公开(公告)号：US07270762B2

公开(公告)日：2007-09-18

申请号：US10393071

申请日：2003-03-20

申请人： Hongyu Wang ,  Terence M. Thomas ,  Qianqiu Ye ,  Heinz F. Reinhardt ,  Vikas Sachan

发明人： Hongyu Wang ,  Terence M. Thomas ,  Qianqiu Ye ,  Heinz F. Reinhardt ,  Vikas Sachan

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/06

摘要： The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

摘要翻译： 本发明的抛光组合物可用于化学机械抛光含有贵金属如铂的底物，并包含至多约50重量％的佐剂，其中所述佐剂选自金属 - 阴离子化合物， 金属阳离子化合物或其混合物; 磨料颗粒为抛光组合物重量的约0.5％至约55％; 和高达约10重量％的抛光组合物的水溶性有机添加剂。 磨料颗粒选自氧化铝，二氧化铈，二氧化硅，金刚石，氧化锗，氧化锆，碳化硅，氮化硼，碳化硼或其混合物。 有机添加剂通常改善磨料颗粒的分散性，并通过稳定抛光组合物的pH并抑制介电去除速率来提高金属去除速率和金属去除选择性。

公开(公告)号：US20080276543A1

公开(公告)日：2008-11-13

申请号：US11801151

申请日：2007-05-08

申请人： Terence M. Thomas ,  Qianqiu Ye

发明人： Terence M. Thomas ,  Qianqiu Ye

IPC分类号： C09K3/14

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

摘要： The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having a tantalum-containing barrier layer and copper interconnects. The slurry includes by weight percent, 0 to 5 oxidizing agent, 0.1 to 25 silica particles, 0.001 to 3 polyvinyl pyrrolidone, 0.02 to 5 weight percent imine barrier removal agent selected from at least one of formamidine, formamidine salts, formamidine derivatives, guanidine, guanidine derivatives, guanidine salts and a mixture thereof, 0.02 to 5 weight percent carbonate, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 10 complexing agent and balance water; and the aqueous slurry having a pH of 9 to 11.

摘要翻译： 含水浆液可用于化学机械抛光具有含钽阻挡层和铜互连的半导体衬底。 该浆料包括按重量百分比计，0-5份氧化剂，0.1-25二氧化硅颗粒，0.001至3聚乙烯吡咯烷酮，0.02-5％（重量）亚胺屏障去除剂，其选自甲脒，甲脒盐，甲脒衍生物，胍， 胍衍生物，胍盐及其混合物，0.02-5重量％碳酸盐，0.01至10个抑制剂，用于减少铜互连的静态蚀刻，0.001至10个络合剂和余量的水; 该水性浆液的pH为9〜11。

公开(公告)号：US07785487B2

公开(公告)日：2010-08-31

申请号：US11504508

申请日：2006-08-15

申请人： Terence M. Thomas ,  Qianqiu Ye

发明人： Terence M. Thomas ,  Qianqiu Ye

IPC分类号： C09K13/00

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water; and the aqueous slurry has a pH of at least 8.

摘要翻译： 含水浆液可用于具有铜互连的化学机械抛光半导体衬底。 含水浆料包括重量百分数，0.01至25种氧化剂，0.1至50种磨料颗粒，0.001至3种聚乙烯吡咯烷酮，0.01至10种用于减少铜互连静电蚀刻的抑制剂，0.001至5种含磷化合物，用于提高去除率 的铜互连，在抛光过程中形成0.001至10个络合剂并平衡水; 并且所述含水浆料的pH至少为8。

公开(公告)号：US07070485B2

公开(公告)日：2006-07-04

申请号：US09776079

申请日：2001-02-02

申请人： Craig D. Lack ,  Terence M. Thomas ,  Qianqiu Ye

发明人： Craig D. Lack ,  Terence M. Thomas ,  Qianqiu Ye

IPC分类号： B24B1/00 ,  B24B7/19 ,  B24B7/30

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： A polishing composition to remove metal from a dielectric layer by, either single step CMP polishing, or two step CMP polishing, the composition including, an aqueous solution provided with a substance having molecules with respective silanols, and a concentration of ions that solublize the silanols to adsorb on a hydrated surface of the dielectric layer during said polishing.

摘要翻译： 通过单步CMP抛光或两步CMP抛光从介电层除去金属的抛光组合物，所述组合物包括提供有具有各自硅烷醇的分子的物质的水溶液和溶解硅烷醇的离子浓度 以在所述抛光期间吸附在电介质层的水合表面上。

公开(公告)号：US20050194562A1

公开(公告)日：2005-09-08

申请号：US10785666

申请日：2004-02-23

申请人： Raymond Lavoie ,  John Quanci ,  Qianqiu Ye

发明人： Raymond Lavoie ,  John Quanci ,  Qianqiu Ye

IPC分类号： B24B37/00 ,  B24B1/00 ,  B44C1/22 ,  C08J5/14 ,  C09K3/14 ,  H01L21/304

CPC分类号： C09K3/1409 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing composition suitable for polishing semiconductor substrates comprises 0.001 to 2 wt % of a thermoplastic polymer; and 0.001 to 1 wt % of polyvinylpyrrolidone; wherein varying the weight ratio of thermoplastic polymer to the polyvinylpyrrolidone controls the removal rate of the non-ferrous interconnect.

摘要翻译： 适用于研磨半导体衬底的抛光组合物包含0.001至2重量％的热塑性聚合物; 和0.001〜1重量％的聚乙烯吡咯烷酮; 其中改变热塑性聚合物与聚乙烯吡咯烷酮的重量比控制有色互连的去除速率。

公开(公告)号：US06676718B2

公开(公告)日：2004-01-13

申请号：US10005253

申请日：2001-12-04

申请人： Qiuliang Luo ,  Qianqiu Ye ,  Kelly H. Block

发明人： Qiuliang Luo ,  Qianqiu Ye ,  Kelly H. Block

IPC分类号： C09G102

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition further comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silica dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.

摘要翻译： 根据本发明，水性抛光组合物包括研磨颗粒和碱性pH值的水以通过使用抛光垫通过CMP去除阻挡层，水性抛光组合物还包括仅具有多个极性键合位点的极性分子，形成相应的氢 在半导体衬底的水合二氧化硅介电层上与硅烷醇键合基团键合，形成最小化侵蚀的极性分子的亲水性保护膜。

公开(公告)号：US20130045599A1

公开(公告)日：2013-02-21

申请号：US13209864

申请日：2011-08-15

申请人： Qianqiu Ye

发明人： Qianqiu Ye

IPC分类号： H01L21/306 ,  H01L21/304

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/7684

摘要： A method for chemical mechanical polishing of a copper substrate, is provided, comprising: providing a copper substrate; providing slurry composition comprising, as initial components: water; 0.1 to 20 wt % abrasive; 0.01 to 15 wt % complexing agent; 0.02 to 5 wt % inhibitor; 0.01 to 5 wt % phosphorus containing compound; 0.001 to 3 wt % polyvinyl pyrrolidone; >0.1 to 1 wt % histidine; >0.1 to 1 wt % guanidine; optional oxidizing agent; optional leveling agent; optional biocide; and, optional pH adjusting agent; wherein the slurry composition provided has pH of 9 to 11; providing a chemical mechanical polishing pad with a polishing surface; dispensing the slimy composition onto the polishing surface at or near the interface between the polishing surface and the substrate; and, creating dynamic contact at an interface between the polishing surface and the substrate with a down force of 0.69 to 34.5 kPa; wherein the substrate is polished.

摘要翻译： 提供了一种铜基板的化学机械抛光方法，包括：提供铜基板; 提供浆料组合物，其包含作为初始组分的水; 0.1〜20重量％的磨料; 0.01〜15重量％的络合剂; 0.02〜5重量％的抑制剂; 含磷化合物0.01〜5重量％ 0.001〜3重量％聚乙烯吡咯烷酮; > 0.1〜1重量％的组氨酸; > 0.1〜1重量％的胍; 可选氧化剂; 流平剂可选; 可选杀菌剂; 和可选的pH调节剂; 其中所提供的浆料组合物的pH为9至11; 提供具有抛光表面的化学机械抛光垫; 在抛光表面和基底之间的界面处或附近将粘性组合物分配到抛光表面上; 并且以0.69〜34.5kPa的向下力在抛光面和基板之间的界面处产生动态接触; 其中衬底被抛光。

公开(公告)号：US20070051917A1

公开(公告)日：2007-03-08

申请号：US11504508

申请日：2006-08-15

申请人： Terence Thomas ,  Qianqiu Ye

发明人： Terence Thomas ,  Qianqiu Ye

IPC分类号： C09K13/00 ,  C09K13/06

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water; and the aqueous slurry has a pH of at least 8.

摘要翻译： 含水浆料可用于具有铜互连的化学机械抛光半导体衬底。 含水浆料包括重量百分数，0.01至25种氧化剂，0.1至50种磨料颗粒，0.001至3种聚乙烯吡咯烷酮，0.01至10种用于减少铜互连静电蚀刻的抑制剂，0.001至5种含磷化合物，用于提高去除率 的铜互连，在抛光过程中形成0.001至10个络合剂并平衡水; 并且所述含水浆料的pH至少为8。

公开(公告)号：US20060135045A1

公开(公告)日：2006-06-22

申请号：US11015528

申请日：2004-12-17

申请人： Jinru Bian ,  Raymond Lavoie ,  John Quanci ,  Qianqiu Ye

发明人： Jinru Bian ,  Raymond Lavoie ,  John Quanci ,  Qianqiu Ye

IPC分类号： B24B1/00 ,  C09K3/14

CPC分类号： C09G1/02 ,  H01L21/31053 ,  H01L21/3212

摘要： The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing solution comprises 0.001 to 2 wt % of a polyvinylalcohol copolymer, the polyvinylalcohol copolymer having a first component, a second component and a weight average molecular weight of 1,000 to 1,000,000 grams/mole, and the first component being 50 to 95 mole percent vinyl alcohol and the second component being more hydrophobic than the vinyl alcohol and 0.05 to 50 wt % silica abrasive particles; and the composition having a pH of 8 to 12.

摘要翻译： 水性抛光组合物可用于研磨半导体衬底。 抛光液含有0.001〜2重量％的聚乙烯醇共聚物，该聚乙烯醇共聚物具有第一成分，第二成分，重均分子量为1,000〜1,000,000克/摩尔，第一成分为50〜95摩尔％乙烯基 醇和第二组分比乙烯醇更憎水和0.05至50重量％的二氧化硅磨料颗粒; 该组合物的pH为8〜12。

公开(公告)号：US20090032765A1

公开(公告)日：2009-02-05

申请号：US11890108

申请日：2007-08-03

申请人： Jinru Bian ,  Qianqiu Ye

发明人： Jinru Bian ,  Qianqiu Ye

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 30 abrasive particles, 0.001 to 5 benzenecarboxylic acid, 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0 to 10 complexing agent formed during polishing and balance water.

摘要翻译： 含水浆料可用于化学机械抛光具有铜互连的半导体衬底。 浆料含有重量百分数，0-25氧化剂，0.1-30磨料颗粒，0.001至5苯甲酸，0.00002至5多组分表面活性剂，多组分表面活性剂具有疏水尾，非离子亲水部分和阴离子 亲水部分，具有6至30个碳原子的疏水尾部和具有10至300个碳原子的非离子亲水部分，0.001至10个用于减少铜互连的静态蚀刻的抑制剂，0至5个含磷化合物，用于提高 铜互连，在抛光过程中形成0至10个络合剂并平衡水。