摘要:
A system and method (10) for heating objects (O) during a thermal treatment process in a production line (P) is described. The system (10) comprises a transport system (11), a minor arrangement (201, 202, 203, 204, 205, 206) comprising a first mirror surface (21, 21′, 21″) and a second minor surface (22, 22′, 22″) arranged at opposite sides, so that the objects (O) may be transported between the minor surfaces (21, 22, 21′, 22′, 21″, 22″) along the production line and a radiation device (30) comprising a number of lasers for generating light (L). The radiation device (30) and the mirror arrangement (201, 202, 203, 204, 205, 206) are constructed such that the main direction (R) of light (L) that enters the mirror arrangement (201, 202, 203, 204, 205, 206) is directed towards the first mirror surface (21, 21′, 21″) at an angle to the production line (P), and the light (L) subsequently undergoes multiple reflections between the mirror surfaces (21, 22, 21′, 22′, 21″, 22″) so that a series of multiple reflections of the light (L) travels in the transport direction (OT) along at least a section of the minor surface (21, 22, 21′, 22′, 21″, 22″) or travels against the transport direction (OT) along at least a section of the minor surface (21, 22, 21′, 22′, 21″, 22″) and heats the objects (O) being transported between the minor surfaces (21, 22, 21′, 22′, 21″, 22″).
摘要:
A system and method (10) for heating objects (O) during a thermal treatment process in a production line (P) is described. The system (10) comprises a transport system (11), a minor arrangement (201, 202, 203, 204, 205, 206) comprising a first mirror surface (21, 21′, 21″) and a second minor surface (22, 22′, 22″) arranged at opposite sides, so that the objects (O) may be transported between the minor surfaces (21, 22, 21′, 22′, 21″, 22″) along the production line and a radiation device (30) comprising a number of lasers for generating light (L). The radiation device (30) and the mirror arrangement (201, 202, 203, 204, 205, 206) are constructed such that the main direction (R) of light (L) that enters the mirror arrangement (201, 202, 203, 204, 205, 206) is directed towards the first mirror surface (21, 21′, 21″) at an angle to the production line (P), and the light (L) subsequently undergoes multiple reflections between the mirror surfaces (21, 22, 21′, 22′, 21″, 22″) so that a series of multiple reflections of the light (L) travels in the transport direction (OT) along at least a section of the minor surface (21, 22, 21′, 22′, 21″, 22″) or travels against the transport direction (OT) along at least a section of the minor surface (21, 22, 21′, 22′, 21″, 22″) and heats the objects (O) being transported between the minor surfaces (21, 22, 21′, 22′, 21″, 22″).
摘要:
The present invention relates to a switchable dual wavelength solid state laser with a solid state gain medium (1) which is selected to emit optical radiation at a first wavelength with a first polarization and of at least a second wavelength with a second polarization different from said first polarization when optically or electrically pumped. A polarizing device (7) is arranged within the laser cavity, said polarizing device (7) being adjustable at least between said first and said second polarization. The two end mirrors (2, 3) of the laser cavity are designed to allow lasing of the solid state laser at the first wavelength when the polarizing device (7) is adjusted to the first polarization, and to allow lasing of the solid state laser at the second wavelength when the polarizing device (7) is adjusted to the second polarization. The proposed solid state laser allows an easy switching between two emission wavelengths.
摘要:
The present invention relates to a switchable dual wavelength solid state laser with a solid state gain medium (1) which is selected to emit optical radiation at a first wavelength with a first polarization and of at least a second wavelength with a second polarization different from said first polarization when optically or electrically pumped. A polarizing device (7) is arranged within the laser cavity, said polarizing device (7) being adjustable at least between said first and said second polarization. The two end mirrors (2, 3) of the laser cavity are designed to allow lasing of the solid state laser at the first wavelength when the polarizing device (7) is adjusted to the first polarization, and to allow lasing of the solid state laser at the second wavelength when the polarizing device (7) is adjusted to the second polarization. The proposed solid state laser allows an easy switching between two emission wavelengths.
摘要:
A system is described which enables parameters of a tire (20) to be measured by means of self-mixing laser interferometry. Laser sensors (1) using self-mixing laser interferometry can measure distances and/or speed of surface elements of a tire (20). Consequently, a system comprising such a laser sensor (1) can for example be used to measure and indicate tire tread wear, tire load or speed. In comparison with laser sensor based systems using the well-known time of flight method, the described system is simple, cost effective and, due to the small size of the laser sensor (1), can easily be integrated in cars.
摘要:
An optical sensor (600) for detecting the movement of an object relative to the position of the optical sensor (600), using self-mixing interference, is described. The optical sensor (600) comprises a laser (100), a detector (200) and a filter device (500). The filter device (500) suppresses measurement signals generated by means of the detector (200) when movements of the object at a velocity below a defined threshold value cause the measurement signals. The optical sensor (600) may be used in a switch in order to enable selective switching depending on the velocity of the movement of the object.
摘要:
The present invention relates to an all-solid state UV laser system comprising at least one semiconductor laser (10) in a VECSEL configuration. The gain structure (3) in this semiconductor laser (10) emits fundamental radiation in a wavelength range which can be frequency doubled to wavelengths in the UV region. The frequency doubling is achieved with a nonlinear optical crystal (6) for second harmonic generation arranged inside the extended cavity of the semiconductor laser (10). By electrically pumping of the semiconductor laser wavelengths below 200 nm can be efficiently generated with already known semiconductor materials like GaN. The proposed UV laser system is compact and can be fabricated and operated at low costs compared to UV excimer lasers.
摘要:
The invention describes a heating system (13) for heating a body (1) of a preform having a material thickness bounded by a first surface (2) and a second surface (4). The heating system (13) comprises at least a light source arrangement (12) which is arranged to emit a number of directed light beams (17) and a coupling arrangement (15, 21) realized to deliberately couple light from the light source arrangement (12) in a specific direction into the body (1) during at least a certain minimum period such that the light is essentially guided along a longer path (19) between the first (2) and second surface (4). Furthermore, the invention concerns a method of heating a body (1) of a preform.
摘要:
The invention describes a heating system (13) for heating a body (1) of a preform having a material thickness bounded by a first surface (2) and a second surface (4). The heating system (13) comprises at least a light source arrangement (12) which is arranged to emit a number of directed light beams (17) and a coupling arrangement (15, 21) realized to deliberately couple light from the light source arrangement (12) in a specific direction into the body (1) during at least a certain minimum period such that the light is essentially guided along a longer path (19) between the first (2) and second surface (4). Furthermore, the invention concerns a method of heating a body (1) of a preform.
摘要:
The present invention provides an intracavity frequency-converted solid state laser for the visible wavelength region. The laser comprises a semiconductor laser (1) with an extended laser cavity (2). A second laser cavity (4) is formed inside of said extended laser cavity (2). The second laser cavity (4) comprises a gain medium (3) absorbing radiation of the semiconductor laser (1) and emitting radiation at a higher wavelength in the visible wavelength region. The frequency converting gain medium (3) is formed of a rare-earth doped solid state host material. The proposed laser can be manufactured in a highly integrated manner for generating radiation in the visible wavelength region, for example in the green, red or blue wavelength region.