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    Method for forming sputter target assemblies
    3.
    发明授权
    Method for forming sputter target assemblies 有权
    用于形成溅射靶组件的方法

    公开(公告)号：US08123107B2

    公开(公告)日：2012-02-28

    申请号：US10852117

    申请日：2004-05-25

    申请人： Holger J. Koenigsmann ,  Andrew C. Perry ,  Thomas J. Hunt ,  Paul S. Gilman

    发明人： Holger J. Koenigsmann ,  Andrew C. Perry ,  Thomas J. Hunt ,  Paul S. Gilman

    IPC分类号： B23K20/00

    CPC分类号： B23K35/02

    摘要： The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate.

    摘要翻译： 该方法通过将溅射靶附接到插入件并且在插入件和背板之间施加粘合金属层来形成溅射靶组件。 然后将插入物和背板压在一起形成与粘合金属层的固态结合，将插入件附接到背板上，并在插入件和背板之间形成至少一个冷却通道。

    Recessed sputter target
    4.
    发明授权
    Recessed sputter target 有权

    公开(公告)号：US06599405B2

    公开(公告)日：2003-07-29

    申请号：US09870164

    申请日：2001-05-30

    申请人： Thomas J. Hunt ,  Holger J. Koenigsmann ,  Paul S. Gilman

    发明人： Thomas J. Hunt ,  Holger J. Koenigsmann ,  Paul S. Gilman

    IPC分类号： C23C1432

    CPC分类号： H01J37/3491 ,  C23C14/3407

    摘要： The method manufactures sputter target assemblies. It first includes the step of manufacturing a target insert. The target insert has a yield strength, a diameter, a height, a planar top surface and a conical-shaped rear surface. Then a backing plate is manufactured. The backing plate has a cylindrical recess that corresponds to the diameter of the target insert. The cylindrical recess has a depth less than the height of the target insert and a yield strength less than the yield strength of the target insert. Finally, pressing the target insert into the cylindrical recess of the backing plate bonds the target insert to the backing plate to form a target assembly. The pressed target assembly contains the target insert with the conical-shaped rear surface.

    Textured-grain-powder metallurgy tantalum sputter target
    6.
    发明授权
    Textured-grain-powder metallurgy tantalum sputter target 有权
    纹理粉末冶金钽溅射靶

    公开(公告)号：US07081148B2

    公开(公告)日：2006-07-25

    申请号：US10809885

    申请日：2004-03-26

    申请人： Holger J. Koenigsmann ,  Paul S. Gilman

    发明人： Holger J. Koenigsmann ,  Paul S. Gilman

    IPC分类号： C22C27/02 ,  C23C14/14 ,  C23C14/34

    CPC分类号： C23C14/3414 ,  B22F2003/248 ,  B22F2998/10 ,  C22C1/045 ,  C22C27/02 ,  B22F3/02 ,  B22F3/10 ,  B22F3/18 ,  B22F3/24

    摘要： The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity, the tantalum body being free of (200)–(222) direction banding detectable by Electron Back-Scattering Diffraction and wherein the sputter target has a purity of at least 99.99 (%) percent.

    摘要翻译： 溅射靶包括具有由固结钽粉末和溅射面形成的钽晶粒的钽体。 溅射面具有用于将钽原子远离溅射面传送以用于涂覆基底的原子输送方向。 钽晶粒在远离溅射面的原子传输方向上具有至少40％（222）方向取向比和小于15％（110）方向取向比，以增加溅射均匀性，钽体不含（200 ） - （222）方向条带可通过电子反向散射衍射检测，并且其中溅射靶具有至少99.99（％）的纯度。

    Textured-grain-powder metallurgy tantalum sputter target
    7.
    发明授权
    Textured-grain-powder metallurgy tantalum sputter target 有权
    纹理粉末冶金钽溅射靶

    公开(公告)号：US06770154B2

    公开(公告)日：2004-08-03

    申请号：US09955348

    申请日：2001-09-18

    申请人： Holger J. Koenigsmann ,  Paul S. Gilman

    发明人： Holger J. Koenigsmann ,  Paul S. Gilman

    IPC分类号： C22C2702

    CPC分类号： C23C14/3414 ,  B22F3/02 ,  B22F2003/248 ,  B22F2998/10 ,  C22C27/02 ,  B22F3/18

    摘要： The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity.

    摘要翻译： 溅射靶包括具有由固结钽粉末和溅射面形成的钽晶粒的钽体。 溅射面具有用于将钽原子远离溅射面传送以用于涂覆基底的原子输送方向。 钽晶粒在远离溅射面的原子传输方向上具有至少40％（222）的方向取向比和小于15％（110）的方向取向比，以增加溅射均匀性。

    Nickel-titanium sputter target alloy
    8.
    发明授权
    Nickel-titanium sputter target alloy 有权
    镍钛溅射靶合金

    公开(公告)号：US06478895B1

    公开(公告)日：2002-11-12

    申请号：US09841625

    申请日：2001-04-25

    申请人： Holger J. Koenigsmann ,  Paul S. Gilman ,  Thomas J. Hunt

    发明人： Holger J. Koenigsmann ,  Paul S. Gilman ,  Thomas J. Hunt

    IPC分类号： C22C1903

    CPC分类号： C23C14/3414 ,  C22C19/03

    摘要： The sputter target deposits nickel from a binary alloy. The binary alloy contains, by weight percent, 9 to 15 titanium and the balance nickel and incidental impurities. The binary alloy has, by weight percent, 35 to 50 TiNi3 needle-like intermetallic phase and balance &agr;-nickel phase. The TiNi3 needle-like intermetallic phase and &agr;-nickel phase are formed from a eutectic decomposition. The &agr;-nickel phase has a grain size between 50 and 180 &mgr;m. The binary alloy has a Curie temperature of less than or equal to a temperature of 25° C. and exhibits paramagnetic properties at temperatures of 25° C. or lower.

    摘要翻译： 溅射靶从二元合金中沉积镍。 二元合金含有重量百分比为9-15钛，余量为镍和附带杂质。 该二元合金以重量百分比计含有35至50个TiNi 3针状金属间相和平衡α-镍相。 TiNi3针状金属间相和α-Ni相由共晶分解形成。 α-镍相的粒径为50-180μm。 二元合金的居里温度小于或等于25℃，在25℃或更低的温度下具有顺磁性能。