Dividing wall column for fractionation of a multicomponent mixture
    4.
    发明申请
    Dividing wall column for fractionation of a multicomponent mixture 有权
    分隔壁柱用于多组分混合物的分馏

    公开(公告)号:US20110139604A1

    公开(公告)日:2011-06-16

    申请号:US09782305

    申请日:2001-02-14

    IPC分类号: B01D3/16

    摘要: A dividing wall column comprises the following segments:a) an upper column region (1),b) an enrichment section (2) of the feed section,c) a stripping section (4) of the feed section,d) an upper part (3) of the offtake section,e) a lower part (5) of the offtake section,f) an intermediate region (9) of the feed section,g) an intermediate region (10) of the offtake section andh) a lower column region (6).For the purposes of the present invention, it is essential that the dividing wall (7) is located vertically between the segments b) (2) and d) (3) and between the segments c) (4) and e) (5), the segments b) (2), d) (3), c) (4) and e) (5) have separation-active internals and the cross-sectional area Ab of the segment b) (2) is at least 10% smaller than the cross-sectional area Ad of segment d) (3), and the cross-sectional area Ac of the segment c) (4) is at least 10% greater than the cross-sectional area Ae of segment e) (5).

    摘要翻译: 分隔壁柱包括以下部分:a)上部柱区域(1),b)进料部分的富集部分(2),c)进料部分的汽提部分(4),d)上部部分 (3),e)出料部分的下部(5),f)进料部分的中间区域(9),g)出料部分的中间区域(10)和h)a 下列区域(6)。 为了本发明的目的,重要的是分隔壁(7)垂直位于段b)(2)和d)(3)之间以及段c)(4)和e)(5)之间。 ,分段b)(2),d)(3),c)(4)和e)(5)具有分离活性的内部,并且段b)(2)的横截面积Ab至少为10 (3)段的横截面面积Ad的百分比小于段c)(4)的横截面积Ac比段e)的横截面积Ae至少大10%( 5)。

    Dividing wall column for fractionation of a multicomponent mixture
    5.
    发明授权
    Dividing wall column for fractionation of a multicomponent mixture 有权
    分隔壁柱用于多组分混合物的分馏

    公开(公告)号:US08092655B2

    公开(公告)日:2012-01-10

    申请号:US09782305

    申请日:2001-02-14

    IPC分类号: B01D1/14 B01D3/42 C07C67/54

    摘要: A dividing wall column is described which includes the following segments:a) an upper column region (1),b) an enrichment section (2) of the feed section,c) a stripping section (4) of the feed section,d) an upper part (3) of the offtake section,e) a lower part (5) of the offtake section,f) an intermediate region (9) of the feed section,g) an intermediate region (10) of the offtake section andh) a lower column region (6).The dividing wall column has a dividing wall (7) is located vertically between the segments b) (2) and d) (3) and between the segments c) (4) and e) (5). The segments b) (2), d) (3), c) (4) and e) (5) have separation-active internals, Segment b (2) has a cross-sectional area Ab which is at least 10% smaller than the cross-sectional area Ad of segment d) (3), and segment c) has a cross-sectional area Ac which is at least 10% greater than the cross-sectional area Ae of segment e) (5).

    摘要翻译: 描述了分隔壁柱,其包括以下部分:a)上部柱区域(1),b)进料部分的富集部分(2),c)进料部分的汽提部分(4),d) 所述出料部分的上部(3),e)所述出料部分的下部(5),f)所述进料部分的中间区域(9),g)所述出料部分的中间区域(10)和 h)较低的列区域(6)。 分隔壁柱具有位于段b)(2)和d)(3)之间以及段c)(4)和e)(5)之间的分隔壁(7)。 段b)(2),d)(3),c)(4)和e)(5)具有分离活性内部,段b(2)的横截面积Ab至少减小10% 比段d)(3)的截面面积Ad大,截面积Ac的截面面积Ac比段e)(5)的横截面面积Ae至少大10%。

    Use of Metal Complexes as Emitter in an Organic Light-Emitting Component and such a Component
    7.
    发明申请
    Use of Metal Complexes as Emitter in an Organic Light-Emitting Component and such a Component 有权
    在有机发光组件和这种组分中使用金属络合物作为发射体

    公开(公告)号:US20090318698A1

    公开(公告)日:2009-12-24

    申请号:US12159520

    申请日:2006-01-24

    IPC分类号: C07F15/00

    摘要: A HEMT device including a GaN channel structure including a very thin (Al, In, Ga)N subchannel layer (14) that is disposed between a first GaN channel layer (12) and a second GaN channel layer (16), to effect band bending induced from the piezoelectric and spontaneous charges associated with the (Al, In, Ga)N subchannel layer. This GaN channel/(Al, In, Ga)N subchannel arrangement effectively disperses the 2DEG throughout the channel of the device, thereby rendering the device more linear in character (relative to a corresponding device lacking the subchannel (Al5In3Ga)N sub-layer), without substantial loss of electron mobility.

    摘要翻译: 包括设置在第一GaN沟道层(12)和第二GaN沟道层(16)之间的非常薄(Al,In,Ga)N子沟道层(14)的GaN沟道结构的HEMT器件,以实现带 由与(Al,In,Ga)N子通道层相关联的压电和自发电荷引起的弯曲。 该GaN沟道/(Al,In,Ga)N子通道布置有效地将2DEG分散在器件的整个通道中,从而使器件的性质更加线性(相对于缺少子沟道(Al5In3Ga)N子层的相应器件) ,没有电子迁移率的实质损失。

    Di(het)arylaminothiophene derivatives
    8.
    发明授权
    Di(het)arylaminothiophene derivatives 有权
    二(乙基)芳基氨基噻吩衍生物

    公开(公告)号:US06984737B2

    公开(公告)日:2006-01-10

    申请号:US10181744

    申请日:2001-01-19

    IPC分类号: C07D333/36 C07D409/00

    CPC分类号: C07D495/04 C07D333/36

    摘要: The invention relates to novel 2-(N,N-di(het)arylamino)-thiophene derivatives of formula (I), wherein R1, R2, R3, R4 and R5 are, independently each of other, each a monofunctional (het)aryl system and wherein R1 can also be a bifunctional (het)arylene system, R3 can also be a group R8, except when R1 is a bifunctional (het)arylene system, R8 representing chemical bond or a bifunctional (het)arylene system, R4 can also mean R10, R10 representing a chemical bond or a bifunctional (het)arylene system, or R4 can be one of the following groups (II) and (III), R9 representing a chemical bond or a bifunctional (het)arylene system and R5 can also be H or (IV).

    摘要翻译: 本发明涉及式(I)的新型2-(N,N-二(乙基)芳基氨基) - 噻吩衍生物,其中R 1,R 2,R 2, 其中R 4,R 4和R 5各自独立地为单官能(het)芳基系统,其中R 1, / SUP>也可以是双官能(het)亚芳基体系,R 3也可以是基团R 8,除非R 1是 表示化学键的双官能(het)亚芳基系统,R 8,或者双官能(het)亚芳基体系,R 4还可以指R 10, 表示化学键或双官能(het)亚芳基体系的R 10可以是以下基团(II)和(III)中的一种,R 1, 表示化学键或双官能(het)亚芳基体系的SUP> 9,R 5也可以是H或(IV)。