半导体器件及其制造方法

    公开(公告)号：US08373200B2

    公开(公告)日：2013-02-12

    申请号：US12842303

    申请日：2010-07-23

    申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

    发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

    IPC分类号： H01L29/739

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

    摘要： Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer.

    摘要翻译： 本文公开了一种氮化物基半导体器件。 氮化物基半导体器件包括：基底; 外延生长层，其设置在所述基底基板上，并且由于与所述基底基板的晶格差异而产生缺陷; 在填充缺陷的同时覆盖外延生长层的漏电流屏障; 以及设置在外延生长层上的电极部分。

    Nitride semiconductor device and manufacturing method thereof
    9.
    发明申请
    Nitride semiconductor device and manufacturing method thereof 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US20120267686A1

    公开(公告)日：2012-10-25

    申请号：US13137291

    申请日：2011-08-03

    申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

    发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park

    IPC分类号： H01L29/778 ,  H01L21/338

    CPC分类号： H01L29/66431 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

    摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

    摘要翻译： 提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 源极与漏极间隔开，与氮化物半导体层肖特基接触，并且具有与内部的氮化物半导体层欧姆接触的欧姆图案; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法 。

    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    氮化物半导体器件及其制造方法

    公开(公告)号：US20120267639A1

    公开(公告)日：2012-10-25

    申请号：US13448678

    申请日：2012-04-17

    申请人： Woo Chul JEON ,  Ki Yeol Park ,  Young Hwan Park

    发明人： Woo Chul JEON ,  Ki Yeol Park ,  Young Hwan Park

    IPC分类号： H01L29/778 ,  H01L21/336 ,  H01L29/205

    CPC分类号： H01L29/402 ,  H01L29/0607 ,  H01L29/2003 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787

    摘要： Disclosed herein are a nitride semiconductor device and a method for manufacturing the same. According to an exemplary embodiment, there is provided a nitride semiconductor device, including: a nitride semiconductor layer having a 2DEG channel; a drain electrode ohmic-contacted with the nitride semiconductor layer; a source electrode Schottky-contacted with the nitride semiconductor layer, including a plurality of patterned protrusion portions protruded to the drain electrode direction, and including an ohmic pattern ohmic-contacted with the nitride semiconductor layer therein; a dielectric layer disposed on the nitride semiconductor layer between the drain electrode and the source electrode and over at least a portion of the source electrode including the patterned protrusion portions; and a gate electrode disposed on the dielectric, wherein a portion of the gate electrode is disposed on the dielectric layer over the patterned protrusion portions and a drain direction edge portion of the source electrode.

    摘要翻译： 本文公开了一种氮化物半导体器件及其制造方法。 根据示例性实施例，提供了一种氮化物半导体器件，包括：具有2DEG通道的氮化物半导体层; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，包括突出到漏电极方向的多个图案化突起部分，并且包括与其中的氮化物半导体层欧姆接触的欧姆图案; 设置在所述氮化物半导体层之间的介电层，位于所述漏电极和所述源电极之间，以及至少部分所述源极包括所述图案化突起部分; 以及设置在所述电介质上的栅电极，其中所述栅电极的一部分设置在所述图案化的突出部分上的所述电介质层和所述源电极的漏极方向边缘部分上。