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    METHOD OF MANUFACTURING NANO SCALE SEMICONDUCTOR DEVICE USING NANO PARTICLES
    1.
    发明申请
    METHOD OF MANUFACTURING NANO SCALE SEMICONDUCTOR DEVICE USING NANO PARTICLES 有权
    使用纳米颗粒制造纳米尺度半导体器件的方法

    公开(公告)号：US20070054445A1

    公开(公告)日：2007-03-08

    申请号：US11240473

    申请日：2005-10-03

    申请人： Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-lyong Choi

    发明人： Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-lyong Choi

    IPC分类号： H01L21/338 ,  H01L21/461

    CPC分类号： H01L21/8238 ,  H01L21/3212 ,  H01L33/08 ,  H01L33/24 ,  Y10S977/755 ,  Y10S977/758 ,  Y10S977/773

    摘要： Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.

    摘要翻译： 提供了一种使用纳米级P-N结器件或使用纳米颗粒的CMOS而不使用掩模或精细图案的纳米级半导体器件的制造方法。 该方法包括在半导体衬底上均匀分散多个纳米颗粒，形成覆盖半导体衬底上的纳米颗粒的绝缘层，部分去除纳米颗粒和绝缘层的上表面，从绝缘体中选择性地除去纳米颗粒 层，并且通过部分地通过去除纳米颗粒形成的空间将半导体衬底部分地掺杂在半导体衬底中部分地形成掺杂半导体层。

    Method of manufacturing nano scale semiconductor device using nano particles
    2.
    发明授权
    Method of manufacturing nano scale semiconductor device using nano particles 有权
    使用纳米颗粒制造纳米级半导体器件的方法

    公开(公告)号：US07192873B1

    公开(公告)日：2007-03-20

    申请号：US11240473

    申请日：2005-10-03

    申请人： Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-Iyong Choi

    发明人： Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-Iyong Choi

    IPC分类号： H01L21/311

    CPC分类号： H01L21/8238 ,  H01L21/3212 ,  H01L33/08 ,  H01L33/24 ,  Y10S977/755 ,  Y10S977/758 ,  Y10S977/773

    摘要： Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.

    摘要翻译： 提供了一种使用纳米级P-N结器件或使用纳米颗粒的CMOS而不使用掩模或精细图案的纳米级半导体器件的制造方法。 该方法包括在半导体衬底上均匀分散多个纳米颗粒，形成覆盖半导体衬底上的纳米颗粒的绝缘层，部分去除纳米颗粒和绝缘层的上表面，从绝缘体中选择性地除去纳米颗粒 层，并且通过部分地通过去除纳米颗粒形成的空间将半导体衬底部分地掺杂在半导体衬底中部分地形成掺杂半导体层。

    Mask for electromagnetic radiation and method of fabricating the same
    4.
    发明申请
    Mask for electromagnetic radiation and method of fabricating the same 审中-公开
    电磁辐射掩模及其制造方法

    公开(公告)号：US20060134531A1

    公开(公告)日：2006-06-22

    申请号：US11274474

    申请日：2005-11-16

    申请人： I-Hun Song ,  Won-Il Ryu ,  Suk-Pil Kim ,  Hoon Kim ,  Seung-Hyuk Chang ,  Won-Joo Kim ,  Young-Soo Park

    发明人： I-Hun Song ,  Won-Il Ryu ,  Suk-Pil Kim ,  Hoon Kim ,  Seung-Hyuk Chang ,  Won-Joo Kim ,  Young-Soo Park

    IPC分类号： G03C5/00 ,  G21K5/00 ,  G03F1/00

    CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

    摘要： A mask for lithography and a method of manufacturing the same. The mask may include a substrate, a reflection layer formed of a material capable of reflecting electromagnetic rays on the substrate and an absorption pattern formed in a desired pattern such that absorbing regions with respect to electromagnetic rays and windows through which electromagnetic rays pass are formed, wherein the absorption pattern includes at least one side surface that is adjacent to the window and is inclined with respect to the reflection layer. The method may include forming a reflection layer which is formed of a material capable of reflecting electromagnetic rays on a substrate, forming an absorption layer which is formed of a material capable of absorbing electromagnetic rays on the refection layer, and patterning the absorption layer to form an absorption pattern with at least one side surface adjacent to a window that has an inclined side surface with respect to the reflection layer.

    摘要翻译： 光刻用掩模及其制造方法。 掩模可以包括基板，由能够在基板上反射电磁射线的材料形成的反射层和形成为期望图案的吸收图案，使得形成相对于电磁射线通过的电磁射线和窗口的吸收区域， 其中所述吸收图案包括与所述窗口相邻并且相对于所述反射层倾斜的至少一个侧表面。 该方法可以包括形成由能够在基板上反射电磁射线的材料形成的反射层，形成由能够在反射层上吸收电磁射线的材料形成的吸收层，以及图案化吸收层以形成 具有与窗口相邻的至少一个侧表面的吸收图案，该窗口具有相对于反射层的倾斜侧表面。

    Photomask and method thereof
    8.
    发明申请
    Photomask and method thereof 审中-公开
    光掩模及其方法

    公开(公告)号：US20060257753A1

    公开(公告)日：2006-11-16

    申请号：US11356258

    申请日：2006-02-17

    申请人： Won-joo Kim ,  I-hun Song ,  Suk-pil Kim ,  Seung-hyuk Chang ,  Won-Il Ryu ,  Hoon Kim

    发明人： Won-joo Kim ,  I-hun Song ,  Suk-pil Kim ,  Seung-hyuk Chang ,  Won-Il Ryu ,  Hoon Kim

    IPC分类号： G03C5/00 ,  G21K5/00 ,  G03F1/00

    CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G21K2201/067

    摘要： A photomask and method thereof. In an example method, a photomask may be manufactured by forming an oxide layer on a surface, patterning the oxide layer to form an oxide pattern, the oxide pattern including a plurality of oxide pattern bodies and a plurality of oxide windows, filling the plurality of oxide windows with an absorbent to form an absorbent pattern and reducing the plurality of oxide pattern bodies. An example photomask may include an oxide pattern-based absorbent pattern including a plurality of absorbent pattern bodies and a plurality of absorbent pattern windows.

    摘要翻译： 光掩模及其方法。 在一个示例性方法中，可以通过在表面上形成氧化物层来形成光掩模，图案化氧化物层以形成氧化物图案，氧化物图案包括多个氧化物图案体和多个氧化物窗口， 具有吸收剂的氧化物窗口以形成吸收图案并且还原多个氧化物图案体。 示例性光掩模可以包括基于氧化物图案的吸收图案，其包括多个吸收图案体和多个吸收图案窗。

    Unit pixel of image sensor and light-receiving element thereof
    10.
    发明授权
    Unit pixel of image sensor and light-receiving element thereof 有权

    公开(公告)号：US11563135B2

    公开(公告)日：2023-01-24

    申请号：US17093624

    申请日：2020-11-09

    申请人： Hoon Kim

    发明人： Hoon Kim

    IPC分类号： H01L27/14 ,  H01L31/113 ,  H01L31/0232 ,  H01L31/036 ,  H01L27/146

    摘要： Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.